SSM3K336R [TOSHIBA]
Power Management Switches DC-DC Converters; 电源管理开关型DC-DC转换器
| 型号： | SSM3K336R |
| 厂家： | 
TOSHIBA |
| 描述： | Power Management Switches DC-DC Converters |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3K336R
MOSFETs Silicon N-Channel MOS
SSM3K336R
1. Applications
•
Power Management Switches
•
DC-DC Converters
2. Features
(1) 4.5 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 95 mΩ (max) (@VGS = 10 V)
RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)
3. Packaging and Pin Configuration
1. Gate
2. Source
3. Drain
SOT-23F
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
30
±20
(Note 1)
(Note 1,2)
(Note 3)
(Note 3)
3
A
IDP
8
PD
1
2
W
W
Power dissipation
(t ≤ 10 s)
PD
Channel temperature
Storage temperature
Tch
Tstg
150
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Device mounted on a FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
2012-11-14
Rev.1.0
1
SSM3K336R
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the power dissipation, PD, vary according to the
board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2012-11-14
Rev.1.0
2
SSM3K336R
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
67
100
5
±10
1
µA
Drain cut-off current
VDS = 30 V, VGS = 0 V
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
30
15
1.3
V
(Note 1) V(BR)DSX ID = 10 mA, VGS = -20 V
(Note 2)
Vth
VDS = 10 V, ID = 0.1 mA
2.5
95
140
Drain-source on-resistance
(Note 3) RDS(ON) ID = 2.0 A, VGS = 10 V
ID = 1.0 A, VGS = 4.5 V
mΩ
Forward transfer admittance
(Note 3)
|Yfs|
VDS = 10 V, ID = 1.0 A
2.5
S
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
ton
VDS = 15 V, VGS = 0 V,
f = 1 MHz
126
8
Reverse transfer capacitance
Output capacitance
26
7
Switching time (turn-on time)
VDD = 15 V, ID = 0.5 A
ns
VGS = 0 to 4.5 V, RG = 10 Ω,
Duty ≤ 1%, Input: tr, tf < 5 ns
Common source, See Chapter 5.3
Switching time (turn-off time)
toff
8
5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
nC
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Qg
Qgs1
Qgd
VDD = 15 V, VGS = 4.5V,
ID = 3.0 A
1.7
0.8
0.7
Gate-drain charge
2012-11-14
Rev.1.0
3
SSM3K336R
5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Diode forward voltage
Symbol
Test Condition
Min
Typ.
Max
-1.2
Unit
V
(Note 1)
VDSF
ID = -3.0 A, VGS = 0 V
-0.89
Note 1: Pulse measurement.
6. Marking
Fig. 6.1 Marking
2012-11-14
Rev.1.0
4
SSM3K336R
7. Characteristics Curves (Note)
Fig. 7.1 ID - VDS
Fig. 7.2 ID - VGS
Fig. 7.3 RDS(ON) - VGS
Fig. 7.4 RDS(ON) - VGS
Fig. 7.5 RDS(ON) - ID
Fig. 7.6 RDS(ON) - Ta
2012-11-14
Rev.1.0
5
SSM3K336R
Fig. 7.7 Vth - Ta
Fig. 7.9 IDR - VDS
Fig. 7.11 t - ID
Fig. 7.8 |Yfs| - ID
Fig. 7.10 C - VDS
Fig. 7.12 Dynamic Input/Output Characteristics
2012-11-14
Rev.1.0
6
SSM3K336R
Fig. 7.13 rth - tw
Fig. 7.14 PD - Ta
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2012-11-14
Rev.1.0
7
SSM3K336R
Package Dimensions
Unit: mm
Weight: 0.011 g (typ.)
Package Name(s)
TOSHIBA: 2-3Z1S
Nickname: SOT-23F
2012-11-14
Rev.1.0
8
SSM3K336R
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDEDUSE").Exceptforspecificapplicationsasexpresslystatedinthisdocument, UnintendedUseincludes, withoutlimitation,
equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,
trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices,
elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR
UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales
representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any
intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,
INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING
WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND
(2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT,
OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2012-11-14
Rev.1.0
9
相关型号：
SSM3K35MFV,L3F(B
TRANSISTOR 180 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-1L1B, VESM, 3 PIN, FET General Purpose Small Signal
TOSHIBA
SSM3K36TU
TRANSISTOR 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, UFM, 2-2U1A, 3 PIN, FET General Purpose Small Signal
TOSHIBA
SSM3K37CT
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CST3, 2-1J1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA
SSM3K37FS
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明