SSM6P47NU [TOSHIBA]

Power Management Switch Applications; 电源管理开关应用
SSM6P47NU
型号: SSM6P47NU
厂家: TOSHIBA    TOSHIBA
描述:

Power Management Switch Applications
电源管理开关应用

晶体 开关 小信号场效应晶体管 光电二极管
文件: 总6页 (文件大小:186K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSM6P47NU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI)  
SSM6P47NU  
Power Management Switch Applications  
Unit: mm  
±
2.0 0.1  
B
1.5V drive  
A
Low ON-resistance:R  
= 242 m(max) (@V  
= 170 m(max) (@V  
= 125 m(max) (@V  
= -1.5 V)  
= -1.8 V)  
= -2.5 V)  
= -4.5 V)  
DS(  
DS(  
DS(  
DS(  
on)  
on)  
on)  
on)  
GS  
GS  
GS  
R
R
R
=
95 m(max) (@V  
GS  
0
0.05  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2  
Common)  
0.13  
*BOTTOM VIEW  
0.65  
0.65  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
0.95  
2
1
3
V
V
20  
V
V
DSS  
Gate-Source voltage  
±8  
GSS  
DC  
I
4.0  
D
Drain current  
A
6
5
4
Pulse  
I
(Note 1)  
8.0  
DP  
±
0.3 0.075  
M
0.05  
A
B
P
1
2
D
±
0.65 0.075  
0.65 0.075  
±
0.05  
M
A
B
Power dissipation (Note 2)  
W
1. Source1  
2. Gate1  
4. Source2  
5. Gate2  
t < 10s  
Channel temperature  
Storage temperature  
T
ch  
150  
°C  
°C  
3. Drain2  
6. Drain1  
T
stg  
55 to 125  
UDFN6  
JEDEC  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEITA  
TOSHIBA  
2-2Y1A  
Weight: 8.5 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: The channel temperature should not exceed 150 °C during use.  
Note 2: Total rating  
Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Marking(Top View)  
Equivalent Circuit(Top View)  
Pin Condition(Top View)  
6
5
4
D1 G2  
S2  
6
5
4
Q1  
PP4  
D1  
D2  
Q2  
G1 D2  
S1  
2
3
1
2
3
1
Polarity marking  
Polarity marking (on the top)  
*Electrodes : on the bottom  
1
2011-03-10  
SSM6P47NU  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= -1 mA, V  
= -1 mA, V  
= 0 V  
= 5 V  
-20  
-15  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
(Note 4)  
Drain cut-off current  
I
V
V
V
V
= -20 V, V  
= 0 V  
-1  
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±8 V, V  
= 0 V  
±1  
-1.0  
DS  
V
= -3 V, I = -1 mA  
-0.3  
2.8  
th  
D
Y ⏐  
= -3 V, I = -1.0 A  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
5.6  
80.5  
99.5  
122  
143  
290  
44  
S
fs  
D
I
I
I
I
= -1.5 A, V  
= -1.0 A, V  
= -0.5 A, V  
= -4.5 V  
= -2.5 V  
= -1.8 V  
95  
125  
170  
242  
D
D
D
D
GS  
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
= -0.25 A, V  
= -1.5 V  
GS  
Input capacitance  
C
C
iss  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
V
= -10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
nC  
DS  
oss  
C
rss  
32  
Q
g
4.6  
0.5  
1.2  
12.0  
46.2  
0.9  
V
V
= 10 V, I = 3.5 A  
DD  
GS  
D
Gate-Source Charge  
Gate-Drain Charge  
Q
gs1  
= 4.5 V  
Q
gd  
Turn-on time  
Switching time  
t
on  
t
off  
V
V
= -10 V, I = -0.5 A,  
DD  
GS  
D
ns  
V
Turn-off time  
= 0 to -2.5 V, R = 4.7 Ω  
G
V
Drain-Source forward voltage  
I
= 4.0 A, V  
= 0 V  
GS  
(Note 3)  
1.2  
DSF  
D
Note 3: Pulse test  
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the  
drain-source breakdown voltage is lowered in this mode.  
Switching Time Test Circuit  
(a) Test circuit  
(b) V  
(c) V  
IN  
0 V  
90%  
V
= −10 V  
= 4.7 Ω  
DD  
0
OUT  
R
10%  
G
IN  
2.5 V  
Duty 1%  
: t , t < 5 ns  
2.5 V  
10 μs  
V
IN  
r f  
V
DS (ON)  
Common source  
90%  
10%  
OUT  
Ta = 25°C  
V
DD  
V
DD  
t
t
f
r
t
t
off  
on  
Notice on Usage  
Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the  
th  
D
SSM6P47NU). Then, for normal switching operation, V  
must be higher than V and V  
must be lower than  
GS(on)  
th,  
GS(off)  
V
th.  
This relationship can be expressed as: V  
Take this into consideration when using the device.  
< V < V  
.
GS(off)  
th  
GS(on)  
Handling Precaution  
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is  
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that  
come into direct contact with devices should be made of antistatic materials.  
Thermal resistance R  
and power dissipation P vary depending on board material, board area, board thickness  
th (ch-a)  
D
and pad area. When using this device, please take heat dissipation into consideration  
2
2011-03-10  
SSM6P47NU  
(Q1, Q2 Common)  
I
– V  
DS  
I
– V  
GS  
D
D
-8  
-6  
-4  
-2  
-10  
-1  
Common Source  
= -3 V  
-2.5 V  
-4.5 V  
V
DS  
Pulse Test  
-1.8 V  
-0.1  
V
= -1.5 V  
GS  
-25 °C  
Ta = 100 °C  
25 °C  
-0.01  
-0.001  
Common Source  
Ta = 25 °C  
Pulse Test  
-0.8  
0
-0.0001  
0
-1.0  
-0.2  
-0.4  
-0.6  
-1  
0
-2.0  
Drain–source voltage  
V
(V)  
DS  
Gate–source voltage  
V
(V)  
GS  
R
– I  
D
R
– V  
GS  
DS (ON)  
DS (ON)  
300  
200  
300  
200  
I
= -1.5 A  
Common Source  
Ta = 25°C  
D
Common Source  
Pulse Test  
Pulse Test  
-1.5 V  
-1.8 V  
25 °C  
-2.5 V  
Ta = 100 °C  
100  
100  
V
= -4.5 V  
GS  
-25 °C  
0
0
0
-2  
-4  
-6  
-8  
0
-2.0  
-4.0  
-6.0  
-8.0  
Gate–source voltage  
V
(V)  
GS  
Drain current  
I
(A)  
D
V
Ta  
th  
R
Ta  
DS (ON)  
300  
-1.0  
Common Source  
Pulse Test  
Common Source  
= -3 V  
V
DS  
= -1 mA  
I
D
-1.0 A / -2.5 V  
200  
100  
0
-0.5 A / -1.8 V  
-0.5  
-0.25 A / -1.5 V  
I
= -1.5 A / V  
= -4.5 V  
GS  
D
0
50  
0
50  
100  
150  
50  
0
50  
100  
150  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
3
2011-03-10  
SSM6P47NU  
(Q1, Q2 Common)  
I
– V  
DS  
DR  
|Y | – I  
fs  
D
10  
1
10  
Common Source  
= 0 V  
Pulse Test  
Common Source  
V
V
= -3 V  
GS  
DS  
Ta = 25°C  
Pulse Test  
D
3
1
I
G
DR  
-25 °C  
S
0.1  
Ta =100 °C  
25 °C  
0.01  
0.3  
0.1  
0.001  
-1  
-0.1  
-10  
0
0.5  
1.0  
1.5  
-0.01  
Drain current  
I
(A)  
Drain–source voltage  
V
(V)  
D
DS  
C – V  
t – I  
D
DS  
1000  
10000  
Common Source  
V
V
= -10 V  
= 0 to -2.5 V  
DD  
GS  
t
off  
Ta = 25 °C  
300  
100  
R
G
= 4.7Ω  
1000  
100  
C
iss  
t
f
C
C
oss  
30  
10  
t
on  
10  
1
Common Source  
Ta = 25 °C  
rss  
f = 1 MHz  
t
r
V
= 0 V  
GS  
-0.1  
-1  
-10  
-100  
-0.001  
-0.01  
-0.1  
-1  
-10  
Drain-source voltage  
V
(V)  
DS  
Drain current  
I
(A)  
D
Dynamic Input Characteristic  
-8  
-6  
-4  
-2  
0
Common Source  
= -3.5 A  
Ta = 25°C  
I
D
V
= - 10 V  
DD  
V
= - 16 V  
DD  
0
2
4
6
8
10  
Total gate charge Qg (nC)  
4
2011-03-10  
SSM6P47NU  
P
Ta  
D
R
th  
t  
w
1400  
1200  
1000  
800  
1000  
100  
a: Mounted on FR4 board  
b
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)  
b: Mounted on FR4 board  
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm2  
)
a
a
600  
400  
10  
Single pulse  
b
a. Mounted on F4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
200  
b. Mounted on F4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.13 mm2)  
1
0.001  
0
1
10  
100  
1000  
-40 -20  
0
20 40 60 80 100 120 140 160  
0.01  
0.1  
Ambient temperature Ta (°C)  
Pulse width tw (s)  
5
2011-03-10  
SSM6P47NU  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR  
APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
6
2011-03-10  

相关型号:

SSM6P49NU

TRANSISTOR 4 A, 20 V, 0.045 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, 2-1Y1A, UDFN6, 6 PIN, FET General Purpose Power
TOSHIBA

SSM6P49NU(TE85L)

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4A I(D),LLCC
TOSHIBA

SSM6P49NU,LF(T

Power Field-Effect Transistor
TOSHIBA

SSM6P54TU

High-Speed Switching Applications
TOSHIBA

SSM6P54TU(TE85L,F)

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,1.2A I(D),SOT-363VAR
TOSHIBA

SSM6P54TU,LF

Small Signal Field-Effect Transistor
TOSHIBA

SSM6P56FE

Small Signal Field-Effect Transistor
TOSHIBA

SSM7002DGU

Dual N-channel Enhancement-mode Power MOSFETs
SSC

SSM7002EGU

N-channel Enhancement-mode Power MOSFET
SSC

SSM7002KGEN

N-channel Enhancement-mode Power MOSFET
SSC

SSM70T03GH

N-channel Enhancement-mode Power MOSFET
SSC

SSM70T03GJ

N-channel Enhancement-mode Power MOSFET
SSC