MT4S102T [TOSHIBA]
UHF-SHF Low Noise Amplifier Application; UHF- SHF低噪声放大器的应用
| 型号： | MT4S102T |
| 厂家： | 
TOSHIBA |
| 描述： | UHF-SHF Low Noise Amplifier Application |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT4S102T
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S102T
UHF-SHF Low Noise Amplifier Application
Unit:mm
1.2±0.05
FEATURES
0.9±0.05
•
•
Low Noise Figure :NF=0.58dB (@f=2GHz)
High Gain:|S21e|2=16.0dB (@f=2GHz)
Marking
4
3
2
P 8
1. Collector
2. Emitter
3. Base
1
4. Emitter
Absolute Maximum Ratings (Ta = 25°C)
TESQ
JEDEC
Characteristics
Collector-Base voltage
Symbol
Rating
Unit
-
-
JEITA
V
CBO
V
CEO
V
EBO
6
3
V
V
TOSHIBA
2-1G1B
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Weight: 0.0015 g
1.2
V
I
20
mA
mA
mW
°C
°C
C
Base-Current
I
10
B
Collector Power dissipation
Junction temperature
Storage temperature Range
P
60
C
T
150
−55~150
j
T
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2007-11-01
MT4S102T
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Symbol
Test Condition
Min
Typ.
Max
Unit
f
V
V
V
V
V
=2V, I =15mA, f=2GHz
C
21
13.5
⎯
25
16.0
9.0
⎯
⎯
GHz
dB
T
CE
CE
CE
CE
CE
|S21e|2(1)
|S21e|2(2)
NF(1)
=2V, I =15mA, f=2GHz
C
Insertion Gain
Noise Figure
=2V, I =15mA, f=5.2GHz
C
⎯
dB
=2V, I =10mA, f=2GHz
⎯
0.58
1.4
0.85
⎯
dB
C
NF(2)
=2V, I =10mA, f=5.2GHz
C
⎯
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector Cut-off Current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
CB
V
EB
V
CE
V
CB
V
CB
=6V, I =0
⎯
⎯
⎯
⎯
1
1
µA
µA
-
CBO
E
Emitter Cut-off Current
DC Current Gain
I
=1V, I =0
C
EBO
hFE
=2V, I =15mA
200
⎯
⎯
400
0.6
0.25
C
Output Capacitance
C
=2V, I =0, f=1MHz
0.43
0.17
pF
pF
ob
E
Reverse Transfer Capacitance
C
=2V, I =0, f=1MHz (Note 1)
⎯
re
E
Note 1: Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
2
2007-11-01
MT4S102T
I -V
C
h -I
FE C
CE
25
20
15
10
5
1000
100
10
COMMON EMITTER
Ta=25
℃
IB=70µA
60µA
50µA
40µA
30µA
20µA
COMMON EMITTER
VCE=2V
10µA
4µA
Ta=25
℃
0
0.0
1.0
2.0
3.0
4.0
0.1
1
10
100
Collector-Emitter voltage V (V)
CE
Collector-current I (mA)
C
I -V
|S
|2-I
21e C
C
BE
25
20
15
10
5
100
10
VCE=2V
1V
COMMON EMITTER
VCE=2V
Ta=25
℃
1
0.1
0.01
0.001
f=1GHz
Ta=25
℃
0
1
0.0
0.2
0.4
0.6
0.8
1.0
10
100
Base-Emitter voltage V (V)
Collector-current I (mA)
C
BE
|S
|2-I
f -I
T C
21e
C
20
15
10
5
35
30
25
20
15
10
5
VCE=2V
1V
VCE=2V
1V
f=2GHz
Ta=25
f=2GHz
Ta=25
℃
℃
0
1
0
1
10
Collector-current I (mA)
100
10
Collector-current I (mA)
100
C
C
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2007-11-01
MT4S102T
C ,C -V
re ob CB
NF,Ga-I
C
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
18
16
14
12
10
8
IE=0
f=1MHz
Ta=25
Ga
NF
℃
Cob
Cre
6
4
2
VCE=2V
f=2GHz
Ta=25
℃
1
10
Collector-current I (mA)
100
0.1
1
10
Collector-Base voltage V (V)
CB
C
P -T
C
a
100
75
60
50
25
0
0
25 50 75 100 125 150 175
Ambient temperature T (℃)
a
4
2007-11-01
MT4S102T
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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