MP4303_07 [TOSHIBA]

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching; 高功率开关应用锤驱动器,脉冲马达驱动器和感性负载开关
MP4303_07
型号: MP4303_07
厂家: TOSHIBA    TOSHIBA
描述:

High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
高功率开关应用锤驱动器,脉冲马达驱动器和感性负载开关

驱动器 开关 脉冲
文件: 总6页 (文件大小:156K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MP4303  
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type  
(Four Darlington Power Transistors in One)  
MP4303  
Industrial Applications  
Unit: mm  
High Power Switching Applications  
Hammer Drive, Pulse Motor Drive and Inductive Load  
Switching  
Small package by full molding (SIP 12 pins)  
High collector power dissipation (4-device operation)  
: P = 4.4 W (Ta = 25°C)  
T
High collector current: I  
= 2 A (max)  
C (DC)  
High DC current gain: h  
= 2000 (min) (V  
= 2 V, I = 1 A)  
CE C  
FE  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
120  
100  
6
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
DC  
I
2
JEDEC  
JEITA  
C
Collector current  
A
A
Pulse  
I
4
CP  
Continuous base current  
I
0.5  
B
TOSHIBA  
2-32C1B  
Collector power dissipation  
(1 -evice operation)  
P
2.2  
4.4  
W
Weight: 3.9 g (typ.)  
C
Collector power dissipation  
(4-device operation)  
P
W
T
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Array Configuration  
2
3
4
9
10  
11  
5
8
12  
1
6
7
R1 R2  
R1 4.5 kΩ  
R2 300 Ω  
1
2006-10-27  
MP4303  
Marking  
Part No. (or abbreviation code)  
Lot No.  
MP4303  
JAPAN  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
28.4  
Unit  
Thermal resistance from junction to  
ambient  
ΣR  
th (j-a)  
°C/W  
(4-device operation, Ta = 25°C)  
Maximum lead temperature for  
soldering purposes  
T
L
260  
°C  
(3.2 mm from case for 10 s)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 120 V, I = 0 A  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
V
10  
10  
μA  
μA  
mA  
V
CBO  
CEO  
CB  
CE  
EB  
E
Collector cut-off current  
= 100 V, I = 0 A  
B
Emitter cut-off current  
I
= 6 V, I = 0 A  
0.5  
120  
100  
2000  
1000  
2.5  
EBO  
C
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
V
V
I
I
= 1 mA, I = 0 A  
(BR) CBO  
(BR) CEO  
C
C
E
= 10 mA, I = 0 A  
V
B
h
h
V
V
= 2 V, I = 1 A  
15000  
FE (1)  
FE (2)  
CE  
CE  
C
DC current gain  
= 2 V, I = 2 A  
C
Collector-emitter  
Saturation voltage  
V
I
I
= 1 A, I = 1 mA  
1.5  
2.0  
CE (sat)  
BE (sat)  
C
C
B
V
Base-emitter  
V
= 1 A, I = 1 mA  
B
Transition frequency  
f
V
V
= 2 V, I = 0.5 A  
100  
20  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 10 V, I = 0 A, f = 1 MHz  
ob  
E
Turn-on time  
t
0.4  
4.0  
0.6  
on  
Output  
I
I
B1  
B2  
Input  
20 μs  
Storage time  
Fall time  
t
stg  
Switching time  
μs  
V
= 30 V  
CC  
t
f
I
= I = 1 mA, duty cycle 1%  
B1  
B2  
2
2006-10-27  
MP4303  
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Maximum forward current  
Surge current  
I
1.0  
5
2
4
A
A
FM  
I
t = 1 s, 1 shot  
= 0.5 A, I = 0 A  
FSM  
Forward voltage  
V
I
2.0  
V
F
F
B
Reverse recovery time  
Reverse recovery charge  
t
μs  
μC  
rr  
I
= 2 A, V = 3 V, dI /dt = 50 A/μs  
BE  
F
F
Q
rr  
Flyback-Diode Rating and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Maximum forward current  
Reverse current  
I
2
A
μA  
V
FM  
I
V
= 120 V  
R
0.4  
R
Reverse voltage  
V
I
I
= 100 μA  
120  
R
R
F
Forward voltage  
V
= 0.5 A  
1.8  
V
F
3
2006-10-27  
MP4303  
I
– V  
I
– V  
BE  
C
CE  
C
4
3
2
1
0
4
3
2
1
0
2
4
Common emitter  
Common emitter  
Ta = 25°C  
1
V
= 2 V  
CE  
0.5  
0.4  
0.3  
0.2  
Ta = 100°C  
25  
I
= 0.15 mA  
B
55  
0
4
0
2
6
8
10  
0
1
2
3
4
5
Collector-emitter voltage  
V
(V)  
Base-emitter voltage  
V
(V)  
CE  
BE  
h
– I  
V
– I  
B
FE  
C
CE  
10000  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
Common emitter  
Ta = 25°C  
Common emitter  
5000  
3000  
V
= 2 V  
CE  
Tc = 100°C  
25  
1000  
55  
I
= 4 A  
C
3
500  
300  
2
1.5  
1
0.1  
100  
0.03  
0.5  
1
0.1  
0.3  
1
3
10  
Collector current  
I
(A)  
0.1  
0.3  
3
10  
30  
100  
300 500  
C
Base current  
I
B
(mA)  
V
– I  
V
– I  
C
CE (sat)  
C
BE (sat)  
10  
10  
Common emitter  
/I = 500  
Common emitter  
I /I = 500  
C
I
C
B
B
5
3
5
3
Ta = 55°C  
25  
Ta = 55°C  
100  
1
1
25  
100  
0.5  
0.1  
0.5  
0.1  
0.3  
0.5  
1
3
5
0.3  
0.5  
1
3
5
Collector current  
I
C
(A)  
Collector current  
I
C
(A)  
4
2006-10-27  
MP4303  
r
th  
– t  
w
300  
100  
Curves should be applied in thermal  
limited area. (Single nonrepetitive pulse)  
The figure shows thermal resistance per  
device versus pulse width.  
(4)  
30  
10  
(3)  
(2)  
(1)  
-No heat sink/Attached on a circuit board-  
(1) 1-device operation  
(2) 2-device operation  
3
1
(3) 3-device operation  
(4) 4-device operation  
Circuit board  
100  
0.001  
0.01  
0.1  
1
10  
1000  
Pulse width  
t
(s)  
w
Safe Operating Area  
P – Ta  
T
10  
8
10  
Attached on a circuit board  
(1) 1-device operation  
(2) 2-device operation  
(3) 3-device operation  
(4) 4-device operation  
5
3
I
max (pulsed)*  
C
10 ms*  
1 ms*  
100 μs*  
6
1
(4)  
Circuit board  
0.5  
0.3  
4
(3)  
(2)  
(1)  
2
0.1  
0
0
0.05  
0.03  
40  
80  
120  
160  
200  
*: Single nonrepetitive pulse  
Ta = 25°C  
Ambient temperature Ta (°C)  
Curves must be derated linearly  
with increase in temperature.  
V
max  
CEO  
0.01  
1
3
5
10  
30 50  
100  
300  
Collector-emitter voltage  
V
(V)  
CE  
ΔT – P  
j
T
200  
160  
120  
80  
Circuit board  
(4)  
(2)  
(3)  
(1)  
Attached on a circuit board  
(1) 1-device operation  
40  
(2) 2-device operation  
(3) 3-device operation  
(4) 4-device operation  
0
0
1
2
3
4
5
Total power dissipation  
P
T
(W)  
5
2006-10-27  
MP4303  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-10-27  

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