TB7101F(T5L1.2,F) [TOSHIBA]
IC SWITCHING REGULATOR, 1150 kHz SWITCHING FREQ-MAX, PDSO8, 3 X 3 MM, 0.65 MM PITCH, PLASTIC, SON-8, Switching Regulator or Controller;
| 型号： | TB7101F(T5L1.2,F) |
| 厂家： | 
TOSHIBA |
| 描述： | IC SWITCHING REGULATOR, 1150 kHz SWITCHING FREQ-MAX, PDSO8, 3 X 3 MM, 0.65 MM PITCH, PLASTIC, SON-8, Switching Regulator or Controller CD 开关 光电二极管 |
| 文件： | 总22页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Toshiba BiCD Integrated Circuit Silicon Monolithic
TB7101F(T5L1.2,F),TB7101F(T5L1.5,F)
TB7101F(T5L1.8,F),TB7101F(T5L2.5,F)
TB7101F(T5L3.3,F)
Buck DC-DC Converter IC
The TB7101F is a single-chip buck DC-DC converter IC. The
TB7101F contains high-speed and low-on-resistance power
MOSFETs for the main switch and synchronous rectifier to
achieve high efficiency.
Features
•
Enables up to 1 A of load current (I
external components.
) with a minimum of
OUT
Weight: 0.017 g (typ.)
•
•
•
•
•
•
Fixed output voltage: V
= 1.2 V/1.5 V/1.8 V/2.5 V/3.3 V (typ.)
OUT
A high 1-MHz oscillation frequency (typ.) allows the use of small external components.
Uses only an inductor and two capacitors to achieve high efficiency.
Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
Housed in a small surface-mount package (PS-8) with a low thermal resistance.
Undervoltage lockout (UVLO), thermal shutdown (TSD) and overcurrent protection (OCP)
Parts Marking
Pin Assignment
Output
Voltage (V) Marking
Parts
Product
Parts Marking
Lot No.
L
V
N.C.
6
N.C.
5
X
FB
TB7101F
(T5L1.2, F)
8
7
1.2
1.5
1.8
2.5
3.3
7101A
7101B
7101C
7101D
7101E
TB7101F
(T5L1.5, F)
TB7101F
(T5L1.8, F)
*
TB7101F
(T5L2.5, F)
1
2
3
4
The dot (•) on the top surface indicates pin 1.
PGND
V
EN SGND
IN
TB7101F
(T5L3.3, F)
*: The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the
following two digits indicates the week of manufacture between 01 and either 52 or 53.
Manufacturing week code
(The first week of the year is 01; the last week is 52 or 53.)
Manufacturing year code (last digit of the year of manufacture)
This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care.
The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary
small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily
protect Product under all circumstances. When incorporating Product into your system, please design the system (1)
to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload
conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and
other documents referenced in this document.
1
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Ordering Information
Part Number
Shipping
TB7101F (T5L*.*, F)
Embossed tape (3000 units per reel)
Block Diagram
V
IN
Undervoltage
lockout & soft-start
EN
reference voltage
Current detection
Driver
Oscillator
L
X
Control logic
PWM comparator
Slope
compensation
Driver
V
PGND
FB
Phase
compensation
Error amplifier
0.8V (typ.)
V
COMP
Thermal
shutdown
SGND
Pin Description
Pin No.
Symbol
PGND
Description
1
2
Ground for the output section
Input pin
V
IN
This pin is placed in the standby state if V
= low. Standby current is 1 μA or less.
ENB
Enable pin
3
EN
This pin is connected to an on-chip CMOS inverter. When EN ≥ 3.5 V (@V = 5 V), the control logic is
IN
allowed to operate and thus enable the switching operation of the output section.
4
5
6
SGND
N.C.
Ground for the control logic
No-connect
N.C.
No-connect
Feedback pin
7
8
V
FB
Output voltage is set to 1.2 V/1.5 V/1.8 V/2.5 V/3.3 V (typ.) internally.
Switch pin
L
X
This output is connected to the high-side P-channel MOSFETs and low-side N-channel MOSFET.
2
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Timing Chart
Normal Operation
OSC
0
I
OUT
OUT
0
0
V
V
COMP
0
0
I
L
V
LX
T
ON
OSC : Internal oscillator output signal
T
I
: Converter output current
: Converter output voltage
: Output voltage of error amplifier
: Inductor current
OUT
V
V
OUT
COMP
I
L
V
: Switch pin voltage
LX
3
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input voltage
Enable pin voltage
−V voltage difference
V
−0.3 to 6
−0.3 to 6
V
V
IN
V
EN
V
V
− V
V − V < 0.3
EN IN
V
EN IN
EN
V
IN
Feedback pin voltage
Switch pin voltage
Switch pin current
Power dissipation
−0.3 to 6
−0.3 to 6
±1.3
V
FB
LX
LX
V
V
I
A
(Note 1)
P
0.7
W
°C
°C
°C
D
Operating junction temperature
T
−40 to 125
150
jopr
Junction temperature
Storage temperature
(Note 2)
T
j
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc)
Thermal Resistance Characteristic
Characteristics
Symbol
(j-a)
Max
Unit
Thermal resistance, junction and ambient
R
178.6 (Note 1)
°C/W
th
Note 1:
Glass epoxy board
Material: FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Note 2: The TB7101F may go into thermal shutdown at the rated maximum junction temperature. Thermal design is
required to ensure that the rated maximum operating junction temperature, T , will not be exceeded.
jopr
4
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Electrical Characteristics (unless otherwise specified: T = 25°C and V = 2.7 to 5.5 V)
j
IN
TB7101F (T5L1.2, F)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Operating input voltage
V
⎯
2.7
⎯
⎯
0.68
0.55
⎯
5.5
0.9
0.69
1
V
mA
mA
μA
V
IN (OPR)
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 5 V, V = 5 V, V = 5 V
EN FB
IN1
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
Operating current
Standby current
= 2.7 V, V = 2.7 V, V = 2.7 V
EN FB
⎯
IN2
I
= 5 V, V = 0 V, V = 0 V
EN FB
⎯
IN (STBY)
V
V
= 5 V
3.5
1.89
⎯
⎯
⎯
IH (EN) 1
IH (EN) 2
= 2.7 V
= 5 V
⎯
⎯
V
EN threshold voltage
EN input current
V
V
⎯
1.5
0.81
12.4
6.7
1.236
1.236
⎯
V
IL (EN) 1
IL (EN) 2
IH (EN) 1
IH (EN) 2
= 2.7 V
⎯
⎯
V
I
I
= 5 V, V = 5 V
EN
7.6
4.1
1.164
⎯
μA
μA
V
= 2.7 V, V = 2.7 V
EN
⎯
V
V
= 5 V, V = 5 V, I
EN OUT
= 10 mA
1.2
1.2
0.27
0.27
⎯
FB1
FB2
V
input voltage
FB
= 2.7 V, V = 2.7 V, I
EN OUT
= 10 mA 1.164
V
High-side switch on-state resistance
Low-side switch on-state resistance
High-side switch leakage current
Low-side switch leakage current
R
= 5 V, V = 5 V, I = −0.5 A
EN LX
⎯
⎯
Ω
DS (ON) (H)
R
= 5 V, V = 5 V, I = 0.5 A
EN LX
⎯
Ω
DS (ON) (L)
I
= 5 V, V = 0 V, V = 0 V
EN LX
⎯
−1
μA
μA
MHz
MHz
ms
ms
LEAK (H)
I
= 5 V, V = 0 V, V = 5 V
EN LX
⎯
⎯
1
LEAK (L)
f
f
= 5 V, V = 5 V
EN
0.85
0.85
1
1
1.15
1.15
⎯
osc1
osc2
Oscillation frequency
= 2.7 V, V = 2.7 V
EN
1
t
t
= 5 V, V = 5 V, I
= 0 A
= 0 A
OUT
2
ss1
EN OUT
Soft-start time
Detection
= 2.7 V, V = 2.7 V, I
1.4
2.4
⎯
ss2
EN
T
SD
V
= 5 V
= 5 V
⎯
160
⎯
°C
IN
Thermal
shutdown (TSD)
temperature
Hysteresis
ΔT
SD
V
V
V
V
V
⎯
2.2
2.3
⎯
20
2.4
2.5
0.1
2.8
⎯
2.6
2.7
⎯
°C
V
IN
IN
IN
IN
IN
Detection votage
Recovery voltage
Hysteresis
V
= V
= V
= V
UV
EN
EN
EN
Undervoltage
lockout (UVLO)
V
V
UVR
ΔV
V
UV
L
X
current limit
I
= 5 V
1.3
⎯
A
LIM
Note on Electrical Characteristics
The test condition T = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
j
the chip’s junction temperature can be ignored during pulse testing.
5
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Electrical Characteristics (unless otherwise specified: T = 25°C and V = 2.7 to 5.5 V)
j
IN
TB7101F (T5L1.5, F)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Operating input voltage
V
⎯
2.7
⎯
⎯
0.68
0.55
⎯
5.5
0.9
0.69
1
V
mA
mA
μA
V
IN (OPR)
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 5 V, V = 5 V, V = 5 V
EN FB
IN1
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
Operating current
Standby current
= 2.7 V, V = 2.7 V, V = 2.7 V
EN FB
⎯
IN2
I
= 5 V, V = 0 V, V = 0 V
EN FB
⎯
IN (STBY)
V
V
= 5 V
3.5
1.89
⎯
⎯
⎯
IH (EN) 1
IH (EN) 2
= 2.7 V
= 5 V
⎯
⎯
V
EN threshold voltage
EN input current
V
V
⎯
1.5
0.81
12.4
6.7
1.545
1.545
⎯
V
IL (EN) 1
IL (EN) 2
IH (EN) 1
IH (EN) 2
= 2.7 V
⎯
⎯
V
I
I
= 5 V, V = 5 V
EN
7.6
4.1
1.455
⎯
μA
μA
V
= 2.7 V, V = 2.7 V
EN
⎯
V
V
= 5 V, V = 5 V, I
EN OUT
= 10 mA
1.5
1.5
0.27
0.27
⎯
FB1
FB2
V
input voltage
FB
= 2.7 V, V = 2.7 V, I
EN OUT
= 10 mA 1.455
V
High-side switch on-state resistance
Low-side switch on-state resistance
High-side switch leakage current
Low-side switch leakage current
R
= 5 V, V = 5 V, I = −0.5 A
EN LX
⎯
⎯
Ω
DS (ON) (H)
R
= 5 V, V = 5 V, I = 0.5 A
EN LX
⎯
Ω
DS (ON) (L)
I
= 5 V, V = 0 V, V = 0 V
EN LX
⎯
−1
μA
μA
MHz
MHz
ms
ms
LEAK (H)
I
= 5 V, V = 0 V, V = 5 V
EN LX
⎯
⎯
1
LEAK (L)
f
f
= 5 V, V = 5 V
EN
0.85
0.85
1
1
1.15
1.15
⎯
osc1
osc2
Oscillation frequency
= 2.7 V, V = 2.7 V
EN
1
t
t
= 5 V, V = 5 V, I
= 0 A
= 0 A
OUT
2
ss1
EN OUT
Soft-start time
Detection
= 2.7 V, V = 2.7 V, I
1.4
2.4
⎯
ss2
EN
T
SD
V
= 5 V
= 5 V
⎯
160
⎯
°C
IN
Thermal
shutdown (TSD)
temperature
Hysteresis
ΔT
SD
V
V
V
V
V
⎯
2.2
2.3
⎯
20
2.4
2.5
0.1
2.8
⎯
2.6
2.7
⎯
°C
V
IN
IN
IN
IN
IN
Detection votage
Recovery voltage
Hysteresis
V
= V
= V
= V
UV
EN
EN
EN
Undervoltage
lockout (UVLO)
V
V
UVR
ΔV
V
UV
L
X
current limit
I
= 5 V
1.3
⎯
A
LIM
Note on Electrical Characteristics
The test condition T = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
j
the chip’s junction temperature can be ignored during pulse testing.
6
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Electrical Characteristics (unless otherwise specified: T = 25°C and V = 2.8 to 5.5 V)
j
IN
TB7101F (T5L1.8, F)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Operating input voltage
V
⎯
2.8
⎯
⎯
0.68
0.58
⎯
5.5
0.9
0.69
1
V
mA
mA
μA
V
IN (OPR)
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 5 V, V = 5 V, V = 5 V
EN FB
IN1
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
Operating current
Standby current
= 2.8 V, V = 2.8 V, V = 2.8 V
EN FB
⎯
IN2
I
= 5 V, V = 0 V, V = 0 V
EN FB
⎯
IN (STBY)
V
V
= 5 V
3.5
1.96
⎯
⎯
⎯
IH (EN) 1
IH (EN) 2
= 2.8 V
= 5 V
⎯
⎯
V
EN threshold voltage
EN input current
V
V
⎯
1.5
0.84
12.4
6.94
1.854
1.854
⎯
V
IL (EN) 1
IL (EN) 2
IH (EN) 1
IH (EN) 2
= 2.8 V
⎯
⎯
V
I
I
= 5 V, V = 5 V
EN
7.6
4.26
1.746
⎯
μA
μA
V
= 2.8 V, V = 2.8 V
EN
⎯
V
V
= 5 V, V = 5 V, I
EN OUT
= 10 mA
1.8
1.8
0.27
0.27
⎯
FB1
FB2
V
input voltage
FB
= 2.8 V, V = 2.8 V, I
EN OUT
= 10 mA 1.746
V
High-side switch on-state resistance
Low-side switch on-state resistance
High-side switch leakage current
Low-side switch leakage current
R
= 5 V, V = 5 V, I = −0.5 A
EN LX
⎯
⎯
Ω
DS (ON) (H)
R
= 5 V, V = 5 V, I = 0.5 A
EN LX
⎯
Ω
DS (ON) (L)
I
= 5 V, V = 0 V, V = 0 V
EN LX
⎯
−1
μA
μA
MHz
MHz
ms
ms
LEAK (H)
I
= 5 V, V = 0 V, V = 5 V
EN LX
⎯
⎯
1
LEAK (L)
f
f
= 5 V, V = 5 V
EN
0.85
0.85
1
1
1.15
1.15
⎯
osc1
osc2
Oscillation frequency
= 2.8 V, V = 2.8 V
EN
1
t
t
= 5 V, V = 5 V, I
= 0 A
= 0 A
OUT
2
ss1
EN OUT
Soft-start time
Detection
= 2.8 V, V = 2.8 V, I
1.4
2.4
⎯
ss2
EN
T
SD
V
= 5 V
= 5 V
⎯
160
⎯
°C
IN
Thermal
shutdown (TSD)
temperature
Hysteresis
ΔT
SD
V
V
V
V
V
⎯
2.2
2.3
⎯
20
2.4
2.5
0.1
2.8
⎯
2.6
2.7
⎯
°C
V
IN
IN
IN
IN
IN
Detection votage
Recovery voltage
Hysteresis
V
= V
= V
= V
UV
EN
EN
EN
Undervoltage
lockout (UVLO)
V
V
UVR
ΔV
V
UV
L
X
current limit
I
= 5 V
1.3
⎯
A
LIM
Note on Electrical Characteristics
The test condition T = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
j
the chip’s junction temperature can be ignored during pulse testing.
7
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Electrical Characteristics (unless otherwise specified: T = 25°C and V = 3.5 to 5.5 V)
j
IN
TB7101F (T5L2.5, F)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Operating input voltage
V
⎯
3.5
⎯
⎯
0.68
0.61
⎯
5.5
0.9
0.705
1
V
mA
mA
μA
V
IN (OPR)
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 5 V, V = 5 V, V = 5 V
EN FB
IN1
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
Operating current
Standby current
= 3.5 V, V = 3.5 V, V = 3.5 V
EN FB
⎯
IN2
I
= 5 V, V = 0 V, V = 0 V
EN FB
⎯
IN (STBY)
V
V
= 5 V
3.5
2.45
⎯
⎯
⎯
IH (EN) 1
IH (EN) 2
= 3.5 V
= 5 V
⎯
⎯
V
EN threshold voltage
EN input current
V
V
⎯
1.5
1.05
12.4
8.68
2.575
2.575
⎯
V
IL (EN) 1
IL (EN) 2
IH (EN) 1
IH (EN) 2
= 3.5 V
⎯
⎯
V
I
I
= 5 V, V = 5 V
EN
7.6
5.32
2.425
⎯
μA
μA
V
= 3.5 V, V = 3.5 V
EN
⎯
V
V
= 5 V, V = 5 V, I
EN OUT
= 10 mA
2.5
2.5
0.27
0.27
⎯
FB1
FB2
V
input voltage
FB
= 3.5 V, V = 3.5 V, I
EN OUT
= 10 mA 2.425
V
High-side switch on-state resistance
Low-side switch on-state resistance
High-side switch leakage current
Low-side switch leakage current
R
= 5 V, V = 5 V, I = −0.5 A
EN LX
⎯
⎯
Ω
DS (ON) (H)
R
= 5 V, V = 5 V, I = 0.5 A
EN LX
⎯
Ω
DS (ON) (L)
I
= 5 V, V = 0 V, V = 0 V
EN LX
⎯
−1
μA
μA
MHz
MHz
ms
ms
LEAK (H)
I
= 5 V, V = 0 V, V = 5 V
EN LX
⎯
⎯
1
LEAK (L)
f
f
= 5 V, V = 5 V
EN
0.85
0.85
1
1
1.15
1.15
⎯
osc1
osc2
Oscillation frequency
= 3.5 V, V = 3.5 V
EN
1
t
t
= 5 V, V = 5 V, I
= 0 mA
= 0 mA
OUT
2
ss1
EN OUT
Soft-start time
Detection
= 3.5 V, V = 3.5 V, I
1.3
2.4
⎯
ss2
EN
T
SD
V
= 5 V
= 5 V
⎯
160
⎯
°C
IN
Thermal
shutdown (TSD)
temperature
Hysteresis
ΔT
SD
V
V
V
V
V
⎯
2.2
2.3
⎯
20
2.4
2.5
0.1
2.8
⎯
2.6
2.7
⎯
°C
V
IN
IN
IN
IN
IN
Detection votage
Recovery voltage
Hysteresis
V
= V
= V
= V
UV
EN
EN
EN
Undervoltage
lockout (UVLO)
V
V
UVR
ΔV
V
UV
L
X
current limit
I
= 5 V
1.3
⎯
A
LIM
Note on Electrical Characteristics
The test condition T = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
j
the chip’s junction temperature can be ignored during pulse testing.
8
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Electrical Characteristics (unless otherwise specified: T = 25°C and V = 4.3 to 5.5 V)
j
IN
TB7101F (T5L3.3, F)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Operating input voltage
V
⎯
4.3
⎯
⎯
0.68
0.64
⎯
5.5
0.9
V
mA
mA
μA
V
IN (OPR)
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 5 V, V = 5 V, V = 5 V
EN FB
IN1
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
Operating current
Standby current
= 4.3 V, V = 4.3 V, V = 4.3 V
EN FB
⎯
0.775
1
IN2
I
= 5 V, V = 0 V, V = 0 V
EN FB
⎯
IN (STBY)
V
V
= 5 V
3.5
3.01
⎯
⎯
⎯
IH (EN) 1
IH (EN) 2
= 4.3 V
= 5 V
⎯
⎯
V
EN threshold voltage
EN input current
V
V
⎯
1.5
V
IL (EN) 1
IL (EN) 2
IH (EN) 1
IH (EN) 2
= 4.3 V
⎯
⎯
1.29
12.4
10.66
3.399
3.399
⎯
V
I
I
= 5 V, V = 5 V
EN
7.6
6.54
3.201
⎯
μA
μA
V
= 4.3 V, V = 4.3 V
EN
⎯
V
V
= 5 V, V = 5 V, I
EN OUT
= 10 mA
3.3
3.3
0.27
0.27
⎯
FB1
FB2
V
input voltage
FB
= 4.3 V, V = 4.3 V, I
EN OUT
= 10 mA 3.201
V
High-side switch on-state resistance
Low-side switch on-state resistance
High-side switch leakage current
Low-side switch leakage current
R
= 5 V, V = 5 V, I = −0.5 A
EN LX
⎯
⎯
Ω
DS (ON) (H)
R
= 5 V, V = 5 V, I = 0.5 A
EN LX
⎯
Ω
DS (ON) (L)
I
= 5 V, V = 0 V, V = 0 V
EN LX
⎯
−1
μA
μA
MHz
MHz
ms
ms
LEAK (H)
I
= 5 V, V = 0 V, V = 5 V
EN LX
⎯
⎯
1
LEAK (L)
f
f
= 5 V, V = 5 V
EN
0.85
0.85
1
1
1.15
1.15
⎯
osc1
osc2
Oscillation frequency
= 4.3 V, V = 4.3 V
EN
1
t
t
= 5 V, V = 5 V, I
= 0 A
= 0 A
OUT
2
ss1
EN OUT
Soft-start time
Detection
= 4.3 V, V = 4.3 V, I
1.2
2.4
⎯
ss2
EN
T
SD
V
= 5 V
= 5 V
⎯
160
⎯
°C
IN
Thermal
shutdown (TSD)
temperature
Hysteresis
ΔT
SD
V
V
V
V
V
⎯
2.2
2.3
⎯
20
2.4
2.5
0.1
2.8
⎯
2.6
2.7
⎯
°C
V
IN
IN
IN
IN
IN
Detection votage
Recovery voltage
Hysteresis
V
= V
= V
= V
UV
EN
EN
EN
Undervoltage
lockout (UVLO)
V
V
UVR
ΔV
V
UV
L
X
current limit
I
= 5 V
1.3
⎯
A
LIM
Note on Electrical Characteristics
The test condition T = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
j
the chip’s junction temperature can be ignored during pulse testing.
9
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Application Circuit Example
V
IN
EN
V
IN
V
FB
TB7101F (T5L*.*, F)
L
L
X
V
OUT
SGND
PGND
GND
GND
Figure 1 TB7101F(T5L*.*,F) Application Circuit Example
Component values (@TB7101F (T5L3.3, F), V = 5 V, Ta = 25°C)
IN
These values are presented only as a guide.
C
IN
:
Input filter capacitor = 10 μF
(ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.)
C : Output filter capacitor = 10 μF
OUT
(ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.)
Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.)
L:
Component values (@TB7101F (T5L1.2, F), V = 5 V, Ta = 25°C)
IN
These values are presented only as a guide.
C
IN
:
Input filter capacitor = 10 μF
(ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.)
C : Output filter capacitor = 22 μF
OUT
(ceramic capacitor: GRM31CB30J226K from Murata Manufacturing Co., Ltd.)
Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.)
L:
Component values need to be adjusted, depending on the TB7101F’s input/output conditions and the board layout.
Application Notes
Inductor Selection
The inductance required for inductor L can be calculated as follows:
V
V
: Input voltage (V)
: Output voltage (V)
: Oscillation frequency = 1 MHz (typ.)
: Inductor ripple current (A)
IN
V
− V
V
V
IN
IN
f
OUT OUT
OUT
L =
⋅
········· (1)
⋅ ΔI
f
osc
osc
L
ΔI
L
*: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output
current of the TB7101F is 1 A, ΔIL should be 0.3 A or so. Therefore, the inductor should have a current rating
greater than the peak output current of 1.15 A. If the inductor current rating is exceeded, the inductor becomes
saturated, leading to an unstable DC-DC converter operation.
When TB7101F (T5L3.3, F) and V = 5 V, the required inductance can be calculated as follows. Be sure to
IN
select an appropriate inductor, taking the VIN range into account.
10
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
V
− V
V
V
IN
IN
f
OUT OUT
L =
⋅
I
L
⋅ ΔI
osc
L
5.0 V − 3.3 V 3.3 V
1 MHz⋅300 mA 5 V
0
=
⋅
······ (2)
V
OUT
1
T
= Τ ⋅
T =
ON
V
f
IN
osc
= 3.7 μH
Figure 2 Inductor Current Waveform
Output Capacitor Selection
Use a ceramic capacitor as the output filter capacitor. Since a ceramic capacitor is generally sensitive to
temperature, choose one with excellent temperature characteristics (such as the JIS B characteristic). As a rule
of thumb, its capacitance should be 10 μF or greater for TB7101F (T5L3.3, F), TB7101F (T5L2.5, F), TB7101F
(T5L1.8, F), and 20 μF or greater for TB7101F (T5L1.5, F), TB7101F (T5L1.2, F). The capacitance should be set
to an optimal value that meets the system's ripple voltage requirement and transient load response
characteristics. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage;
however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated.
Component Values (@VIN = 5 V, Ta = 25°C)
These values are presented only as a guide.
The following values may need tuning depending on the TB7101F’s input/output conditions and the board
layout.
Inductance
Input Capacitance
Output Capacitance
Product
L
C
IN
C
OUT
TB7101F (T5L1.2, F)
TB7101F (T5L1.5, F)
TB7101F (T5L1.8, F)
TB7101F (T5L2.5, F)
TB7101F (T5L3.3, F)
3.3 μH
3.3 μH
3.3 μH
3.3 μH
3.3 μH
10 μF
10 μF
10 μF
10 μF
10 μF
22 μF
22 μF
10 μF
10 μF
10 μF
Undervoltage Lockout (UVLO)
The TB7101F has undervoltage lockout (UVLO) protection circuitry. The TB7101F does not provide output
voltage (V ) until the input voltage has reached V (2.5 V typ.). UVLO has hysteresis of 0.1 V (typ.). After
OUT
UVR
the switch turns on, if V drops below V
(2.4 V typ.), UVLO shuts off the switch at V
.
IN
UV
OUT
Undervoltage lockout
recovery voltage: V
UVR
Undervoltage lockout
detection voltage: V
UV
V
IN
Hysteresis: ΔVUV
GND
Switching operation starts
V
OUT
GND
Switching operation stops
Soft start
Figure 4 Undervoltage Lockout Operation
11
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Thermal Shutdown (TSD)
The TB7101F provides thermal shutdown. When the junction temperature continues to rise and reaches T
SD
(160°C typ.), the TB7101F goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of
about 20°C. The device is enabled again when the junction temperature has dropped by approximately 20°C from
the TSD trip point. The device resumes the power supply when the soft-start circuit is used upon recovery from
the TSD state.
Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured
that the TSD circuit will not be activated during normal operation of the system.
TSD Detection threshold: T
SD
Recovery from TSD
Hysteresis: ΔT
SD
T
j
0
Switching operation starts
Soft start
V
OUT
GND
Switching operation stops
Figure 5 Thermal Shutdown Operation
Usage Precautions
•
The input voltage, output voltage, output current and temperature conditions should be considered when
selecting capacitors and inductors. These components should be evaluated on an actual system prototype for best
selection.
•
•
External components such as capacitors and inductor should be placed as close to the TB7101F as possible.
The TB7101F has an ESD diode between the EN and V pins. The voltage between these pins should satisfy
IN
V
EN
− V < 0.3 V.
IN
•
•
Operation might become unstable due to board layout. In that case, add a decoupling capacitor (C ) of 0.1 μF to
C
1μF between the SGND and V pins.
IN
The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor
overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately
cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product
exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly
and/or damage Product permanently even before the protection circuit starts to operate.
•
The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor
overheating of brief duration. When the overheating protective function in the Product activates, immediately
correct the overheating situation. Improper usage of Product, such as the application of heat to Product
exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly
and/or damage Product permanently even before the protection circuit starts to operate.
12
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Typical Performance Characteristics
I
– V
I
– T
j
IN
IN
IN
0.8
1.0
0.8
0.6
0.4
0.2
0
V
V
= 2.7 V
IN
= V
= 2.7 V
FB
EN
TB7101F(T5L1.2,F)
0.6
0.4
0.2
0
V
= V
= V
FB IN
EN
T = 25°C
j
TB7101F(T5L1.2,F)
0
2
4
6
-50
-25
0
25
50
75
100
125
Input voltage,
V
IN
(V)
Junction temperature, Tj (°C)
I
– T
j
V
, V
– T
IN
IH(EN) IL(EN) j
3
1.0
0.8
0.6
0.4
0.2
0
V
V
= 5 V
= V
V
= 2.7 V
IN
IN
= 5 V
TB7101F(T5L1.2,F)
EN
FB
TB7101F(T5L1.2,F)
2
1
0
V
IH(EN)
V
IL(EN)
-50
-25
0
25
75
100
125
-50
-25
0
25
50
75
100
125
50
Junction temperature, Tj (°C)
Junction temperature, Tj (°C)
V
, V
– T
I
– V
IN
IH(EN) IL(EN)
j
IH(EN)
V
5
4
3
2
1
0
20
16
12
8
= 5.5 V , Tj = 25°C
V
= 5.5 V
IN
IN
TB7101F(T5L1.2,F)
TB7101F(T5L1.2,F)
V
V
IH(EN)
IL(EN)
4
0
-50
-25
0
25
50
75
100
125
0
1
2
3
4
5
6
Junction temperature, Tj (°C)
EN input voltage,
V
EN
(V)
13
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
I
– T
V
, V – T
UV UVR j
IH(EN)
j
20
16
12
8
2.6
V
= 5 V , V
IN
TB7101F(T5L1.2,F)
= 5 V
EN
Recovery voltage V
UVR
2.5
2.4
2.3
Detection voltage V
UV
4
V
= V
IN
EN
TB7101F(T5L1.2,F)
0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Junction temperature, Tj (°C)
Junction temperature, Tj (°C)
V
– V
f – V
ocs IN
OUT
V
IN
2.0
1.5
1
1.2
1.1
= V
T = 25°C
j
T = 25°C
j
EN
IN,
TB7101F(T5L1.2,F)
TB7101F(T5L1.2,F)
1
0.5
0
0.9
0.8
2.3
2.4
2.5
2.6
2.7
2
3
4
5
6
2.2
Input voltage,
V
IN
(V)
Input voltage,
V
IN
(V)
f
– T
j
ocs
1.2
1.1
1
V
= 5V
IN
TB7101F(T5L1.2,F)
0.9
0.8
-50
-25
0
25
50
75
100
125
Junction temperature, Tj (°C)
14
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
ΔV
– I
OUT
ΔV
– I
OUT OUT
OUT
30
20
10
0
20
15
10
5
V
= 5V , Ta = 25°C
IN
V
= 5V , Ta = 25°C
IN
L = 3.3 μH , C
OUT
TB7101F (T5L2.5, F)
= 10 μF
L = 3.3 μH , C
OUT
TB7101F (T5L3.3, F)
= 10 μF
0
-5
-10
-20
-30
-10
-15
-20
0
0.2
0.4
0.6
0.8
1
0
0
0
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
Output current,
I
(A)
OUT
OUT
ΔV
– I
OUT
OUT
ΔV
– I
OUT
OUT
20
15
10
5
20
15
10
5
V
= 3.3V , Ta = 25°C
IN
V
= 5V , Ta = 25°C
IN
L = 3.3 μH , C
OUT
TB7101F (T5L1.8, F)
= 10 μF
L = 3.3 μH , C
OUT
TB7101F (T5L1.8, F)
= 10 μF
0
0
-5
-5
-10
-15
-20
-10
-15
-20
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
出力電流
I
(A)
OUT
OUT
ΔV
– I
OUT
ΔV
– I
OUT
OUT
OUT
20
15
10
5
20
15
10
5
V
= 3.3V , Ta = 25°C
V
= 5V , Ta = 25°C
IN
IN
L = 3.3 μH , C = 22 μF
TB7101F (T5L1.5, F)
L = 3.3 μH , C = 22 μF
TB7101F (T5L1.5, F)
OUT
OUT
0
0
-5
-5
-10
-15
-20
-10
-15
-20
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
Output current,
I
(A)
OUT
OUT
15
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
ΔV
– I
OUT
ΔV
– I
OUT
OUT
OUT
20
15
10
5
20
15
10
V
= 3.3V , Ta = 25°C
V
= 5V , Ta = 25°C
IN
IN
L = 3.3 μH , C = 22 μF
TB7101F (T5L1.2, F)
L = 3.3 μH , C = 22 μF
TB7101F (T5L1.2, F)
OUT
OUT
5
0
0
-5
-5
-10
-15
-20
-10
-15
-20
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
Output current,
I
(A)
OUT
OUT
ΔV
– V
ΔV – I
OUT OUT
OUT
IN
20
15
10
30
I
= 0.2A , Ta = 25°C
OUT
I
= 0.2A , Ta = 25°C
OUT
L = 3.3 μH , C
OUT
TB7101F (T5L2.5, F)
= 10 μF
L = 3.3 μH , C
OUT
TB7101F (T5L3.3, F)
= 10 μF
20
10
0
5
0
-5
-10
-20
-30
-10
-15
-20
2
3
4
5
6
2
3
4
5
6
Input voltage,
V
IN
(V)
Input voltage,
V
IN
(V)
ΔV
– V
ΔV
– V
OUT IN
OUT
IN
20
15
10
20
15
10
I
= 0.2A , Ta = 25°C
OUT
I
= 0.2A , Ta = 25°C
OUT
L = 3.3 μH , C
OUT
TB7101F (T5L1.5, F)
= 22 μF
L = 3.3 μH , C
OUT
TB7101F (T5L1.8, F)
= 10 μF
5
5
0
0
-5
-5
-10
-15
-20
-10
-15
-20
2
3
4
5
6
2
3
4
5
6
Input voltage,
V
IN
(V)
Input voltage,
V
IN
(V)
16
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
ΔV
– V
η – I
OUT
OUT
IN
20
15
10
100
80
60
40
20
0
I
= 0.2A , Ta = 25°C
OUT
L = 3.3 μH , C
OUT
TB7101F (T5L1.2, F)
= 22 μF
5
0
-5
-10
-15
-20
V
= 5V , Ta = 25°C
IN
L = 3.3 μH , C = 10 μF
TB7101F (T5L3.3, F)
OUT
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
Input voltage,
V
IN
(V)
Output current,
I
(A)
OUT
η – I
η – I
OUT
OUT
100
80
100
80
60
40
60
40
V
= 3.3V , Ta = 25°C
V
= 5V , Ta = 25°C
IN
IN
20
0
20
0
L = 3.3 μH , C = 10 μF
TB7101F (T5L1.8, F)
L = 3.3 μH , C = 10 μF
TB7101F (T5L2.5, F)
OUT
OUT
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
Output current,
I
(A)
OUT
OUT
η – I
η – I
OUT
OUT
100
100
80
80
60
60
40
40
V
= 3.3V , Ta = 25°C
IN
20
V
= 5V , Ta = 25°C
IN
20
0
L = 3.3 μH , C
OUT
TB7101F (T5L1.5, F)
= 22 μF
L = 3.3 μH , C
OUT
TB7101F (T5L1.8, F)
= 10 μF
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
Output current,
I
(A)
OUT
OUT
17
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
η – I
η – I
OUT
OUT
100
100
80
80
60
40
20
60
40
20
V
= 3.3V, Ta = 25°C
IN
V
= 5V , Ta = 25°C
IN
L = 3.3 μH , C = 22 μF
TB7101F (T5L1.2, F)
OUT
L = 3.3 μH , C = 22 μF
TB7101F (T5L1.5, F)
OUT
0
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Output current,
I
(A)
Output current,
I
(A)
OUT
OUT
η – I
Load Response
OUT
100
80
Output voltage
(200 mV/Div)
V
OUT
60
40
20
0
Output current: I
OUT
(10 mA→800 mA→10 mA)
:
V
= 5V , Ta = 25°C
IN
V
= 3.3 V , Ta = 25°C
IN
L = 3.3 μH , C
OUT
TB7101F (T5L1.2, F)
= 22 μF
L = 3.3 μH, C = 22 μF
TB7101F (T5L1.2, F)
OUT
0
0.2
0.4
0.6
I
0.8
1
Output current,
(A)
40 μs/div
OUT
18
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Board Layout Example
Component side silk
Solder side silk
Component side pattern
Solder side pattern
19
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
TP1
TP3
TP4
IC1
V
P3
OUT
L1
V
1
2
8
7
6
5
IN
PGND
L
x
C1
P1
V
V
FB
IN
C2
1
2
P4
3
4
EN
N.C.
N.C.
GND
SGND
P2
JP1
GND
3
TP2
Figure 6 Circuit of the Board Layout Example
External Component Examples
Label
IC1
C1
Vendor
Part Number
TB7101F(T5L*.*,F)
GRM21BB30J106K
GRM21BB30J106K
NP04SB3R3N
Toshiba Corporation
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
Taiyo Yuden Co., Ltd.
C2
L1
20
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Package Dimensions
Weight: 0.017 g (typ.)
21
2008-04-09
TB7101F(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
22
2008-04-09
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