SSM3J332R,LSONYF(A [TOSHIBA]
Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | SSM3J332R,LSONYF(A |
| 厂家： | 
TOSHIBA |
| 描述： | Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3J332R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J332R
○Power Management Switch Applications
Unit: mm
+0.08
-0.05
0.42
+0.08
-0.07
0.17
•
•
1.8-V drive
Low ON-resistance: R
0.05ꢀM A
3
=
=
=
=
144 mΩ (max) (@V
GS
= -1.8 V)
= -2.5 V)
= -4.5 V)
= -10 V)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
R
R
R
72.0 mΩ (max) (@V
50.0 mΩ (max) (@V
42.0 mΩ (max) (@V
GS
GS
GS
1
2
0.95
0.95
Absolute Maximum Ratings (Ta = 25°C)
2.9±0.2
A
Characteristic
Drain-Source voltage
Symbol
Rating
-30
Unit
V
V
V
DSS
Gate-Source voltage
± 12
-6.0
V
GSS
DC
I
(Note 1)
D
Drain current
A
Pulse
I
(Note 1,2)
-24.0
1
DP
P
1: Gate
(Note 3)
t < 10s
D
2: Source
3: Drain
Power dissipation
W
2
SOT-23F
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
-55 to 150
stg
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-3Z1A
Weight: 11 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: PW ≤ 1ms, Duty ≤ 1%
Note 3: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
Equivalent Circuit (Top View)
3
3
KFJ
1
2
1
2
Start of commercial production
2010-08
1
2014-12-19
SSM3J332R
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
I
I
= -10 mA, V
= -10 mA, V
= 0 V
= 8 V
= 0 V
-30
-22
―
―
―
―
―
V
V
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
(Note 5)
Drain cut-off current
I
V
V
V
V
= -30 V, V
GS
―
-1
μA
μA
V
DSS
DS
GS
DS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±10 V, V = 0 V
―
―
±1
GSS
DS
V
= -3 V, I = -1 mA
-0.5
5.7
―
―
-1.2
―
th
D
|Y |
fs
= -3 V, I = -2.5 A
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
11.3
36.0
42.5
57.5
76.5
560
80
S
D
I
I
I
I
= -5.0 A, V
= -10 V
= -4.5 V
= -2.5 V
= -1.8 V
42.0
50.0
72.0
144
―
D
D
D
D
GS
GS
GS
GS
= -4.0 A, V
= -2.5 A, V
= -0.5 A, V
―
Drain–source ON-resistance
R
mΩ
DS (ON)
―
―
Input capacitance
C
iss
―
V
= -15 V, V
= 0 V
GS
DS
Output capacitance
C
oss
―
―
pF
ns
f = 1 MHz
Reverse transfer capacitance
C
t
―
65
―
rss
Turn-on time
Switching time
―
15
―
V
V
= -15 V, I = -2.0 A
D
on
off
DD
GS
= 0 to -4.5 V, R = 10 Ω
Turn-off time
t
―
75
―
G
Total Gate Charge
Q
―
8.2
1.1
2.2
0.90
―
g
V
V
= -15 V, I = -6.0 A,
D
DD
GS
Gate-Source Charge
Gate-Drain Charge
Q
gs1
―
―
nC
V
= -4.5 V
Q
gd
―
―
Drain-Source forward voltage
V
I
= 6.0 A, V = 0 V
GS
(Note 4)
―
1.2
DSF
D
Note4:Pulse test
Note5:If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0 V
(b) VIN
90%
OUT
0
IN
10%
−4.5 V
−4.5V
R
L
(c) VOUT
V
DS (ON)
90%
10%
10 μs
V
DD
V
R
= -15 V
DD
= 10 Ω
G
V
DD
t
t
f
r
Duty ≤ 1%
: t , t < 5 ns
V
IN
r f
t
t
off
on
Common Source
Ta = 25°C
Notice on Usage
Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the
th
D
SSM3J332R). Then, for normal switching operation, V
must be higher than V and V must be lower than
GS(on)
th, GS(off)
V
th.
This relationship can be expressed as: V
< V < V .
GS(off)
th GS(on)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R
th (ch-a)
and power dissipation P vary depending on board material, board area, board thickness
D
and pad area. When using this device, please take heat dissipation into consideration
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2014-12-19
SSM3J332R
I
– V
DS
D
I
– V
GS
D
-10
-8
-100
-10
-4.5 V
V
GS
=-10 V
-2.5 V
Common Source
= -3 V
V
DS
Pulse test
-1.8 V
-1
-6
-0.1
-4
-2
0
Ta = 100 °C
-0.01
-0.001
-0.0001
−25 °C
25 °C
Common Source
Ta = 25 °C
Pulse test
0
-0.2
-0.6
-0.8
-1
-0.4
0
-0.5
-1.0
-1.5
-2.0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– V
GS
DS (ON)
R
– V
GS
DS (ON)
200
150
200
150
I
= -0.5 A
D
I
= -2.5 A
D
Common Source
Pulse test
Common Source
Pulse test
100
50
0
100
50
0
25 °C
25 °C
Ta = 100 °C
Ta = 100 °C
− 25 °C
− 25 °C
0
-2
-4
-6
-8
-10
-12
0
-2
-6
-8
-12
-4
-10
Gate–source voltage
V
(V)
GS
Gate–source voltage
V
(V)
GS
R
– I
D
DS (ON)
R
– Ta
DS (ON)
200
150
200
150
Common Source
Pulse test
Common Source
Ta = 25 °C
-1.8 V
Pulse test
-2.5 A / -2.5 V
-4.0 A / -4.5 V
I
= -0.5 A / V = -1.8 V
GS
D
100
50
100
-2.5 V
50
0
-5.0 A / -10 V
100
-10 V
-4.5 V
-6.0
0
−50
0
50
150
0
-8.0
-2.0
-4.0
-10.0
Ambient temperature Ta (°C)
Drain current
I
(A)
D
3
2014-12-19
SSM3J332R
V
– Ta
th
|Y | – I
fs
D
-1.0
-0.8
-0.6
-0.4
100
Common Source
= -3 V
Common Source
= -3 V
V
DS
V
DS
I
= -1 mA
D
30
10
Ta = 25 °C
Pulse test
3.0
1.0
0.3
0.1
-0.2
0
-0.01
-0.1
-1
-10
-100
0
50
100
150
−50
Drain current
I
(A)
D
Ambient temperature Ta (°C)
C – V
Dynamic Input Characteristic
DS
10000
-12
5000
3000
-10
-8
V
DD
= -15 V
1000
C
V
DD
= -24 V
iss
500
300
-6
-4
-2
100
C
C
oss
50
30
Common Source
Ta = 25 °C
rss
Common Source
= -6.0 A
I
D
f = 1 MHz
Ta = 25 °C
V
= 0 V
GS
0
10
0
10
20
30
-0.1
-1
-10
-100
Total Gate Charge Qg (nC)
Drain–source voltage
V
(V)
DS
I
– V
DS
DR
t – I
D
100
10
10000
Common Source
= 0 V
Common Source
V
t
GS
Pulse test
off
V
V
= -15 V
= 0 to -4.5 V
DD
GS
D
Ta = 25 °C
t
IDR
f
R
G
= 10Ω
1000
100
G
S
1
0.1
t
on
10
1
25 °C
0.01
0.001
t
r
100 °C
0.2
−25 °C
0
0.4
0.6
0.8
1.0
1.2
-0.001
-0.01
-0.1
-1
-10
-
Drain–source voltage
V
(V)
DS
Drain current
I
(A)
D
4
2014-12-19
SSM3J332R
– t
rth
w
P
– T
a
D
1000
100
10
1600
1200
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.72 mm2 ×3)
b
a
a
800
400
b
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2×3)
0
1
-40 -20
0
20
40
60
80 100 120 140 160
0.001
0.01
0.1
1
10
100
1000
Ambient temperature Ta (°C)
Pulse width tw (s)
Safe Operating Area
-100
-10
I
max (pulse)*
D
t=1ms*
t=10ms*
I
max (Continuous)
DC operation
D
-1
-0.1
*Single pulse Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm,
Cu Pad : 645 mm2)
V
DSS
max
-0.01
-0.01
-0.1
-1
-10
-100
Drain–source voltage
V
(V)
DS
5
2014-12-19
SSM3J332R
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
6
2014-12-19
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