概述
数据手册TPC8004 概述
Silicon N Channel MOS Type (MOSVI) 硅N沟道MOS型（ MOSVI ）
TPC8004 数据手册
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PDF下载TPC8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8004
Lithium Ion Battery Applications
Unit: mm
Portable Equipment Applications
Notebook PC Applications
ꢀ Small footprint due to small and thin package
ꢀ Low drain−source ON resistance : R
= 37 mΩ (typ.)
DS (ON)
ꢀ High forward transfer admittance : |Y | = 6 S (typ.)
fs
= 10 µA (max) (V
ꢀ Low leakage current : I
= 30 V)
DSS
DS
ꢀ Enhancement−mode : V = 0.8~2.0 V (V
= 10 V, I = 1 mA)
th
DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
30
30
±20
5
V
V
V
DSS
V
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
DGR
GS
V
GSS
DC
(Note 1)
I
D
Drain current
A
JEDEC
JEITA
―
―
Pulse (Note 1)
I
20
DP
Drain power dissipation
Drain power dissipation
(t = 10 s)
(Note 2a)
P
2.4
1.0
W
W
D
D
TOSHIBA
2-6J1B
(t = 10 s)
(Note 2b)
P
Weight: 0.080 g (typ.)
Single pulse avalanche energy
(Note 3)
E
I
32.5
5
mJ
A
AS
Avalanche current
AR
Circuit Configuration
Repetitive avalanche energy
E
0.24
mJ
AR
(Note 2a) (Note 4)
T
150
°C
°C
Channel temperature
ch
T
−55 to 150
Storage temperature range
stg
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-02-06
TPC8004
Thermal Characteristics
Characteristics
Symbol
Max
52.1
125
Unit
°C/W
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
th (ch-a)
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
R
(t = 10 s)
(Note 2b)
Marking (Note 5)
TPC8004
Type
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: V
DD
= 24 V, T = 25°C (initial), L = 1.0 mH, R = 25 Ω, I = 5 A
ch AR
G
Note 4: Reptitve rating; pulse width limited by maximum channel temperature
Note 5: ● on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
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TPC8004
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
—
—
30
0.8
—
—
3
—
—
±10
10
—
µA
µA
V
GSS
GS
DS
DS
Drain cut−off current
I
= 30 V, V
= 0 V
DSS
(BR) DSS
GS
GS
Drain−source breakdown voltage
Gate threshold voltage
V
I
= 10 mA, V
= 0 V
—
D
V
V
V
V
V
= 10 V, I = 1 mA
—
2.0
80
50
—
V
th
DS
GS
GS
DS
D
= 4 V, I = 2.5 A
58
37
6
D
Drain−source ON resistance
R
mΩ
DS (ON)
= 10 V, I = 2.5 A
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 2.5 A
S
D
C
C
—
—
—
475
85
270
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
—
DS
rss
C
oss
—
Rise time
tr
—
—
—
10
16
13
—
—
—
Turn−on time
Switching time
t
on
Fall time
t
f
Turn−off time
t
—
—
70
16
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
≈ 24 V, V
= 10 V, I = 5 A
nC
DD
GS
D
Gate−source charge
Q
—
—
11
5
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
Pulse (Note 1)
I
—
—
—
—
—
20
A
V
DRP
current
Forward voltage (diode)
V
I
= 5 A, V
= 0 V
−1.2
DSF
DR
GS
3
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TPC8004
4
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TPC8004
5
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TPC8004
6
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TPC8004
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
7
2002-02-06
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