TLP2601(TP1) [TOSHIBA]
Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 10 Mbps, DIP-8;
| 型号： | TLP2601(TP1) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 10 Mbps, DIP-8 输出元件 光电 |
| 文件： | 总9页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP2601
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP2601
Isolated Line Receiver
Unit in mm
Simplex / Multiplex Data Transmission
Computer−Peripheral Interface
Microprocessor System Interface
Digital Isolation For A/D, D/A Conversion
Direct Replacement For HCPL−2601
The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed
as the emitter and an integrated high gain, high speed photodetector.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V/µs.
TOSHIBA
Weight: 0.54g
11−10C4
·
·
·
·
·
·
Input current thresholds: I = 5mA max.
F
Isolation voltage: 2500Vrms min.
Switching speed: 10MBd
Common mode transient immunity: 1000V/µs min.
Guaranteed performance over temp.: 0°C~70°C
UL Recognized: UL1577, file No. E67349
Pin Configuration (top view)
1
2
8
7
Truth Table
(positive logic)
3
4
6
5
Input
Enable
Output
SHIELD
H
L
H
H
L
L
H
H
H
Schematic
H
L
I
I
CC
F
L
V
V
2
CC
I
O
8
+
-
A 0.01 to 0.1µF bypass capacitor must be
connected between pins 8 and 5 (see Note 1).
V
F
3
O
6
GND
SHIELD
5
I
E
7
V
E
1
2002-09-25
TLP2601
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, low level
Input current, high level
Supply voltage, output
High level enable voltage
Low level enable voltage
I
0
6.3 (*)
4.5
2.0
0
¾
¾
¾
¾
¾
250
20
µA
mA
V
FL
I
FH
V
V
5.5
CC
EH
V
V
CC
V
0.8
8
V
EL
Fan out (TTL load)
N
¾
¾
¾
¾
Operating temperature
T
0
70
°C
opr
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
Maximum Ratings (no derating required)
Characteristic
Forward current
Symbol
Rating
Unit
I
20
5
mA
V
F
Reverse voltage
V
R
Output current
I
25
mA
V
O
Output voltage
V
-0.5~7
O
Supply voltage
V
7
V
V
CC
(1 minute maximum)
Enable input voltage
V
5.5
E
(not to exceed V
by more than 500mV)
CC
Output collector power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage
P
40
-40~85
-55~125
260
mW
°C
o
T
opr
T
T
°C
stg
(**)
°C
sol
2500
Vrms
BV
S
(R.H.≤ 60%,AC 1min.,
(Note 10)
3540
V
dc
(**) 1.6mm below seating plane.
2
2002-09-25
TLP2601
Electrical Characteristics (Ta = 0°C ~70°C unless otherwise noted)
Characteristic
Symbol
Test Condition
= 5.5V, V = 5.5V
Min.
Typ.
1
Max.
Unit
V
CC
O
High level output current
I
¾
250
mA
OH
I
= 250mA, V = 2.0V
E
F
V
V
= 5.5V, I = 5mA
F
CC
Low level output voltage
High level supply current
V
¾
¾
0.4
7
0.6
15
V
OL
= 2.0V, I (sinking) = 13mA
E
OL
I
V
= 5.5V, I = 0, V = 0.5V
mA
CCH
CC
F
E
V
V
= 5.5V, I = 10mA
F
CC
Low level supply current
I
¾
12
19
mA
CCL
= 0.5V
E
Low level enable current
High level enable current
I
V
V
= 5.5V, V = 0.5V
E
¾
¾
-1.6
-1
-2.0
mA
mA
EL
CC
CC
I
= 5.5V, V = 2.0V
E
¾
EH
High level enable voltage
V
(Note 11)
2.0
¾
¾
EH
V
Low level enable voltage
Input forward voltage
V
¾
¾
¾
¾
0.8
EL
V
I
I
= 10mA, Ta = 25℃
= 10mA, Ta = 25℃
1.65
1.75
V
V
F
F
Input reverse breakdown
voltage
BV
5
¾
45
¾
¾
¾
R
R
Input capacitance
C
V
= 0, f = 1MHz
F
¾
¾
pF
IN
Input diode temperature
coefficient
∆V /∆T
I = 10mA
F
-2.0
mV / °C
F
A
Relative humidity = 45%
Input-output insulation
I
Ta=25℃, t = 5 second
¾
¾
1
mA
I-O
leakage current
V
V
= 3000Vdc,
(Note 10)
I-O
= 500V, R.H.≤ 60%
Resistance (input-output)
Capacitance (input-output)
R
C
5×1010
¾
¾
W
1014
0.6
I-O
I-O
(Note 10)
f = 1MHz,
(Note 10)
¾
pF
I-O
(**)All typ.values are at VCC = 5V, Ta = 25°C.
3
2002-09-25
TLP2601
Switching Characteristics (Ta = 25℃, V = 5 V)
CC
Test
Characteristic
Symbol
Test Condition
Min.
Typ.
60
Max.
75
Unit
ns
Circuit
Propagation delay time to
high output level
t
t
―
pLH
pHL
R = 350Ω, C = 15pF
L
L
I
= 7.5mA
Propagation delay time to
low output level
F
1
―
60
75
ns
(Note 2), (Note 3),
(Note 4)&(Note 5)
Output rise time(10-90%)
Output fall time(90-10%)
Propagation delay time of
t
t
―
―
30
30
―
―
ns
ns
r
f
R = 350Ω, C = 15pF
L
L
t
t
―
―
25
―
―
ns
ELH
enable from V to V
I = 7.5mA
F
EH
EL
2
V
V
= 3.0V
= 0.5V
EH
EL
Propagation delay time of
enable from V to V
25
ns
EHL
EL
EH
(Note 6)&(Note 7)
V
= 400V
CM
Common mode transient
immunity at high output
level
R = 350Ω
L
CM
1000 10000
―
―
V/µs
V/µs
H
V
= 2V
O(min.)
I
= 0mA,
(Note 9)
(Note 8)
F
3
V
= 400V
CM
Common mode transient
immunity at low output
level
R = 350Ω
L
CM
-1000 -10000
L
V
= 0.8V
O(max.)
I
= 7.5mA,
F
4
2002-09-25
TLP2601
Test Circuit 1.
5V
t
and t
pLH
pHL
Pulse
1
2
3
4
8
7
6
5
V
CC
generator
I
I
= 7.5mA
= 3.75mA
F
F
R
L
Z
r
= 50W
O
Input I
F
t = 5ns
V
O
t
pHL
(*)
Output
monitor-
ing
I
V
V
F
OH
OL
t
pLH
C
L
Monitoring
Output V
O
GND
node
1.5V
node
(*) C is approximately 15pF which includes probe and stray wiring capacitance.
L
Test Circuit 2.
Input V
E
monitoring node
t
and t
EHL
ELH
Pulse
generator
5V
Z
= 50 W
O
t = 5ns
r
1
2
3
4
8
V
CC
3.0V
1.5V
R
7.5mA
dc
L
7
6
5
Input V
E
V
O
t
EHL
I
F
(*)
Output
monitor-
ing
V
V
OH
OL
t
ELH
C
L
Output V
O
GND
1.5V
node
(*) C is approximately 15pF which includes probe and stray wiring capacitance.
L
Test Circuit 3.
Transient Immunity and Typ. Waveforms.
1
8
V
5V
CC
400V
0V
I
F
10%
90%
2
7
6
5
R
L
10%
90%
t
f
V
A
CM
3
V
O
t
r
B
4
GND
V
5V
V
V
O
O
Switch at A : I = 0mA
V
FF
Pulse gen.
F
Z
= 50 W
CM
O
V
OL
Switch at B : I = 5mA
F
5
2002-09-25
TLP2601
I
– V
F
DV / DTa – I
F
F
F
100
10
1
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
Ta = 25°C
0.1
1
0.1
0.3
3
10
(mA)
30
0.01
1.0
1.2
1.4
1.6
(V)
1.8
Forward current
I
F
Forward voltage
V
F
I
– Ta
V
– I
F
OH
O
100
8
6
4
2
0
V
= 5V
CC
I
= 250mA
F
Ta = 25°C
50
30
V
CC
= 5.5V
V
O
= 5.5V
R =350W
L
1kW
10
4kW
5
3
0
2
1
3
4
6
5
1
Forward current
I
F
(mA)
0
10
20
30
40
50
60
70
Ambient temperature Ta (°C)
V
– I
V
– T
OL a
O
F
8
6
4
2
0
I
= 5mA
F
V
= 5V
CC
0.5
0.4
0.3
V
CC
= 5.5V
R =350W
L
V
E
= 2V
R =4kW
L
I
=16mA
OL
Ta = 70°C
0°C
12.8mA
9.6mA
6.4mA
0
1
2
3
4
6
5
0.2
Forward current
I
F
(mA)
80
0
20
Ambient temperature Ta (°C)
40
60
6
2002-09-25
TLP2601
t
t
– I
t
t
– Ta
pHL, pLH
F
pHL, pLH
120
120
100
R = 4kW
L
t
R =4kW
pLH
L
t
pLH
100
80
350W
1kW
t
pLH
1kW
t
80
60
40
20
pLH
350W
350W
350W
t
pLH
t
pHL
60
1kW
4kW
t
1kW
4kW
pHL
40
T
= 25°C
a
20
V
CC
= 5 V
V
= 5V
CC
17
I
= 7.5mA
60
F
0
9
5
11
13
15
19
7
0
10
20
30
0
40
50
70
Forward current
I
F
(mA)
Ambient temperature Ta (°C)
t
t
– Ta
t t – Ta
EHL, ELH
r, f
320
300
80
70
60
50
40
30
20
10
0
V
= 5V
= 7.5mA
CC
V
V
= 5V
= 3V
CC
I
F
EH
R = 4kW
L
t
R = 4kW
ELH
L
I = 7.5mA
F
t
f
f
280
80
1kW
t
60
40
20
0
350W
350W
t
f
1kW
350W
350W
t
ELH
t
r
t
ELH
1kW
4kW
20
Ambient temperature Ta (°C)
10
30
40
50
60
70
0
t
EHL
1kW
4kW
10
20
0
30
40
50
60
70
Ambient temperature Ta (°C)
7
2002-09-25
TLP2601
Notes
1. The V
supply voltage to each TLP2601 isolator must be bypassed by a 0.1µF capacitor of larger.This can be
CC
either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected
as close aspossible to the package V
CC
and GND pins of each device.
2.
3.
4.
5.
6.
7.
t
t
t
t
t
t
･
･
･
･
･
･
･
Propagation delay is measured from the 3.75mA level on the low to high transition of the input
current pulse to the 1.5V level on the high to low transition of the output voltage pulse.
pHL
pLH
f
Propagation delay is measured from the 3.75mA level on the high to low transition of the input
current pulse to the 1.5V level on the low to high transition of the output voltage pulse.
Fall time is measured from the 10% to the 90% levels of the high to low transition on the output
pulse.
Rise time is measured from the 90% to 10% levels of the low to high transition on the output
pulse.
r
Enable input propagation delay is measured from the 1.5V level on the low to high transition of
the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse.
EHL
ELH
Enable input propagation delay is measured from the 1.5V level on the high to low transition of
the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse.
8. CM
9. CM
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
L
in the low output state (i.e., V
< 0.8V).
OUT
Measured in volts per microsecond (V / µs).
･
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
H
in the high state (i.e., V
> 2.0V).
OUT
Measured in volts per microsecond(V / µs).
Volts/microsecond can be translated to sinusoidal voltages:
(dv
)
CM
V / µs =
= f (p.p.)
V
CM CM
dt
Max.
Example:
= 318V when f
V
= 1MHz using CM and CM = 1000V / µs data sheet specified
L H
CM
pp
CM
minimum.
10.
･
･
Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and
8 shorted together.
11. Enable
input
No pull up resistor required as the device has an internal pull up resistor.
8
2002-09-25
TLP2601
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
9
2002-09-25
相关型号：
TLP260J(V4)
Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, 11-4C1, MINIFLAT-4/6
TOSHIBA
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