TLP180(ABB-TPL,F,T [TOSHIBA]
Optocoupler - Transistor Output, 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, MINIFLAT, 11-4C1, SOP-6/4;
| 型号： | TLP180(ABB-TPL,F,T |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, MINIFLAT, 11-4C1, SOP-6/4 输入元件 输出元件 光电 |
| 文件： | 总8页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP180
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP180
Programmable Controllers
Unit in mm
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler,
suitable for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
·
·
Collector−emitter voltage: 80 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
·
·
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577, file No. E67349
TOSHIBA
11−4C1
Weight: 0.09 g
Pin Configuration (top view)
1
3
6
4
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
1
2002-09-25
TLP180
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
±50
-0.7
±1
mA
mA / °C
A
F(RMS)
Forward current detating (Ta≥53°C)
Pulse forward current
∆I / °C
F
(Note1)
I
FP
Junction temperature
T
125
°C
j
Collector-emitter voltage
Emitter-collector voltage
Collector current
V
V
80
V
CEO
ECO
7
V
I
50
mA
C
Power dissipation
P
150
mW
mW / °C
°C
C
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
∆P / °C
-1.5
125
C
T
j
Storage temperature range
Operating temperature range
Lead soldering temperature(10s)
Total package power dissipation
T
-55~125
-55~100
260
°C
stg
opr
T
°C
T
°C
sol
P
200
mW
mW / °C
Vrms
T
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC,1min.,R.H. ≤ 60%) (Note 2)
∆P / °C
-2.0
3750
T
BV
S
Note 1: Pulse width ≤ 100µs,f=100Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
48
20
10
85
V
CC
I
mA
mA
°C
F(RMS)
IC
―
Operating temperature
T
-25
―
opr
2
2002-09-25
TLP180
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
C
I = ±10 mA
1.0
1.15
60
1.3
V
F
F
Capacitance
V = 0, f = 1 MHz
―
―
pF
T
Collector-emitter
V
V
I
= 0.5 mA
80
7
―
―
―
V
V
(BR) CEO
(BR) ECO
C
breakdown voltage
Emitter-collector
I
= 0.1 mA
―
E
breakdown voltage
V
V
= 48 V (ambient light
CE
CE
0.01
(2)
0.1
below 1000Lx)
―
µA
(10)
(Note3)
Collector dark current
I
CEO
= 48 V (ambient light
2
50
Ta = 85°C
below 1000Lx)
―
―
µA
pF
(4)
(50)
(Note3)
Capacitance
C
CE
V = 0, f = 1 MHz
10
―
(collector to emitter)
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
/ I
Test Condition
MIn.
Typ.
Max.
Unit
%
50
100
—
—
—
60
—
—
0.2
—
1
600
600
—
I
= ±5 mA, V = 5 V
CE
F
I
C
F
Rank GB
IF = ±1 mA, V = 0.4 V
CE
Saturated CTR
I
/ I
%
V
C
V
F (sat)
Rank GB
30
—
—
I
I
= 2.4 mA, I = ±8 mA
F
0.4
—
C
C
Collector-emitter
—
CE (sat)
= 0.2 mA, I = ±1 mA
F
saturation voltage
Rank GB
—
0.4
10
Off-state collector current
I
V
= ± 0.7V, V = 48 V
—
µA
—
C(off)
F
CE
I
(I = -5mA) / I (I = 5mA)
C
F
C
F
CTR symmetry
I
0.33
1
3
C (ratio)
(Note4)
I
I
(I =I ,V
(I =I ,V
C1 F F1 CE
= 5V)
= 5V)
C2 F F2 CE
Note 4 : I (ratio)=
C
I
I
C1
C2
I
I
F1
F2
V
CE
3
2002-09-25
TLP180
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0V, f = 1 MHz
Min.
Typ.
Max.
Unit
Capacitance input to output
Isolation resistance
C
R
V
V
―
5×1010
3750
―
0.8
1014
―
―
―
―
―
pF
S
S
S
= 500 V, R.H. ≤ 60%
Ω
S
AC, 1 minute
―
V
rms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
V
dc
Swiching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
µs
Rise time
t
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
r
Fall time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
L
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ
(Fig.1)
L
CC
µs
t
25
40
s
V
= 5 V, I = ±16 mA
F
t
OFF
Fig. 1: Switching time test circuit
I
F
I
F
V
V
CC
t
S
R
L
V
CC
4.5V
V
t
CE
CE
0.5V
t
ON
OFF
4
2002-09-25
TLP180
I
– Ta
P
– Ta
C
F
100
200
80
60
40
160
120
80
20
0
40
0
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I – V
F F
FP
R
3000
1000
100
Pulse width ≤ 100µs
Ta = 25°C
10
1
500
300
100
0.1
0.01
50
30
10
3
3
2
−1
0
-
-
25
°C
10
3
10
3
10
D
3
10
85°C
0.4
-25°C
Duty cycle ratio
0.001
R
0
0.8
1.2
1.6
2
Forward voltage
V
(V)
F
25
°C
∆V ∆Ta – I
I
– V
FP FP
F /
F
-3.2
-2.8
1000
500
300
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
100
50
30
10
Pulse width ≤ 10µs
Repetitive
frequency = 100Hz
Ta = 25°C
5
3
1
0.1
0.3 0.5
1
3
5
10
(mA)
30 50
0.6
1.0
1.4
1.8
2.2
2.6
3.0
Forward current
I
F
Pulse forward voltage
V
(V)
FP
5
2002-09-25
TLP180
I
– V
CE
I
– V
CE
C
C
50
40
30
20
10
Ta = 25°C
Ta = 25°C
30
20
P (MAX.)
C
I
= 5mA
F
10
0
0
0
0.2
0.4
0.6
0.8
0
2
4
6
8
10
1.0
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– Ta
I
– I
F
CEO
C
1
0
10
Ta = 25°C
100
50
30
10
10
Sample A
5
3
1
-
10
V
CE
= 48V
Sample B
1
24V
10V
0.5
0.3
V
V
V
= 10V
= 5V
= 0.4V
CE
CE
CE
2
-
10
0.1
0.1
0.3 0.5
1
3
5
10
(mA)
30 50
Forward current
I
F
3
4
-
10
10
-
0
20
40
60
80
100
Ambient temperature Ta (°C)
I
/ I – I
F F
C
1000
Ta = 25°C
Sample A
500
300
100
Sample B
50
30
V
V
V
= 10V
= 5V
= 0.4V
CE
CE
CE
10
0.1
0.3 0.5
1
3
5
10
(mA)
30 50
Forward current
I
F
6
2002-09-25
TLP180
V
– Ta
I
– Ta
CE(sat)
C
0.24
0.20
100
I
I
= 1mA
= 0.2mA
V
CE
= 5V
F
C
50
30
I
25mA
F =
0.16
0.12
0.08
I
= 5mA, I = 1mA
C
F
10
I
= 1mA, I = 0.2mA
5
3
F
C
0.04
0
1mA
1
-40
-20
0
20
40
60
80
100
0.5
0.3
Ambient temperature Ta (°C)
0.1
-20
0
20
40
60
80
100
Switching Time – R
L
Ambient temperature Ta (°C)
1000
Ta = 25°C
= 16mA
I
F
V
CC
= 5V
500
300
Switching Time – Ta
160
t
OFF
50
30
t
OFF
100
t
s
50
30
t
s
10
5
3
t
ON
10
1
5
3
0.5
0.3
I
= 16mA
= 5V
F
t
ON
V
CC
RL = 1.9kΩ
1
1
0.1
-20
0
20
40
60 80
100
3
5
10
30
50
100
Ambient temperature Ta (°C)
Load resistance
R
(kΩ)
L
7
2002-09-25
TLP180
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
8
2002-09-25
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