SSM5H08TU(TE85L,F) [TOSHIBA]
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),SOT-353VAR;
| 型号： | SSM5H08TU(TE85L,F) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),SOT-353VAR |
| 文件： | 总10页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM5H08TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H08TU
DC-DC Converter
Unit: mm
•
•
Nch MOSFET and schottky diode combined in one package
Low R and low V
DS (ON)
F
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
20
±12
1.5
6.0
0.5
0.8
150
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
Pulse
I
(Note 2)
(Note 1)
DP
P
D
Drain power dissipation
Channel temperature
W
t = 10s
T
ch
°C
UFV
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
JEDEC
⎯
⎯
JEITA
Characteristics
Symbol
Rating
Unit
TOSHIBA
2-2R1A
Maximum (peak) reverse voltage
Reverse voltage
V
25
20
V
V
A
RM
Weight: 7 mg (typ.)
V
R
Average forward current
I
0.5
O
Peak one cycle surge forward current
(non-repetitive)
I
2 (50 Hz)
125
A
FSM
Junction temperature
T
j
°C
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Storage temperature
Operating temperature
Symbol
Rating
−55~125
−40~100
Unit
°C
T
stg
T
opr
°C
(Note 3)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: Pulse width limited by max channel temperature
Note 3: Operating temperature limited by max channel temperature and max junction temperature
1
2012-09-20
SSM5H08TU
Marking
Equivalent Circuit
5
4
5
4
KER
2
1
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation
fully into account.
2
2012-09-20
SSM5H08TU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±12 V, V = 0Ｖ
Min
Typ.
Max
Unit
I
V
⎯
20
12
⎯
0.4
1.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
±1
⎯
μA
GSS
GS
DS
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0Ｖ
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
V
= -12 V
⎯
⎯
Drain Cut-off current
I
V
V
V
= 20 V, V
= 0Ｖ
⎯
1
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
Forward transfer admittance
V
= 3 V, I = 0.1 mA
⎯
1.1
⎯
th
D
|Y |
fs
= 3 V, I = 0.75 A
(Note 4)
(Note 4)
(Note 4)
2.8
140
180
125
17
S
D
I
I
= 0.75 A, V
= 4 V
160
220
⎯
D
D
GS
GS
Drain-Source on-resistance
R
mΩ
DS (ON)
= 0.75 A, V
= 2.5 V
Input capacitance
C
V
V
V
V
V
= 10 V, V
= 10 V, V
= 10 V, V
= 0Ｖ, f = 1 MHz
= 0Ｖ, f = 1 MHz
= 0Ｖ, f = 1 MHz
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
GS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
C
t
42
⎯
Turn-on time
Turn-off time
= 10 V, I = 0.75 A
15.5
8.5
⎯
D
Switching time
ns
= 0~2.5 V, R = 4.7 Ω
t
⎯
G
off
Note 4: Pulse measurement
Switching Time Test Circuit
(a) Test circuit
(b) V
(c) V
IN
2.5 V
0 V
90%
V
= 10 V
DD
2.5 V
OUT
R
= 4.7 Ω
G
IN
10%
<
Duty 1%
0
V
: t , t < 5 ns
IN
r
f
Common source
V
DD
10 μs
90%
10%
OUT
Ta = 25°C
V
DD
V
DS (ON)
t
t
f
r
t
on
t
off
Precaution
V
th
can be expressed as voltage between gate and source when the low operating current value is I
100 μA for
D =
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (off)
GS (on)
th
lower voltage than V .
th
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Be sure to take this into consideration when using the device.
3
2012-09-20
SSM5H08TU
Schottky Diode
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
⎯
⎯
⎯
⎯
V
V
I
I
= 0.3 A
= 0.5 A
0.38
0.43
⎯
0.45
⎯
V
V
F (1)
F (2)
F
F
Forward voltage
Reverse current
I
V
V
= 20 V
50
μA
pF
R
R
R
Total capacitance
C
= 0 V, f = 1 MHz
46
⎯
T
Precaution
The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to
other switching diodes. This current leakage and improper operating temperature or voltage may cause
thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design
and safety design.
4
2012-09-20
SSM5H08TU
MOS Electrical Characteristics Graph
ID - VGS (MOSFET)
ID - VDS (MOSFET)
3.0
10000
1000
100
10
Common Source
VDS=3V
Common Source
Ta=25℃
4.0V
2.5V
2.5
2.0
1.5
1.0
0.5
0.0
2.0V
Ta=85℃
25℃
VGS=1.8V
1
-25℃
0.1
0.01
0.0
0.5
1.0
Drain-Source voltage
1.5
2.0
0
1
2
3
4
Gate-Source voltage
V
(V)
GS
V
(V)
DS
RDS(ON) - VGS (MOSFET)
RDS(ON) - ID (MOSFET)
0.5
500
Common Source
ID=0.75A
Common Source
Ta=25℃
0.4
0.3
0.2
0.1
0
400
300
200
100
0
25℃
2.5V
Ta=85℃
-25℃
VGS=4.0V
0
2
4
6
8
0
0.5
1
1.5
2
2.5
Drain current I (A)
D
Gate-Source voltage
V
(V)
GS
Vth - Ta (MOSFET)
RDS(ON) - Ta (MOSFET)
2
1.8
1.6
1.4
1.2
1
0.5
0.4
0.3
0.2
0.1
0
Common Source
ID=0.1mA
Common Source
ID=0.75A
VDS=3V
2.5V
0.8
0.6
0.4
0.2
0
4.0V
Vgs=
-25
0
25
50
75
100
-25
0
25
50
75
100
Ambient temperture Ta (℃)
Ambient temperture Ta (℃)
5
2012-09-20
SSM5H08TU
|Yfs| - ID (MOSFET)
C - VDS (MOSFET)
100
1000
100
10
Common Source
DS=3V
Ta=25℃
V
10
C
iss
C
oss
1
C
rss
0.1
Common Source
GS=0V
V
f=1MHz
Ta=25℃
1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
Drain-Source voltage
V
(V)
Drain current
I
(A)
D
DS
t - ID (MOSFET)
IDR - VDS (MOSFET)
1000
100
10
4
3.5
3
Common Source
VDD=10V
Common Source
VGS=0
toff
V
VGS=0～2.5V
Ta=25℃
Ta=25℃
tf
2.5
2
ton
tr
1.5
1
1
0.5
0
0.1
0
-0.2
-0.4
-0.6
-0.8
-1
0.01
0.1
1
10
Drain-Source voltage
V
(V)
DS
Drain current
I
(A)
D
Dynamic Input Characteristic (MOSFET)
P
– Ta (MOSFET)
D
10
8
1.2
1
Common Source
Mounted on FR4 board
V
DD=10V
(25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 645 mm2)
ID=1.5A
Ta=25℃
t = 10 s
0.8
0.6
6
DC
4
0.4
0.2
2
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
50
100
150
Tatal gate charge
Q
(nC)
g
Ambient temperature Ta (°C)
6
2012-09-20
SSM5H08TU
Safe operating area (MOSFET)
10
I
max (Pulsed) *
D
1ms
10ms
1
I
max
D
(Continuous)
100ms
DC operation
Ta=25℃
0.1
Mounted on FR4 board
・
・
1.6 t
(25.4 mm
25.4 mm
Cu pad: 645 mm2 )
*:Single nonrepetive Pulse
0.01
・
Ta
25°C
Curves must be derated linealy
with increase in temperture.
0.001
0.1
1
10
100
Drain-Source voltage
V
(V)
DS
7
2012-09-20
SSM5H08TU
SBD Electrical Characteristics Graph
I
– V (SBD)
I – V (SBD)
R R
F
F
1000
100
10
10
1
125
100
75
75
100
50
0.1
50
Ta = 25°C
Ta = 25°C
0.01
0
Pulse measurement
1
0
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
Forward voltage
V
F
(V)
Reverse voltage
V
(V)
R
r
th
– t (SBD)
w
C – V (SBD)
T R
3000
1000
1000
100
10
f = 1 MHz
Ta = 25°C
100
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
2
1
0.001
00.1 0.1 10 100 1000
1
Pulse width
t
(s)
w
10
1
0.01
0.1
1
10
100
Reverse voltage
V
(V)
R
8
2012-09-20
SSM5H08TU
Transient Thermal Impedance Graph
r
th
– t (MOSFET)
w
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
r
th
– t (SBD)
w
1000
100
10
1
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
2
0.001
0.01
0.1
1
10 100 1000
Pulse width
t
(s)
w
9
2012-09-20
SSM5H08TU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
10
2012-09-20
相关型号：
©2020 ICPDF网 联系我们和版权申明