TIM1213-5 [TOSHIBA]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET型号: | TIM1213-5 |
厂家: | TOSHIBA |
描述: | MICROWAVE POWER GaAs FET |
文件: | 总2页 (文件大小:88K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1213-5
TECHNICAL DATA
PRELIMINARY
FEATURES
n
n
HIGH POWERT
n
n
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
P1dB=37.0dBm at 12.7GHz to 13.2GHz
HIGH GAIN
G1dB=7.0dB at 12.7GHz to 13.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
¾
P1dB
dBm
37.0 37.5
VDS= 9V
¾
G1dB
dB
6.0
7.0
f= 12.7 to 13.2GHz
Compression Point
Drain Current
¾
¾
¾
IDS1
A
2.0
25
¾
2.5
¾
hadd
D
Tch
Power Added Efficiency
Channel Temperature Rise
%
°
C
VDS X IDS X Rth(c-c)
80
ELECTRICAL CHARACTERISTICS ( Ta= 25° C )
CHARACTERISTICS
SYMBOL
CONDITION
VDS= 3V
IDS= 2.4A
VDS= 3V
IDS= 72mA
VDS= 3V
VGS= 0V
UNIT MIN. TYP. MAX.
¾
-2.0
¾
¾
Transconductance
gm
mS
1400
-3.5
5.0
¾
Pinch-off Voltage
VGSoff
IDSS
V
-5.0
5.7
¾
Saturated Drain Current
A
m
Gate-Source Breakdown
Voltage
VGSO
IGS= -72 A
V
-5
°
¾
Thermal Resistance
Rth(c-c) Channel to Case
C/W
3.0
3.7
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002
TIM1213-5
ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C )
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
UNIT
RATING
VDS
VGS
IDS
V
V
15
Gate-Source Voltage
Drain Current
-5
5.7
A
°
Total Power Dissipation (Tc= 25 C)
PT
W
30
°
°
Channel Temperature
Tch
Tstg
C
C
175
Storage Temperature
-65 to +175
PACKAGE OUTLINE (2-9D1B)
4-R2.4
•
•
‚
Gate
Source
Drain
‚
‚
ƒ
ƒ
0.5±0.15
13.0
±0.3
17.0 MAX
8.5 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260 C.
°
2
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