TLP130(TPL,F) [TOSHIBA]
Optocoupler AC-IN 1-CH Transistor With Base DC-OUT 5-Pin MFSOP T/R;
| 型号： | TLP130(TPL,F) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler AC-IN 1-CH Transistor With Base DC-OUT 5-Pin MFSOP T/R |
| 文件： | 总9页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP130
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP130
Programmable Controllers
Unit in mm
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP130 is a small outline coupler,
suitable for surface mount assembly.
TLP130 consists of a photo transistor, optically coupled to two gallium
arsenide infrared emitting diode connected inverse parallel, and operate
directly by AC input current.
•
•
Collector−emitter voltage: 80V(min.)
Current transfer ratio: 50%(min.)
Rank GB: 100%(min.)
•
•
•
Isolation voltage: 3750Vrms(min.)
UL recognized: UL1577, file no.E67349
Current transfer ratio
TOSHIBA
11−4C2
Current Transfer Ratio
Classi−
fication
Marking Of
Classification
Weight: 0.09 g (typ.)
I
= 5mA, V = 5V, Ta = 25°C
F
CE
Min.
50
Max.
600
Standard
Rank GB
Blank, Y, GR, GB
GB,GR
100
600
Pin Configurations (top view)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP130(GB): TLP130
1
6
5
4
3
1 : Anode, Cathode
3 : Cathode, Anode
4 : Emitter
5 : Collector
6 : Base
1
2007-10-01
TLP130
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
−0.7
1
mA
F(RMS)
Forward current derating (Ta≥53°C)
Peak forward current (100μs pulse,100pps)
Junction temperature
ΔI / °C
mA / °C
F
I
A
°C
V
FP
T
j
125
80
80
7
Collector−emitter voltage
Collector−base voltage
V
V
V
CEO
CBO
ECO
V
Emitter−collector voltage
V
Emitter−base voltage
V
7
V
EBO
Collector current
I
50
mA
mA
C
Peak collector current (10ms pulse,100pps)
I
100
CP
Power dissipation
P
150
−1.5
mW
mW / °C
°C
C
Power dissipation derating (Ta≥25°C)
Junction temperature
ΔP / °C
C
T
125
j
Storage temperature range
T
−55~125
−55~100
260
°C
stg
opr
Operating temperature range
T
°C
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta≥25°C)
Isolation voltage (AC, 1min., RH ≤ 60%)
T
°C
sol
P
200
mW
T
ΔP / °C
−2.0
mW / °C
Vrms
T
(Note 1)
BV
3750
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Symbol
Min.
Typ.
Max.
Unit
V
―
―
5
16
1
48
25
10
85
V
CC
Forward current
I
mA
mA
°C
F(RMS)
Collector current
I
―
C
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP130
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= ±10mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
1.15
60
1.3
V
F
Capacitance
C
V = 0, f = 1MHz
―
―
pF
T
Collector−emitter
breakdown voltage
V
V
I
I
= 0.5mA
= 0.1mA
80
7
―
―
―
―
V
V
(BR)CEO
(BR)ECO
C
E
Emitter−collector
breakdown voltage
V
V
I
I
= 0.1mA
= 0.1mA
80
7
―
―
10
2
―
―
V
V
Collector−base breakdown voltage
Emitter−base breakdown voltage
(BR)CBO
C
E
(BR)EBO
V
V
V
= 48V
―
―
100
50
nA
μA
CE
CE
CE
Collector dark current
Collector dark current
I
CEO
= 48V, Ta = 85°C
= 48V, Ta = 85°C
I
―
0.5
10
μA
CER
R
= 1MΩ
BE
CB
CE
Collector dark current
I
V
V
= 10V
―
―
―
0.1
400
10
―
―
―
nA
―
CBO
DC forward current gain
Capacitance collector to emitter
h
= 5V, I = 0.5mA
C
FE
CE
C
V = 0 , f = 1MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
%
I
I
= ±5mA, V
= ±1mA, V
= ±5mA, V
= 5V
50
100
―
―
―
60
―
10
―
0.2
―
1
600
600
―
F
F
CE
CE
CB
Current transfer ratio
I
/ I
F
C
Rank GB
= 0.4V
Rank GB
= 5V
Saturated CTR
I
/ I
F(sat)
%
C
30
―
―
Base photo−current
I
I
I
I
―
μA
PB
F
= 2.4mA, I = ±8mA
F
―
0.4
―
C
C
Collector-emitter
saturation voltage
V
V
= 0.2mA, I = ±1mA
F
―
CE(sat)
Rank GB
= ±0.7mA, V = 48V
CE
―
0.4
10
Off−state collector current
I
I
―
μA
C(off)
F
I (I = −5mA) / I (I = 5mA)
C
F
C F
CTR symmetry
I
0.33
―
3
―
C(ratio)
(Note 2)
I
(I = I
V
= 5V)
= 5V)
C2 F F2, CE
(Note 2) I
C(ratio) =
I
(I = I
V
C1 F F1, CE
IF1
IC1
IC2
VCE
IF2
3
2007-10-01
TLP130
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance input to output
Isolation resistance
C
R
V =0, f=1MHz
―
5×1010
3750
―
0.8
1014
―
―
―
―
―
pF
S
S
V =500V
S
Ω
S
AC, 1minute
―
Vrms
Vdc
Isolation voltage
BV
S
AC, 1second, in oil
DC, 1 minute, in oil
10000
10000
―
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
Fall time
t
―
―
―
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
―
―
―
r
t
f
V
= 10V, I = 2mA
C
CC
R = 100Ω
μs
L
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn-off time
Turn−on time
Storage time
Turn-off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ
R
V
(Fig.1)
L
BE
CC
= OPEN
μs
μs
t
S
25
40
2
= 5 V, I = ±16mA
F
t
OFF
t
ON
R = 1.9kΩ
R
V
(Fig.1)
L
BE
CC
= 220kΩ
t
S
20
30
= 5 V, I = ±16mA
F
t
OFF
Fig. 1 Switching time test circuit
IF
VCC
VCE
IF
ts
RL
VCC
VCE
4.5V
0.5V
RBE
tON
tOFF
4
2007-10-01
TLP130
I
– Ta
P – Ta
C
F
100
80
200
160
120
60
40
20
0
80
40
0
100
120
−20
100
120
40
60
80
40
60
80
0
20
0
20
−20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I
F
– V
F
FP
R
100
3000
1000
Ta = 25°C
Pulse width ≤ 100μs
50
30
Ta = 25°C
500
300
10
5
3
100
50
30
1
0.5
0.3
10
3
100
3
2
1
10−
3
10−
3
10−
3
0.1
0.6
Duty cycle ratio
D
R
1.6
1.8
1.2
1.4
F
0.8
1.0
Forward voltage
V
(V)
ΔV / ΔTa – I
I
– V
FP
F
F
FP
−3.2
−2.8
1000
500
300
−2.4
−2.0
−1.6
100
50
30
10
−1.2
−0.8
−0.4
Pulse width ≤ 10μs
Repetitive
5
3
Frequency = 100Hz
Ta = 25°C
1
0.6
0.1
0.3 0.5
1
3
5
10
30 50
2.2
2.6
3.0
1.8
1.0
1.4
Forward current
I
(mA)
F
Pulse forward voltage
V
(V)
FP
5
2007-10-01
TLP130
I
C
– V
CE
I – V
C CE
50
40
30
30
20
Ta = 25°C
Ta = 25°C
I
= 50mA
F
50mA
30mA
20mA
15mA
40mA
30mA
20mA
10mA
10mA
P
C(MAX)
20
10
I
= 5mA
10
0
5mA
2mA
F
0
0
6
8
10
2
4
0
0.6
0.8
1.0
0.2
0.4
Collector–emitter voltage
V
CE
(V)
Collector–emitter voltage
V
CE
(V)
I
C
– I
F
I
C
/ I – I
F
F
1000
100
50
Ta = 25°C
V
V
V
= 10V
= 5V
Ta = 25°C
CE
CE
CE
30
= 0.4V
500
300
10
Sample A
Sample A
5
3
Sample B
100
1
V
= 10V
= 5V
CE
CE
CE
Sample B
0.5
0.3
V
V
= 0.4V
50
30
0.1
0.3 0.5
1
3
5
10
30 50
100
0.3 0.5
1
3
5
10
30 50
100
Forward current
I
F
(mA)
Forward current
I
(mA)
F
I
– I at R
F BE
I – I
PB F
C
100
300
100
Ta = 25°C
Ta = 25°C
50
30
V
= 5V
CE
I
V
CB
F
30
10
V
V
= 0V
= 5V
CB
CB
A
5
3
10
3
V
CC
I
F
A
1
1
0.5
0.3
50kΩ
= ∞ 500kΩ 100kΩ
0.3
0.1
R
BE
0.1
0.1
0.3 0.5
1
3
5
30 50 100
0.1
0.3 0.5
1
3
5
10
30 50 100
10
Forward current
I
(mA)
Forward current
I
(mA)
F
F
6
2007-10-01
TLP130
I
– Ta
V
– Ta
CEO
CE(sat)
101
0.24
0.20
0.16
I
I
= 5mA
= 1mA
F
c
100
V
= 48V
CE
0.12
0.08
24V
10V
5V
1
10−
0.04
0
2
3
4
10−
10−
10−
80
100
20
40
60
−20
0
−40
Ambient temperature Ta (℃)
100
120
60
80
0
20
40
Ambient temperature Ta (°C)
I
– Ta
Switching Time – R
L
C
I
100
V
= 5V
Ta = 25°C
CE
300
100
I
= 16mA
F
50
30
F = 25mA
10mA
V
= 5V
CC
R
BE
= 220kΩ
5mA
10
50
30
t
OFF
5
3
t
s
10
1mA
1
5
3
0.5
0.3
0.5mA
t
ON
0.1
1
1
100
3
5
10
30
50
100
40
60
80
0
20
-20
Load resistance
R
L
(kΩ)
Ambient temperature Ta (℃)
7
2007-10-01
TLP130
Switching Time – R
Switching Time – R
L
BE
1000
1000
Ta = 25°C
Ta = 25°C
I
= 16mA
= 5V
I
= 16mA
V = 5V
CC
F
F
500
300
V
500
300
CC
R
= 1.9kΩ
L
t
OFF
100
100
t
OFF
t
s
50
30
50
30
t
s
10
10
5
3
5
3
t
ON
t
ON
1
100k
1
1
∞
50
100
1M
3M
10
30
300k
3
5
Base-emitter resistance
R
BE
(Ω)
Load resistance
R
L
(kΩ)
8
2007-10-01
TLP130
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
•
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
9
2007-10-01
相关型号：
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TOSHIBA
TLP131(GB-TPL)
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SO-5
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