SSM6K30FE(TE85L,F) [TOSHIBA]

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP;
SSM6K30FE(TE85L,F)
型号: SSM6K30FE(TE85L,F)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.2A I(D),TSOP

文件: 总6页 (文件大小:261K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM6K30FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII)  
SSM6K30FE  
High-speed switching  
DC-DC Converter  
Unit: mm  
Small package  
Low R : R  
= 210 m(max) (@V  
= 10 V)  
= 4 V)  
DS (ON) DS(ON)  
GS  
: R  
= 420 m(max) (@V  
GS  
DS(ON)  
High-speed switching: t = 19 ns (typ.)  
on  
: t = 10 ns (typ.)  
off  
Absolute Maximum Ratings (Ta = 25°C)  
1,2,5,6: Drain  
3: Gate  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
4: Source  
V
20  
±20  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
1.2  
D
Drain current  
A
JEDEC  
JEITA  
Pulse  
I
2.4  
DP  
Drain power dissipation  
Channel temperature  
Storage temperature  
P
(Note 1)  
ch  
500  
mW  
°C  
D
TOSHIBA  
2-2N1J  
T
150  
T
55 to 150  
°C  
Weight: 3 mg (typ.)  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm (t), Cu pad: 645 mm2)  
Marking  
Equivalent Circuit (top view)  
6
5
KA  
2
4
6
5
4
1
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), ensure that the  
environment is protected against static electricity. Operators should wear anti-static clothing, and containers  
and other objects that come into direct contact with devices should be made of anti-static materials.  
1
2009-02-23  
SSM6K30FE  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±16 V, V  
= 0 V  
20  
±1  
μA  
V
GSS  
GS  
I = 1 mA, V  
D
DS  
Drain-Source breakdown voltage  
Drain cut-off current  
V
= 0 V  
(BR) DSS  
GS  
= 20 V, V  
I
V
V
V
= 0 V  
1
μA  
V
DSS  
DS  
DS  
DS  
GS  
Gate threshold voltage  
V
= 5 V, I = 0.1 mA  
1.1  
0.68  
2.3  
th  
D
Forward transfer admittance  
Y ⏐  
= 5 V, I = 0.6 A  
(Note 2)  
(Note 2)  
(Note 2)  
S
fs  
D
I
I
= 0.6 A, V  
= 10 V  
= 4 V  
145  
260  
60  
17  
47  
19  
10  
210  
420  
D
D
GS  
GS  
Drain-Source on-resistance  
R
mΩ  
DS (ON)  
= 0.6 A, V  
Input capacitance  
C
V
V
V
V
V
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
pF  
pF  
pF  
iss  
rss  
oss  
on  
DS  
DS  
DS  
DD  
GS  
GS  
GS  
GS  
Reverse transfer capacitance  
Output capacitance  
C
C
t
Turn-on time  
Switching time  
= 10 V, I = 0.6 A,  
D
ns  
= 0 to 4 V, R = 10 Ω  
Turn-off time  
t
G
off  
Note 2: Pulse measurement  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
IN  
4 V  
0 V  
90%  
Out  
4 V  
In  
10%  
0
V
DD  
(c) V  
OUT  
10 μs  
10%  
90%  
V
DD  
V
= 10 V  
= 10 Ω  
DD  
V
DS (ON)  
R
t
f
t
G
r
Duty 1%  
: t , t < 5 ns  
t
t
off  
on  
V
IN  
r f  
Common source  
Ta = 25°C  
Precaution  
V
th  
can be expressed as the voltage between the gate and source when the low operating current value is  
I
D
= 0.1 mA for this product. For normal switching operation, V requires a higher voltage than V and  
GS (on) th  
V
V
requires a lower voltage than V . (The relationship can be established as follows:  
th  
GS (off)  
GS (off)  
< V < V  
)
th  
GS (on).  
Be sure to take this into consideration when using the device.  
2
2009-02-23  
SSM6K30FE  
I
– V  
D
DS  
– V
I
D
GS  
3
2.5  
2
10  
1
Common Source  
Ta=25℃  
Common Source  
VDS=3V  
10V  
6V  
4V  
3.7V  
25℃  
0.1  
1.5  
1
3.3V  
-25℃  
Ta=100℃  
0.01  
0.001  
0.0001  
3.0V  
0.5  
0
2.5V  
VGS=2.1V  
0
0.5  
1
1.5  
2
0
1
2
3
4
Drain-So  
u
r
c
e
v
o
lt  
a
g
e
V
(V)  
DS  
Gate-Source voltage  
V
(V)  
GS  
R
– I  
DS(ON) D  
R
– V  
DS(ON)  
GS  
0.5  
0.5  
Common Source  
Common Source  
Ta=25℃  
I =0.6A  
D
0.4  
0.3  
0.2  
0.1  
0
0.4  
0.3  
0.2  
0.1  
0
VGS=4V  
Ta=100℃  
25℃  
10V  
-25℃  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
2.4  
0
2
4
6
8
10  
12  
I
Drain current  
(A)  
Gate-Source voltage  
V
(V)  
D
GS  
RTa  
DS(ON)  
V
Ta  
th  
2
0.5  
0.4  
0.3  
0.2  
0.1  
0
Common Source  
ID=0.6A  
Common Source  
ID=0.1mA  
1.8  
VDS=5V  
1.6  
1.4  
1.2  
1
VGS=2.5V  
0.8  
0.6  
0.4  
0.2  
0
4V  
-25  
0
25  
50  
75  
100  
125  
150  
-25  
0
25  
50  
75  
100  
125  
150  
Ambient temperatureTa (°C)  
Ambient temperature Ta (°C)  
3
2009-02-23  
SSM6K30FE  
DS  
Y – I  
I– V
D
fs  
DR  
3
2.5  
2
10000  
1000  
100  
10  
Common Source  
VGS=0  
Common Source  
=5V  
V
DS  
Ta=25℃  
Ta=25℃  
1.5  
1
0.5  
0
1
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
0.001  
0.01  
0.1  
1
10  
Drain-Source voltage  
V
(V)  
DS  
Dra  
in
c
u
r
r
e
n
t
I
(A)  
D  
C – V  
DS  
t – I  
D
1000  
100  
10  
1000  
100  
10  
Common Source  
GS=0V  
Common Source  
VDD=10V  
V
f=1MHz  
Ta=25℃  
V
GS=04V  
toff  
Ta=25℃  
tf  
Ciss  
ton  
Coss  
Crss  
tr  
1
1
0.1  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
Drain-Source voltage  
V
(V)  
Drain current
I
(A)  
DS  
D
Dynamic Input Characteristics  
12  
10  
8
Common Source  
DD=16V  
V
ID=1.2A  
Ta=25℃  
6
4
2
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Total gate capacitance Qg (nC)  
4
2009-02-23  
SSM6K30FE  
Safe operating area  
10  
IDmax (Pulse) *  
1ms  
1
10ms  
IDmax  
(continuous)  
DC operation  
Ta=25℃  
100ms  
0.1  
Mounted on FR4 board  
(25.4mm×25.4mm×1.6t)  
Cu pad:645mm2  
* Single Pulse  
0.01  
ꢀTa=25℃  
Curves must be derated linearly  
with increase in temperture.  
0.001  
0.1  
1
10  
100  
Drain-S
o
u
rc
e
v
o
lt  
a
g
e
V
(V)  
DS  
P
Ta  
D
600  
Mounted on FR4 board  
(25.4mm×25.4mm×1.6t)  
Cu pad:645mm2  
500  
400  
300  
200  
100  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient temperature Ta (°C)  
5
2009-02-23  
SSM6K30FE  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must  
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,  
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
6
2009-02-23  

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