SSM6J06FU [TOSHIBA]

Power Management Switch High Speed Switching Applications; 电源管理开关高速开关应用
SSM6J06FU
型号: SSM6J06FU
厂家: TOSHIBA    TOSHIBA
描述:

Power Management Switch High Speed Switching Applications
电源管理开关高速开关应用

开关
文件: 总6页 (文件大小:193K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
                                                        
                                                        
SSM6J06FU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM6J06FU  
Power Management Switch  
High Speed Switching Applications  
Unit: mm  
·
·
Small package  
Low on resistance : Ron = 0.5 max (V  
: Ron = 0.7 max (V  
= 4 V)  
= 2.5 V)  
GS  
GS  
·
Low gate threshold voltage  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Gate-source voltage  
V
-20  
±12  
V
V
DS  
V
GSS  
DC  
Drain current  
I
-650  
-1300  
D
mA  
Pulse  
I
DP  
P
D
Drain power dissipation (Ta = 25°C)  
300  
mW  
JEDEC  
JEITA  
(Note 1)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
-55~150  
stg  
TOSHIBA  
2-2J1D  
Weight: 6.8 mg (typ.)  
Note 1: Mounted on FR4 board.  
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm2 ´ 6) Figure 1.  
Marking  
Equivalent Circuit  
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
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SSM6J06FU  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±12 V, V = 0  
Min  
Typ.  
Max  
Unit  
I
V
¾
-20  
¾
¾
¾
±1  
¾
mA  
V
GSS  
GS  
DS  
Drain-source breakdown voltage  
Drain cut-off current  
V
I
= -1 mA, V  
= 0  
GS  
(BR) DSS  
D
I
V
V
V
= -20 V, V = 0  
GS  
¾
-1  
-1.1  
¾
mA  
V
DSS  
DS  
DS  
DS  
Gate threshold voltage  
V
= -3 V, I = -0.1 mA  
-0.6  
0.6  
¾
¾
th  
D
Forward transfer admittance  
ïY ï  
fs  
= -3 V, I = -0.3 A  
(Note 2)  
(Note 2)  
(Note 2)  
¾
S
D
I
I
= -0.3 A, V  
= -4 V  
0.4  
0.55  
160  
25  
0.5  
0.7  
¾
D
D
GS  
GS  
Drain-source ON resistance  
R
W
DS (ON)  
= -0.3 A, V  
= -2.5 V  
¾
Input capacitance  
C
V
V
V
= -10 V, V  
= -10 V, V  
= -10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
¾
pF  
pF  
pF  
iss  
rss  
oss  
on  
DS  
DS  
DS  
GS  
GS  
GS  
Reverse transfer capacitance  
Output capacitance  
C
¾
¾
C
t
¾
90  
¾
Turn-on time  
Switching time  
¾
27  
¾
V
V
= -10 V, I = -0.3 A,  
D
DD  
GS  
ns  
= 0~-2.5 V, R = 4.7 W  
G
Turn-off time  
t
¾
43  
¾
off  
Note 2: Pulse test  
Switching Time Test Circuit  
Precaution  
V
can be expressed as voltage between gate and source when low operating current value is I = -100 mA for  
D
th  
this product. For normal switching operation, V  
requires higher voltage than V and V  
th GS (off)  
requires lower  
GS (on)  
voltage than V  
.
th  
(Relationship can be established as follows: V  
< V < V  
)
GS (off)  
th GS (on)  
Please take this into consideration for using the device.  
V
GS  
recommended voltage of -2.5 V or higher to turn on this product.  
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SSM6J06FU  
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SSM6J06FU  
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SSM6J06FU  
Figure 1 25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm2 ´ 6  
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SSM6J06FU  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
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