MT6L57AFS [TOSHIBA]
VHF~UHF Band Low-Noise Amplifier Applications; VHF 〜 UHF波段低噪声放大器的应用
| 型号： | MT6L57AFS |
| 厂家： | 
TOSHIBA |
| 描述： | VHF~UHF Band Low-Noise Amplifier Applications |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT6L57AFS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L57AFS
Unit: mm
VHF~UHF Band Low-Noise Amplifier Applications
1.0±0.05
0.8±0.05
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
0.1±0.05
0.1±0.05
z Superior noise characteristics
z Superior performance in buffer and oscillator applications.
1
6
5
2
Mounted Devices
4
3
Q1
Q2
Corresponding three-pin products:
TESM(fSM) mold products
MT3S06T
(MT3S06FS)
MT3S04AT
(MT3S04AFS)
fS6
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
6. Base1 (B1)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
Unit
Q1
10
Q2
10
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
V
V
V
V
V
CBO
CEO
EBO
JEDEC
―
―
5
1.5
15
7
5
2
JEIAJ
V
Toshiba
2-1F1A
I
C
40
10
mA
mA
Weight: 0.001g (typ.)
Base current
I
B
100
Collector power dissipation
P (Note 1)
C
mW
110 (Note 2)
125
Junction temperature
T
°C
°C
j
Storage temperature range
T
−55~125
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation
Marking (top view)
Pin Assignment (top view)
6
5
4
6
5
4
14
Q1
1
Q2
3
1
2
3
2
1
2007-11-01
MT6L57AFS
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic
Symbol
Condition
= 5 V, I = 0
Min
Typ.
Max
Unit
Collector cutoff current
Emitter cutoff current
DC current gain
I
V
CB
V
EB
V
CE
V
CB
V
CE
V
CE
V
CE
V
CE
⎯
⎯
70
⎯
7
⎯
⎯
0.1
1
μA
μA
CBO
E
I
= 1 V, I = 0
C
EBO
h
= 1 V, I = 5 mA
⎯
140
0.5
⎯
⎯
⎯
3
FE
C
Reverse transfer capacitance
Transition frequency
C
(Note)
re
= 1 V, I = 0, f = 1 MHz
0.25
10
pF
E
f
= 3 V, I = 5 mA
GHz
T
C
⎪S ⎪2 (1)
= 1 V, I = 5 mA, f = 2 GHz
⎯
7
8.5
9.5
1.7
21e
C
Insertion gain
Noise figure
dB
dB
⎪S ⎪2 (2)
= 3 V, I = 7 mA, f = 2 GHz
21e
C
NF
= 1 V, I = 3 mA, f = 2 GHz
⎯
C
Electrical Characteristics Q2 (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
Emitter cutoff current
DC current gain
I
V
CB
V
EB
V
CE
V
CB
V
CE
V
CE
V
CE
V
CE
= 5 V, I = 0
⎯
⎯
⎯
⎯
0.1
1
μA
μA
CBO
E
I
= 1 V, I = 0
C
EBO
h
= 1 V, I = 5 mA
80
⎯
⎯
160
1.05
⎯
FE
C
Reverse transfer capacitance
Transition frequency
C
(Note)
= 1 V, I = 0, f = 1 MHz
0.8
7
pF
re
E
f
= 3 V, I = 7 mA
5
GHz
T
C
⎪S ⎪2 (1)
= 1 V, I = 5 mA, f = 1 GHz
⎯
9.5
13
1.3
⎯
21e
C
Insertion gain
Noise figure
dB
dB
⎪S ⎪2 (2)
= 3 V, I = 20 mA, f = 1 GHz
10.5
⎯
⎯
21e
C
NF
= 1 V, I = 5 mA, f = 1 GHz
2.2
C
Note: C is measured with a three-terminal method using a capacitance bridge.
re
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2007-11-01
MT6L57AFS
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01
相关型号：
MT6L57AS
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPERMINI, 2-2Q1A, ES6, 6 PIN, BIP RF Small Signal
TOSHIBA
MT6L58AE
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA
MT6L58AS
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2Q1A, 6 PIN, BIP RF Small Signal
TOSHIBA
MT6L58AT
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2JA1C, TU6, 6 PIN, BIP RF Small Signal
TOSHIBA
MT6L59T
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2JA1C, 6 PIN, BIP RF Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明