TA2145AFG [TOSHIBA]
3 V Stereo Headphone Amplifier (3 V USE); 3 V立体声耳机放大器( 3 V使用)型号: | TA2145AFG |
厂家: | TOSHIBA |
描述: | 3 V Stereo Headphone Amplifier (3 V USE) |
文件: | 总16页 (文件大小:310K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TA2145AFG
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA2145AFG
3 V Stereo Headphone Amplifier (3 V USE)
The TA2145AFG is developed for play-back stereo headphone
equipments (3 V USE).
It is built in dual preamplifiers, dual OCL power amplifiers,
motor governor, DC volume control and preamplifier on/off switch
etc.
Features
•
Built-in preamplifier
Input coupling condenser-less
Built-in input capacitor for reducing buzz noise
Weight: 0.32 g (typ.)
Low noise: V = 1.2 µVrms (typ.)
ni
Preamplifier on/off switch.
Built-in power amplifier
•
OCL (Output condenser-less)
Voltage gain: G = 31 dB (typ.)
V
•
•
Built-in motor governor (Current proportion type)
Built-in DC volume control function
ATT = 82dB (Ta = 25°C, typ.)
•
•
Built-in bass boost function
Low supply current (V
CC
= 3 V, f = 1 kHz, PRE OUT = 100 mVrms, Ta = 25°C, typ.)
•
•
•
Quiescent supply current
PRE + PW: I = 8.5 mA
CCQ
= 2.5 mA
GVN: I
CC
0.1 mW × 2 ch output
I
I
= 9.8 mA (R = 32 Ω)
L
CC1
CC2
= 10.5 mA (R = 16 Ω)
L
0.5 mW × 2 ch output
I
I
= 14.0 mA (R = 32 Ω)
L
CC3
CC4
= 16.5 mA (R = 16 Ω)
L
•
Operating supply voltage range (Ta = 25°C)
= 1.8~3.6 V
V
CC (opr)
GVN V
= 2.1~3.6 V (Motor voltage = 1.8 V)
CC (opr)
1
2006-04-19
TA2145AFG
Block Diagram
M
PRE:
OFF
PRE
OUT
PW
RF
IN
PRE
SW
GVN
GVN
CTL
GVN
OUT
V
IN
B
NF
B
V
R
t
REF
CC
IN
B
V
CC
B
24
23
22
21
20
19
18
17
16
15
14
13
RIPPLE PRE
FILTER SW
PRE
B
VOL.
V
REF
VOL.
PW
PW
PW
C
B
A
VOL.
PRE
A
CONTROL
1
2
3
4
5
6
7
8
9
10
11
12
PRE
GND
IN
A
NF
A
PRE
OUT
PW
IN
V
OUT
OUT
OUT
C
PW
IN
PW
GVN
GND
CTL
B
A
C
GND
A
A
OUT
OUT
OUT
A
C
B
R
R
L
BST SW
BST: OFF
V
REF
L
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2006-04-19
TA2145AFG
Terminal Explanation (Terminal Voltage: Typical terminal voltage at no signal with test
circuit, V = 3 V, Ta = 25°C)
CC
Terminal
Voltage
(v)
Terminal
Function
Internal Circuit
No.
1
Name
The GND, except for power drive
stage and motor governer stage.
PRE GND
⎯
0
2
23
3
IN
A
B
RF
Input of preamplifier
1.2
500 Ω
500 Ω
3
2
IN
NF
NF
A
B
NF of preamplifier
1.2
V
REF
22
4
21
7
PRE OUT
PRE OUT
A
Output of preamplifier
Output of power amplifier
V
CC
B
4
1.2
OUT
OUT
OUT
B
A
C
8
9
5
5
PW IN
A
B
RF
Input of power amplifier
1.2
V
REF
20
PW IN
V
CC
V
REF
6
V
CTL
The terminal of DC volume control
⎯
6
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2006-04-19
TA2145AFG
Terminal
Voltage
(v)
Terminal
Name
Function
Internal Circuit
No.
20 kΩ
V
REF
10
10
PW IN
Input of center amplifier
1.2
C
30 kΩ
V
REF
2 kΩ
11
12
PW GND
GND for power drive stage
⎯
⎯
0
0
GVN GND
GND for motor governor stage
M
13
14
15
GVN OUT
GVN CTL
Rt
Motor terminal
⎯
16 15 14
13
The terminal of motor speed control
⎯
The terminal of amateur
compensation resistor
⎯
16
17
GVN V
V
V
for motor governor stage
for preamplifier stage and
3
3
CC
CC
CC
V
⎯
CC
power amplifier stage.
18
Muting switch of preamplifier
Preamp. on: “L” level/open
Preamp. off: “H” level
18
PRE SW
⎯
Refer to application note
4
2006-04-19
TA2145AFG
Terminal
Voltage
(v)
Terminal
Name
Function
Internal Circuit
No.
19
RF IN
Ripple filter of power supply
2.5
19
24
V
CC
Reference voltage
24
V
1.2
REF
Preamplifier and power amplifier
operate on this reference.
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2006-04-19
TA2145AFG
Application Note
•
V
and GND
CC
This IC has two VCC terminals and three GND terminals. Pattern layout should be designed carefully to
reduce the common impedance.
•
V
CC
V
(pin 17) ---------------- Preamplifier stage and power amplifier stage.
CC
GVN V
(pin 16)--------- Motor governor stage.
CC
•
GND
PRE GND (pin 1)-----------Preamplifier stage, and power amplifier stage except for the power drive stage.
PW GND (pin 11)-----------Power drive stage of power amplifier.
GVN GND (pin 12)---------Motor governor stage.
•
•
•
V
REF
It is necessary to stabilize the V
circuit, because the internal circuit operate on this reference.
REF
RF IN
As this terminal is an input terminal of the ripple filter, it cannot supply a power supply to other ICs etc.
Preamplifier
Input signal should be applied to V
REF
standard, otherwise pop noise become bigger when V is turned on
CC
and off.
•
Power amplifier
It is necessary to insert the coupling capacitor through the PW IN terminal. In case that DC current or DC
voltage is applied to the PW IN terminal, the internal circuit has unbalance and the power amplifier doesn’t
operate normally.
•
•
Operating supply voltage range of motor governor stage
As for the minimum of operating supply voltage range, the motor voltage is 1.8 V.
In case that it is more than 1.8 V, the low voltage performance becomes bad.
PRE SW sensitivity (Ta = 25°C)
PRE SW
4
3.6 V
“H”
PRE AMP: OFF
3
2
1
3.0 V
1.8 V
1.5 V
1.2 V
0.5 V
0
1.5
2.0
2.5
3.0
3.5
4.0
Supply voltage
V
(V)
CC
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2006-04-19
TA2145AFG
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Supply voltage
Symbol
Rating
Unit
V
V
4
400
CC
(Note 1)
(Note 2)
Power dissipation
P
mW
D
925
Output current (PW AMP.)
Output current (GVN)
Operating temperature
Storage temperature
I
200
mA
mA
°C
O (PW)
I
700
O (GVN)
T
opr
−25~75
−55~150
T
stg
°C
Note 1: IC only: Derated above Ta = 25°C in the proportion 3.2 mW/°C
Note 2: IC + PCB (TOSHIBA typical PCB): Derated above Ta = 25°C in the proportion7.4 mW/°C
7
2006-04-19
TA2145AFG
Electrical Characteristics
(Unless otherwise specified, V = 3 V, Ta = 25°C, f = 1 kHz, SW2: a, SW5: OPEN
CC
Preamplifier:
R = 2.2 kΩ, R = 10 kΩ, SW1: ON, SW3: b, SW4: b
g L
Power amplifier: R = 600 Ω, R = 16 Ω, Vol.: max, SW1: OPEN, SW3: a, SW4: a
Motor governor: I = 100 mA, SW1: OPEN, SW3: b, SW4: b)
g
L
m
Test
circuit
Characteristic
Symbol
Test condition
Min
Typ.
7.5
Max
13
Unit
mA
Pre off, V = 0, Vol.: min,
SW4: b, SW5: ON
in
I
I
⎯
⎯
CCQ1
CCQ2
Quiescent supply current
⎯
⎯
⎯
⎯
⎯
V
V
V
= 0, Vol.: min, SW4: b
= −10dBV, SW2: b
= −10dBV
⎯
⎯
8.5
86
14.5
⎯
in
o
Open loop voltage gain
Closed loop voltage gain
Maximum output voltage
Total harmonic distortion
G
G
dB
dB
VO
VC
om
⎯
35
⎯
o
V
THD = 1%
550
⎯
720
0.02
⎯
mVrms
%
THD1
V
o
= −10dBV
0.3
R
= 2.2 kΩ, SW1: OPEN
g
Equivalent input noise
voltage
V
ni
⎯
BPF = 20 Hz~20 kHz,
NAB (G = 35dB, f = 1 kHz)
⎯
1.2
2.4
µVrms
V
Cross talk
CT1
RR1
⎯
⎯
V
= −10dBV
⎯
⎯
70
48
⎯
⎯
dB
dB
o
Ripple rejection ratio
f = 100 Hz, V = −20dBV
r
r
Preamplifier muting
attenuation
ATT1
⎯
V
o
= −10dBV, SW5: OPEN → ON
⎯
80
⎯
dB
Preamplifier on voltage
Preamplifier off voltage
Voltage gain
V
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
1.5
29
⎯
⎯
31
0
0.5
1.8
33
V
V
18 (ON)
V
= 1.8 V
CC
V
18 (OFF)
G
V
V
= −10dBV
dB
dB
mW
mW
%
V
o
Channel balance
CB
= −10dBV
−1.5
17
+1.5
⎯
o
Output power 1
P
P
R
R
= 16 Ω, THD = 10%
= 32 Ω, THD = 10%
= 1m W
28
20
0.5
o1
o2
L
L
o
Output power 2
⎯
⎯
Total harmonic distortion
THD2
P
⎯
⎯
R
= 600 Ω, SW3: b
g
Output noise voltage
V
⎯
⎯
270
400
µVrms
no
BPF = 20 Hz~20 kHz
Ripple rejection ratio
Cross talk
RR2
CT2
⎯
⎯
f = 100 Hz, V = −20dBV
⎯
⎯
52
32
⎯
⎯
dB
dB
r
r
V
o
= −10dBV
Dc volume maximum
attenuation
V
= −10dBV, SW4: a→b
o
ATT2
⎯
⎯
82
⎯
dB
(Vol.: max → min)
Supply current
I
⎯
⎯
⎯
I
I
I
= 0
⎯
⎯
2.5
⎯
3.5
0.5
mA
V
CC
m
m
m
Saturation voltage
Reference voltage
V
= 200 mA
= 100 mA
CE (sat)
∆V
∆V
0.76
0.81
0.86
V
REF
Reference voltage
fluctuation 1
⎯
⎯
⎯
V
= 2.1~3.6 V
CC
⎯
⎯
⎯
0.25
0.003
0.005
⎯
⎯
⎯
%/V
%/mA
%/°C
REF1
REF2
Reference voltage
fluctuation 2
∆V
I
m
= 25~250 mA
Reference voltage
fluctuation 3
∆V
Ta = −25~75°C
REF3
K
Current ratio
⎯
⎯
⎯
⎯
⎯
34.5
⎯
37.5
0.25
40.5
⎯
Current ratio fluctuation 1
Current ratio fluctuation 2
Current ratio fluctuation 3
∆K1
V
I
= 2.1~3.6 V
%/V
%/mA
%/°C
CC
∆K2
∆K3
= 25~250 mA
⎯
0.08
⎯
m
Ta = −25~75°C
⎯
0.005
⎯
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2006-04-19
TA2145AFG
Test Circuit
Rg = 600 Ω
(a)
V
CC
PW IN
B
SW3b
(b)
V
REF
600 Ω
PRE OUT
B
V
REF
SW2b
(b) (a)
220 µF
22 µF
18 kΩ
47 µF
180 Ω
PRE IN
B
8200 pF
5 Ω
SW1b
470 Ω
470 kΩ
SW5
1 µF
3.6 kΩ 5 kΩ
470 kΩ
24
23
IN
22
21
20
19
18
17
16
GVN
15
14
GVN GVN
CTL OUT
13
V
NF
B
PRE
OUT
PW RF IN PRE PW
Rt
REF
B
PRE SW1a
IN
B
SW
V
V
CC
B
CC
IN
A
TA2145AFG
PRE
GND
1
PRE
OUT
4
PW
PW
PW
GND GND
11 12
GVN
IN
NF
3
V
CTL
6
OUT OUT OUT
B A C
IN
A
5
IN
C
10
A
A
A
2
7
8
9
470 kΩ
470 kΩ
PW OUT
PW OUT
PW OUT
A
C
B
R
L
22 µF 470 Ω
(b) (a)
8200 pF
SW4
(a) (b)
220 µF
18 kΩ
R
L
SW2a
10 kΩ
Rg = 600 Ω
(a)
SW3a
PRE OUT
A
600 Ω
(b)
PW IN
A
V
REF
V
REF
9
2006-04-19
TA2145AFG
Characteristic Curves (Unless otherwise specified, V = 3 V, Ta = 25°C, f = 1 kHz,
CC
Preamplifier:
Power amplifier: R = 600 Ω, R = 16 Ω, Vol. = max
Motor governor: I = 100 mA)
R = 2.2 kΩ, R = 10 kΩ
g
L
g
L
m
I
, I
– V
V – V
O (DC) CC
CCQ CC
CC
16
12
8
2.5
2.0
1.5
1.0
I
(PRE + PW, Vol.: min)
CCQ1
V
REF
, PW OUT, PRE OUT
I
(PW only, Vol.: min)
CCQ2
4
I
(GVN: I = 0)
CC
m
0.5
0
0
0
1.5
2.0
2.5
3.0
3.5
4.0
0
1.5
2.0
2.5
3.0
3.5
4.0
Supply voltage
V
CC
(V)
Supply voltage
V
CC
(V)
PRE
G
VO
, G – f
PRE
CT – f
VC
100
80
40
50
60
70
80
V
= −10dBV
o
V
= −10dBV
o
G
VO
60
40
G
VC
20
0
10
100
1 k
Frequency
10 k
100 k
10
100
1 k
Frequency f (Hz)
10 k
100 k
f
(Hz)
PRE
V
om
– V
PRE
THD – V
o
CC
1000
500
THD = 1%
10
3
1
f = 10 kHz
f = 100 Hz
3
200
100
0.1
f = 1 kHz
0.03
0.01
0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
1000
10000
Supply voltage
V
CC
(V)
Output voltage
V
o
(mVrms)
10
2006-04-19
TA2145AFG
PRE
V
ni
– V
PRE
RR – V
CC
CC
20
10
20
30
f
r
= 100 Hz
V
r
= −20dBV
10
5
40
50
60
2
1
70
80
0.5
0
1.5
2.0
2.5
3.0
3.5
4.0
100 k
4.0
0
1.5
2.0
2.5
3.0
3.5
4.0
100 k
100
Supply voltage
V
(V)
Supply voltage
V
(V)
CC
CC
PW
G
– f
PW
CT – f
V
60
50
40
30
20
V
= −10dBV
o
V
o
= −10dBV
0
10
BST = ON
20
30
40
BST = ON
BST = OFF
BST = OFF
50
60
20
100
1 k
10 k
20
100
1 k
Frequency
10 k
(Hz)
Frequency
f
(Hz)
f
PW
P
– V
PW
THD – P
o
o
CC
100
30
10
V
R
= 3 V
CC
THD = 10%
= 16 Ω
L
R
= 16 Ω
L
3
1
32 Ω
10
f = 10 kHz
100 Hz
1 kHz
2
0
0.2
0.2
1.5
2.0
2.5
3.0
3.5
1
10
Supply voltage
V
CC
(V)
Output power
P
(mW)
o
11
2006-04-19
TA2145AFG
PW
V
– Vol.
PW
V
– Vol.
no
o
10
500
300
Volume
Ratio
Resistance (Pin@−GND)
Volume
Ratio
Resistance (Pin@−GND)
=
=
Volume resistance
Volume resistance
−10
0dB = −10dBV
−30
−50
100
50
30
−70
−90
10
0
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
1
Volume ratio
Volume ratio
RR – Vol.
GVN
∆V , ∆K – V
REF CC
7.5
5.0
40
50
Resistance (Pin@−GND)
Volume ratio
=
Volume resistance
0dB = −10dBV, V = −20dBV
r
2.5
∆V
REF
60
70
80
0.0
∆K
−2.5
−5.0
−7.5
0
0.2
0.4
0.6
0.8
1
1.5
2.0
2.5
Supply voltage
3.0
3.5
4.0
Volume ratio
V
CC
(V)
GVN
∆V
REF
, ∆K – I
I
, I
– Ta
m
CCQ CC
10
5
16
12
8
I
(PRE + PW, Vol. = min)
(PW only, Vol. = min)
CCQ1
∆V
REF
0
∆K
I
CCQ2
−5
−10
4
I
(GVN: I = 0)
m
CC
0
0
50
100
150
200
(mA)
250
300
−20
0
20
40
60
80
Motor current
I
Ambient temperature Ta (°C)
m
12
2006-04-19
TA2145AFG
V
– Ta
PRE
G , V
V
– Ta
om
O (DC)
1.5
40
38
800
760
720
G
: V = −10dBV
o
V
V
om
: THD = 1%
V
REF
, PW OUT, PRE OUT
1
V
om
36
34
G
V
680
640
0.5
32
30
0
600
80
−20
0
20
40
60
80
80
80
−20
0
20
40
60
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PRE
THD – Ta
PW
G , P – Ta
V o
1
35
30
25
50
V
o
= −10dBV
G
: V = −10dBV
o
V
P
o
: THD = 10%
40
30
20
10
0.1
G
V
P
o
0.01
0.001
−20
0
20
40
60
−20
0
20
40
60
80
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PW
THD – Ta
GVN
∆V , ∆K – Ta
REF
10
5
6
4
P
o
= 1 mW
2
2
1
∆K
∆V
0
REF
0.5
−2
−4
−6
0.2
0.1
−20
0
20
40
60
−20
0
20
40
60
80
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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2006-04-19
TA2145AFG
Application Circuit
V
CC
22 µF 470 Ω
M
8200 pF 1 µF
18 kΩ
470 kΩ
PRE
OFF
180 Ω
1 µF
3.6 kΩ
470 kΩ
5 kΩ
24
23
22
21
20
19
RF
IN
18
17
16
15
14
13
PRE
OUT
PW
PRE
SW
GVN
GVN
CTL
GVN
OUT
V
IN
B
NF
PW
V
R
t
REF
B
IN
B
V
CC
B
CC
TA2145AFG
PRE
GND
1
PRE
OUT
4
PW
PW
PW
GND
11
GVN
GND
12
IN
2
NF
V
IN
C
A
A
CTL
6
OUT
7
OUT
8
OUT
C
IN
A
5
B
A
A
3
9
10
470 kΩ
1 µF
8200 pF
OUT
OUT
OUT
A
C
B
470 kΩ 18 kΩ
12 kΩ
0.1 µF
R
R
22 µF
L
470 Ω
V
REF
L
BST: OFF
BST SW
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2006-04-19
TA2145AFG
Package Dimensions
Weight: 0.32 g (typ.)
15
2006-04-19
TA2145AFG
RESTRICTIONS ON PRODUCT USE
060116EBA
• The information contained herein is subject to change without notice. 021023_D
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
• The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
16
2006-04-19
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