MG400Q2YS70A [TOSHIBA]
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2KV V(BR)CES,400A I(C);
| 型号： | MG400Q2YS70A |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2KV V(BR)CES,400A I(C) 栅 双极性晶体管 |
| 文件： | 总15页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MG400Q2YS70A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q2YS70A
High Power Switching Applications
Motor Control Applications
•
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
The electrodes are isolated from case.
Low thermal resistance.
•
•
•
V
= 2.3 V (typ.)
CE (sat)
Equivalent Circuit
Ｃ1
5
6
7
F
F
O
E1/C2
4
1
OT
2
3
O
E2
Signal terminal
1. G (L)
2.
6.
F
F
(L)
3. E (L)
7. E (H)
4.
V
D
O
O
5. G (H)
(H)
8. Open
1
2003-09-19
MG400Q2YS70A
Package Dimensions: 2-123C1B
1. G (L)
5. G (H)
2.
6.
F
F
(L)
3. E (L)
7. E (H)
4.
V
D
O
O
(H)
8. Open
Signal Terminal Layout
1. G (L)
2. (L)
3. E (L)
4.
5. G (H)
6. (H)
F
O
7
5
8
6
V
D
F
O
3
1
4
2
7. E (H)
8. Open
2.54
Weight: 375 g
2
2003-09-19
MG400Q2YS70A
Maximum Ratings (Ta = 25°C)
Stage
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
1200
V
V
CES
±20
GES
DC
1 ms
DC
I
400
C
Collector current
Forward current
A
A
Inverter
I
800
400
CP
I
F
1 ms
I
800
FM
Collector power dissipation (Tc = 25°C)
Control voltage (OT)
P
V
3750
W
V
C
D
20
Control
Module
Fault input voltage
VF
20
V
O
Fault input current
IF
20
mA
°C
°C
°C
V
O
Junction temperature
Storage temperature range
Operation temperature range
Isolation voltage
T
150
j
T
−40~125
−20~100
2500 (AC 1 min)
3 (M5)
stg
T
ope
V
isol
Screw torque
N･m
Electrical Characteristics (T = 25°C)
j
1. Inverter stage
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
V
= ±20 V, V
= +10 V, V
= 0
= 0
+3/−4
100
1.0
mA
nA
mA
V
GE
GE
CE
CE
CE
CE
Gate leakage current
I
GES
Collector cut-off current
I
= 1200 V, V
= 0
CES
GE
Gate-emitter cut-off voltage
V
= 5 V, I = 400 mA
6.0
7.0
2.3
8.0
GE (off)
C
T = 25°C
j
2.7
V
= 15 V,
GE
Collector-emitter saturation voltage
V
V
CE (sat)
I
= 400 A
C
T = 125°C
j
3.0
Input capacitance
Turn-on delay time
C
V
= 10 V, V = 0, f = 1 MHz
GE
30000
pF
ies
CE
t
0.10
1.00
2.00
0.50
0.50
2.8
d (on)
V
V
= 600 V, I = 400 A
C
CC
GE
Switching time
Turn-off time
Fall time
t
off
= ±15 V, R = 5.1 Ω
G
µs
(Note 1)
t
f
(See page 4)
Reverse recovery time
Forward voltage
t
rr
V
I
= 400 A
2.4
V
F
F
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25°C)
Characteristics
Fault output current
Symbol
Test Condition
Min
Typ.
Max
Unit
OC
OT
V
V
= 15 V
800
100
125
8
A
GE
CC
Over temperature
°C
µs
Fault output delay time
t
= 600 V, V
= ±15 V
GE
d (Fo)
3
2003-09-19
MG400Q2YS70A
3. Module (Tc = 25°C)
Characteristics
Symbol
Test Condition
Inverter IGBT stage
Min
Typ.
Max
Unit
0.033
0.068
Junction to case thermal resistance
Case to fin thermal resistance
R
R
°C/W
°C/W
th (j-c)
Inverter FRD stage
With silicon compound
0.013
th (c-f)
Switching Time Test Circuit
R
G
I
F
−V
GE
V
CC
L
I
C
R
G
Timing Chart
90%
V
GE
10%
90% I
rr
I
rr
20% I
rr
90%
I
C
t
rr
10%
10%
t
t
d (off)
d (on)
t
f
4
2003-09-19
MG400Q2YS70A
Remark
<Short circuit capability condition >
ꢀ
Short circuit capability is 6 µs after fault output signal.
Please keep following condition to use fault output signal.
<
•
•
•
•
V
750 V
CC
<
<
14.8 V
V
GE
17.0 V
>
R
G
5.1 Ω
125°C
<
T
j
<Gate voltage >
ꢀ
To use this product, V
must be provided higher than 14.8 V
GE
In case V
is less than 14.8 V, fault signal F may not be output even under error conditions.
O
GE
<For parallel use>
ꢀ
For parallel use of this product, please use the same rank for both V
and VF among IGBT in
CE (sat)
parallel without fail.
V
Min
Max
CE (sat)
24
26
28
2.1
2.3
2.5
2.4
2.6
2.7
V
Min
Max
F
E
2.1
2.3
2.5
2.4
2.6
2.8
F
G
5
2003-09-19
MG400Q2YS70A
I
– V
CE
C
800
600
400
200
0
Common emitter
T = 25°C
V
= 20 V
15 V
12 V
GE
j
10 V
9 V
8 V
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
CE
I
– V
C
CE
800
600
400
200
0
Common emitter
T = 125°C
j
15 V
V
= 20 V
GE
12 V
10 V
9 V
8 V
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
CE
6
2003-09-19
MG400Q2YS70A
V
CE
– V
GE
10
8
Common emitter
T = 25°C
j
6
800 A
4
400 A
2
I
= 200 A
C
0
0
4
8
12
16
20
Gate-emitter voltage
V
(V)
GE
V
CE
– V
GE
10
8
Common emitter
T = 125°C
j
6
800 A
4
400 A
2
I
= 200 A
C
0
0
4
8
12
16
20
Gate-emitter voltage
V
(V)
GE
7
2003-09-19
MG400Q2YS70A
I
– V
GE
C
800
600
400
200
0
Common emitter
= 5 V
V
CE
−40°C
125°C
T = 25°C
j
0
4
8
12
Gate-emitter voltage
V
(V)
GE
I – V
F
F
800
600
400
200
0
Common cathode
= 0 V
V
GE
T = 125°C
j
25°C
−40°C
0
1
2
3
4
5
Forward voltage
V
(V)
F
8
2003-09-19
MG400Q2YS70A
Switching time – R
G
10000
Common emitter
V
= 600 V
CC
C
5000
3000
I
= 400 A
T = 25°C
j
T = 125°C
j
V
= ± 15 V
GE
t
1000
t
t
on
500
300
t
t
t
100
50
30
10
0
5
10
Gate resistance
15
20
R
G
(Ω)
Switching time – I
C
10000
Common emitter
V
= 600 V
= 5.1 Ω
CC
5000
3000
R
GE
T = 25°C
j
T = 125°C
j
G
V
= ± 15 V
t
1000
t
500
300
t
on
t
t
100
50
30
t
10
0
100
200
300
400
Collector current
I
(A)
C
9
2003-09-19
MG400Q2YS70A
E
, E – R
G
on off
1000
Common emitter
V
= 600 V
CC
C
I
= 400 A
T = 25°C
j
T = 125°C
j
500
300
V
= ± 15 V
GE
E
E
on
100
50
30
10
0
5
10
Gate resistance
15
20
R
G
(Ω)
E
, E – I
C
on off
100
Common emitter
V
= 600 V
= 5.1 Ω
CC
R
T = 25°C
j
T = 125°C
G
50
30
V
= ± 15 V
GE
j
E
on
E
10
5
3
1
0
100
200
300
400
Collector current
I
(A)
C
10
2003-09-19
MG400Q2YS70A
I , t – I
rr rr
F
1000
Common emitter
V
= 600 V
= 5.1 Ω
CC
R
T = 25°C
j
T = 125°C
j
G
500
300
V
= ± 15 V
GE
I
t
100
50
30
10
0
100
200
Forward current
300
400
I
(A)
F
E
– I
F
dsw
100
Common emitter
V
= 600 V
= 5.1 Ω
CC
R
T = 25°C
j
T = 125°C
G
50
30
V
= ± 15 V
GE
j
10
5
3
1
0
100
200
300
400
Forward current
I
(A)
F
11
2003-09-19
MG400Q2YS70A
V
, V
– Q
CE GE G
1000
800
600
400
200
0
20
16
12
8
Common emitter
= 1.5 Ω
R
L
T = 25°C
j
400 V
600 V
200 V
V
= 0 V
CC
4
0
0
900
1800
2700
3600
Charge
Q
G
(nC)
C – V
CE
100000
50000
30000
C
ies
10000
5000
3000
C
oes
C
res
1000
Common emitter
V
= 0 V
GE
f = 1 MHz
T = 25°C
500
300
j
0.1
0.3 0.5
1
3
5
10
(V)
30
50
100
Collector-emitter voltage
V
CE
12
2003-09-19
MG400Q2YS70A
Safe-operating area
3000
1000
I
max (pulsed)*
C
50 µs∗
500
300
I
max
C
(continuous)
100 µs∗
1 ms∗
100
50
30
10
*:Single
nonrepetitive pulse
Tc = 25°C
5
3
Curves must be
derated linearly with
increase in
temperature.
1
1
10
100
Collector-emitter voltage
1000
10000
V
(V)
CE
Reverse bias SOA
800
600
400
200
0
Common emitter
= 5.1 Ω
R
G
T = 25°C
j
0
400
800
1200
Collector-emitter voltage
V
(V)
CE
13
2003-09-19
MG400Q2YS70A
R
th
– t
w
1
0.5
0.3
0.1
Diode stage
0.05
0.03
Transistor stage
0.01
0.005
0.003
0.001
0.0005
0.001
0.01
0.1
Pulse width
1
10
t
(s)
w
14
2003-09-19
MG400Q2YS70A
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
15
2003-09-19
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