TA2151FN [TOSHIBA]
RF Amplifier for Digital Servo CD System; 射频放大器为数字伺服CD系统
| 型号： | TA2151FN |
| 厂家： | 
TOSHIBA |
| 描述： | RF Amplifier for Digital Servo CD System |
| 文件： | 总10页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TA2151FN
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA2151FN
RF Amplifier for Digital Servo CD System
TA2151FN is a 3-beam type PUH compatible RF Amplifier for
Digital Servo to be used in the CD system.
In combination with a CMOS single chip processor
TC9462F/TC9495F, a CD system can be composed very simply.
Features
·
·
·
·
·
·
·
·
·
·
Built-in amplifier for reference (VRO, 2VRO) supply.
Built-in Auto Laser Power Control circuit.
Built-in RF amplifier.
Built-in AGC amplifier.
Weight: 0.17 g (typ.)
Built-in focus error amp and tracking error amp.
Built-in gain change circuit for CD-RW.
Capable of tracking balance control with TC9462F/TC9495F.
Built-in signal amplifier for track counter.
Capable of 4 times speed operation.
30 pin mini flat package.
1
2003-01-16
TA2151FN
Block Diagram
0.5 pF
20 k9
20 k9
BOTTOM
DETECTION
FEO
FEN
SEB
VRO
RFDC
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
15
14
13
12
11
10
9
56.4 k9
56.4 k9
60 k9
3 pF
30 k9
40 pF
10 k9
10 k9
TEO
TEN
2VRO
TEB
SEL
LDO
MDI
150 k9
20 k9
48 k9
20 k9
20 k9
100 9
RFRP
BTC
3 STATE
DET.
20 k9
11 k9
83 k9
1 k9
2.9 k9
RFCT
PKC
1.4 k9
189 k9
13 k9 2.26 k9
8
11 k9
15 pF
BOTTOM
RFRPIN
RFGO
GVSW
AGCIN
RFO
I-I
TNI
7
PEAK
189 k9
I-I
TPI
6
15 pF
60 k9
60 k9
3 k9
FPI
5
3 k9
AGC Amp.
FNI
4
VRIN
RFGC
3
GND
2
12.8 k9
12.8 k9
RFN2
V
1
CC
LDC
SW2
OFF
GVSW
Mode
SEB
GND
HiZ
Bottom Detect
Peak Detect
ON
RFRP Detect
Frequency
SEL
GND
HiZ
CD-RW
SW1
SW3
ON
GND
HiZ
ON
OFF
Low
Normal
V
V
OFF
CC
CC
OFF
ON
ON
V
High
CC
2
2003-01-16
TA2151FN
Pin Function
Pin No.
1
Symbol
I/O
Functional Description
Power supply input terminal.
Remarks
V
¾
¾
CC
RF amplitude adjustment control signal input terminal.
Controlled by 3-PWM signals.
2
RFGC
I
(PWM carrier = 88.2 kHz)
¾
RFGC input voltage: VRO ± 1.5 V
AGC amplifier voltage again: ´0.7~1.5 (typ.)
3
4
VRIN
FNI
I
I
AGC amp. Reference voltage input terminal.
Main beam I-V amp input terminal.
Connected to VRO
Connected to pin diode
output B + D
(through resistor).
Connected to pin diode
output A + C
5
FPI
I
Main beam I-V amp input terminal.
(through resistor).
Connected to pin diode
output F.
6
7
8
9
TPI
I
I
Sub beam I-V amp input terminal.
Sub beam I-V amp input terminal.
Monitor photo diode amp input terminal.
Laser diode amp input terminal.
Connected to pin diode
output E.
TNI
MDI
LDO
Connected to monitor photo
diode.
I
Connected to laser diode
control circuit.
O
Laser diode control signal input terminal and APC circuit
ON/OFF control signal terminal.
SEL
Level
APC
Circuit
Detect
Frequency
LDO
3 signals input.
(V , HiZ, GND)
CC
Connected to V
through resister (1 kW)
10
11
SEL
I
CC
GND
HiZ
OFF
ON
Low
Control signal output
V
High
CC
Tracking error balance adjustment signal input terminal.
Controlled by 3-PWM signal.
(PWM carrier = 88.2 kHz)
3 signals input.
(2VRO, VRO, GND)
TEB
I
Reference voltage (2VRO) output terminal.
12
13
2VRO
TEN
O
I
¾
2VRO = 4.2 V when V
= 5 V
CC
Connected to TEO through
feedback resistor.
TE amp negative input terminal.
14
15
16
TEO
O
O
O
TE error signal output terminal.
¾
¾
¾
RFDC
FEO
RF signal peak detect output terminal.
Focus error signal output terminal.
Connected to FEO through
feedback resistor.
17
FEN
SEB
I
FE amp negative input terminal.
RFRP output circuit switching terminal.
Bottom
Detection Detection
Peak
SEB Level
18
I
Low (GND) is for normal use.
GND
ON
ON
OFF
V
CC
Reference voltage (VRO) output terminal.
19
VRO
O
¾
VRO = 2.1 V when V
= 5 V
CC
3
2003-01-16
TA2151FN
Pin No.
Symbol
RFRP
I/O
Functional Description
Track count signal output terminal.
Remarks
20
21
22
23
24
25
O
I
¾
BTC
Time constant adjustment terminal for bottom detection.
RFRP signal center level output terminal.
Adjusted by capacitance.
RFCT
PKC
O
I
¾
Time constant adjustment terminal for peak detection.
Input terminal for track count signal output amp.
Output terminal for RF signal amplitude adjustment amp.
Amp (FE, TE) gain switching terminal.
Adjusted by capacitance.
RFRPIN
RFGO
I
¾
¾
O
GVSW
Mode
Low (GND) is for 5 times
gain.
26
GVSW
I
GND
HiZ
CD-RW
Normal
V
CC
Connected to RFO through
capacitance.
27
AGCIN
I
Input terminal for RF signal amplitude adjustment amp.
28
29
30
RFO
GND
RFN2
O
¾
I
Output terminal for RF signal amp.
Ground terminal.
¾
¾
¾
Input terminal for RF signal amp.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power supply voltage
Power dissipation
V
8
V
mW
°C
CC
P
500
D
Operating temperature
Storage temperature
T
-40~85
-55~150
opr
T
°C
stg
4
2003-01-16
TA2151FN
Electrical Characteristics
(unless otherwise specified, V = 5 V, Ta = 25°C, RFGC = V , GVSW = V
)
CC
CC
Test Condition
¾
CC
Test
Circuit
Characteristics
Symbol
Min
4.5
Typ.
5.0
Max
5.5
Unit
V
Assured power supply
voltage
V
¾
¾
CC
Power
supply
Power supply current 1
(normal mode)
I
1
2
GVSW = V
CC
CC
CC
SEL = HiZ
REGC = HiZ
23
33
43
mA
Power supply current 2
(CD-RW mode)
I
GVSW = GVD
Reference voltage
Output current
2VR
¾
¾
¾
¾
4.0
2.0
0.1
2.0
-3.0
5.0
5.0
4.2
¾
4.4
¾
V
Reference
voltage
(2VRO)
I
DV = -0.2 V
DV = +0.1 V
OH2
mA
Input current
I
¾
¾
OL2
Reference voltage
Reference voltage limit
Output current
VR
¾
¾
2.1
0.0
¾
2.2
¾
V
Reference
voltage
(VRO)
DVR
2 ´ VR/2VR - 1
DV = -0.2 V
%
I
¾
OH1
¾
mA
Input current
I
DV = +0.1 V
¾
¾
OL1
Transfer resistance1
(normal mode)
R
GVSW = V
153
690
¾
180
812
8
207
934
¾
T1
CC
f = 100 kHz
Rf = 20 kW
¾
kW
Transfer resistance2
(CD-RW mode)
R
T2
GVSW = GND
GVSW = V
Frequency band width1
(normal mode)
fc1
fc2
CC
-3dB point
Rf = 20 kW
¾
¾
¾
MHz
V/ms
mV
Frequency band width2
(CD-RW mode)
GVSW = GND
¾
¾
¾
8
¾
¾
¾
Output slew rate
SR
C
RFO
= 20 pF
20
RF1
Output offset voltage 1
(normal mode)
V
GVSW = V
-50
OS1
OS2
CC
VR Reference
Rf = 20 kW
Input: Open
Output offset voltage 2
(CD-RW mode)
V
GVSW = GND
¾
-100
¾
Upper limit output voltage
Lower limit output voltage
V
3.8
¾
¾
¾
OH
¾
¾
¾
GND Reference
V
V
¾
0.9
OL
LM
Permissive load
resistance
R
¾
10
¾
¾
kW
V/V
Lower limit voltage gain
Upper limit voltage gain
Frequency band width
Output slew rate
G
RFGC = 0.6 V
RFGC = 3.6 V
0.6
1.3
¾
0.7
1.5
20
0.8
1.7
¾
VL
f = 100 kHz
-3dB point
G
VH
fc
¾
¾
¾
MHz
V/ms
mV
SR
C
RFO
= 20 pF
¾
20
¾
RF2
(AGC)
Output offset voltage
Upper limit output voltage
Lower limit output voltage
V
VR Reference, Input: Open
¾
100
¾
¾
OS
OH
V
3.8
¾
¾
¾
¾
GND Reference
V
V
¾
0.9
OL
LM
Permissive load
resistance
R
¾
10
¾
¾
kW
Voltage gain
Gv
¾
¾
¾
¾
f = 1 kHz
¾
200
178
¾
¾
192
¾
V/V
mV
V
Operation ref. Voltage
LD off voltage
V
V
= 3.5 V
DC
170
MDI
LDO
APC
V
SEL = GND, V
MDI = 178 mV
Reference
CC
-0.7
-200
LDOP
Input bias current
I
¾
200
nA
I
5
2003-01-16
TA2151FN
Test
Circuit
Characteristics
Symbol
Test Condition
GVSW = V
Min
197
Typ.
232
1.05
¾
Max
267
1.20
1.0
1.0
¾
Unit
kW
Transfer resistance 1
(normal mode)
R
T1
T2
CC
f = 1 kHz
= 91 kW
¾
¾
¾
¾
R
NF
Transfer resistance 2
(CD-RW mode)
R
GVSW = GND 0.89
GVSW = V -1.0
GVSW = GND -1.0
MW
Gain balance 1
(normal mode)
GB1
GB2
fc1
CC
f = 1 kHz
= 91 kW
dB
kHz
mV
R
NF
Gain balance 2
(CD-RW mode)
¾
Frequency band width1
(normal mode)
GVSW = V
¾
¾
26.5
26.5
¾
CC
-3dB point
FE
R
NF
= 91 kW
Frequency band width2
(CD-RW mode)
fc2
GVSW = GND
GVSW = V
¾
Output offset voltage 1
(normal mode)
V
-20
20
OS1
OS2
CC
R
NF
= 91 kW
VR Reference
Output offset voltage 2
(CD-RW mode)
V
GVSW = GND -50
¾
50
Upper limit output voltage
Lower limit output voltage
V
3.8
¾
¾
¾
OH
¾
¾
GND Reference
V
V
¾
0.5
OL
LM
Permissive load
resistance
R
¾
10
¾
2.13
9.59
45
¾
2.45
11.02
¾
kW
Transfer resistance 1
(normal mode)
R
R
GVSW = V
1.81
T1
CC
f = 1 kHz
= 75 kW
¾
¾
R
NF
MW
Transfer resistance 2
(CD-RW mode)
TEB = HiZ
GVSW = GND 8.15
T2
max voltage
Voltage
ratio
T
input
NI
TEB = GND
TEB = 2VR
¾
¾
gain
R
NF
= 75 kW
DGv
%
adjustable
min voltage
range
TEB = VR
Reference
-45
¾
¾
1.0
1.0
¾
ratio
Gain balance 1
(normal mode)
GB1
GB2
fc1
GVSW = V
-1.0
CC
f = 1 kHz
¾
¾
R
NF
= 75 kW
dB
Gain balance 2
(CD-RW mode)
TEB = VR
GVSW = GND -1.0
¾
TE
Frequency band width1
(normal mode)
GVSW = V
¾
¾
44
44
¾
CC
-3dB point
kHz
R
R
= 75 kW
= 75 kW
NF
Frequency band width2
(CD-RW mode)
fc2
GVSW = GND
GVSW = V
¾
Output offset voltage 1
(normal mode)
V
-80
80
OS1
OS2
CC
NF
¾
¾
mV
V
VR Reference
Output offset voltage 2
(CD-RW mode)
V
GVSW = GND -300
¾
300
Upper limit output voltage
Lower limit output voltage
V
3.8
¾
¾
¾
OH
GND Reference
V
¾
0.5
OL
LM
Permissive load
resistance
R
¾
¾
¾
10
¾
¾
kW
Detection frequency
f
¾
¾
3.3
¾
40
¾
¾
¾
¾
kHz
C
RFDC
Upper limit output voltage
Lower limit output voltage
V
OH
¾
¾
GND Reference
V
FNI (FPI)
® RFDC
V
0.9
OL
LM
Permissive load
resistance
R
¾
10
¾
¾
kW
6
2003-01-16
TA2151FN
Test
Circuit
Characteristics
Voltage gain
Symbol
Gv
Test Condition
Min
¾
Typ.
1.7
Max
¾
Unit
V/V
¾
¾
Detection frequency
characteristic 1
fc1
SEL = HiZ
SEL = V
¾
100
¾
¾
kHz
Detection frequency
characteristic 2
fc2
¾
-1.1
0.7
10
200
-1.0
0.8
¾
¾
-0.9
0.9
¾
CC
RFRP
Operation reference
voltage 1
VR Reference
No Input
V
V
OPR1
OPR2
¾
¾
V
Operation reference
voltage 2
VR Reference
700 kHz, 1.2 Vp-p
Permissive load
resistance
R
LM
¾
kW
Detection frequency
characteristic 1
fc1
fc2
C
C
= 0.22 mF
= 0.22 mF
¾
70
¾
BTC
RFCT
¾
¾
Hz
Detection frequency
characteristic 2
¾
70
¾
PKC
RFRP
®RFCT
Output offset voltage
V
RFRP Reference, RFCT
-50
¾
50
mV
OS
Note:
If the IC is used abnormally (ex. wrongly mounted), it may be dameged or destroyed.
7
2003-01-16
TA2151FN
Test Circuit
0.5 pF
20 kW
20 kW
BOTTOM
DETECTION
FEO
RFDC
TEO
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
15
14
13
12
11
10
9
56.4 kW
56.4 kW
60 kW
3 pF
30 kW
40 pF
10 kW
10 kW
FEN
150 kW
20 kW
SEB
VRO
TEN
2VRO
TEB
SEL
LDO
MDI
48 kW
20 kW
11 kW
20 kW
RFRP
3 STATE
DET.
20 kW
BTC
100 W
83 kW
0.22 mF
1 kW
2.9 kW
RFCT
1.4 kW
PKC
189 kW
15 pF
13 kW
2.26 kW
8
0.22 mF
11 kW
BOTTOM
PEAK
RFRPIN
RFGO
GVSW
AGCIN
RFO
I-I
TNI
7
180 kW
180 kW
47 kW
47 kW
VRIN
189 kW
I-I
6
15 pF
TPI
FPI
60 kW
3 kW
5
60 kW
3 kW
AGC Amp.
FNI
4
3
GND
RFGC
2
12.8 kW
12.8 kW
V
CC
1
RFN2
8
2003-01-16
TA2151FN
Package Dimensions
Weight: 0.17 g (typ.)
9
2003-01-16
TA2151FN
RESTRICTIONS ON PRODUCT USE
000707EBA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
10
2003-01-16
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