TPC8012-H_06 [TOSHIBA]
Switching Regulator Applications Switching Regulator Applications; 开关稳压器应用开关稳压器的应用
| 型号： | TPC8012-H_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching Regulator Applications Switching Regulator Applications |
| 文件： | 总7页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC8012-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
TPC8012-H
Switching Regulator Applications
Unit: mm
DC／DC Converter Applications
•
•
•
•
Low drain-source ON-resistance: R
= 0.28 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 1.35 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 200 V)
DSS
DS
Enhancement mode: V = 3.0 to 5.0 V (V
= 10 V, I = 1 mA)
DS D
th
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
V
200
200
±30
1.8
V
V
V
Drain-source voltage
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
DGR
GS
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
7.2
DP
Drain power dissipation
Drain power dissipation
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
JEDEC
JEITA
―
―
P
1.9
1.0
W
W
D
D
TOSHIBA
2-6J1B
P
Weight: 0.085 g (typ.)
Single-pulse avalanche energy
(Note 3)
E
2.05
1.8
mJ
A
AS
Avalanche current
I
AR
Circuit Configuration
Repetitive avalanche energy
E
0.19
mJ
AR
8
7
6
5
(Note 2a) (Note 4)
T
T
150
°C
°C
Channel temperature
ch
−55 to 150
Storage temperature range
stg
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
4
1
2006-01-17
TPC8012-H
Thermal Characteristics
Characteristic
Symbol
Max
65.8
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
R
125
°C/W
th (ch-a)
(t = 10 s)
(Note 2b)
Marking (Note 5)
TPC8012
H
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
V
DD
= 50 V, T = 25°C (initial), L = 1.0 mH, R = 25 Ω, I = 1.8 A
AR
ch
G
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2006-01-17
TPC8012-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±25 V, V
= 200 V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
V
GSS
GS
DS
DS
Drain cutoff current
I
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
200
3.0
⎯
⎯
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
5.0
0.40
⎯
V
th
DS
GS
DS
D
R
= 10 V, I = 0.9 A
0.28
1.35
440
80
Ω
DS (ON)
|Y |
D
= 10 V, I = 0.9 A
0.65
⎯
S
fs
D
C
C
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
260
⎯
oss
Rise time
t
⎯
⎯
⎯
⎯
⎯
23
28
22
73
11
⎯
⎯
⎯
⎯
⎯
r
I
= 0.9 A
D
10 V
V
GS
V
OUT
0 V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
∼
V
100 V
DD
Turn-off time
t
off
<
Duty 1%, t = 10 μs
w
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
I
160 V, V
= 10 V,
GS
DD
= 1.8 A
nC
Gate-source charge 1
Q
gs
⎯
⎯
6
5
⎯
⎯
D
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
7.2
A
V
DRP
V
I
= 1.8 A, V = 0 V
GS
−1.5
DSF
DR
3
2006-01-17
TPC8012-H
I
– V
I
– V
D DS
D
DS
5
4
3
2
1
0
5
4
3
2
1
0
Common source
Ta = 25°C
Common source
15
10
8
8
7.6
15
7.6
7.3
Ta = 25°C
10
Pulse test
Pulse test
7.3
7
7.0
6.6
6.6
6
6
V
= 5 V
GS
0
1
2
3
4
5
0
4
8
12
16
20
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
D
– V
GS
V
– V
GS
DS
1.0
0.8
6
Common source
= 10 V
Common source
Ta = 25°C
V
DS
Pulse test
Pulse test
5
4
0.6
0.4
ID = 1.8 A
3
2
1
0
Ta = −55°C
0.9
100
0.2
0
0.45
25
0
3
6
9
12
15
0
2
6
8
10
4
Gate-source voltage
V
(V)
Gate-source voltage
V
(V)
GS
GS
R
– I
D
DS (ON)
|Y | – I
fs
D
100
1
Common source
Ta = 25°C
Pulse test
Common source
= 10 V
V
DS
Pulse test
V
= 10 V
GS
10
25
0.1
Ta = −55°C
100
1
0.01
0.1
0.1
1
10
0.1
1
10
Drain current
I
(A)
Drain current
I
(A)
D
D
4
2006-01-17
TPC8012-H
R
– Ta
I
– V
DS
DS (ON)
DR
1
10
Common source
Ta = 25°C
Common source
Pulse test
Pulse test
0.8
0.6
0.4
I
= 2.8A,5.5A,11A
D
10
1
4.5
V
= 10 V
GS
3
1
0.2
0
V
= 0 V
GS
0.1
−80
−40
0
40
80
120
160
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
10000
1000
5.0
4.0
3.0
2.0
C
iss
C
oss
100
Common source
1.0
0
V
I
= 10 V
DS
C
rss
= 1 mA
D
Common source
Ta = 25°C
f = 1 MHz
Pulse test
−80
−40
0
40
80
120
160
V
= 0 V
GS
10
0.1
1
10
100
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Dynamic input/output
characteristics
P
– Ta
D
2.0
200
20
Common source
I
Ta = 25°C
Pulse test
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
= 1.8 A
D
(1)
V
DS
1.6
1.2
0.8
160
120
80
16
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
V
= 40 V
DD
12
8
80 V
(2)
160 V
0.4
0
40
4
0
0
0
40
80
120
160
0
4
8
12
16
20
Total gate charge
Q
g
(nC)
Ambient temperature Ta (°C)
5
2006-01-17
TPC8012-H
r − t
th
w
1000
100
10
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
(1)
1
Single - pulse
100 1000
0.1
0.001
0.01
0.1
1
10
Pulse width
t
(s)
w
Safe operating area
10
I
MAX (Pulse) *
D
t =1 ms *
10 ms *
1
0.1
V
DSS
MAX
* Single-pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
10
100
1000
Drain-source voltage
V
(V)
DS
6
2006-01-17
TPC8012-H
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2006-01-17
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