RN1106FV(TPL3) [TOSHIBA]

Small Signal Bipolar Transistor;


型号：	RN1106FV(TPL3)
厂家：	TOSHIBA
描述：	Small Signal Bipolar Transistor
文件：	总8页 (文件大小：527K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RN1101FV∼RN1106FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1101FV, RN1102FV, RN1103FV

RN1104FV, RN1105FV, RN1106FV

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit in mm

ꢀ

Ultra-small package, suited to very high density mounting

1.2 ± 0.05

ꢀ

Incorporating bias resistance into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

0.80 ± 0.05

ꢀ

A wide range of resistor values is available for use in various circuits.

Complementary to RN2101FV~RN2106FV

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

2.EMITTER

3.COLLECTOR

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

4.7

VESM

JEDEC

JEITA

―

2-1L1A

TOSHIBA

2.2

4.7

Weight: 0.0015 g(typ.)

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1101FV~1106FV

Collector-emitter voltage

Emitter-base voltage

RN1101FV~1104FV

RN1105FV, 1106FV

EBO

Collector current

100

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note)

RN1101FV~1106FV

stg

°C

Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

0.5mm

0.45mm

0.4mm

2004-06-07

RN1101FV∼RN1106FV

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 50V, I = 0

Min

Typ.

Max

Unit

―

100

500

1.52

0.71

0.33

0.15

0.145

0.138

―

CBO

Collector cut-off

current

RN1101FV~1106FV

―

= 50V, I = 0

CEO

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

0.82

0.38

0.17

0.082

0.078

0.074

= 10V, I = 0

Emitter cut-off current

―

EBO

= 5V, I = 0

―

DC current gain

―

= 5V, I = 10mA

CE C

―

Collector-emitter

saturation voltage

RN1101FV~1106FV

= 5mA, I = 0.25mA

C B

―

0.1

0.3

CE (sat)

1.1

1.2

1.3

1.5

0.6

0.7

1.0

0.5

―

2.0

2.4

3.0

5.0

1.1

1.3

1.5

0.8

―

RN1101FV

RN1102FV

―

RN1103FV

Input voltage (ON)

= 0.2V, I = 5mA

I (ON)

―

RN1104FV

―

RN1105FV

―

RN1106FV

―

RN1101FV~1104FV

Input voltage (OFF)

Transition frequency

―

= 5V, I = 0.1mA

I (OFF)

―

RN1105FV, 1106FV

RN1101FV~1106FV

―

= 10V, I = 5mA

250

Collector output

capacitance

= 10V, I = 0,

RN1101FV~1106FV

―

f = 1MH

3.29

4.7

6.11

RN1101FV

RN1102FV

15.4

32.9

1.54

3.29

0.9

28.6

61.1

2.86

6.11

1.1

RN1103FV

Input resistor

Resistor ratio

―

kΩ

RN1104FV

2.2

4.7

1.0

RN1105FV

RN1106FV

RN1101FV~1104FV

RN1105FV

R1/R2

0.0421 0.0468 0.0515

0.09 0.1 0.11

RN1106FV

2004-06-07

RN1101FV∼RN1106FV

RN1102FV

RN1101FV

RN1102FT

RN1103FV

RN1104FV

RN1105FV

RN1106FV

2004-06-07

RN1101FV∼RN1106FV

RN1101FV

RN1102FV

RN1104FV

RN1103FV

RN1105FV

RN1106FV

2004-06-07

RN1101FV∼RN1106FV

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

2004-06-07

RN1101FV∼RN1106FV

RN1101FV

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

2004-06-07

RN1101FV∼RN1106FV

Type Name

RN1101FV

Marking

RN1102FV

RN1103FV

RN1104FV

RN1105FV

RN1106FV

2004-06-07

RN1101FV∼RN1106FV

RESTRICTIONS ON PRODUCT USE

030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of

TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced

and sold, under any law and regulations.

2004-06-07

RN1106FV(TPL3) [TOSHIBA]

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