TLP2601(LF1,F) [TOSHIBA]

Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 10 Mbps, LEAD FREE, DIP-8;
TLP2601(LF1,F)
型号: TLP2601(LF1,F)
厂家: TOSHIBA    TOSHIBA
描述:

Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 10 Mbps, LEAD FREE, DIP-8

输出元件 光电
文件: 总9页 (文件大小:300K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP2601  
TOSHIBA Photocoupler GaAAs Ired & PhotoIC  
TLP2601  
Isolated Line Receiver  
Unit: mm  
Simplex / Multiplex Data Transmission  
ComputerPeripheral Interface  
Microprocessor System Interface  
Digital Isolation for A/D, D/A Conversion  
Direct Replacement for HCPL2601  
The TOSHIBA TLP2601 a photocoupler which combines a GaAAs IRed  
as the emitter and an integrated high gain, high speed photodetector.  
The output of the detector circuit is an open collector, Schottky clamped  
transistor.  
A Faraday shield integrated on the photodetector chip reduces the effects  
of capacitive coupling between the input LED emitter and the high gain  
stages of the detector. This provides an effective common mode transient  
immunity of 1000V/μs.  
Input current thresholds: I = 5mA (max)  
F
TOSHIBA  
1110C4  
Isolation voltage: 2500Vrms (min)  
Weight: 0.54 g (typ.)  
Switching speed: 10MBd  
Common mode transient immunity: 1000V/μs (min)  
Guaranteed performance over temp.: 0°C to 70°C  
UL Recognized: UL1577, file No. E67349  
cUL approved :CSA Component Acceptance Service  
No. 5A, File No.E67349  
Pin Configuration (top view)  
1
2
8
7
Truth Table (positive logic)  
3
4
6
5
Input  
Enable  
Output  
SHIELD  
H
L
H
H
L
L
H
H
H
Schematic  
H
L
I
I
CC  
F
V
V
2
CC  
L
I
O
8
+
-
V
F
O
.
6
3
GND  
SHIELD  
5
I
E
7
V
E
A 0.01 to 0.1μF bypass capacitor must be  
connected between pins 8 and 5 (see Note 1)  
Start of commercial production  
1985-01  
1
2017-07-10  
TLP2601  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min  
Typ.  
Max  
Unit  
Input current, low level  
Input current, high level  
Supply voltage**, output  
High level enable voltage  
Low level enable voltage  
I
0
6.3 (*)  
4.5  
2.0  
0
250  
20  
μA  
mA  
V
FL  
I
FH  
V
V
5.5  
CC  
EH  
V
V
CC  
V
0.8  
8
V
EL  
Fan out (TTL load)  
N
Operating temperature  
T
0
70  
°C  
opr  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.  
Initial input current threshold value is 5.0 mA or less.  
**This item denotes operating ranges, not meaning of recommended operating conditions.  
Absolute Maximum Ratings (no derating required)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
20  
5
mA  
V
F
Reverse voltage  
V
P
R
D
Diode power dissipation  
100  
-1.8  
mW  
Diode power dissipation derating  
(Ta 70°C)  
P /°C  
mW/°C  
D
Junction Temperature  
Tj  
125  
25  
°C  
Output current  
I
mA  
O
Output voltage  
V
0.5 to 7  
V
V
O
Supply voltage  
V
7
CC  
(1 minute maximum)  
Enable input voltage  
V
5.5  
V
E
(not to exceed V  
by more than 500mV)  
CC  
Output power dissipation  
Output Power dissipation derating  
(Ta 70°C)  
P
40  
mW  
C
ΔP / °C  
-0.7  
mW / °C  
C
Junction Temperature  
Tj  
125  
°C  
Operating temperature range  
Storage Temperature range  
Lead Solder Temperature (10 s)  
Topr  
40 to 85  
55 to 125  
260  
°C  
°C  
T
stg  
sol  
T
°C  
2500  
Vrms  
Isolation voltage  
BV  
S
(R.H.60%, AC 1minute)  
(Note 10)  
3540  
V
dc  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(**) 1.6mm below seating plane.  
2
2017-07-10  
TLP2601  
Electrical Characteristics (Ta = 0°C to 70°C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
1
Max  
Unit  
V
= 5.5V, V = 5.5V  
O
CC  
High level output current  
I
250  
0.6  
μA  
OH  
I
= 250μA, V = 2.0V  
F
E
V
V
= 5.5V, I = 5mA  
F
CC  
Low level output voltage  
V
0.4  
V
OL  
= 2.0V, I (sinking) = 13mA  
OL  
E
High level supply current  
Low level supply current  
Low level enable current  
High level enable current  
High level enable voltage  
Low level enable voltage  
Input forward voltage  
I
V
V
V
V
= 5.5V, I = 0A, V = 0.5V  
2.0  
7
12  
15  
19  
mA  
mA  
mA  
mA  
CCH  
CC  
F
E
I
= 5.5V, I = 10mA, V = 0.5V  
CCL  
CC  
CC  
CC  
F
E
I
= 5.5V, V = 0.5V  
1.6  
1  
2.0  
EL  
E
I
= 5.5V, V = 2.0V  
E
EH  
V
(Note 11)  
EH  
V
V
0.8  
1.75  
EL  
V
I
I
= 10mA, Ta = 25°C  
1.65  
V
V
F
F
Input reverse breakdown  
voltage  
BV  
= 10μA, Ta = 25°C  
5
45  
R
R
Input capacitance  
C
IN  
V
= 0 V, f = 1MHz  
F
pF  
Input diode temperature  
coefficient  
ΔV /ΔT  
I = 10mA  
F
2.0  
mV / °C  
F
A
Relative humidity = 45%  
Ta=25°C, t = 5 second  
Inputoutput insulation  
I
1
μA  
IO  
leakage current  
V
= 3000Vdc,  
(Note 10)  
IO  
V
= 500V, R.H.60%  
IO  
10  
14  
Resistance (inputoutput)  
Capacitance (inputoutput)  
R
C
5×10  
Ω
IO  
10  
(Note 10)  
(Note 10)  
f = 1MHz  
0.6  
pF  
IO  
(**) All typ.values are at VCC = 5V, Ta = 25°C.  
3
2017-07-10  
TLP2601  
Switching Characteristics (Ta = 25°C, V = 5 V)  
CC  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
60  
Max  
75  
Unit  
ns  
Propagation delay time to  
high output level  
t
t
pLH  
pHL  
R = 350Ω, C = 15pF  
L
L
Propagation delay time to  
low output level  
I
= 7.5mA  
F
60  
75  
ns  
1
(Note 2), (Note 3),  
(Note 4)&(Note 5)  
Output rise time (1090%)  
Output fall time (9010%)  
t
30  
30  
ns  
ns  
r
t
f
R = 350Ω, C = 15pF  
L
L
Propagation delay time of  
t
t
25  
25  
ns  
ns  
ELH  
EHL  
I
= 7.5mA  
F
enable from V  
to V  
EL  
EH  
2
V
V
= 3.0V  
= 0.5V  
EH  
EL  
Propagation delay time of  
enable from V to V  
EL  
EH  
(Note 6) & (Note 7)  
V
= 400V  
CM  
Common mode transient  
R = 350Ω  
L
CM  
1000 10000  
V/μs  
V/μs  
H
immunity at high output level  
V
= 2V  
O(min)  
I
F
= 0mA,  
(Note 9)  
(Note 8)  
3
V
= 400V  
CM  
Common mode transient  
R = 350Ω  
L
CM  
1000 10000  
L
immunity at low output level  
V
= 0.8V  
O(max)  
I
F
= 7.5mA,  
4
2017-07-10  
TLP2601  
Test Circuit 1.  
5V  
t
and t  
pLH  
pHL  
Pulse  
1
2
3
4
8
7
6
5
V
CC  
generator  
I
I
= 7.5mA  
F
F
R
V
L
Z
O
= 50Ω  
Input I  
F
= 3.75mA  
t = 5ns  
r
O
t
pHL  
(*)  
I
V
V
F
OH  
OL  
t
pLH  
C
L
Output  
monitoring  
node  
Monitoring  
node  
Output V  
O
GND  
1.5V  
(*) C is approximately 15pF which includes probe and stray wiring capacitance.  
L
Test Circuit 2.  
Input V  
E
monitoring node  
t
and t  
EHL  
ELH  
Pulse  
generator  
5V  
Z
O
= 50 Ω  
t = 5ns  
r
1
2
3
4
8
V
CC  
3.0V  
1.5V  
R
7.5mA  
dc  
L
7
6
5
Input V  
E
V
O
t
EHL  
I
F
(*)  
V
V
OH  
OL  
t
ELH  
C
L
Output  
monitoring  
node  
Output V  
O
GND  
1.5V  
(*) C is approximately 15pF which includes probe and stray wiring capacitance.  
L
Test Circuit 3.  
Transient Immunity and Typical Waveforms.  
1
8
V
5V  
CC  
400V  
0V  
I
F
10%  
90%  
2
7
6
5
R
L
10%  
90%  
V
A
CM  
3
V
O
t
t
f
r
B
4
GND  
5V  
V
V
O
O
Switch at A: I = 0mA  
V
FF  
Pulse gen.  
F
V
CM  
Z
O
= 50 Ω  
V
OL  
Switch at B: I = 5mA  
F
5
2017-07-10  
TLP2601  
I
– V  
F
V / Ta – I  
F
F
F
100  
10  
1
-2.6  
-2.4  
-2.2  
-2.0  
-1.8  
-1.6  
-1.4  
Ta = 25°C  
0.1  
1
0.1  
0.3  
3
10  
30  
0.01  
1.0  
1.2  
1.4  
1.8  
1.6  
Forward current  
I
F
(mA)  
Forward voltage  
V
(V)  
F
I
Ta  
V
– I  
F
OH  
O
100  
8
6
4
2
0
V
= 5V  
CC  
I
= 250μA  
F
Ta = 25°C  
50  
30  
V
V
= 5.5V  
CC  
= 5.5V  
O
R =350Ω  
L
1kΩ  
4kΩ  
10  
5
3
2
0
3
4
6
1
5
1
Forward current  
I
F
(mA)  
0
10  
20  
30  
40  
50  
60  
70  
Ambient temperature Ta (°C)  
V
– I  
V
– T  
OL a  
O
F
8
6
4
2
0
I
= 5mA  
F
V
= 5V  
CC  
V
V
= 5.5V  
0.5  
0.4  
0.3  
CC  
R =350Ω  
L
= 2V  
E
R =4kΩ  
L
I
=16mA  
OL  
Ta = 70°C  
0°C  
12.8mA  
9.6mA  
6.4mA  
0
1
2
3
4
6
5
0.2  
Forward current  
I
F
(mA)  
80  
0
20  
40  
60  
Ambient temperature Ta (°C)  
6
2017-07-10  
TLP2601  
t
t
– I  
t
t
Ta  
pHL, pLH  
F
pHL, pLH  
120  
120  
100  
R = 4kΩ  
L
t
t
pLH  
R =4kΩ  
L
t
pLH  
100  
80  
350Ω  
1kΩ  
pLH  
1kΩ  
t
pLH  
80  
60  
40  
20  
350Ω  
350Ω  
350Ω  
t
pLH  
t
pHL  
60  
1kΩ  
4kΩ  
t
1kΩ  
4kΩ  
pHL  
40  
T
= 25°C  
a
20  
V
= 5 V  
CC  
V
= 5V  
CC  
17  
I
= 7.5mA  
60  
F
0
9
5
11  
13  
15  
19  
7
0
10  
20  
30  
0
40  
50  
70  
Forward current  
I
F
(mA)  
Ambient temperature Ta (°C)  
t
t
Ta  
t t Ta  
r, f  
EHL, ELH  
320  
300  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 5V  
CC  
V
V
= 5V  
= 3V  
CC  
I
= 7.5mA  
F
EH  
R = 4kΩ  
L
t
R = 4kΩ  
ELH  
L
I
= 7.5mA  
F
t
f
f
280  
80  
1kΩ  
t
60  
40  
20  
0
350Ω  
350Ω  
t
f
1kΩ  
350Ω  
350Ω  
t
ELH  
t
r
t
ELH  
1kΩ  
4kΩ  
20  
10  
30  
40  
50  
60  
70  
0
t
EHL  
1kΩ  
4kΩ  
Ambient temperature Ta (°C)  
10  
20  
30  
40  
50  
60  
0
70  
Ambient temperature Ta (°C)  
7
2017-07-10  
TLP2601  
Notes  
1. The V  
supply voltage to each TLP2601 isolator must be bypassed by a 0.1μF capacitor of larger.This can be  
CC  
either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as  
close as possible to the package V and GND pins of each device.  
CC  
2.  
3.  
t
Propagation delay is measured from the 3.75mA level on the low to high transition of the input  
current pulse to the 1.5V level on the high to low transition of the output voltage pulse.  
pHL  
pLH  
t
Propagation delay is measured from the 3.75mA level on the high to low transition of the input  
current pulse to the 1.5V level on the low to high transition of the output voltage pulse.  
4.  
5.  
6.  
t
t
t
Fall time is measured from the 10% to 90% levels of the high to low transition on the output pulse.  
Rise time is measured from the 90% to 10% levels of the low to high transition on the output pulse.  
f
r
Enable input propagation delay is measured from the 1.5V level on the low to high transition of  
the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse.  
EHL  
7.  
t
Enable input propagation delay is measured from the 1.5V level on the high to low transition of  
the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse.  
ELH  
8. CM  
9. CM  
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain  
L
in the low output state (i.e. V  
< 0.8V).  
OUT  
Measured in volts per microsecond (V / μs).  
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain  
H
in the high state (i.e. V  
> 2.0V).  
OUT  
Measured in volts per microsecond (V / μs).  
Volts/microsecond can be translated to sinusoidal voltages:  
(dv  
)
CM  
V / μs =  
= f  
V
(p.p.)  
CM CM  
dt  
Max.  
Example:  
= 318V when f  
V
= 1MHz using CM and CM = 1000V / μs data sheet specified  
L H  
CM  
pp  
CM  
minimum.  
10.  
Device considered a twoterminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8  
shorted together.  
11. Enable  
input  
No pull up resistor required as the device has an internal pull up resistor.  
8
2017-07-10  
TLP2601  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.  
Hardware, software and systems described in this document are collectively referred to as “Product”.  
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,  
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all  
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for  
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for  
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product  
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or  
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,  
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for  
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH  
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without  
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for  
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,  
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE  
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your  
TOSHIBA sales representative.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.  
Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,  
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology  
products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export  
laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export  
Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in  
compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES  
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
9
2017-07-10  

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TLP260J(TPR)

PHOTOCOUPLER PHOTO-TRIAC 4SOP
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TLP260J(TPR,F)

暂无描述
TOSHIBA

TLP260J(V4)

Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, 11-4C1, MINIFLAT-4/6
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