TLP2630_07 [TOSHIBA]
Analog Data Equipment Control; 模拟数据设备控制
| 型号： | TLP2630_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Analog Data Equipment Control |
| 文件： | 总8页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP2630
TOSHIBA Photocoupler GaAℓAs Ired & Photo IC
TLP2630
Digital Logic Isolation
Tele−Communication
Unit in mm
Analog Data Equipment Control
Microprocessor System Interface
The TOSHIBA TLP2630 dual photocoupler consists of a
pair of GaAℓAs light emitting diode and integrated high
gain, high speed photodetector.
The output of the detector circuit is an open collector,
schottky clamped transistor.This unit is 8−lead DIP.
•
•
•
•
•
•
Input current threshold: I = 5mA(max.)
F
LSTTL/TTL compatible: 5V supply
Switching speed: 10MBd(typ.)
Guaranteed performance over temperature: 0~70°C
Isolation voltage: 2500V
(min.)
rms
UL recognized:UL1577, file no. E67349
TOSHIBA
11−10C4
Weight: 0.54 g
Pin Configuration (top view)
1: Anode 1
V
1
2
3
4
CC
8
7
6
5
2: Cathode 1
3: Cathode 2
4: Anode 2
5: GND
6: V (output 2)
O2
GND
7: V (output 1)
O1
8: V
CC
Truth Table
(positive logic)
Schematic
Input
Output
I
I
F1
CC
8
7
1
V
V
CC
+
I
H
L
L
O1
V
F1
O1
2
4
H
-
I
I
O2
F2
6
5
A 0.01 to 0.1μF bypass capacitor must
connected between pins 8 and 5 (see Note 1).
V
O2
+
V
F2
3
-
GND
1
2007-10-01
TLP2630
Absolute Maximum Ratings (no derating required up to 70°C)
Characteristic
Symbol
Rating
20
Unit
mA
mA
Forward current(each channel)
I
F
Pulse forward current
(each channel)*
I
30
FP
Reverse voltage(each channel)
Output current(each channel)
Output voltage(each channel)
V
5
V
mA
V
R
I
16
O
V
−0.5~7
O
Supply voltage
(1 minute maximum)
V
7
V
CC
Output collector power
dissipation(each channel)
P
40
mW
O
Operating temperature range
Storage temperature range
T
−55~125
−40~85
°C
°C
stg
opr
T
Lead soldering temperature (10 s)
T
sol
260
°C
(Note 1)
Isolation voltage
BV
2500
Vrms
S
(AC, 1 min., R.H.≤ 60%, Note 3)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* t ≤ 1 msec duration.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, low level, each channel
Input current, high level, each channel
Supply voltage**, output
I
0
6.3*
4.5
⎯
⎯
⎯
5
250
15
5.5
8
μA
mA
V
FL
I
FH
V
CC
Fan out(TTL load, each channel)
Operating temperature
N
⎯
⎯
T
0
70
°C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
* 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
2
2007-10-01
TLP2630
Electrical Characteristics (Ta = 0~70°C, unless otherwise noted)
Characteristic
Input forward voltage
Symbol
Test Condition
Min.
⎯
⎯
5
Typ.*
1.65
−2.0
⎯
Max.
1.75
⎯
Unit
V
V
F
I
I
I
= 10mA, Ta = 25°C
= 10mA
F
F
R
(each channel)
Input diode temperature
coefficient(each channel)
Input reverse breakdown
voltage(each channel)
Input capacitance
ΔV / ΔTa
F
mV / °C
V
BV
R
⎯
= 10μA, Ta = 25°C
C
T
⎯
⎯
⎯
⎯
⎯
45
⎯
pF
V
V
= 0, f = 1MHz
F
(each channel)
High level output current
(each channel)
= 5.5V, V = 5.5V
O
= 250μA
CC
I
OH
1
250
0.6
30
μA
I
F
Low level output voltage
(each channel)
V
= 5.5V, I = 5mA
CC F
(sinking) = 13mA
OL
V
OL
0.4
14
V
I
High level supply current
(both channels)
I
CCH
mA
mA
V
= 5.5V, I = 0
F
CC
CC
Low level supply current
(both channels)
I
CCL
24
36
V
V
= 5.5V, I = 10mA
F
14
R
C
S
⎯
⎯
10
⎯
⎯
Ω
Isolation voltage
= 500V, R.H.≤ 60%
(Note 3)
(Note 3)
S
S
0.6
pF
Capacitance(input−output)
f = 1MHz
Input−input leakage
current
R.H.≤ 60%, t = 5s
I
I−I
⎯
0.005
⎯
μA
V
= 500V
(Note 6)
(Note 6)
I−I
I−I
11
R
C
I−I
⎯
⎯
10
⎯
⎯
Ω
Resistance(input−input)
Capacitance(input−input)
V
= 500V
I−I
0.25
pF
f = 1MHz
(Note 6)
*
All typical values are at V
= 5V, Ta = 25°C.
CC
3
2007-10-01
TLP2630
Switching Characteristics (Ta =25°C , V =5V)
CC
Test
Characteristic
Symbol
Cir−
Test Condition
Min. Typ. Max. Unit
cuit
Propagation delay time to
low output level
I = 0→7.5mA, R = 350Ω
F L
L
t
t
1
1
1
⎯
⎯
⎯
60
60
30
75
75
⎯
ns
ns
ns
pHL
pLH
C = 15pF (each channel)
Propagation delay time to
high output level
I = 7.5mA→0, R = 350Ω
F L
C = 15pF (each channel)
L
Output rise a time,output
fall time(10~90%)
I = 0 7.5mA, R = 350Ω
F L
C = 15pF (each channel)
L
t ,t
r f
I
= 0, R = 350Ω
L
= 200V
F
Common mode transient
immunity at high output
level
V
CM
V (min.) = 2V
CM
2
2
⎯
⎯
200
⎯
⎯
V / μs
V / μs
H
O
(each channel, Note 4)
I
= 7.5mA, R = 350Ω
F
L
Common mode transient
immunity at low output
level
V
= 200V
CM
V (max.) = 0.8V
CM
−500
L
O
(each channel, Note 5)
(Note 1) 2mm below seating plane.
(Note 2) The V supply voltage to each TLP2630 isolator must be bypassed by a 0.01μF capacitor or
CC
larger.This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic
and should be connected as close as possible to the package V and GND pins each device.
CC
(Note 3) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8
shorted together.
(Note 4) CM ･the maximum tolerable rate of rise of the common mode voltage to ensure the output will
H
remain in the high state(i.e., V
> 2.0V)
OUT
(Note 5) CM ･the maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
L
in the low output state(i.e., V
> 0.8V)
OUT
Measured in volts per microsecond(V / μs).
(Note 6) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
4
2007-10-01
TLP2630
Test Circuit 1. t
And t
pLH
pHL
5V
Pulse input
7.5mA
3.75mA
0mA
P
W
=10μs
V
CC
I
1
8
7
6
5
F
Duty cycle=1/10
R
350Ω
L
2
3
4
t
t
f
r
I
F
Monitor
5V
4.5V
C
L
V
GND
O
1.5V
pHL
1.5V
0.5V
V
t
t
OL
pLH
*
C is approximately 15pF which includes probe and stray
L
wirng capacitance.
Test Circuit 2. Transient Immunity And Typical Waveforms.
I
200V
0V
F
90%
V
CC
5V
1
2
3
4
8
7
6
5
V
CM
R
L
10%
350Ω
t
f
t
r
B
A
V
Monitor
O
C
L
V
FF
GND
5V
2V
V
O
(I = 0mA)
F
V
CM
+
-
0.8V
V
O
Pulse generator
50Ω
V
OL
Z
O=
(I = 7.5mA)
F
160(V)
160(V)
t (μs)
f
CM
=
,CM =
L
H
t (μs)
r
*
C is approximately 15pF which includes probe and stray
L
wirng capacitance.
5
2007-10-01
TLP2630
ΔV / ΔTa – I
F
F
I
F
– V
F
100
10
1
-2.6
-2.4
-2.2
-2.0
Ta = 25 °C
-1.8
-1.6
-1.4
0.1
0.01
1.0
1.2
1.4
1.6
1.8
2.0
0.1
0.3 0.5
1
3
30
10
50
5
Forward voltage
V
F
(V)
Forward current
I
(mA)
F
I
– Ta
OH
V
– I
F
O
100
8
6
4
2
0
V
= 5 V
I = 250 μA
F
CC
Ta = 25 °C
V
V
= 5.5 V
CC
50
30
= 5.5 V
O
R = 350Ω
L
1kΩ
4kΩ
10
5
3
0
2
1
3
4
6
5
1
Forward current
I
(mA)
F
10
30
40
60
0
20
50
70
Ambient temperature Ta (°C)
V
– I
F
V – Ta
OL
O
10
I
= 5 mA
F
V
= 5 V
CC
V
= 5.5 V
CC
0.5
0.4
R = 350Ω
L
8
6
4
R = 4kΩ
L
I
=16mA
OL
12.8mA
9.6mA
6.4mA
Ta= 70°C
0°C
0.3
0.2
2
0
20
80
0
40
60
Ambient temperature Ta (°C)
0
2
6
1
3
4
5
Forward current
I
(mA)
F
6
2007-10-01
TLP2630
t
t
– I
F
t
t
– Ta
pHL, pLH
pHL, pLH
120
120
100
R =4kΩ
L
R =4kΩ
t
t
L
pLH
t
pLH
100
80
350kΩ
1kΩ
1kΩ
pLH
t
80
60
pLH
350Ω
350Ω
t
pHL
60
350Ω
1kΩ
4kΩ
t
1kΩ
4kΩ
pHL
40
20
0
40
Ta = 25 °C
= 5 V
V
= 5 V
CC
V
CC
20
0
I
= 7.5 mA
F
9
5
11
13
15
17
19
7
10
20
30
0
40
50
60
70
Forward current
I
(mA)
F
Ambient temperature Ta (°C)
t t – Ta
r, f
320
300
V
= 5 V
CC
I
= 7.5 mA
F
R =4kΩ
L
t
t
f
280
80
1kΩ
f
60
40
350Ω
350Ω
t
f
t
r
20
0
1kΩ
4kΩ
10
20
30
0
40
50
60
70
Ambient temperature Ta (°C)
7
2007-10-01
TLP2630
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01
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