SSM6J06FU [TOSHIBA]
Power Management Switch High Speed Switching Applications; 电源管理开关高速开关应用型号: | SSM6J06FU |
厂家: | TOSHIBA |
描述: | Power Management Switch High Speed Switching Applications |
文件: | 总6页 (文件大小:193K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSM6J06FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU
Power Management Switch
High Speed Switching Applications
Unit: mm
·
·
Small package
Low on resistance : Ron = 0.5 Ω max (V
: Ron = 0.7 Ω max (V
= −4 V)
= −2.5 V)
GS
GS
·
Low gate threshold voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
-20
±12
V
V
DS
V
GSS
DC
Drain current
I
-650
-1300
D
mA
Pulse
I
DP
P
D
Drain power dissipation (Ta = 25°C)
300
mW
JEDEC
JEITA
―
―
(Note 1)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
-55~150
stg
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
Note 1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm2 ´ 6) Figure 1.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±12 V, V = 0
Min
Typ.
Max
Unit
I
V
¾
-20
¾
¾
¾
±1
¾
mA
V
GSS
GS
DS
Drain-source breakdown voltage
Drain cut-off current
V
I
= -1 mA, V
= 0
GS
(BR) DSS
D
I
V
V
V
= -20 V, V = 0
GS
¾
-1
-1.1
¾
mA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= -3 V, I = -0.1 mA
-0.6
0.6
¾
¾
th
D
Forward transfer admittance
ïY ï
fs
= -3 V, I = -0.3 A
(Note 2)
(Note 2)
(Note 2)
¾
S
D
I
I
= -0.3 A, V
= -4 V
0.4
0.55
160
25
0.5
0.7
¾
D
D
GS
GS
Drain-source ON resistance
R
W
DS (ON)
= -0.3 A, V
= -2.5 V
¾
Input capacitance
C
V
V
V
= -10 V, V
= -10 V, V
= -10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
¾
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
¾
¾
C
t
¾
90
¾
Turn-on time
Switching time
¾
27
¾
V
V
= -10 V, I = -0.3 A,
D
DD
GS
ns
= 0~-2.5 V, R = 4.7 W
G
Turn-off time
t
¾
43
¾
off
Note 2: Pulse test
Switching Time Test Circuit
Precaution
V
can be expressed as voltage between gate and source when low operating current value is I = -100 mA for
D
th
this product. For normal switching operation, V
requires higher voltage than V and V
th GS (off)
requires lower
GS (on)
voltage than V
.
th
(Relationship can be established as follows: V
< V < V
)
GS (off)
th GS (on)
Please take this into consideration for using the device.
V
GS
recommended voltage of -2.5 V or higher to turn on this product.
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SSM6J06FU
Figure 1 25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm2 ´ 6
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SSM6J06FU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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