TPCP8203(TE85L,F)_技术文档

2009-9

PRODUCT GUIDE

MOSFETs

http://www.semicon.toshiba.co.jp/eng

S E M I C O N D U C T O R

C O N T E N T S

.......................................................................

1 Features and Structures

3

........

2

Toshiba’s MOSFET Product Lines and Part Numbering Schemes

2-1 MOSFET Product Lines

4

5

...................................................................................

................................................................................

2-2 Part Numbering Schemes

.............................

3 Selection Guide (By Absolute Maximum Ratings)

6

.................................

4 Low-VDSS MOSFETs (in Small SMD Packages)

16

.........................................................................................

4-1 Packaging Options

16

• SSM Series

• TPC Series

....................................................

4-2 Application Examples and Block Diagrams

• Cell Phone (Power Supply Circuit)

• Notebook PC (Power Supply Circuit)

17

• Lithium-Ion Secondary Battery (Battery Protection Circuits)

• Motor Driver (Power Driver Circuit)

.....................................................................

4-3 Low-V^DSSMOSFET Roadmaps

• Roadmap for Trench MOSFETs

• Package Options

19

21

Toshiba’s MOSFET devices

meet the needs of a wide range

of ultra-high-density applications.

.................................................................

4-4 Low-V^DSS, High-Speed MOSFETs

• Synchronous Rectification DC-DC Converters

– Block Diagram, Timing Chart and Power Loss Factors

–

Summary Results of Power Loss Simulation and Key Parameters for MOSFETs

Efficiency Improvement by Thermally Enhanced Package and New Process Technology

– MOSBD (MOSFET with SBD)

• High-Speed MOSFET Offerings

.........

4-5 Low-V^DSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection)

• Lithium-Ion Battery Protection Circuit Trend

• MOSFET Roadmap

26

28

• Low-ON-resistance N-Channel Power MOSFETs

• Low-ON-resistance P-Channel Power MOSFETs

....................................................................

4-6 Semi-Power MOSFET Offerings

• Semi-Power P-Channel Single MOSFETs

• Semi-Power N-Channel Single MOSFETs

• Semi-Power Dual MOSFETs

• MOSFET with a Schottky Barrier Diode

• VS-6 Series … [Part Number: TPC6xxx]

• VS-8 Series … [Part Number: TPCF8xxx]

• PS-8 Series … [Part Number: TPCP8xxx]

• Chip LGA Series ... [Part Number: TPCL4xxx]

• STP2 Series ... [Part Number: TPCT4xxx]

• TSON Advance Series … [Part Number: TPCC8xxx]

• TSSOP Advance Series … [Part Number: TPCM8xxx]

• SOP-8 Series … [Part Number: TPC8xxx]

• SOP Advance Series … [Part Number: TPCA8xxx]

• DPAK Series ... [Part Number: TKxxPxxxM1]

.......................................................

4-7 Standard MOSFET Series (I^D< 500 mA)

• Single MOSFETs

36

• Dual MOSFETs

.............................................................

5 Low-VDSS, High-Qg MOSFETs

37

.....................................................................................

5-1 TO-220SM(W) Series

37

38

39

.........................................................................

5-2 U-MOS (Trench Type) Series

............

5-3 U-MOS Series for Synchronous Rectification (V^DSS= 60 V to 150 V)

.............................................................40

6 Mid- and High-VDSS MOSFETs

.....................................................

6-1 π-MOSVII Series (VDSS = 450 V to 650 V)

6-2 Super-Junction DTMOS Series (V^DSS= 600 V, 650 V)

40

41

42

43

...................................

.......................................

6-3 High-speed π-MOS Series (V^DSS= 450 V to 600 V)

.................................................................................................

6-4 π-MOS Series

........................................................................

7 MOSFET Part Numbers

46

............................................................

7-1 Alphanumeric Index of Part Numbers

46

........................................................................

8 Product Obsolescence

53

......................................................................................

8-1 End-of-Life Products

53

.............................................................................................

9 Packaging

55

................................................................

9-1 Compact Surface-Mount Packages

55

.................................................................................

9-2 Through-Hole Packages

66

2

Features and Structures

1

1) No carrier storage effect; superior frequency and switching characteristics

2) Rugged and no current concentration

3) Voltage-controlled device, hence low drive power

4) Easy parallel connection

■ Toshiba MOSFETs have the following additional features:

1) Guaranteed avalanche capability................. Allows an absorber circuit to be simplified

2) Improved functioning of built-in diodes ........ Enhanced circuit design flexibility

3) High ruggedness .......................................... Increased margin for circuit design

4) High-speed switching ................................... Higher speed in end-product’s operation

5) Low R(DS)ON ...................................................

Reduced end-product’s power consumption

6) Smaller packages ......................................... Reduced end-product size

7) Low drive loss ............................................... Reduced end product’s power

■ Structures of Toshiba MOSFETs

Double-Diffusion Structure

Source

Gate

● π-MOS

Toshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which

produces high-withstand voltage, to form channels. This structure is especially well

suited to high-withstand voltage and high-current devices.

A high level of integration yields a high-performance Power MOSFET with low

ON-resistance and low power loss.

n⁺

P

n^–

n⁺

Drain

Trench Structure

Gate

Source

● U-MOS

n⁺

Higher channel density is achieved by connecting channels vertically to form a

U-groove at the gate region, a structure that yields a lower ON-resistance than

other MOSFET structures.

P

n^–

n⁺

Drain

Super-Junction Structure

Source

Gate

● DTMOS

n⁺

The super-junction structure, which has P-type pillar layers as shown left,

realizes high withstand voltage and ON-resistance lower than the conventional

theoretical limit of silicon.

P

n

n⁺

Drain

3

Toshiba’s MOSFET Product Lines and Part Numbering

2

2-1 MOSFET Product Lines

SSM Series (VDSS = 12 V to 60 V)

■ Applications

● Cell phones ● Notebook PCs

● Portable electronic devices ● Small-signal switching

Very compact and thin, the SSM Series is suitable for use in various electronic devices.

The SSM Series is available in a wide range of packages and features low voltage drive.

VS and PS Series (VDSS = 12 V to 40 V)

■ Applications

● Cell phones ● Notebook PCs

● Portable electronic devices

Very compact and thin, the VS and PS Series are suitable for use in various

electronic devices.

Chip LGA and STP Series (VDSS = 20 V to 30 V)

The LGA and STP Series are housed in an ultra-small and thin package and are

suitable for use in lithium-ion secondary battery protection circuits in various portable

electronic devices.

■ Applications

● Lithium-ion secondary battery protection circuits

SOP and TSON Series (VDSS = 20 V to 250 V)

■ Applications

● Lithium-ion secondary battery protection circuits

● Notebook PCs ● Portable electronic devices

● DC-DC converters

The SOP and TSON Series are compact and thin, and require only a small mounting area.

They are suitable for lithium-ion secondary battery protection circuits and notebook PCs.

TO-220SM(W) Series (VDSS = 40 V to 150 V)

■ Applications

● Motor drivers ● Switching power supplies

The TO-220SM package, which uses Cu connectors and a wide source terminal,

realizes low ON-resistance and a high current-carrying capability.

Low-VDSS, High-Qg U-MOS Series (VDSS = 40 V to 100 V)

■ Applications

● Motor drivers ● Solenoids and lamp drivers

High integration is achieved using a trench technology. Low-voltage drive (V^GS= 4 V)

is possible due to ultra-low ON-resistance.

U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)

■ Applications

● Switching power supplies ● AC adapters

● Motor drivers

Fabricated using a trench technology, the U-MOS Series is ideal for synchronous

rectification on the secondary side of power supply circuits.

New π-MOSVII Series (VDSS = 450 V to 650 V)

■ Applications

● Switching power supplies ● AC adapters

The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced

capacitances due to optimized chip design and is available with a greatly wider

range of electrical characteristics.

Super-Junction DTMOS Series (VDSS = 600, 650 V)

■ Applications

● Switching power supplies ● AC adapters

● Motor drivers

The super-junction DTMOS Series achieves low ON-resistance and low gate charge

(Qg) due to the use of the latest super-junction structure.

High-Speed π-MOS Series (VDSS = 450 V to 600 V)

■ Applications

● Inverters ● Switching power supplies

● Motor drivers ● AC adapters

The new High-Speed π-MOS Series achieves higher switching speed than the

well-proven π-MOS Series. Two series are available: high-speed switching series

and high-speed diode series.

4

Schemes

2-2 Part Numbering Schemes

■ Small-Signal MOSFET (SSM) Series

SSM 3 K 101 TU

Package

<3-pin>

<4-pin>

<6-pin>

Serial number of the products

F: S-Mini

FU: USM

FS: SSM

FV: VESM

T: TSM

CT: CST4

FU: US6

Polarity and internal configuration

K: N-channel, single

FE: ES6

TU: UF6

<5-pin>

F: SMV

CTD: CST6D

J: P-channel, single

N: N-channel, dual

FU: USV

FE: ESV

TU: UFV

TU: UFM

CT: CST3

CTB: CST3B

P: P-channel, dual

L: N-channel and P-channel (dual)

E: N-channel and P-channel

(pre-wired as a load switch)

H: N-channel and SBD

G:P-channel and SBD

Pin count

Small-Signal MOSFET

■ Multi-Pin Series

■ New Series

■ Conventional Series

✽ ✽ ✽ ✽

N-channel MOS

TPCM8 0 01 -H

TK 55 A 10 J 1

2SK

2SJ

H: High-speed type

Additional information

None: Low-ON-resistance type

1: Low-capacitance type

3: Low-ON-resistance type

5: Fast body diode type

Serial number of the products

✽ ✽ ✽ ✽

P-channel MOS

0: N-channel, single

4: N-channel and P-channel, dual

A: N-channel and SBD

1: P-channel, single

2: N-channel, dual

3: P-channel, dual

B: P-channel and SBD

Series

J: P-channel and NPN

C: π-MOSVI K: U-MOSIV

D: π-MOSVII T: DTMOSI

J: U-MOSIII

M: U-MOSVI

U: DTMOSII

TPC6: VS-6 Series

TPCF8: VS-8 Series

TPCP8: PS-8 Series

TPCC8: TSON Advance Series

TPCS8: TSSOP-8 Series

TPCM8: TSSOP Advance Series

TPC8: SOP-8 Series

Voltage: 10% of the VDSS

Package

A: TO-220SIS

D: TO-220(W)

F: TO-220SM(W)

J: TO-3P(N)

X: TFP

TPCA8: SOP Advance Series

TPCT4: STP Series

TPCL4: Chip LGA

P: DPAK

Q: New PW-Mold2

Current rating

TK: N-channel

TJ: P-channel

5

Low-VDSS MOSFETs (in Small SMD Packages)

4

4-1 Packaging Options

SSM Series

The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help reduce system size.

(SOT-723)

(SOT-323)(SC-70)

CST3

Chip-Scale Package, Transfer Molded, 3-Pin

CST3B

Chip-Scale Package, Transfer Molded, 3-Pin, B-Type

VESM

SSM ^{(SOT-416)(SC-75)}

Small Super-Mini

USM

Very Extreme Super-Mini

Ultra-Super-Mini

Typical product: SSM3K35CT

Typical product: SSM3J46CTB

Typical product: SSM3K35MFV

Typical product: SSM3K35FS

Typical product: SSM3K15FU

1

0.8

.25

0.8

Thickness:

0.38 typ.

Thickness:

1.2

Thickness:

1.2

Thickness:

0.7 typ.

Thickness:

2.0

1.0

1.6

0.8

0.48 typ.

0.5 typ.

0.9 typ.

0.6

0.8

1.3

0.45

1.0

0.35

1.2

2.1

0.25

0.15

0.22

0.2

0.3

Unit: mm

(SOT-346)(SC-59)

(SOT-553)

UFM

S-Mini

TSM

CST4

ESV

Ultra-super-Mini Flat lead

Super-Mini

Thin Super-Mini

Chip-Scale Package, Transfer Molded, 4-Pin

Extreme Super-mini, 5-pin

Typical product: SSM3J130TU

Typical product: SSM3K15F

Typical product: SSM3J304T

Typical product: SSM4K27CT

Typical product: SSM5N15FE

1.6

1.5

1.7

1.2

Thickness:

2.0

Thickness:

1.1 typ.

Thickness:

0.7 typ.

Thickness:

1.2

Thickness:

0.55 typ.

2.9

1.6

0.8

0.7 typ.

0.38 typ.

1.9

0.5

1.3

0.5

1.6

2.5

2.1

2.8

0.2

Unit: mm

0.2

Unit: mm

(SOT-563)

0.4

0.3

0.4

(SOT-353)(SC-88A)

(SOT-25)(SC-74A)

USV

UFV

SMV

CST6D

ES6

Ultra-Super-mini, 5-pin

Ultra-super-mini, Flat lead, 5-pin

Super-Mini, 5-pin

Typical product: SSM5H14F

1.6

Chip-Scale Package, Transfer Molded, 6-Pin, D-Type

Extreme Super-mini, 6-pin

Typical product: SSM5N15FU

Typical product: SSM5H12TU

Typical product: SSM6N37CTD

Typical product: SSM6N36FE

1.2

1.7

1.25

0.9

Thickness:

0.9 typ.

Thickness:

2.0

Thickness:

2.9

Thickness:

0.38 typ.

Thickness:

1.6

2.0

1.0

0.7 typ.

1.1 typ.

0.95

0.55 typ.

0.5

0.65

0.35

1.3

1.6

2.1

0.2

0.15

2.8

0.4

0.2

Unit: mm

0.3

(SOT-353)(SC-88A)

US6

UF6

Ultra Super mini Flat lead 6-pin

Typical product: SSM6J409TU

1.7

Ultra-Super-mini, 6-pin

Typical product: SSM6N15FU

1.25

Thickness:

0.9 typ.

2.0

Thickness:

0.7 typ.

2.0

2.1

0.65

2.1

0.2

Unit: mm

0.3

Unit: mm

TPC Series

The TPC Series comes in small, thin packages suitable for portable devices. The latest TSON Advance package allows the maximum permissible

power dissipation equivalent to SOP-8, but occupies 64% less board space.

STP2

Small Thin Package

Typical product:TPCT4204

3.4

VS-6

VS-8

Very Thin & Small, 8-pin

Typical product:TPCF8101

1.5

PS-8

Chip LGA

Land Grid Array

Very Thin & Small, 6-pin

Typical product:TPC6003

Progressive & Small 8-pin Series

Typical product:TPCP8402

Typical product:TPCL4201

2.4

1.6

1.59

2.9

2.8

Thickness:

0.8 typ.

Thickness:

0.8 typ.

Thickness:

0.25 typ.

Thickness:

0.65 typ.

2.9

φ0.3

1.59

0.75 typ.

0.95

0.65

1.9

3.8

2.8

0.65

0.3

Unit: mm

0.33

SOP-8

Typical product:TPC8035-H

TSON Advance

Typical product:TPCC8005-H

3.1

TSSOP-8

Typical product:TPCS8208

TSSOP Advance

Typical product:TPCM8001-H

SOP Advance

Typical product:TPCA8028-H

4.4

3.0

3.65

4.4

5.0

3.5

Thickness:

0.85 typ.

Thickness:

0.9 typ.

Thickness:

0.75 typ.

5.0

Thickness:

1.6 typ.

Thickness:

5.0

3.3

0.95 typ.

.27

1

1.27

0.8

6.4

0.65

6.0

3.3

4.65

0.4

0.3

0.25

0.4

0.25

Unit: mm

16

4-2 Application Examples and Block Diagrams

Cell Phone (Power Supply Circuit)

Load switches

P-ch: SSM3J130TU

P-ch: SSM3J409TU

P-ch: SSM3J120TU

P-ch: SSM6J51TU

P-ch: SSM3J46CTB

Power supply

Battery charger

USB charging

PA

Control IC

IC

BB-IC

Power management switches

P-ch: SSM3J114TU

Li-ion battery

CCD camera

module

P-ch: SSM3J115TU

DC-DC converters

HS: SSM5G10TU

(P-ch + Schottky Barrier Diode)

LS: SSM5H12TU

(N-ch + Schottky Barrier Diode)

Notebook PC (Power Supply Circuit)

DC-DC converters

HS: TPCA8030-H

LS: TPCA8036-H

LS: TPCA8028-H

LS: TPCA8A04-H

CPU

V-Core

Load switches

Power management switches

Adapter

HS: TPCA8030-H

LS: TPCA8036-H

LS: TPCA8028-H

LS: TPCA8A04-H

P-ch: TPC6111 / TPCF8104

N-ch: TPC6011 / TPCF8002

P-ch: SSM3J117T / SSM3J321T

N-ch: SSM3K315T / SSM3K7002F

P-ch: TPC8121 / 8118 / 8123

Input

N-ch: TPC8030 / 8028

VGA

DDR

19 V

HS: TPC8037-H

LS: TPC8037-H

TPC8A03-H

LDO

Charger

HS: TPCP8005-H

LS: TPCP8005-H

Dual: TPC8216-H

HS: TPC8037-H

LS: TPC8037-H

3.3 V/5 V

1.8V

CMS16

HS: TPC8037-H

LS: TPC8037-H

Battery 1

Battery 2

HS: TPC8037-H

LS: TPC8037-H

1.5 V

HS: TPC8037-H

LS: TPC8037-H

1.05 V

17

Low-VDSS MOSFETs (in Small SMD Packages)

4

4-2 Application Examples and Block Diagrams

Lithium-Ion Secondary Battery (Battery Protection Circuits)

Notebook PCs

Cell Phones

(Example using P-channel MOSFETs)

P+

P-

P+

Microcontroller

Dual N-ch MOSFET

• STP2 Series

• PS-8 (dual)

Single P-ch MOSFET x 2

• SOP Advance

• SOP-8

• Chip LGA

• TSON Advance

Single N-ch MOSFET x 2

• SOP Advance

• SOP-8

• TSON Advance

Motor Driver (Power Driver Circuit)

Motors

M

Pre-driver

Protection

circuit

P/N-ch complementary MOSFET

• VS Series (dual)

• PS Series (dual)

• SOP Series (dual)

18

4-3 Low-VDSS MOSFET Roadmaps

Roadmap for Trench MOSFETs

■ High-Speed, Low-VDSS U-MOS

■ Low-Ron Trench MOSFETs

30

N-ch, V^DSS= 30 V

25

20

15

10

5

U-MOSIV

U-MOSIII

Pch

Nch

U-MOSV

U-MOSIV

10

U-MOSVI

3

1

0

2005

2006

2007

2008

2009

2010

1

5

10

R^DS(ON)(mΩ)

Package Options

100

SOP Advance

TSSOP Advance

TSON Advance

SOP-8

PS-8

10

VS-8

UF6

VS-6

TSM

UFM

Chip LGA

ES6

STP2 STP

TSSOP-8

S-Mini

SMV

CST3B

UFV

US6

1

VESM

SSM

USM

CST4

CST6D

CST3

ESV

USV

0.1

1

10

100

Footprint Area (mm²)

19

Low-VDSS MOSFETs (in Small SMD Packages)

4

■ Ultra-Small Packages

S-Mini

USM

SSM

VESM

CST3

US6

USV

ESV

CST6D

1.6 mm

2.5 mm

1.2 mm

0.6 mm

0.9 mm

2.1 mm

0.2 mm

0.4 mm

0.2 mm

0.425 mm

0.5 mm

Footprint

7.3 mm²

Area

4.2 mm²

0.2 W

2.6 mm²

0.1 W

1.4 mm²

0.15 W

0.6 mm²

0.1 W

4.2 mm²

0.2 W

4.2 mm²

0.2 W

2.6 mm²

0.15 W

0.9 mm²

0.14 W

Permissible Power

0.2 W

Dissipation

(Note)

Height

(MAX)

1.4 mm

1.1 mm

0.9 mm

0.55 mm

0.4 mm

1.1 mm

0.6 mm

0.4 mm

Note: Mounted on FR4 Boad (25.4 x 25.4 mm)

■ Thermally-Enhanced Compact Packages

SMV

TSM

UF6

UFV

UFM

ES6

CST3B

CST4

2.8 mm

1.6 mm

0.8 mm

2.1 mm

0.2 mm

2.6 mm²

0.5 W

0.2 mm

4.2 mm²

0.5 W

0.2 mm

4.2 mm²

0.5 W

0.6 mm

Footprint

Area

8.1 mm²

0.7 W

4.2 mm²

0.5 W

1.0 mm²

1.0 W

1.0 mm²

0.4 W

8.1 mm²

0.75 W

Permissible Power

Dissipation

(Note)

Height

(MAX)

0.85 mm

0.75 mm

1.4 mm

0.75 mm

0.6 mm

0.5 mm

0.4 mm

Note: Mounted on FR4 Boad (25.4 x 25.4 mm)

■ Thermally Enhanced Packages

■ Compact Packages

VS-8

SOP Adv.

SOP-8

TSSOP Adv. TSON Adv.

VS-6

PS-8

Chip LGA

1.59 mm

2.9 mm

0.65 mm

0.95 mm

0.65 mm

3.3 mm

3.5 mm

5 mm

Footprint

Area

16.3 mm²10.9 mm²

Footprint

Area

5.5 mm²

(–32%)

2.56 mm²

(–68%)

30 mm²

8.1 mm²

2.2 W

8.1 mm²

(−46%)

(−64%)

2.8 W

(+47%)

2.3 W

(+21%)

Permissible Power

Dissipation

Permissible Power

Dissipation

2.5 W

(+14%)

1.68 W

(–24%)

1.9 W

—

1.0 mm

(–47%)

0.8 mm

(–58%)

0.9 mm

(–53%)

0.25 mm

(–71%)

1.9 mm

Height

0.85 mm

(Percentage relative to SOP-8)

(Percentage relative to VS-6)

20

4-4 Low-VDSS, High-Speed MOSFETs

Synchronous Rectification DC-DC Converters – Block Diagram,Timing Chart and Power Loss Factors

■ Block Diagram

■ Timing Chart

Control IC-side

(switch and high-side)

Synchronous-side

(low-side)

T

MOSFETs

MOSFET

ton(High)

L

D

S

Vin

Vout

G

VGS(High)

V^GS(Low)

D

Load

Control

IC

ton(Low)

C

Vcc

G

S

High-side MOSFET: Turn-off loss

V^DS(High)

I^DS(High)

High-side MOSFET: Conducting loss

High-side MOSFET: Turn-on loss

I^DS(Low)

Low-side MOSFET: Self-turn-on loss

I^SBD(SBD)

V^DS

(Low+SBD)

Dead time: Diode loss

Low-side MOSFET: Conducting loss

Dead time 1

Dead time 2

Synchronous Rectification DC-DC Converters – Summary Results of Power Loss Simulation and Key Parameters for MOSFETs

8.00

Key Parameters to Improve Efficiency

Efficiency

82.49%

Conditions

7.00

6.00

5.00

4.00

3.00

2.00

1.00

0.00

• Input Voltage: 19 V

• Output Voltage: 1.5 V

• Frequency: 1 MHz

Synchronous-side MOSFET

Very low R^{DS (ON)}

Reduction of the self-turn-on losses

Low Qrr

Others (drive loss, etc.)

Conducting loss

Low Cgd, Cgd/Cgs

Low rg

Dead time loss (off)

Optimized Vth

Efficiency

85.13%

Self-turn-on loss

Shoot-through current control

Low Qg

Dead time loss (on)

Efficiency

83.20%

Turn-on loss

Switch-side MOSFET

Conducting loss

Turn-on loss

High-speed switching

Low Qsw

Low rg

Low RDS (ON)

5

10

20

Output Current (A)

21

Low-VDSS MOSFETs (in Small SMD Packages)

4

Synchronous Rectification DC-DC Converters – Efficiency Improvement by Thermally Enhanced Package and New Process Technology

■ Thermally Enhanced Package

Toshiba has developed the SOP Advance package with the same footprint area as the standard SOP-8 package. With an external

heatsink on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and

thus high-current capability.

Unit: mm

SOP-8

SOP Advance

5.0

SOP-8

30

SOP Advance

Features of the SOP Advance

(mm²)

Same footprint area as the SOP-8

Low profile, Thinner by 0.9 mm

High power dissipation

Footprint Area

30

1.0

44.6

40

(mm)

(˚C / W)

(A)

Total height (max)

Rth(ch-a) (t = 10 s) ^{(Note 1)}

1.9

65.8

18

High current-carrying capacity

Low package resistance

Current rating

Package resistance^{(Note 2)}

(mΩ)

1.6

0.5

Note 1: When mounted on a glass-epoxy board (25.4 mm x 25.4 mm x 0.8 mm)

Note 2: Without chip resistance

■ New Process Technology

Toshiba has developed a new process technology to further reduce an internal gate resistance (rg) and gate capacitance ratio

(Cgd/Cgs) for minimizing the self-turn-on loss while maintaining both the low ON-resistance and low gate charge characteristics.

RDS(ON) Typ. @4.5 V (mΩ)

rg Typ. (Ω)

Cgd/Cgs Typ. (%)

TPCA8028-H (New generation)

TPCA8019-H (One gen. ago)

TPCA8004-H (Two gen. ago)

2.3

3.1

4.8

1.0

2.4

6.8

6.6

12.7

Efficiency Characteristics

f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V

90

Two low-side MOSFETs

One low-side MOSFET

88

86

84

82

80

78

76

74

88

86

84

82

80

High-side MOSFET Low-side MOSFET

78

76

74

TPCA8030-H (1p) + TPCA8028-H (2p)

TPCA8030-H (1p) + TPCA8036-H (2p)

TPCA8023-H (1p) + TPCA8019-H (2p)

TPCA8030-H (1p) + TPCA8028-H (1p)

TPCA8030-H (1p) + TPCA8036-H (1p)

TPCA8023-H (1p) + TPCA8019-H (1p)

New

device

New

device

Conventional

device

Conventional

device

0

5

10

15

20

25

0

5

10

15

20

25

Output Current (A)

22

Synchronous Rectification DC-DC Converters – MOSBD (MOSFET with SBD)

■ External SBD

● Dead time

● High-side MOSFET turned on

● Low-side MOSFET turned on

LS

LA

Large lrr

Current

When an SBD is added externally, the SBD can’t function fully

1: Increase in the conducting loss of the body diode.

2: Increase in the reverse recovery loss due to high di/dt.

3: Induces a self-turn-on phenomenon.

due to the influence of wire inductances (Ls and LA); thus a body

diode current during the dead time becomes larger and causes

the following penalties.

■ MOSFET with SBD (MOSBD)

A MOSFET with SBD using a monolithic structure reduces a wire inductance (L^A) and a parasitic inductance (LS). This structure makes

it possible for the SBD to function fully and to reduce losses.

● Current Waveform Simulation

Using External SBD

MOSFET with SBD (MOSBD)

MOSFET channel current

20

10

MOSFET channel current

Body diode current

10

0.0

-10

-20

SBD current

0.0

-10

-20

SBD current

Body diode current

691.01μ

691.04μ

691.07μ

691.10μ

691.01μ

691.04μ

691.07μ

691.10μ

time (s)

LS = LA = 0.5 nH

LS = LA = 0.01 nH

Efficiency Characteristics

f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V

90

88

86

84

82

80

78

76

74

90

Two low-side MOSFETs

One low-side MOSFET

88

86

84

82

80

78

76

74

High-side MOSFET

Low-side MOSFET

MOSBD (For heavy-load

applications)

TPCA8030-H (1p) + TPCA8A04-H (2p)

High-side MOSFET

Low-side MOSFET

MOSBD (For light-load

applications)

TPCA8030-H (1p) + TPCA8A02-H (2p)

TPCA8030-H (1p) + TPCA8019-H (2p)

MOSBD

Standard

MOSFET

TPCA8030-H (1p) + TPCA8A04-H (1p)

Standard MOSFET

TPCA8030-H (1p) + TPCA8019-H (1p)

0

5

10

15

20

25

0

5

10

15

20

25

Output Current (A)

23

Low-VDSS MOSFETs (in Small SMD Packages)

4

High-Speed MOSFET Offerings

R^DS(ON)Max (mΩ)

Qsw Typ.(nC)

@V^DS=

VDSS x 0.8

Absolute Maximum Ratings

Circuit

Configuration

Series

Part Number

Package

V^DSS(V) VGSS (V)

ID (A)

2.5 V

4.5 V

10 V

12

20

40

5

SOP Advance

VS-6

7.5

—

3.5

79

—

54

16

1.8

4.8

3.4

5.0

4.2

7.1

7.4

9.1

5.0

5

U-MOSIII-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSIII-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

TPCA8011-H

TPC6007-H

TPC6109-H

N-ch Single

30

–30

–5

6.4

11

13

22

26

21

24

30

11

12

13

15

17

18

21

23

24

30

34

38

40

45

50

3.9

7.5

12

16

18

7.5

20

30

32

35

38

46

83

59

P-ch Single

N-ch Dual

23.0

15.7

19.3

10.6

9.3

20

TPC8216-H ✩

TPCP8005-H ✩

TPCC8003-H ✩

TPCC8001-H ✩

TPCC8002-H ✩

TPCC8006-H ✩

TPCC8005-H ✩

TPCM8003-H ✩

TPCM8004-H ✩

TPCM8002-H ✩

TPC8021-H

TPC8031-H ✩

TPC8037-H ✩

TPC8038-H ✩

TPC8040-H ✩

TPC8032-H ✩

TPC8033-H ✩

TPC8039-H ✩

TPC8034-H ✩

TPC8036-H ✩

TPC8035-H ✩

TPCA8023-H ✩

TPCA8040-H ✩

TPCA8030-H ✩

TPCA8031-H ✩

TPCA8018-H ✩

TPCA8039-H ✩

TPCA8036-H ✩

TPCA8012-H ✩

TPCA8060-H ✩

TPCA8019-H ✩

TPCA8028-H ✩

TPC6006-H

SOP-8

PS-8

12.9

16.9

8.3

8.0

6.4

12.9

11

TSON Advance

TSSOP Advance

7.4

15.7

13.4

8.2

6.2

17

9.3

3.6

5.0

5

25

16.1

13.9

11.1

8.6

13.3

11.4

9.7

6.5

5.3

6.0

3.5

4.5

3.2

12.9

9.4

11.0

6.2

5.7

4.2

4.9

3.4

3.1

2.8

75

5

5.1

8.4

9.6

8.5

16

SOP-8

30

7.2

6.9

4.5

5.1

13

3.6

17

15.7

10.8

13.4

8.2

5.0

5.7

5

20

N-ch Single

5

9.3

8.6

13

SOP Advance

6.6

4.8

6.8

11.0

17

3.9

4.1

15.5

20

3.2

VS-6

100

35

1.3

3.5

6.6

11

27

TPC8022-H

13.3

8.8

11.5

7.6

5.7

3.9

27

TPC8052-H ✩

TPC8047-H ✩

TPC8046-H ✩

TPC8045-H ✩

TPCA8020-H

TPCA8052-H ✩

TPCA8014-H

TPCA8027-H

TPCA8047-H ✩

TPCA8015-H

TPCA8046-H ✩

TPCA8045-H ✩

SOP-8

6.6

15

4.4

23

35

3.5

6.6

7.4

8.1

13

40

13.1

14

11.3

9

—

10

SOP Advance

8.5

7.3

5.4

3.6

7.9

13

6.3

15

4.1

23

✩: No protection Zener diode between gate and source

24

RDS(ON) Max (mΩ)

Qsw Typ.(nC)

@V^DS

Absolute Maximum Ratings

V^DSS(V) VGSS (V) (A)

Circuit

Configuration

Part Number

Package

SOP-8

=

Series

ID

4.5 V

10 V

VDSS x 0.8

2.6

2.9

6.7

9.2

13

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

π-MOSV

3.8

64

56

57

50

TPC8218-H ✩

TPC8213-H

N-ch Dual

5

9

24.2

15.6

11.5

7.4

24

22.5

14.5

10.7

6.9

TPC8053-H ✩

TPC8050-H ✩

TPC8049-H ✩

TPC8048-H ✩

TPCA8053-H ✩

TPCA8050-H ✩

TPCA8016-H

TPCA8049-H ✩

TPCA8048-H ✩

TPC8051-H ✩

TPCA8051-H ✩

TPCP8003-H

TPC8214-H

TPCA8022-H

TPCA8009-H

TPCA8010-H

TPCA8008-H

TPCP8A05-H ✩

TPCC8A01-H ✩

11

13

16

15

24

25

28

35

13

28

2.2

22

7

60

17

22.3

14.2

21

6.9

10

15.3

26

N-ch Single

6.6

13

SOP Advance

11.2

7.1

10.1

9.8

190

—

10.4

6.6

19

SOP-8

SOP Advance

PS-8

9.7

16

80

9.4

18

180

26

2.0

14

N-ch Dual

100

150

SOP-8

SOP Advance

PS-8

—

350

450

580

17.5

9.9

3.7

2.7

4.1

3.7

4.5

8.4

13.4

3.7

8.6

11

N-ch Single

20

π-MOSV

200

5.5

4

—

π-MOSV

250

—

U-MOSV-H

8

21.9

12.6

17.2

17.6

12.9

7.0

4.5

17.2

6.7

5.1

4.1

54

21

20

10

12

17

18

20

34

38

44

TSON Advance

TSSOP Advance

U-MOSV-H

12.9

13.3

10.1

5.6

TPCM8A05-H ✩

TPC8A05-H ✩

TPC8A06-H ✩

TPC8A03-H ✩

TPC8A04-H ✩

TPCA8A05-H ✩

TPCA8A02-H ✩

TPCA8A08-H ✩

TPCA8A04-H ✩

TPCP8103-H

U-MOSV-H

U-MOSIII-H

SOP-8

30

MOSBD

3.6

12.9

5.3

SOP Advance

3.9

3.2

13.4

6.5

9.7

3.5

9.7

–4.8

–7.5

6.5

PS-8

SOP-8

40

37

30

TPC8116-H

TPCA8107-H

–40

P-ch Single

SOP Advance

37

30

35

27

40

N-ch/P-ch Dual

SOP-8

TPC8406-H

–40

–6.5

37

30

✩: No protection Zener diode between gate and source

25

Low-VDSS MOSFETs (in Small SMD Packages)

4

4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection)

Lithium-Ion Battery Protection Circuit Trend

Lithium-Ion Secondary

Battery Protection

TSSOP-8 (6.4 mm x 3.3 mm x 0.9 mm)

4.0-

3.5 mm

2003

PCM

STP (3.8 mm x 2.0 mm x 0.6 mm)

STP2 (3.8 mm x 1.6 mm x 0.6 mm)

LiB

3.0-

2004

2006

3.5 mm

3.0 mm

MOSFET Roadmap

2003

2004

2005

2006

2007

2008

2009

2010

TSSOP Advance

SOP Advance

SOP-8

TSON Advance

U-MOSIV

U-MOSV

U-MOSIV

U-MOSVI

P-ch

N-ch

PS-8

STP

STP2

TSSOP-8

Chip LGA

MOSFET + Control IC

U-MOSIV

U-MOSV

U-MOSVI

N-ch

26

Low-ON-resistance N-Channel Power MOSFETs

R^DS(ON)Max (mΩ)

Absolute Maximum Ratings

Circuit

Configuration

Part Number

Package

Series

V^DSS(V) VGSS (V)

ID (A)

2.5 V

4 V

4.5 V

10 V

12

20

12

30

12

20

49

52

55

64

13.7

—

32

39

—

24

—

50

20

—

U-MOSIV

U-MOSV

U-MOSIV

U-MOSIII

U-MOSIV

6

TPCT4203 ✩

TPCT4204 ✩

TPCL4201 ✩

TPCL4203 ✩✽

TPCL4202 ✩✽

TPCP8006 ✩

TPCP8004 ✩

TPCP8202

STP2

31

—

6

N-ch Dual

36

—

24

30

20

30

12

20

12

6

Chip LGA

40

10

—

6

9.1

8.3

5.5

N-ch Single

N-ch Dual

14

8.5

—

PS-8

39

(8.7)

—

23

(4.6)

12.8

14.5

17

—

TPCC8007 ✩✽

TPCC8008✩

TPC8025 ✩

TPC8030 ✩

TPC8041 ✩

TPC8026 ✩

TPC8028 ✩

TPC8029 ✩

20

30

20

30

12

25

20

25

20

12

20

27

25

11

13

18

5

TSON Advance

6.8

9

—

9

—

13.5

10

7

N-ch Single

—

6.6

4.3

3.8

3.4

2.7

—

8

—

7

SOP-8

—

6.5

5.5

—

TPC8042 ✩

TPC8027 ✩

TPC8208

—

70

30

—

TPC8207

6

N-ch Dual

44

36

15

4.3

3.5

3.3

2.2

TPC8211

5.5

8

—

20

TPC8210

TPCA8024 ✩

—

7.8

6.0

5.7

4.5

35

40

45

—

TPCA8025 ✩

TPCA8042 ✩

N-ch Single

SOP Advance

—

TPCA8026 ✩

✩: No protection Zener diode between gate and source ✽: Under development

Low-ON-resistance P-Channel Power MOSFETs

Absolute Maximum Ratings

R^DS(ON)Max (mΩ)

Circuit

Configuration

Part Number

Package

Series

V^DSS(V) V^GSS(V)

ID (A)

2.5 V

4 V

4.5 V

10 V

U-MOSV

U-MOSIV

U-MOSV

U-MOSIV

U-MOSVI

U-MOSV

U-MOSIV

U-MOSV

U-MOSVI

U-MOSIII

U-MOSIV

U-MOSV

U-MOSIV

U-MOSV

TPCC8102 ✩

TPCC8103 ✩

TPC8115

–30

–20

–30

30

20

–15

–18

–10

–11

–12

–13

–18

6

—

14

—

51

—

33.2

22

—

18.9

12

—

TSON Advance

—

10

—

8

28

13

12

10

9

TPC8119 ✩

TPC8121 ✩

TPC8111

20

24

—

18

—

20

P-ch Single

TPC8113

20

18

—

12.5

—

–25/+20

20

TPC8123 ✩

TPC8122 ✩

TPC8118 ✩

SOP-8

16.5

15

8

20

—

7

20

6.8

7.9

—

4.5

3.9

3.2

26

33

7.7

—

TPC8114

TPC8117 ✩

TPC8120 ✩

20

—

4.2

33

42

—

–25/+20

20

—

TPC8405

N-ch/P-ch Dual

P-ch Single

–30

–12

–30

20

–4.5

–25

–6

—

TPCM8102 ✩

TPCA8105

20

TSSOP Advance

SOP Advance

16

8

33

—

TPCA8103

20

–40

6.8

7.8

—

4.2

3.7

—

TPCA8106 ✩

20

✩: No protection Zener diode between gate and source

27

Low-VDSS MOSFETs (in Small SMD Packages)

4

4-6 Semi-Power MOSFET Offerings

Semi-Power P-Channel Single MOSFETs

Unit: mm

RDS(ON) Max (mΩ)

VDSS VGSS

ID

(A)

Ciss

(pF)

*Internal

Connections

Land Pattern

Example

Package

Part Number

Series

V^GS

=

VGS =

l 2.5 V l

VGS =

l 4.0 V l

(V)

l 1.5 V l

l 1.8 V l

0.7

CST3B

D

103

(@4.5 V)

U-MOSVI

SSM3J46CTB –20

SSM6J212FE✽ –20

8

–2.0

250

178

133

290

G

S

0.25

0.48

0.8

TOP VIEW

0.45

8

–3.3

–1.8

–2.0

–0.8

–0.5

–1.2

108

364

—

73.7

204

320

460

980

—

45.6

136

186

306

330

210

430

—

43.4(@4.5V) 834

U-MOSVI

U-MOSIV

U-MOSIII

U-MOSII

U-MOSVI

U-MOSIV

U-MOSV

U-MOSIV

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSII

U-MOSV

U-MOSIV

U-MOSIII

SSM6J53FE

SSM6J206FE

SSM6J205FE

SSM6J26FE

SSM6J23FE

SSM6J25FE

SSM6J207FE

–20

–12

–20

–30

—

568

335

250

420

218

137

ES6

(SOT-563)

0.3

130

234

230

160

260

491

1.0

—

0.5 0.5

—

1.6

0.55

12 –0.5

20 –1.4

—

SSM3J132TU✽ –12

5

8

–5.0

–4.4

–4.0

–4.6

–2.2

–2.3

–2.0

–1.8

40.4

63.2

140

137

353

—

28.3

41.1

78

21.7

31

17.8(@4.5V) 2700

25.8(@4.5V) 1800

SSM3J130TU

SSM3J120TU

SSM3J129TU

SSM3J115TU

SSM3J110TU

SSM3J109TU

SSM3J114TU

SSM3J108TU

SSM3J113TU

SSM3J111TU

SSM3J117TU

SSM3J118TU

SSM3J112TU

SSM6J409TU

SSM6J51TU

SSM6J50TU

SSM6J21TU

SSM6J401TU

SSM6J402TU

–20

–12

–20

–30

–20

–12

–20

–12

–30

49

38

1484

88

62

46(@4.5V) 640

193

240

300

321

363

—

125

145

172

199

230

249

680

—

98

568

550

335

331

250

370

160

280

137

86

0.5

UFM

94

—

130

149

158

169

480

225

480

790

526

—

2.0

0.7

0.65

12 –1.7

12 –1.0

20 –2.0

20 –1.4

20 –1.1

—

8

–9.5

–4.0

72.3

150

—

46.3

85

30.2

54

22.1(@4.5V) 1100

UF6

—

1700

10 –2.5

12 –3.0

20 –2.5

20 –2.0

205 (@2.0V)

—

100

88

64 (@4.5V) 800

0.45

—

50

1300

730

—

145

225

2.0

0.7

—

280

US6(SOT-363)

SSM6J08FU

SSM6J06FU

SSM6J07FU

–20

–30

12 –1.3

12 –0.65

20 –0.8

—

460 (@2.0V)

260

700

—

180

500

800

370

160

130

U-MOSII

π-MOSVI

0.65

—

2.0

0.9

SSM3J307T

SSM3J321T

SSM3J326T✽

SSM3J13T

SSM3J312T

SSM3J304T

SSM3J317T

SSM3J313T

SSM3J01T

SSM3J02T

SSM3J314T

SSM3J14T

SSM3J306T

SSM3J305T

–20

–30

–12

–20

–30

8

–5.0

–5.2

83

137

—

56

88

40

62

31(@4.5V) 1170

46(@4.5V) 640

45.7(@4.5V) 640

U-MOSV

U-MOSVI

U-MOSIII

π-MOSVI

U-MOSIII-H

U-MOSII

12 –5.6

115

180 (@2.0V)

237

297

306

640

—

62.5

95

8

–3.0

–2.7

–2.3

–3.6

–1.6

70

91

890

550

335

TSM

142

169

144

396

600

700

—

0.8

127

107(@4.5V) 390

268

400

500

100

170

225

477

170

240

150

505

413

280

137

10 –1.7

10 –1.5

20 –3.5

20 –2.7

20 –2.4

20 –1.7

2.9

0.7

0.95

—

0.8

S-Mini

SSM3J327F✽

SSM3J325F✽

–20

8

–3.5

–2.0

242

362

170

252

125

191

95(@4.5V) 290

155(@4.5V) 226

U-MOSVI

0.95

2.9 ± 0.2

1.1

* The internal connection diagrams only show the general configurations of the circuits.

✽: Under development

28

Semi-Power N-Channel Single MOSFETs

Unit: mm

R

DS(ON) Max (mΩ)

V^DSSV^GSS

I^D

(A)

Ciss

(pF)

*Internal

Connections

Land Pattern

Example

Package

Part Number

Series

V

GS =

V

GS = GS =

V

VGS =

l 4.0 V l

(V)

l 1.5 V l

l 1.8 V l

l 2.5 V l

0.5

CST4

D

G

D

S

SSM4K27CT

20

12

0.5

—

390

260

205

174

U-MOSIII

0.38

0.8

0.2

TOP VIEW

SSM6K211FE

SSM6K203FE

SSM6K202FE

SSM6K204FE

SSM6K208FE

SSM6K25FE

SSM6K24FE

SSM6K22FE

SSM6K210FE

SSM6K30FE

SSM6K31FE

SSM3K123TU

SSM3K121TU

SSM3K104TU

SSM3K119TU

SSM3K102TU

SSM3K122TU

SSM3K101TU

SSM3K127TU

SSM3K116TU

SSM3K131TU

SSM3K124TU

SSM3K105TU

SSM3K128TU

SSM3K107TU

SSM3K106TU

SSM6K403TU

SSM6K404TU

SSM6K405TU

SSM6K18TU

SSM6K406TU

SSM6K34TU

SSM6K407TU

SSM6K32TU

20

30

20

30

20

30

20

30

20

30

20

30

20

30

60

10

12

10

12

20

10

12

10

12

20

10

12

20

3.2

2.8

2.3

2.0

1.9

0.5

1.4

1.2

4.2

3.2

3.0

2.5

2.6

2.0

2.2

2.0

2.2

6.0

2.4

2.1

1.5

1.2

4.2

3.0

2.0

4.0

4.4

3.0

2.0

118

153

—

82

106

145

214

296

395

—

59

76

47(@4.5 V) 510

U-MOSIII

π-MOSVII

61

85

400

270

195

123

268

245

125

57

101

164

177

190

180

230

—

ES6

(SOT-563)

307

—

126

133

145

170

371

420

540

28

0.3

1.0

—

0.5 0.5

—

1.6

0.55

—

60

—

36

66

140

—

43

32

1010 U-MOSIII

93

63

48

400

320

270

268

195

125

123

245

U-MOSIII

U-MOSIV

π-MOSVII

π-MOSVI

U-MOSIII

π-MOSVII

110

134

154

211

230

286

—

74

56

—

90

74

—

99

71

304

—

161

138

167

135

—

123

103

123

100

UFM

0.5

—

2.0

0.7

0.65

—

41.5(@4.5 V) 450

—

120

200

360

410

530

28

180

102

57

—

60

—

36

66

147

307

—

43

32

1050 U-MOSIII

100

214

—

70

55

400

195

U-MOSIII

UF6

164

54

126

40

1100 U-MOSIII

0.45

—

38.5 (@4.5 V) 490

77 (@4.5 V) 470

U-MOSIV

U-MOSIII

π-MOSV

—

2.0

0.7

—

440

150

140

—

0.65

US6(SOT-363)

SSM6K08FU

SSM6K06FU

SSM6K07FU

20

30

12

20

1.6

1.1

1.5

—

210 (@2.0 V)

140

210

—

105

160

220

306

125

102

U-MOSII

π-MOSVI

—

2.0

0.9

SSM3K310T

SSM3K309T

SSM3K301T

SSM3K316T

SSM3K01T

SSM3K02T

SSM3K315T

SSM3K14T

SSM3K320T

SSM3K303T

SSM3K12T

SSM3K318T

20

30

60

10

12

10

20

5.0

4.7

3.5

4.0

3.2

2.5

6.0

4.0

4.2

2.9

3.0

2.5

66

—

43

47

110

131

—

32

35

74

87

150

250

—

28

31

56

1120 U-MOSIII

1020 U-MOSIII

320

U-MOSIII

π-MOSVI

U-MOSIV

U-MOSII

U-MOSIV

π-MOSVII

U-MOSIV

TSM

0.8

65(@4.5 V) 270

120

200

152

115

—

41.5(@4.5 V) 450

0.95

2.9

0.7

—

67

460

—

77(@4.5 V) 190

—

120

175

180

120

—

145(@4.5 V) 235

* The internal connection diagrams only show the general configurations of the circuits.

29

Low-VDSS MOSFETs (in Small SMD Packages)

4

Semi-Power Dual MOSFETs

Unit: mm

R^DS(ON)Max (mΩ)

V^GS= VGS = VGS = VGS =

l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l

V^DSSV^GSS

I^D

(A)

Ciss

(pF)

*Internal

Connections

Land Pattern

Example

Package

Polarity

Part Number

Series

(V)

Q1

260

(@4.5 V)

ES6

(SOT-563)

0.3

N-ch x 2

20

10 0.77

630

460

340

440

95

U-MOSIII

SSM6N42FE✽

Q2

1.0

0.5 0.5

Q1

300

(@4.5 V)

P-ch x 2

N-ch x 2

SSM6P41FE

–20

8

–0.72 1040 670

110

U-MOSV

1.6

0.55

Q2

SSM6N39TU

SSM6N29TU

SSM6N25TU

SSM6N24TU

SSM6N40TU

SSM6P54TU

SSM6P39TU

SSM6P28TU

SSM6P26TU

SSM6P25TU

SSM6P40TU

20

10

12

20

8

1.6

0.8

0.5

1.6

247

—

190

235

395

—

139

178

190

180

—

119

143

145

182

—

260

268

245

180

331

250

218

120

260

250

268

250

268

250

268

218

245

218

180

120

U-MOSIII

U-MOSIV

U-MOSIII

Q1

20

—

Q2

30

—

30

—

–20

–30

20

–1.2 555

350

430

460

980

—

228

294

306

330

430

—

8

–1.5

–0.8

–0.5

—

247

—

213

234

230

260

403

119

213

143

234

145

230

145

260

145

260

182

403

Q1

8

P-ch x 2

8

Q2

12 –0.5

20 –1.4

—

10

8

1.6

–1.5

0.8

190

430

235

460

395

980

395

—

139

294

178

306

190

330

190

430

180

430

—

SSM6L39TU

SSM6L13TU

SSM6L10TU

SSM6L11TU

SSM6L12TU

SSM6L40TU

–20

20

UF6

0.45

12

8

–20

20

–0.8

0.5

12

8

Q1

–20

20

–0.5

0.5

2.0

0.7

N-ch + P-ch

0.65

12

Q2

–20

30

12 –0.5

12 0.5

12 –0.5

20 1.6

20 –1.4

12 1.0

—

–20

30

—

–30

—

–12

–

—

240

160

310

11

U-MOSIII

π-MOSVI

SSM6E01TU

Q1

Q2

20

10

0.05

10 Ω

—

P-ch + N-ch

–20

20

8

10

8

–1.8 364

0.1 15

204

—

136

568

9.3

335

9.3

U-MOSIV

π-MOSVI

U-MOSIII

π-MOSVI

(Load Switch)

SSM6E02TU

SSM6E03TU

Q1

Ω

4

Ω

3 Ω

Q2

–20

20

–1.8

—

335

—

180

144

10

0.1 15

Ω

4

Ω

3 Ω

✽: Under development

* The internal connection diagrams only show the general configurations of the circuits.

MOSFET with a Schottky Barrier Diode

Unit: mm

MOSFET

SBD

R^DS(ON)Max (mΩ)

V^GS= VGS = VGS = VGS =

l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l

*Internal

Connections

Land Pattern

Example

V^FMax (V)

@I

(A)

Package

Polarity Part Number

V^DSSV^GSS

(V) (V)

I^D

(A)

Ciss

(pF)

V^R

(V)

I^O

(A)

Series

F

U-MOSII

U-MOSIII

U-MOSII

U-MOSIII-H

U-MOSII

U-MOSIII

U-MOSII

U-MOSIII

U-MOSII

π-MOSVII

SSM5G09TU –12

SSM5G02TU –12

8

–1.5

—

200 130 550

12

20

12

30

20

30

12

20

12

30

20

12

0.5 0.43 0.5

0.7 0.39 0.5

0.5 0.43 0.5

0.7 0.41 0.5

0.5 0.45 0.3

0.7 0.39 0.5

0.7 0.41 0.5

0.5 0.43 0.5

0.5 0.45 0.3

0.5 0.43 0.5

0.7 0.41 0.5

0.5 0.45 0.3

0.5 0.43 0.5

12 –1.0

–1.5

—

240 160 310

SSM5G10TU –20

SSM5G04TU –12

SSM5G11TU –30

SSM5G01TU –30

SSM5H10TU 20

SSM5H12TU 30

SSM5H05TU 20

SSM5H08TU 20

SSM5H03TU 12

SSM5H11TU 30

SSM5H01TU 30

SSM5H07TU 20

8

430 294 213 250

P-ch+

SBD

12 –1.0

20 –1.4

20 –1.0

—

420 240 170

0.45

—

403 120

800 86

UFV

10 1.6 247 190 139 119 260

12 1.9

12 1.5

12 1.4

20 1.6

20 1.4

20 1.2

—

296 177 133 123

2.0

0.7

—

220 160 125

0.65

N-ch+

SBD

—

300 125

182 180

450 106

540

36

* The internal connection diagrams only show the general configurations of the circuits.

30

MOSFET with a Schottky Barrier Diode

Unit: mm

MOSFET

SBD

V^FMax (V)

*Internal

Connections

Land Pattern

Example

R

DS(ON) Max (mΩ)

Package

Polarity Part Number

V

DSS

V

GSS

I

D

Ciss

(pF)

VR

(V)

I^O

Series

@IF

(A)

V^GS= VGS = VGS = VGS =

l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l

(V)

(V) (A)

(A)

0.95 0.95

SMV

N-ch+

SBD

30

12 3.0

—

138

94

78

270 U-MOSIII 45

0.1 0.6 0.1

SSM5H14F

0.8 0.6 0.8

2.9

1.1

* The internal connection diagrams only show the general configurations of the circuits.

VS-6 Series … [Part Number:TPC6xxx]

■ Features

• Zener diode between gate and source for all products

• Thin package, with a board mounting height as low as 0.85 mm (max)

■ Product Offerings

Absolute Maximum Ratings

RDS(ON) Max (mΩ)

Circuit

Qg Typ. C^issTyp.

Part Number

Marking

Series

Configuration

(nC)

(pF)

1400

640

V^DSS(V) VGSS (V)

ID (A)

6

10 V

—

4.5 V

24

2.5 V

32

2.0 V

37

—

1.8 V

—

12

20

12

20

8

17

S2C

S2L

S2E

S2G

S2F

S3C

S3E

S3G

S3L

S3H

S3J

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIII-H

U-MOSIII

U-MOSIV

U-MOSV

20

30

TPC6004

—

6

20

—

32

—

14

TPC6011 ✩✽

TPC6005

N-ch

Single

35

41

—

19

1420

240

30

6

28

—

2.8

2.4

20

30

5

54

75

—

79

TPC6007-H

TPC6006-H

TPC6103

—

251

40

3.9

–5.5

–2.7

–4.5

–5.5

–4.5

–5

100

35

55

—

90

300

—

1520

470

–12

–20

–30

8

160

100

57

—

6

—

110

55

TPC6105

P-ch

Single

9.8

10

680

180

—

12

8

—

TPC6107

700

80

—

40

TPC6111

20

—

13

570

U-MOSIV

U-MOSIII-H

60

59

100

83

TPC6108

—

7.2

471

20

—

TPC6109-H

✩: No protection Zener diode between gate and source ✽: Under development

VS-8 Series … [Part Number:TPCF8xxx]

■ Features

• Ultra-low ON-resistance achieved by employing the U-MOS process

• Thin package, with a board mounting height as low as 0.85 mm (max)

• 32% reduction in mounting area compared with the VS-6 (TSOP-6) Series, due to the use of

a high-density flat package

• P^D= 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board

■ Product Offerings

R^DS(ON)Max (mΩ)

Absolute Maximum Ratings

Circuit

Qg Typ. C^issTyp.

Part Number

Marking

Series

Configuration

(nC)

TBD

18

6

(pF)

TBD

1600

470

1550

1760

590

470

800

860

600

470

600

590

470

VDSS (V) VGSS (V)

ID (A)

6

10 V

23

—

4.5 V

2.5 V

—

2.0 V

1.8 V

—

F2B

F3A

F3C

F3B

F3D

F4A

F5A

F5B

F5C

F5D

20

8

U-MOSIV

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIV

U-MOSIII

30

–12

–20

–30

20

N-ch Single

P-ch Single

31

28

—

TPCF8002 ✩

TPCF8101

TPCF8103

TPCF8102

TPCF8104

TPCF8201

TPCF8301

TPCF8302

TPCF8303

TPCF8304

–6

40

85

8

–2.7

–6

—

110

30

160

41

—

300

90

8

—

19

34

7.5

6

20

12

8

–6

28

—

38

—

3

N-ch Dual

P-ch Dual

49

66

100

—

–20

–30

30

–2.7

–3

—

110

59

160

95

300

—

10

8

—

200

—

11

14

10

14

7.5

6

–3

—

58

87

250

—

20

–3.2

4

72

50

72

—

105

77

—

N-ch + P-ch

F6B

TPCF8402

–30

20

12

8

–3.2

3.0

–2.7

105

49

—

N-ch + SBD

P-ch + SBD

66

100

—

F7A

F8A

TPCF8A01

TPCF8B01

–20

—

110

160

300

✩: No protection Zener diode between gate and source

31

Low-VDSS MOSFETs (in Small SMD Packages)

4

PS-8 Series … [Part Number:TPCP8xxx]

■ Features

• Same mounting area as for the VS-6 (TSOP-6) Series

• Using flat leads and the latest U-MOS process (U-MOSIV), the PS-8 Series offers a 70% reduction in

RDS(ON) compared with the VS-6 Series.

■ Product Offerings

R^DS(ON)Max (mΩ)

4.5 V 2.5 V

Absolute Maximum Ratings

Circuit

Configuration

Q

(nC)

g

Typ.

C^issTyp.

(pF)

Part Number

Series

V^DSS(V) VGSS (V)

ID (A)

9.1

7.2

8.3

11

10 V

—

4 V

—

33

—

3Ω

—

180

105

1.8 V

—

90

—

95

—

103

—

U-MOSIV

U-MOSIII-H

U-MOSIV

U-MOSV-H

U-MOSIII-H

U-MOSIII

U-MOSIV

U-MOSIII-H

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIV

U-MOSV

TPCP8006 ✩

TPCP8001-H

TPCP8004 ✩

TPCP8005-H ✩

TPCP8A05-H ✩

20

30

12

20

8

10

25

13.7

—

22

11

26

20

16

7.5

19

33

19

10

28

16

20

10

—

1480

640

1270

1433

1300

360

1550

2560

800

470

2150

770

1500

640

—

16

8.5

12.9

17.5

180

—

N-ch Single

14.5

15.7

21.9

190

30

—

8

MOSBD

—

N-ch Single

100

–20

–40

30

2.2

–5.6

–7.2

–4.8

4.2

—

TPCP8003-H ✩

TPCP8101

TPCP8102

TPCP8103-H

TPCP8201

TPCP8202

TPCP8203

TPCP8301

TPCP8302

TPCP8303

41

30

—

12

20

P-ch Single

N-ch Dual

—

18

40

50

—

54

77

—

30

12

20

12

8

5.5

23

39

—

40

—

60

40

4.7

31

60

45

57

4Ω

58

—

–20

20

–5

P-ch Dual

—

–5

–3.8

0.1

—

40

10

8

—

π-MOSVI

N-ch/P-ch

Load Switch

TPCP8401

TPCP8402

TPCP8404 ✩

TPCP8403

U-MOSIII

U-MOSIV

U-MOSV

–12

30

–5.5

4.2

—

38

20

10

14

4.6

13

16

15

—

1520

470

600

190

510

770

680

—

20

50

72

50

40

70

—

77

N-ch + P-ch

20

–30

30

–3.4

4

105

100

60

—

20

12

20

—

–30

40

–4

U-MOSIII

U-MOSII

—

4.7

105

—

–40

–20

20

–3.4

–1.3

260

140

TPCP8BA1

TPCP8AA1

MOSBD

—

U-MOSII

1.6

–5.5

0.1

–32

50

U-MOSIV

U-MOSIV + Bip-Tr

35

—

49

—

34

—

1760

—

TPCP8J01

P-ch + NPN

✩: No protection Zener diode between gate and source

Chip LGA Series ... [Part Number:TPCL4xxx]

■ Features

• Chip-scale package for high-density board assembly (58% reduction in mounting area compared

with the STP2 package)

■ Product Offerings

R^DS(ON)Max (mΩ)

Absolute Maximum Ratings

Circuit

Configuration

Qg Typ.

(nC)

Ciss Typ.

(pF)

Part Number

Series

V^DSS(V) VGSS (V)

ID (A)

4.5 V

31

4 V

33

3.1 V

44

2.5 V

52

20

24

30

12

6

11.5

(10)

720

U-MOSV

TPCL4201 ✩

TPCL4203 ✩✽

TPCL4202 ✩✽

(46)

(50)

(55)

(64)

(36)

(40)

(38)

(42)

(685)

(780)

N-ch Dual

✩: No protection Zener diode between gate and source ✽: Under development

STP2 Series ... [Part Number:TPCT4xxx]

■ Features

• The combination of a new chip design using Toshiba U-MOSIV process technology and a new small

pump-structured package, offers low ON-resistance.

■ Product Offerings

R^SS(ON)Max (mΩ)

Absolute Maximum Ratings

Circuit

Configuration

Qg Typ.

(nC)

C^issTyp.

(pF)

Part Number

Series

VSSS (V)

VGSS (V)

12

IS (A)

2.5 V

49

4 V

32

4.5 V

31

U-MOSIV

TPCT4203

TPCT4204

20

30

6

11

12

790

780

N-ch Dual

12

52

39

38

32

TSON Advance Series … [Part Number:TPCC8xxx]

■ Features

• The small thermally enhanced package gives a 64% reduction in mounting area compared with

SOP-8, yet an equivalent maximum permissible power dissipation.

■ Product Offerings

Absolute Maximum Ratings

Q^gTyp.

(nC)

R^DS(ON)Max (mΩ)

C^issTyp.

(pF)

Circuit

Part Number

Series

Configuration

VDSS (V)

VGSS (V)

12

ID (A)

10 V

—

4.5 V

(4.6)

12.8

4 V

—

2.5 V

(8.7)

—

TPCC8007 ✩✽

TPCC8008 ✩

20

30

27

25

13

22

TBD

30

TBD

1600

990

U-MOSIV

25

20

6.8

—

16.9

8.3

19.3

10.6

—

8.6

U-MOSVI-H

U-MOSV-H

TPCC8003-H ✩

TPCC8001-H ✩

N-ch Single

1900

14.3

U-MOSV-H,

rg=3.2Ω(Typ.)

8.3

10.6

—

1900

20

TPCC8002-H ✩

14.3

30

22

20

9.9

8.0

6.4

18.9

12

12.6

9.3

7.4

—

TPCC8A01-H ✩

TPCC8006-H ✩

TPCC8005-H ✩

TPCC8102 ✩

30

21

22

MOSBD

U-MOSV-H

U-MOSVI-H

U-MOSV

10.1

15.0

19.0

26

1430

1700

2200

N-ch Single

—

30

26

33.2

22

–30

–15

–18

1200

1600

P-ch Single

U-MOSV

—

TPCC8103 ✩

38

✩: No protection Zener diode between gate and source ✽: Under development

TSSOP Advance Series … [Part Number:TPCM8xxx]

■ Product Offerings

Absolute Maximum Ratings

Circuit

R^DS(ON)Max (mΩ)

Qg Typ.

(nC)

C^issTyp.

(pF)

Part Number

Configuration

Series

V^DSS(V)

VGSS (V)

I^D(A)

20

10 V

9.5

4.5 V

14

4 V

—

16

30

20

19

11

26

18

7.4

60

1130

1433

1270

2270

1300

2450

U-MOSIII-H

U-MOSV-H

U-MOSIV

TPCM8001-H

TPCM8003-H ✩

TPCM8004-H ✩

TPCM8006

21

12.9

11

15.7

13.4

13.5

8.2

30

24

N-ch Single

30

25

7.0

TPCM8002-H ✩

TPCM8A05-H ✩

TPCM8102

30

20

30

6.2

U-MOSV-H

U-MOSV

MOSBD

30

20

12.9

7.7

17.2

—

P-ch Single

–30

–25

✩: No protection Zener diode between gate and source

SOP-8 Series … [Part Number:TPC8xxx]

■ Features

• Low ON-resistance and high-speed-switching series are available.

Low ON-resistance series: UMOSIV/V/VI

High-speed-switching series: U-MOSIII-H and U-MOSV-H

• ON-resistance reduction through the use of an AI strap structure

■ Product Offerings

R^DS(ON)Max (mΩ)

Absolute Maximum Ratings

Circuit

Qg Typ.

(nC)

Ciss Typ.

(pF)

Part Number

Configuration

Series

V^DSS(V)

30

VGSS (V)

20

ID (A)

11

12

13

15

17

10 V

17

4.5 V

25

4 V

—

2.5 V

—

11

26

24

11

12

27

42

17

18

22

640

U-MOSIII-H

U-MOSIV

TPC8021-H

20

TPC8025 ✩

9

1270

1140

1433

1700

1270

1800

2270

2600

2900

30

14.5

17

25

8.5

11.4

9.7

7

TPC8030 ✩

30

U-MOSIV

TPC8037-H ✩

TPC8038-H ✩

TPC8040-H ✩

TPC8041 ✩

30

20

13.9

11.1

13.5

10

U-MOSV-H

U-MOSVI-H

U-MOSIV

30

N-ch

Single

30

20

30

TPC8026 ✩

6.6

6.5

5.7

5.3

30

U-MOSIV

TPC8032-H ✩

TPC8039-H ✩

TPC8033-H ✩

30

8.6

U-MOSV-H

U-MOSVI-H

U-MOSV-H

30

6.6

30

7.2

✩: No protection Zener diode between gate and source

33

Low-VDSS MOSFETs (in Small SMD Packages)

4

■ Product Offerings

R^DS(ON)Max (mΩ)

Absolute Maximum Ratings

V^DSS(V) VGSS (V) ID (A)

Circuit

Configuration

Qg Typ.

(nC)

Ciss Typ.

(pF)

Part Number

Series

10 V

4.3

3.8

4.5

3.5

3.2

3.4

2.7

27

4.5 V

8

4 V

—

50

20

—

2.5 V

—

70

30

—

TPC8028 ✩

TPC8029 ✩

TPC8036-H ✩

TPC8034-H ✩

TPC8035-H ✩

TPC8042 ✩

TPC8027 ✩

TPC8022-H

TPC8052-H ✩

TPC8047-H ✩

TPC8046-H ✩

TPC8045-H ✩

TPC8053-H ✩

TPC8050-H ✩

TPC8049-H ✩

TPC8048-H ✩

TPC8051-H ✩

TPC8012-H

TPC8208

30

40

60

80

200

20

30

20

12

20

8

18

7.5

12

16

18

9

45

49

26

35

44

56

113

11

13

23

31

48

13

21

29

46

43

11

9.5

22

25

16

7.6

75

1800

2200

3500

4614

6000

2900

4200

650

U-MOSIV

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSIV

U-MOSIII-H

U-MOSVI-H

π-MOSV

7

5.1

4.5

3.6

6.5

5.5

35

11.5

7.6

5.7

3.9

22.5

14.5

10.7

6.9

9.7

400

—

13.3

8.8

6.6

4.4

24.2

15.6

11.5

7.4

10.1

—

1620

2590

3545

5800

1620

2590

3545

5800

440

N-ch

Single

11

13

16

13

1.8

5

U-MOSIII

—

780

6

—

2010

1250

840

U-MOSIII

TPC8207

5.5

6

36

44

U-MOSIII

TPC8211

21

27

U-MOSIII-H

U-MOSVI-H

U-MOSIII

TPC8212-H

TPC8216-H ✩

TPC8210

N-ch

Dual

6.4

8

20

23

900

15

20

3530

TPC8218-H✩

TPC8213-H

TPC8214-H

TPC8115

57

50

64

56

190

10

—

14

—

5.7

6

640

625

U-MOSVI-H

U-MOSIII-H

U-MOSIV

U-MOSV

60

3.8

5

60

100

–20

–30

2.2

–10

–11

180

—

4.5

115

40

360

—

9130

1560

1770

5710

4500

2940

2450

2700

7480

4600

7420

1190

2180

1240

1540

650

20

13

28

24

18

—

TPC8119 ✩

TPC8121 ✩

TPC8111

12

—

42

U-MOSV

12

—

107

68

U-MOSIV

U-MOSVI

U-MOSV

TPC8113

10

—

TPC8123 ✩

TPC8122 ✩

TPC8118 ✩

TPC8114

–30 –25/+20 –11

9

12.5

—

–30

20

–12

–13

–18

8

16.5

15

6.8

7.9

—

62

P-ch

Single

7

—

65

U-MOSV

4.5

3.9

3.2

30

—

180

130

180

27

U-MOSIV

U-MOSV

TPC8117 ✩

TPC8120 ✩

TPC8116-H

TPC8110

—

–30 –25/+20 –18

4.2

37

—

U-MOSVI

U-MOSIII-H

U-MOSIII

–40

30

20

–7.5

–8

—

25

35

—

48

6

26

33

42

35

37

—

27

U-MOSIII

TPC8405

–30

40

–4.5

6.5

33

—

40

U-MOSIV

U-MOSIII-H

π-MOSV

27

—

11

N-ch/P-ch

Dual

TPC8406-H

30

—

1190

267

27

–40

250

–250

30

–6.5

1.1

1.7

2.55

25

—

10

TPC8404

TPC8A01

π-MOSV

U-MOSIII

–0.9

6

—

12

381

30

21

17.6

12.9

7

—

17

940

N-ch/

N-ch + SBD

30

8.5/1

10/1

12/1

17/1

18/1

18

—

49

2295

1300

1400

2640

4400

TPC8A05-H ✩

TPC8A06-H ✩

TPC8A03-H ✩

TPC8A04-H ✩

13.3

10.1

5.6

3.6

—

7.4

9.6

19

30

U-MOSV-H

30

20

—

MOSBD

30

—

30

4.5

—

29

✩: No protection Zener diode between gate and source

34

SOP Advance Series … [Part Number:TPCA8xxx]

■ Features

• Low ON-resistance and high-speed-switching series are available.

Low ON-resistance series: UMOSIV/V

High-speed-switching series: U-MOSIII-H, U-MOSV-H and U-MOSVI-H

• High-current, thin and thermally enhanced package

■ Product Offerings

Absolute Maximum Ratings

V^DSS(V) VGSS (V)

R^DS(ON)Max (mΩ)

4.5 V 2.5 V

Circuit

Configuration

Qg Typ.

(nC)

Ciss Typ.

(pF)

Part Number

Series

ID (A)

40

23

24

30

34

35

38

40

45

50

7.5

20

30

32

35

38

46

15

24

25

28

35

28

18

22

7

10 V

—

4 V

—

6.8

7.8

—

24

—

1.8 V

—

92

—

U-MOSIII-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSIV

U-MOSVI-H

U-MOSV-H

U-MOSIV

TPCA8011-H

TPCA8040-H ✩

TPCA8030-H ✩

TPCA8031-H ✩

TPCA8018-H ✩

TPCA8039-H ✩

TPCA8024 ✩

TPCA8036-H ✩

TPCA8012-H ✩

TPCA8025 ✩

TPCA8060-H ✩

TPCA8042 ✩

TPCA8019-H ✩

TPCA8026 ✩

TPCA8028-H ✩

TPCA8020-H

TPCA8052-H ✩

TPCA8014-H

TPCA8027-H

TPCA8047-H ✩

TPCA8015-H

TPCA8046-H ✩

TPCA8045-H ✩

TPCA8053-H ✩

TPCA8050-H ✩

TPCA8016-H

TPCA8049-H ✩

TPCA8048-H ✩

TPCA8051-H ✩

TPCA8006-H

TPCA8022-H

TPCA8009-H

TPCA8010-H

TPCA8008-H

TPCA8105

20

30

40

60

80

100

150

200

250

–12

–30

–40

–60

30

12

20

3.5

10.8

13.4

8.2

6.6

7.8

4.8

6.8

6.0

3.9

5.7

4.1

4.5

3.2

35

13.1

14

—

8.5

7.9

6.3

4.1

24

15.3

26

11.2

7.1

9.8

—

7.5

—

51

—

32

11.7

83

18

19

45

26

22

49

34

56

34

113

46

11

13

22

23

37

29

47

13

21

22

29

46

47

12

38

10

18

184

120

27

100

90

7.4

19

24

30

2900

1700

1433

2270

2600

1800

3500

2900

2200

4600

2900

4614

4200

6000

650

1620

1365

1430

2590

2155

3545

5800

1620

2590

1375

3545

5800

780

9.4

11.0

6.2

5.7

4.3

4.2

4.9

3.5

3.4

3.3

3.1

2.2

2.8

27

U-MOSVI-H

U-MOSIV

U-MOSV-H

U-MOSIV

20

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

U-MOSIII-H

U-MOSVI-H

π-MOSVII

U-MOSIII-H

π-MOSV MACHII

U-MOSIV

U-MOSV

U-MOSIII-H

U-MOSIII

20

8

11.3

9

10

N-ch

Single

7.3

5.4

3.6

22.3

14.2

21

10.4

6.6

9.4

67

26

2330

600

350

450

580

—

4.2

3.7

30

9.5

16

12.9

5.3

4.2

3.2

5.5

4

600

–6

–40

–7.5

–40

10

34

38

42

33

—

37

—

17.2

6.7

5.3

4.1

1600

7880

4600

1190

4820

4300

1300

2640

3500

4400

TPCA8103

20

TPCA8106 ✩

TPCA8107-H

TPCA8108

P-ch

Single

20

TPCA8104

20

U-MOSV-H

TPCA8A05-H ✩

TPCA8A02-H ✩

TPCA8A08-H ✩

TPCA8A04-H ✽✩

30

MOSBD

✩: No protection Zener diode between gate and source ✽: Under development

DPAK Series ... [Part Number:TKxxPxxxM1]

■ Features

• High-current, thermally enhanced package

■ Product Offerings

RDS(ON) Max (mΩ)

Absolute Maximum Ratings

Circuit

Q

g

Typ.

C

iss Typ.

(pF)

Part Number

Series

Configuration

(nC)

9.4

13.3

29

V^DSS(V) VGSS (V)

ID (A)

40

10 V

10.8

7.5

4.5 V

14.4

9.8

TK40P03M1✩

TK50P03M1✩

TK40P04M1✩

TK50P04M1✩

30

40

20

1150

1700

1920

2600

U-MOSVI-H

50

N-ch

Single

40

10.3

8.7

13.4

10.2

50

38

✩: No protection Zener diode between gate and source

35

Low-VDSS MOSFETs (in Small SMD Packages)

4

4-7 Standard MOSFET Series (ID < 500 mA)

Single MOSFETs

Absolute Maximum Ratings

Package

S-Mini

USM

UFM

SSM

(SOT-416)

VSEM

CST3

R

DS(ON)

(SOT-346)

(SOT-323)

(SOT-723)

Typ.

V

th

VGS

(V)

2925 size, 3-pin 2021 size, 3-pin 2021 size, 3-pin 1616 size, 3-pin 1212 size, 3-pin 1006 size, 3-pin

Polarity

V

DSS

V

GSS

ID

(Max)

(V)

(V) (mA)

(Ω)

20

30

50

60

10 180

10 100

10 500

—

SSM3K35FS

SSM3K16FS

SSM3K36FS

SSM3K43FS

SSM3K35MFV

SSM3K16FV

SSM3K36MFV

SSM3K35CT

SSM3K16CT

0.4 to 1.0

0.6 to 1.1

0.35 to 1.0 0.95 (1.52) 1.5

0.7 to 1.3

0.6 to 1.1 0.85 (1.20) 2.5

0.8 to 1.5

0.5 to 1.5

1.1 to 1.8

0.9 to 1.5

2.0 to 3.5

1.0 to 2.5

1.5 to 3.1

5 (20)

5.2(15)

1.2

1.5

SSM3K16FU

—

SSM3K36TU

—

10

100

—

SSM3K03FV

**SSM3K04FV

4 (12)

2.5

**SSM3K04FU

SSM3K05FU

SSM3K15FU

—

**SSM3K04FS

12 400

20 100

20 200

20 400

—

SSM3K15F

—

2SK2009

—

SSM3K15FS

SSM3K44FS

SSM3K15FV

SSM3K44MFV

SSM3K15CT

4.0 (7.0) 2.5

1.2 (2.0) 2.5

0.8 (1.2) 4.0

N-ch

—

SSM3K09FU

SSM3K17FU

—

7

100

—

22 (40)

0.6 (1.0)

2.5

10

20 200

2SK1062

SSM3K7002F

SSM3K7002FU

2.2 (3.3) 4.5

1.8 (3.3) 4.5

2.1 (3.3) 4.5

20 200 SSM3K7002AF SSM3K7002AFU

20 200 SSM3K7002BF SSM3K7002BFU

—

SSM3K7002BFS

–

20

30

50

60

10

8

12

20

–

100

330

200

100

200

—

SSM3J16FU

—

SSM3J05FU

SSM3J15FU

—

SSM3J09FU

2SJ344

—

SSM3J35FS

SSM3J16FS

SSM3J36FS

SSM3J35MFV

SSM3J16FV

SSM3J36MFV

SSM3J35CT –0.4 to –1.0 11 (44)

SSM3J16CT –0.6 to –1.1 18 (45)

–

1.2

1.5

2.5

4.0

–

SSM3J36TU

—

–0.3 to –1.0 2.23 (3.6)

–0.6 to –1.1 3.2 (4.0)

—

P-ch

SSM3J15F

2SJ305

—

2SJ343

2SJ168

SSM3J15FS

SSM3J15FV

SSM3J15CT –1.1 to –1.7 14 (32)

—

–0.5 to –1.5 2.4 (4.0)

–1.1 to –1.8 3.3 (4.2)

–0.8 to –2.5 20 (50)

–2.0 to –3.5 1.3 (2.0)

–

7

–

50

200

20

–10

**: Built-in 1-MΩ gate-source resistor

Dual MOSFETs

Absolute Maximum Ratings

Package

US6

UF6

USV

ES6

ESV

CST6D

RDS(ON)

(SOT-363)

(SOT-353)

(SOT-563)

(SOT-553)

Typ.

V^th

(V)

V^GS

(V)

Constituent

Devices

Polarity VDSS V^GSS

I^D

2021 size, 6-pin 2021 size, 6-pin

2021 size, 5-pin 1616 size, 6-pin

1616 size, 5-pin 1009 size, 6-pin

(Max)

(V)

(V) (mA)

(

Ω)

20

30

50

60

–20

–30

20

–20

20

–20

20

10 180

10 100

10 250

10 500

0.4 to 1.0

0.6 to 1.1

0.35 to 1.0 3.07 (5.6) 1.5

0.35 to 1.0 0.95 (1.52) 1.5

0.7 to 1.3

0.6 to 1.1 0.85 (1.2) 2.5

5 (20)

5.2 (15)

1.2

1.5

SSM3K35FS×2

SSM3K16FU×2

—

SSM6N35FU

SSM6N16FU

—

SSM6N35FE

SSM6N16FE

—

SSM5N16FU

SSM5N16FE

—

SSM6N37CTD

SSM3K36FS×2

SSM3K43FS×2

SSM3K03FE×2

SSM3K04FU×2

SSM3K05FU×2

SSM3K15FU×2

SSM3K44FS×2

SSM3K09FU×2

SSM3K17FU×2

—

SSM6N36TU

SSM6N36FE

—

SSM6N43FU

—

10

100

4 (12)

2.5

SSM6N03FE

SSM5N03FE

**SSM6N04FU

SSM6N05FU

SSM6N15FU

SSM6N44FU

SSM6N09FU

SSM6N17FU

SSM6N7002FU

SSM6N7002AFU

SSM6N7002BFU

SSM6P35FU

SSM6P16FU

—

N-ch×2

12 400

20 100

20 400

SSM5N05FU

SSM5N15FU

0.8 to 1.5

1.1 to 1.8

0.9 to 1.5

1.0 to 2.5

1.5 to 3.1

–0.4 to –1.0 11 (44) –1.2

–0.6 to –1.1 18 (45) –1.5

–0.3 to –1.0 2.23 (3.6) –1.5

–0.6 to –1.1 3.2 (4.0) –2.5

–1.1 to –1.7 14 (32) –2.5

–1.1 to –1.8 3.3 (4.2) –4.0

0.4 to 1.0

–0.4 to –1.0 11 (44) –1.2

0.6 to 1.1 5.2 (15) 1.5

–0.6 to –1.1 18 (45) –1.5

0.35 to 1.0 0.95 (1.52) 1.5

–0.3 to –1.0 2.23 (3.6) –1.5

0.6 to 1.1 0.85 (1.2) 2.5

–0.6 to –1.1 3.2 (4.0) –2.5

4.0 (7.0) 2.5

0.8 (1.2) 4.0

SSM6N15FE

SSM6N44FE

SSM5N15FE

—

7

100

22 (40)

2.5

20 200

10 –100

2.2 (3.3) 4.5 SSM3K7002FU×2

1.8 (3.3) 4.5 SSM3K7002AFU×2

2.1 (3.3) 4.5 SSM3K7002BFU×2

—

SSM6N7002BFE

SSM6P35FE

SSM6P16FE

SSM6P36FE

—

SSM3J35FS×2

SSM3J16FU×2

SSM3J36FS×2

SSM3J05FU×2

SSM3J15FU×2

SSM3J09FU×2

SSM3K35FS

+SSM3J35FS

SSM3K16FS

+SSM3J16FS

SSM3K36FS

+SSM3J36FS

SSM3K05FU

+SSM3J05FU

SSM3K09FU

+SSM3J09FU

—

SSM5P16FU

—

SSM5P05FU

SSM5P15FU

—

SSM5P16FE

8

–330

SSM6P36TU

—

P-ch×2

12 –200

20 –100

20 –200

10 180

10 –100

10 100

10 –100

10 500

SSM6P05FU

SSM6P15FU

SSM6P09FU

—

SSM5P15FE

—

SSM6P15FE

—

5 (20)

1.2

SSM6L35FU

—

SSM6L35FE

SSM6L16FE

SSM6L36FE

—

N-ch+

P-ch

—

SSM6L36TU

–20

20

–20

30

8

–330

12 400

12 –200

20 400

20 –200

SSM6L05FU

SSM6L09FU

—

1.1 to 1.8

–1.1 to –1.8 3.3 (4.2) –4.0

0.8 (1.2) 4.0

—

–30

**: Built-in 1-MΩ gate-source resistor

36

Low-VDSS, High-Qg MOSFETs

5

5-1 TO-220SM(W) Series

The TO-220SM(W) package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a

high current-carrying capability.

■ Features

• Achieves low ON-resistance, low package inductance and low thermal resistance due to the use of Cu connectors.

• Achieves a high current-carrying capability due to the use of a wide source terminal (I^D(DC) = 150 A max)

• AEC-Q101-qualified at a channel temperature (Tch) of 175˚C

• Thin package: 3.7-mm (max) thick, much thinner than the previous TO-220SM package with a thickness of 4.7 mm (max)

■ Characteristics of the WARP Series

<TO-220SM>

<TO-220SM(W)>

Low ON-resistance

Low package inductance

Low thermal resistance

Cu connectors

■ Package

<Previous>TO-220SM

■ Comparison of the Source Lead Temperature

<New>TO-220SM(W)

250

200

Front View

Approx. twofold

current drive

capability

150

100

50

Predecessors

TO-220SM(W)

0

20

40

60

80

100

120

140

160

D

Drain Current, I (A)@180 Seconds

■ Product Offerings

R^DS(ON)Max (mΩ)

V^GS= 10 V

Absolute Maximum Ratings

Ciss Typ.

(pF)

Q^gTyp.

(nC)

Part Number

Series

V^DSS(V)

VGSS (V)

20

I^D(A)

VGS = 6 V

–60

40

–120

8

—

11500

258

102

105

166

190

98

TJ120F06J3

TK100F04K3

TK100F04K3L

TK150F04K3

TK150F04K3L

TK100F06K3

TK130F06K3

TK50F15J1

U-MOSIII

U-MOSIV

U-MOSIII

20

—

4.5

—

100

150

100

130

50

3

4500

4980

7500

9400

4500

8400

4300

40

20

40

2.1

5

40

3.2

—

60

—

170

75

3.4

30

150

—

37

Low-VDSS, High-Qg MOSFETs

5

5-2 U-MOS (Trench Type) Series

Fabricated using a trench structure, the U-MOS Series ultra-high integration density and thus

Source

Gate

Source

Gate

Planar Structure

Trench (U-MOS) Structure

Poly Si

N

N⁺

P

N

P

N

N⁺

Drain

■ Features

• High density through the use of submicron technology

• 60% reduction in RDS (ON) by per unit area (as compared with the maximum RDS (ON) of L²-π-MOSV)

• Guaranteed avalanche capability and improved di/dt rate

■ Product Offerings

R^DS(ON)Max (mΩ)

Absolute Maximum Ratings

VDSS (V) VGSS (V) I^D(A) PD (W)

Part

Number

Q^gTyp.

(nC)

Applications

Package

PW-Mold

New PW-Mold2

TPS

SOP Advance

TO-220SIS

TO-220SM(W)

TO-220SIS

TO-220NIS

TO-220SM

TO-3P(N)

TFP

Series

10 V

6 V

4.5 V

4 V

–60

–100

30

20

–5

–40

–70

–120

–20

5

20

1.2

45

54

300

35

170

16

8.0

90

89

16

3.8

5.6

3.5

3.0

2.1

100

26

12.5

5.8

8.0

5.8

7.0

40

—

4.5

—

3.2

—

10

—

99

28

8.3

—

8.0

—

35

—

10

—

250

24

—

15

2SJ668

2SJ681

2SJ669

TPCA8104

TJ70A06J3

TJ120F06J3

TJ20A10M3 ✩

2SK3754

2SK3846

2SK3847

TK70J04J3

TK70X04K3 ✩

TK70X04K3

motor drive

Solenoids

Lamp drivers

DC-DC converters

U-MOSIII

90

246

258

120

2.5

40

210

62

LCD backlight inverter

U-MOSVI

U-MOSIII

25

40

26

25

40

32

30

40

70

150

80

U-MOSIV

U-MOSIII

62

Z

40

70

80

TFP

2SK3843

40

60

75

80

125

200

300

20

210

100

102

105

166

190

15

36

91

196

62

196

200

34

59

75

TK80X04K3 ✩

TK100F04K3 ✩

TK100F04K3L

TK150F04K3 ✩

TK150F04K3L

2SK4017

2SK4033

TK30A06J3A

2SK3662

2SK3844

TK70X06K3 ✩

2SK3845

2SK3842

2SK4034

100

150

5

TO-220SM(W)

New PW-Mold2

New PW-Mold

TO-220SIS

TO-220NIS

TFP

TO-3P(N)

TFP

TO-3P(N)

TO-220SIS

TFP

U-MOSIV

—

motor drive

Solenoids

Lamp drivers

DC-DC converters

150

—

19

—

60

5

20

60

30

25

U-MOSIII

60

35

60

45

60

70

80

U-MOSIV

U-MOSIII

60

75

100

150

70

75

70

25

40

50

125

150

25

U-MOSIII

U-MOSIV

2SK3940

TK25A10K3 ✩

TK40X10J1

TK50F15J1

LCD backlight inverter

125

300

20

30

U-MOSIII

TO-220SM(W)

✩: No protection Zener diode between gate and source

38

5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V)

■ Features

• Low ON-resistance achieved by high density through the use of submicron technology

• Guaranteed avalanche capability

• High power dissipation achieved by having the series housed in the TO-220(W) package with an

exposed heatsink on the bottom of the package

■ Comparisons Between Synchronous Rectification MOSFETs

TK80A08K3

TK60A08J1

Min

—

Typ.

—

Max

1

Min

—

Typ.

—

Max

10

Unit

μA

V

Characteristic

Symbol

+I^GSS

Test Conditions

V^GScondition*, VDS = 0 V

V^DS= 75 V, VGS = 0 V

I^D= 10 mA, VGS = 0 V

I^D= 10 mA, VGS = –20 V

V^DS= 10 V, ID = 1 mA

Gate leakage current

-IGSS

—

–1

10

—

–10

10

Drain cut-off current

IDSS

—

V (BR) DSS

V (BR) DSX

Vth

75

50

2.0

—

75

60

1.1

—

Drain-source

breakdown voltage

—

V

Gate threshold voltage

—

4.0

—

2.3

V

Drain-source

ON-resistance

mΩ

pF

V

RDS (ON)

Ciss

V^GS= 10 V, ID = 40 A

—

3.6

8200

770

4.5

—

6.2

5450

320

7.8

—

Input capacitance

V^DS= 10 V, VGS = 0 V

f = 1 MHz

Reverse transfer

capacitance

Crss

—

I^DR= 80 A, VGS = 0 V

Forward voltage

–0.9

–1.2

–0.9

–1.2

V^DSF

*: Test conditions: TK80A08K3: VGS = 20 V, TK60A08J1: VGS = 16 V

■ Efficiency Test Circuit

130-W(19.5-V/6.7-A) Flyback Converter

VIN = 100 Vac

90.5

Synchronous

Rectifier

U-MOSIV TK80A08K3

U-MOSIII-H TK60A08J1

3 paralleled 100-V/30-A Schottky barrier diodes

90.0

89.5

89.0

88.5

88.0

+

–

VOUT

PFC

+

–

+

–

MAIN

VIN

TK60A08J1

vs

TK80A08K3

0

1

2

3

4

5

6

7

Pout (W)

Efficiency approx. 1% higher than Schottky barrier diodes

■ Product Offerings

R

DS(ON) (mΩ) @VGS = 10 V

Q

_g(nC) Typ.

Absolute Maximum Ratings

Qsw (nC) Typ.

Package

Part Number

Series

VDSS (V)

V^GSS(V)

20

I^D(A)

PD (W)

Typ.

Max

VDS = VDSS x 0.8, ID = ID (DC)

TK70D06J1

TK70A06J1

U-MOSIII-H

U-MOSIV

60

75

70

60

40

80

140

45

5.1

6.2

7.0

3.6

6.4

7.8

9.0

4.5

87

30

27

—

80

TO-220(W)

TO-220SIS

TO-220(W)

TO-220SIS

TO-220(W)

20

TK60D08J1

TK60A08J1

TK40A08K3

TK80D08K3

140

45

86

20

86

20

42

80

100

175

20

U-MOSIV

20

U-MOSIV

TK80A08K3

TK40A10K3

TK40D10J1

TK40A10J1

TK40X10J1

75

80

40

3.6

11.5

15

4.5

15

20

175

85

76

59

80

40

25

TO-220SIS

TO-220(W)

TO-220SIS

TFP

20

U-MOSIV

100

20

100

40

U-MOSIII-H

20

125

20

TK55D10J1

100

150

55

50

140

45

8.4

22

10.5

30

110

75

33

TO-220(W)

TO-220SIS

TFP

20

TK55A10J1

TK50X15J1

20

125

39

Mid- and High-VDSS MOSFETs

6

6-1 π-MOSVII Series (VDSS = 450 V to 650 V)

The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip

design and is available with a greatly wider range of electrical characteristics.

■ Features

• 40% reduction in Qg from π-MOSVI due to optimized chip design

• Available in 50-V steps of VDSS and in finer steps of RDS(ON).

• Rated avalanche and reverse recovery current capabilities

■ Performance Comparisons Between

π-MOSVII and π-MOSVI Devices (600 V/10 A)

Series

Part Number

Ratings

π-MOSVI

2SK3569

π-MOSVII

TK10A60D

600 V/10 A

TO-220SIS

600 V/10 A

TO-220SIS

Package

Min Typ. Max Min Typ. Max Unit

Characteristic

Gate leakage current

Drain cut-off current

Symbol

I^GSS

Test Conditions

μA

V

—

25

—

1

100

—

10

100

—

V^GScondition*, VDS = 0 V

V^DS= 600 V, VGS = 0 V

IDSS

Drain-source breakdown voltage V(BR)DSS

I^D= +10 mA, VGS = 0 V

V^DS= 10 V, ID = 1 mA

600

2.0

—

600

2.0

—

Gate threshold voltage

Drain-source ON-resistance

Total gate charge

Vth

RDS(ON)

Qg

4.0

0.75

—

4.0

V

V^GS= 10 V, ID = 5 A

—

42

—

0.75

—

Ω

V^DD= 400 V, VGS = 10 V, ID = 10 A

I^DR=10 A, VGS = 0 V

—

nC

V

Diode forward voltage

VDSF

—

–1.7

—

–1.7

*: Testconditions: TK10A60D: VGS = 30 V, 2SK3569: VGS = 25 V

■ Efficiency Test Circuit

90%

88%

86%

84%

82%

80%

78%

76%

120-W (20-V/6-A) Flyback Converter

VIN = 100 Vac, VGS = +10, −0 V

Efficiency greater than a π-MOSVI MOSFET

Rg = 4.7 Ω

Synchronous

Rectifier

Rg = 4.7 Ω

+

–

Rg = 47 Ω

VOUT

PFC

+

–

MAIN

–

V^IN

2SK3569

TK10A60D

2SK3569

vs

TK10A60D

0

60

80

100

120

20

40

140

Pout (W)

■ Product Offerings

Absolute Maximum

Ratings

Absolute Maximum

Ratings

Equivalent

π-MOSVI

Part

Equivalent

RDS(ON) (Ω)

R^DS(ON)(Ω)

Part Number

Package

π-MOSVI

Package

Part

VDSS (V)

450

I^D(A)

13

4

V^GS= 10 V

0.46

2.0

VDSS (V)

I^D(A)

7.5

8.5

11

12

12.5

14

16

2

V^GS= 10 V

1.07

0.86

0.63

0.57

0.48

0.37

0.33

0.37

5.0

2.8

2.2

2

1.7

1.25

1

0.75

0.65

0.55

0.43

0.37

1.43

1.11

0.84

0.50

TK13A45D

TK4A50D

TK5A50D

TK6A50D

TK7A50D

TK8A50DA

TK8A50D

TK10A50D

TK11A50D

TK12A50D

TK13A50DA

TK13A50D

TK15J50D

TK15A50D

TK18A50D

TK20J50D

TK4A53D

TK5A53D

TK6A53D

TK6P53D

TK12A53D

TK12X53D

TK4A55DA

TK4A55D

TK5A55D

TK6A55DA

2SK3743

TO-220SIS

TO-3P(N)

TO-220SIS

TO-3P(N)

TO-220SIS

D-PAK

TK8A55DA

TK9A55DA

TK11A55D

TK12A55D

TK12J55D

TK13A55DA

TK14A55D

TK16A55D ✽

TK16J55D

TK2Q60D

—

TO-220SIS

TO-3P(N)

TO-220SIS

TO-3P(N)

New PW-Mold 2

TO-220SIS

—

5

6

7

7.5

8

1.5

1.4

1.2

1.0

0.85

0.72

0.6

0.52

0.47

0.4

0.3

0.27

1.7

1.5

1.3

2SK3563

—

550

2SK3561

10

11

12

12.5

13

15

18

20

4

—

500

—

2SK3568

—

2SK4012

2SK4107

2SK3934

—

2SK4108

—

2SK3563

—

2SK4002

TK3A60DA

TK4A60DA

TK4A60DB

TK4A60D

2.5

3.5

3.7

4

—

2SK3567

—

TK6A60D

6

2SK3562

2SK3667

2SK3569

600

TK8A60DA

TK10A60D

TK11A60D

TK12A60D

TK13A60D

TK15A60D

TK5A65D

TK6A65D

TK8A65D

TK12A65D ✽

7.5

10

11

12

13

15

5

—

6

12

3.5

4

525

550

—

2SK3797

0.58

2.45

1.9

1.7

1.48

TO-220SIS

TFP

TO-220SIS

—

2SK3398

—

6

8

650

—

5

12

5.5

✽: Under development

40

6-2 Super-Junction DTMOS Series (VDSS = 600 V, 650 V)

The DTMOS devices employ a new super-junction structure that enables an ultra-low ON-resistance with the maximum

VDSS rating of 600 V. The DTMOS Series helps reduce the power consumption and size of electronic equipment.

■ Features

• Low ON-resistance TK40J60T: 80 mΩ (max) @VGS = 10 V, ID = 20 A

• Low gate charge TK20A60U: Qg = 27 nC typ., 600 V / 20 A

• The rugged internal drain-source diode is not damaged at di/dt = 500 A/μs (@V^DS= 400 V, 150˚C).

■ Product Offerings

R

DS(ON) Max (Ω)

Absolute Maximum Ratings

V^DSS(V)

ID (A)

Qg Typ.

(nC)

Ciss Typ.

(pF)

Part Number

Package

Series

V^GS= 10 V

TK12A60U

TK12D60U

TK12J60U

TK15J60T

TK15A60U

TK15D60U

TK15J60U

TK20A60T

TK20D60T

TK20J60T

TK20A60U

TK20D60U

TK20J60U

TK40J60T

TK50J60U ✽

TK13A65U

TO-220SIS

TO-220(W)

TO-3P(N)

TO-220SIS

TO-220(W)

TO-3P(N)

TO-220SIS

TO-220(W)

TO-3P(N)

TO-220SIS

TO-220(W)

TO-3P(N)

TO-220SIS

12

15

0.4

0.3

14

21

17

720

1200

950

DTMOSII

DTMOSI

DTMOSII

600

20

0.19

30

27

1580

1470

DTMOSI

DTMOSII

20

40

50

13

0.08

0.065

0.38

67

70

17

3900

4300

950

DTMOSI

DTMOSII

650

✽: Under development

■ Performance Comparisons Between the New DTMOS and Conventional

MOSFET (π-MOSVI) Devices (600 V/20 A)

■ Figure-of-Merit (FOM) Comparison

Ron x Qg, the product of ON-resistance

and total gate charge, is reduced by 62%,

compared with the conventional MOSFETs

with the same chip size.

DTMOSII

TK20J60U

π-MOSVI

2SK3911

600 V/20 A

Series

Part Number

Ratings

*Ron x Qg is a figure-of-merit index for the switching speed

of MOSFETs.

600 V/20 A

Characteristic

Min Typ. Max Min

Typ. Max Unit

Symbol

I^GSS

Test Conditions

Gate leakage current

Drain cut-off current

—

1

—

10

μA

14

V^GScondition*, VDS = 0 V

V^DS= 600 V, VGS = 0 V

62%

reduction

IDSS

100

12

10

8

Drain-source

15%

reduction

V^(BR)DSS

ID = 10 mA, VGS = 0 V

V^DS= 10 V, ID = 1 mA

600

3.0

—

600

2.0

—

V

Ω

breakdown voltage

Gate threshold voltage

Vth

5.0

4.0

Drain-source

ON-resistance

R^DS(ON)

V

GS = 10 V, I

D

= 10 A

0.165 0.19

0.22 0.32

6

V

DD = 400 V, VGS = 10 V

4

Total gate charge

Qg

—

27

—

60

—

nC

V

ID

= 20 A

2

Diode forward voltage

V^DSF

I

DR = 20 A, VGS = 0 V

—

–1.7

0

*: Test conditions: TK20J60U: VGS = 30 V, 2SK3911: VGS = 25 V

π-MOSVI

DTMOS

I

DTMOSII

■ Performance Characteristics of the New DTMOS Series

TK20A60U Electrical Characteristics

Qg

Avalanche Breakdown

Internal Diode Reverse Recovery

VDD = 90 V, L = 1 mH

VGS = 15 V, Rg = 25 Ω, 25˚C

VDD = 400 V, di/dt = 500 A/μs

I^DR= 20 A, VGS = 0 V, 150˚C

VDD: 400 V, ID = 20 A, 25˚C

t: 100 ns/div

t: 10 μs/div

VGS: 2 V/div

VGS: 20 V/div

Qg: 27nC

Not damaged at

500 A/μs @150°C

Qg: 4 nC/div

ID: 10 A/div

VDS: 200 V/div

20 A

IF: 20 A/div

VDS:100 V/div

VDS: 100 V/div

41

Mid- and High-VDSS MOSFETs

6

6-3 High-speed π-MOS Series (VDSS = 450 V to 600 V)

To support the development of high-efficiency equipment, Toshiba has developed two series of high-speed power

MOSFETs: a high-speed switching series for AC adapters and switching power supplies; and a high-speed diode series for

motor controllers and inverter circuits.

• MACH Series: Achieves a higher switching speed than the existing π-MOS Series, which is currently well established in the market.

• High-Speed Diode Series: Achieves a higher internal diode speed by using lifetime control.

■ Product Offerings

• MACH Series

R^DS

Qg

Typ.

(nC)

(ON)

Max

Absolute Maximum Ratings

Standard Type

Series

Applications

Part Number

Package

V^GS

(V)

I^D

(A)

VDSS (V)

I^D(A)

P^D(W)

(Ω)

2SK3310

2SK3309

2SK3743

2SK3403

2SK3312

2SK3437

2SK3399

2SK3907

2SK3911

450

600

500

600

10

13

6

10

23

20

40

65

40

100

65

80

100

150

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-220FL/SM

TO-3P(N)

0.65

0.4

1.25

1

0.75

0.23

0.32

10

5

6

3

5

11.5

10

23

34

25

28

35

60

2SK3126

—

MACH-I

MACH-II

AC adapters

Switching power

supplies

2SK2777

2SK2996

2SK2866

—

TO-3P(N)

—

• High-Speed Diode Series (HSD Series)

R^DS

trr

Typ.

(ns)

(ON)

Max

Absolute Maximum Ratings

Standard Type

Applications

Part Number

Package

V^GS

(V)

I^D

(A)

VDSS (V)

I^D(A)

P^D(W)

(Ω)

2SK3868

2SK3417

2SK4042

2SK3313

2SK3314

2SK3131

2SK3936

2SK3947

2SK4015

2SK4016

2SK3906

500

600

5

8

35

50

40

TO-220SIS

TO-220FL/SM

TO-220SIS

TO-220NIS

TO-3P(N)

TO-3P(L)

TO-3P(N)

TO-220SIS

TO-3P(N)

1.7

1.8

10

2.5

4

6

7

25

11.5

3

5

6.5

10

150

60

185

90

105

380

150

170

160

400

2SK3563

2SK2991

2SK3561

2SK2842

2SK2698

2SK3132

2SK3907

2SK3562

2SK3569

2SK3911

2SK3797

0.97

0.62

0.49

0.11

0.25

1.4

0.86

0.50

0.33

12

15

50

23

6

10

13

20

40

Motor control

Inverters

Switching power

supplies

150

250

150

40

45

50

150

■ Characteristics of the MACHII Series

40% reduction in Qg losses

■ Characteristics of the High-Speed Diode Series

Faster internal diode

600-V MACH-II 2SK3911

2SK3313 (High Speed)

ID = 10 A/div

Qg = 56 nC

0

VDS: 100 V/div

VGS: 2 V/div

10 nC/div

200 ns/div

40% Qg

reduction

Higher Speed

Standard Series

2SK2842 (Standard Series)

ID = 10 A/div

Qg = 92 nC

0

VDS: 100 V/div

VGS: 2 V/div

10 nC/div

200 ns/div

42

6-4 π-MOS Series

■ π-MOSVI Series (V^DSS= 450 V to 600 V)

R

DS(ON) Max (Ω)

Absolute Maximum Ratings

Q

(nC)

g

Typ.

C

iss Typ.

(pF)

Equivalent

Predecessor Part

Series

Part Number

Package

VDSS (V)

ID

(A)

2

V

GS = 10 V

2.45

0.68

0.25

0.26

1.5

9

8

330

270

1050

3100

550

2SK3543

2SK3407

—

TO-220SIS

TO-3P(N)

TO-220SIS

DP

New Pw-Mold

TO-220SIS

TO-3P(N)

TO-220SIS

TO-3P(N)

2SK3757

2SK3766

2SK3869

2SK3935

2SK3904

2SK3563

2SK3863

2SK4103

2SK3561

2SK3568

2SK4012

2SK3934

2SK4107

2SK3905

2SK4108

2SK3767

2SK3567

2SK3562

2SK3667

2SK3569

2SK3797

2SK3903

2

28

62

16

28

42

50

62

48

62

70

9

17

28

33

42

62

450

10

17

19

5

—

2SK2662

—

2SK3863

2SK2543

2SK2842

—

1.5

0.85

0.52

0.4

0.3

0.4

0.31

0.27

4.5

2.2

1.25

1.0

0.75

0.43

0.44

550

1050

1500

2400

3100

2450

3100

3400

320

8

12

13

15

17

20

2

500

π-MOSVI

—

2SK2698

—

2SK2837

2SK3067

2SK2750

2SK2545

2SK2996

2SK2843

—

550

3.5

6

1050

1300

1500

3150

3100

600

7.5

10

13

14

—

■ π-MOSIV Series (VDSS = 800 V to 900 V)

R

DS(ON) Max (Ω)

Absolute Maximum Ratings

Q

(nC)

g

Typ.

C

iss Typ.

(pF)

Equivalent

Predecessor Part

Series

Part Number

Package

VDSS (V)

I

D

(A)

VGS = 10 V

7

1.7

6.4

4.3

3.5

2.5

2.0

1.3

1.6

1.3

0.95

TO-3P(N)

2SK3633

2SK3879

2SK3880

2SK4013

2SK3566

2SK3564

2SK3798

2SK3565

2SK3742

2SK3700

2SK4014

2SK4115

2SK3799

2SK3473

2SK3878

2SK4207

35

45

12

17

26

28

25

28

45

60

38

60

45

2SK2746

—

1500

1400

470

6.5

6

2.5

3

4

5

6

7

8

9

13

TO-220FL/SM

TO-3P(N)IS

TO-220SIS

TO-3P(N)

TO-220SIS

TO-3P(N)

TO-220SIS

TO-3P(N)

800

—

2SK2718

2SK2700

—

2SK2717

2SK2610

—

2SK2749

—

700

800

1150

1400

1650

2200

1450

2200

2790

π-MOSIV

900

TO-3P(N)

2SK2611

—

■ L²-π-MOSV and VI Series (VDSS = 30 V to 100 V)

R^DS(ON)(Ω)

Max

RDS(ON) (Ω)

Qg Typ.

VDSS

(V)

I^D

P^D

Part Number

Package

(A)

(W)

(nC)

Typ.

0.16

0.55

0.5

0.16

Typ.

Max

0.34

1.2

V^GS(V)

ID (A)

V^GS(V)

–4

—

4

—

4

ID (A)

–1.3

–0.5

–2.5

–10

–15

–0.5

–6

–9

—

1.3

5

6

25

0.9

0.5

0.9

25

1.2

45

100

45

100

1.5

0.9

35

60

75

25

45

100

0.9

40

30

40

18

–50

–60

–100

30

50

–5

–1

–5

–20

–30

–1

LSTM

0.19

0.73

0.7

–10

10

–2.5

–0.5

–2.5

–10

–15

–0.5

–6

–9

25

2.5

10

12

25

0.27

0.86

0.72

0.24

0.05

0.046

1.68

0.25

0.085

—

0.24

0.055

0.058

0.027

—

0.011

2SJ537

2SJ360

2SJ507

2SJ438

2SJ378

2SJ349

2SJ401

2SJ334

2SJ402

2SJ508

2SJ509

2SJ380

2SJ412

2SJ619

2SJ620

2SJ464

2SK3506

2SK2989

2SK2614

2SK2507

2SK2886

2SK3051

2SK2744

2SK2550

2SK2551

2SK2745

PW-Mini

6.5

5.6

22

90

LSTM

1.0

TO-220NIS

TPS

0.19

0.045

0.038

1.9

0.28

0.09

0.06

2.5

0.16

0.033

0.029

1.34

0.15

0.063

0.064

0.016

0.12

0.032

0.034

0.014

0.024

0.015

0.024

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-220FL/SM

PW-Mini

90

110

6.3

48

–1

LSTM

1.9

2.5

TO-220NIS

TO-220FL/SM

TFP

–12

–16

–18

45

5

20

25

45

0.21

0.09

0.02

0.15

0.046

0.02

0.03

0.02

0.030

0.011

0.0095

0.32

0.12

—

0.33

0.08

0.036

—

48

TFP

140

39

6.5

25

66

36

68

TO-220NIS

TO-3P(N)

LSTM

10

DP

TO-220NIS

TO-220FL/SM

TO-3P(N)

45

50

40

25

—

125

100

150

—

0.016

36

130

0.0072

0.007

50

10

25

43

Mid- and High-VDSS MOSFETs

6

R

Max

0.3

DS(ON) (Ω)

RDS(ON) (Ω)

V

(V)

DSS

I

D

PD

Qg Typ.

(nC)

6

5.8

12

Part Number

Package

PW-Mini

(A)

(W)

0.5

0.9

1.2

40

Typ.

0.23

Typ.

0.33

0.26

0.2

Max

0.44

0.38

0.3

V

GS (V)

10

I

D

(A)

1

V

GS (V)

ID (A)

2SK2615

2SK2961

2SK2229

2SK2782

2SK2232

2SK2311

2SK2385

2SK2233

2SK2266

2SK2376

2SK2398

2SK2173

2SK2445

2SK2267

2SK2313

2SK2962

2SK2963

2SK2200

2SK2201

2SK4018

2SK2399

2SK2400

2SK4019

2SK2391

2SK2314

2SK2789

2SK3387

60

2

4

1

60

2

0.2

0.27

0.16

0.055

0.046

0.03

0.017

0.03

0.017

0.018

0.011

0.7

1

4

1

LSTM

60

5

0.12

2.5

4

1.3

5

TPS

60

20

25

36

45

50

60

1

0.039

0.036

0.022

0.013

0.022

0.013

0.014

0.008

0.5

10

12

18

25

30

0.5

2

0.06

0.057

0.04

0.019

—

0.090

0.08

0.055

0.025

—

4

25

DP

60

35

4

12

15

25

—

25

—

30

0.5

2

38

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-3P(N)

TO-220FL/SM

TO-3P(N)

TO-3P(L)

TO-3P(N)

LSTM

60

40

4

38

60

40

4

60

100

65

4

60

4

60

100

125

150

0.9

0.5

1.3

20

4

110

60

—

4

60

0.019

—

0.025

—

110

170

6.3

13.5

22

60

—

4

60

0.012

0.65

0.36

0.35

0.22

0.09

0.015

0.95

0.45

0.3

60

4

100

150

4

1

PW-Mini

0.5

0.7

4

3

TPS

0.28

0.35

0.23

0.085

0.12

4

3

New PW-Mold

New PW-Mold2

New PW-Mold

TPS

0.28

2

4

2

3

20

0.28

2

4

2

5

20

0.17

2.5

10

15

9

4

2.5

10

15

9

5

1.2

20

0.17

0.3

4

22

5

New PW-Mold2

TO-220NIS

TO-220AB

TO-220FL/SM

TFP

0.17

0.3

4

22

20

27

18

35

0.068

0.066

0.08

0.13

0.18

4

50

75

4

50

60

4

50

100

4

57

■ π-MOSV Series (VDSS = 150 V to 250 V)

Qg

Typ.

(nC)

R

DS(ON)

Absolute Maximum Ratings

(Ω)

Applications

Part Number

Package

TO-3P(N)

TO-220NIS

New PW-Mold

TPS

New PW-Mold2

PW-Mold

TO-220NIS

LSTM

PW-Mold

TO-220NIS

TO-3P(N)

PW-Mini

TPS

TO-220NIS

New PW-Mold

New PW-Mold2

TO-220NIS

TO-220FL/SM

TFP

V

DSS

I

D

P

D

V

GS

I

D

(V)

–10

4

(A)

–5

(V)

–180

–200

–250

150

180

200

250

(A)

–10

–5

–2.5

–2

–5

–6.5

0.67

5

(W)

130

30

Typ.

Max

0.37

1.0

2SJ618

2SJ407

2SJ567

2SJ676

2SJ680

2SJ610

2SJ512

2SJ516

–

0.8

1.6

18

20

10

24

22

29

4.6

12

57

—

–2.5

–1.5

–1.0

–2.5

–3

0.5

2.5

9

2.0

20

1.3

20

30

35

0.9

20

1.6

2.55

1.25

0.8

1.85

1.0

0.6

1.0

2SK3670

2SK3205

2SK2882

2SK3497

2SK2992

2SK2835

2SK2381

2SK2920

2SK4020

2SK2350

2SK2965

2SK2382

2SK2401

2SK3625

2SK3444

2SK3176

2SK3462

2SK4022

2SK3342

2SK4021

2SK2417

2SK2914

2SK2508

2SK2598

2SK2993

2SK3994

2SK3388

2SK3445

2SK2967

2SK2995

1.7

0.5

10

0.36

0.08

—

0.12

0.15

3.5

18

10

1

5

45

130

1.5

1.3

25

5

2.2

0.5

2.5

5

5.5

10

3

0.8

0.56

0.52

0.26

0.15

0.13

0.065

0.067

0.038

1.2

10

17

30

40

44

125

12

10

20

40

100

45

100

45

132

5

20

5

20

0.4

8.5

11

15

25

30

3

30

35

45

75

100

125

150

20

DC-DC converters

Monitors

Motor controllers

0.26

0.18

0.082

0.052

1.7

12.5

15

TO-3P(N)

New PW-Mold

New PW-Mold2

New PW-Mold

New PW-Mold2

TO-220NIS

TO-220AB

TO-220NIS

TO-220FL/SM

TO-220NIS

TFP

1.5

2.5

3.5

6.5

10

15

1.7

1.0

0.5

3

20

1.2

0.8

4.5

7.5

13

20

30

20

30

20

45

60

100

45

125

150

90

0.42

0.18

0.082

0.090

0.082

0.09

0.048

0.5

0.25

0.105

0.068

TFP

TO-3P(N)

TO-3P(N)IS

15

44

■ π-MOSV Series (V^DSS= 400 V to 700 V)

Qg

Typ.

(nC)

R^DS(ON)

(Ω)

Absolute Maximum Ratings

Applications

Package

PW-Mold

TO-220FL/SM

TO-220NIS

TO-220AB

TO-220FL/SM

TFP

New PW-Mold

TPS

New PW-Mold2

TFP

Part Number

V^DSS

(V)

I^D

(A)

P^D

(W)

V^GS

(V)

ID

Typ.

Max

(A)

2SK3498

2SK2838

2SK2679

2SK2952

2SK2841

2SK2949

2SK3499

2SK3472

2SK3374

2SK4023

2SK3544

2SK2998

2SK3302

2SK3471

2SK2599

2SK3373

2SK2862

2SK2991

2SK3466

2SK2542

2SK2776

2SK3538

2SK2601

2SK3068

2SK3398

2SK2916

2SK2917

2SK3132

2SK3371

2SK4026

2SK2846

2SK2865

2SK4002

2SK4003

2SK3975

2SK3085

2SK3130

2SK2777

2SK2602

2SK3312

2SK3438

2SK2889

2SK2866

2SK2699

2SK2953

2SK3265

2SK3453

400

450

500

600

700

1

5.5

8.5

10

1

20

40

35

40

80

20

4.2

0.84

0.4

5.5

1.2

0.55

4.6

10

0.5

3

5

0.5

5

0.5

6

0.25

1

2.5

4

5

6

7

10

25

0.5

1

1.5

1.8

3

5

5.7

17

34

5

0.4

4.0

1

3.7

4.6

5

20

4.0

4.6

13

0.5

2

3

5

8

10

12

14

18

50

1

2

3

3.5

6

100

0.9

1.3

0.5

1.3

20

25

50

80

65

125

100

80

90

250

20

1.3

20

75

40

65

125

65

80

100

125

150

90

45

80

0.29

10

0.4

18

34

3.8

9

LSTM

TPS

PW-Mini

TPS

10

18

10

18

2.9

3.2

New PW-Mold

TO-220NIS

TO-220FL/SM

TO-220AB

TO-220FL/SM

TFP

TO-3P(N)

TO-220FL/SM

TFP

TO-3P(N)IS

TO-3P(L)

New PW-Mold

New PW-Mold2

TPS

New PW-Mold

New PW-Mold2

New PW-Mold

TO-220AB

TO-220NIS

TO-220FL/SM

TO-3P(N)

2.9

3.2

9

2.9

3.2

1.35

0.75

0.56

0.4

1.5

17

30

45

58

80

280

9

0.85

1.0

0.52

0.4

0.27

0.095

9.0

115-Vac

switching power supplies

Ballast inverters

0.4

Motor controllers

0.35

0.21

0.07

6.4

9

4.2

5.0

4.2

5.0

4.2

5

1.7

2.2

20

30

22

28

45

58

80

53

1.7

2.2

1.7

2.2

1.26

0.9

1.55

1.25

1.0

0.75

0.65

0.4

6

TO-220FL/SM

TFP

TO-220FL/SM

TO-220AB

TO-3P(N)

TO-3P(N)IS

TO-220NIS

TO-3P(N)IS

0.95

0.78

0.54

0.5

0.31

0.72

10

12

10

5

6

8

5

1.0

■ π-MOSΙΙΙ Series (VDSS = 800 V to 1000 V)

Qg

Typ.

(nC)

RDS(ON) (Ω)

Absolute Maximum Ratings

Applications

Package

VDSS (V)

ID (A)

P^D(W)

Typ.

Max

V^GS(V)

ID(A)

25

34

55

68

6

15

25

58

70

65

3.0

1.9

1.3

1.0

15

8.0

3.73

3.7

1.05

1.2

1.05

1.4

3.6

2.2

1.7

1.2

20

9.0

4.3

1.25

1.4

1.25

1.7

10

1.5

15

2SK2603

2SK2883

2SK2884

2SK2746

2SK2606

2SK2607

2SK3301

2SK2845

2SK2733

2SK2608

2SK2719

2SK2847

2SK3017

2SK2968

2SK2613

800

900

1000

3

5

7

8

9

1

3

8

8.5

10

8

100

75

100

150

85

150

20

40

TO-220AB

TO-220FL/SM

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

PW-Mold

3.0

3.5

4.0

0.5

1.5

4.0

4

DP

60

TO-220AB

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

100

125

85

90

150

8.0

45

MOSFET Part Numbers

7

7-1 Alphanumeric Index of Part Numbers

Main Characteristics

V^DSS

I^D

RDS(ON)

Max

V^DSS

I^D

RDS(ON)

Part Number

Series

Package

Page

Part Number

Series

Package

Page

Max

(V)

–60

(A)

–0.2

–10

–12

–14

–0.2

–14

–1

(Ω)

(V)

180

60

(A)

1

(Ω)

2SJ168

2SJ200

2SJ201

2SJ304

2SJ305

2SJ312

2SJ313

2SJ334

2SJ338

2SJ343

2SJ344

2SJ349

2SJ360

2SJ378

2SJ380

2SJ401

2SJ402

2SJ407

2SJ412

2SJ438

2SJ440

2SJ464

2SJ507

2SJ508

2SJ509

2SJ512

2SJ516

2SJ537

2SJ567

2SJ610

2SJ618

2SJ619

2SJ620

2SJ668

2SJ669

2SJ676

2SJ680

2SJ681

2SK1062

2SK1119

2SK1359

2SK1365

π

-MOSIII

S-MINI

2

0.83

0.63

0.12

4

36

–

2SK2162

π

-

MOSII

PW-Mold

TO-3P (N)

TPS

5

0.017

0.35

0.16

0.046

0.03

0.011

1.7

–

π-MOSII

TO-3P (N)

TO-3P (L)

–180

–200

–60

2SK2173 L²-

2SK2200 L²-

2SK2201 L²-

2SK2229 L²-

2SK2232 L²-

2SK2233 L²-

2SK2266 L²-

2SK2267 L²-

π-

MOSV

50

3

44

–

π-MOSII

–

100

L²-

π

-MOSIV TO-220NIS

-MOSIII

S-MINI

-MOSIV TO-220FL/SM

-MOSII

TO-220NIS

-MOSV TO-220NIS

–

MOSV New PW-Mold 100

3

–30

36

–

MOSV

MOSV TO-220NIS

MOSV

TO-3P (N)

MOSV TO-220FL/SM

TPS

60

5

L²-

π

–60

0.12

5

25

45

60

5

π

–180

–60

–

60

L²-

π

–30

–1

0.038

5

43

–

60

π-MOSII

PW-Mold

S-MINI

USM

–180

–50

MOSV

TO-3P (L)

60

π

-MOSIII

–0.05

–20

–1

50

36

43

44

43

–

2SK2274

π

-

MOSII.5

TO-220NIS

700

60

–50

50

2SK2311 L²-

2SK2313 L²-

2SK2314 L²-

π

-

MOSV TO-220FL/SM

MOSV

TO-3P (N)

MOSV TO-220AB

TO-220NIS

MOSV TO-220FL/SM

25

60

27

8.5

45

5

0.046

0.011

0.085

0.4

44

–

L²-

π

-MOSV TO-220NIS

–60

0.045

0.73

0.19

0.21

0.045

0.038

1

60

-MOSV

PW-Mini

TPS

–60

100

200

60

–60

–5

2SK2350

2SK2376 L²-

π-MOSV

-MOSV TO-220NIS

-MOSV TO-220FL/SM

–100

–60

–12

–20

–30

–5

π-

0.017

0.8

2SK2381

2SK2382

π

-

MOSV

TO-220NIS

200

60

–60

π

15

36

20

45

5

0.18

0.03

0.085

0.03

0.23

0.18

0.5

-MOSV

TO-220NIS

–200

2SK2385 L²-

2SK2391 L²-

2SK2398 L²-

2SK2399 L²-

2SK2400 L²-

π-

MOSV TO-220NIS

MOSV

TO-3P (N)

L²-

π

-MOSV TO-220FL/SM –100

–16

–5

0.21

0.19

0.8

100

60

-MOSV TO-220NIS

TO-3P (N)IS

-MOSV TO-220NIS

–60

–180

–100

–60

-MOSII

–9

MOSV New PW-Mold 100

L²-

π

–18

–1

0.09

0.7

43

44

43

44

43

38

44

38

36

–

MOSV

TPS

100

200

250

60

5

-MOSV

LSTM

PW-Mini

LSTM

2SK2401

2SK2417

2SK2445 L²-

2SK2467

2SK2507 L²-

π

-

MOSV TO-220FL/SM

15

7.5

50

9

–100

–250

–50

–1

1.9

π

MOSV

MOSII

TO-220NIS

TO-3P (N)

–1

1.9

π

-

0.018

0.8

-MOSV

TO-220NIS

LSTM

–5

1.25

0.8

π

-

TO-3P (N)IS

180

50

π

–6.5

–5

π-

MOSV TO-220NIS

25

13

8

0.046

0.25

0.85

0.03

0.011

0.25

3.2

43

44

45

43

44

45

43

44

45

43

45

44

L²-

π

-MOSV

0.19

2

2SK2508

2SK2542

2SK2550 L²-

2SK2551 L²-

π

-

MOSV

TO-220NIS

TO-220AB

TO-3P (N)

250

500

50

-MOSV

New PW-Mold

PW-Mold

TO-3P (N)

TFP

–200

–250

–180

–100

–60

–2.5

–2

π

2.55

0.37

0.21

0.09

0.17

2

π

-

MOSV

45

50

13

2

π

–10

–16

–18

–5

π

50

L²-

π

-MOSV

2SK2598

2SK2599

2SK2601

2SK2602

2SK2603

2SK2606

2SK2607

2SK2608

2SK2613

π-

MOSV TO-220FL/SM

250

500

600

800

900

1000

50

TFP

MOSV

TPS

U-MOSIII

New PW-Mold

TPS

TO-3P (N)

TO-220AB

TO-3P (N)IS

TO-3P (N)

TO-220AB

TO-3P (N)

DP

10

6

1

–60

–5

1.25

3.6

π

-MOSV

TPS

–200

–60

–2.5

–5

π

-

MOSIII

3

New PW-Mold2

S-MINI

2

π

8

1.2

U-MOSIII

-MOSIII

0.17

1

9

1.2

π

60

0.2

4

3

4.3

π

-MOSII.5

TO-220AB

TO-3P (N)

1000

100

3.8

8

1.7

5

3.8

–

2SK2614 L²-

2SK2615 L²-

π

-

MOSV

20

2

0.046

0.3

-MOSII.5 TO-3P (N)IS

1000

100

7

1.8

–

π

PW-Mini

60

2SK1381 L²-

2SK1382 L²-

π

-MOSIII

TO-3P (N)

TO-3P (L)

TO-3P (N)

TO-3P (L)

50

0.032

0.02

0.095

1

–

2SK2679

2SK2699

2SK2719

2SK2733

2SK2744 L²-

2SK2745 L²-

π

-

MOSV

TO-220NIS

TO-3P (N)

TO-220AB

TO-3P (N)

400

600

900

50

5.5

12

3

1.2

100

60

–

π

0.65

4.3

2SK1486

2SK1489

2SK1529

2SK1530

2SK1544

2SK1930

2SK2009

2SK2013

π

-MOSIII.5

300

32

–

π

-

MOSIII

1000

180

12

–

π

1

9

π

-MOSII

10

0.83

0.63

0.2

–

π

-

MOSV

45

50

8

0.02

0.0095

0.85

1.25

0.055

0.085

π

200

12

–

π

50

π

-MOSIII.5

500

25

–

2SK2776

2SK2777

2SK2782 L²-

2SK2789 L²-

π

-

MOSV TO-220FL/SM

500

600

60

π

-MOSII.5 TO-220FL/SM 1000

4

3.8

–

π

6

π

-MOSIII

S-MINI

30

0.2

1

2

36

–

π

-

MOSV

DP

20

27

π-MOSII

TO-220NIS

180

5

MOSV TO-220FL/SM

100

46

Main Characteristics

V^DSS

I^D

RDS(ON)

V^DSS

I^D

RDS(ON)

Part Number

Series

Package

TPS

Page

Part Number

Series

Package

Page

Max

(V)

200

400

900

600

900

500

600

150

800

50

(A)

5

(Ω)

(V)

250

500

600

450

500

600

200

250

700

250

500

450

900

180

400

30

(A)

20

12

10

13

5

(Ω)

2SK2835

2SK2838

2SK2841

2SK2845

2SK2846

2SK2847

2SK2862

2SK2865

2SK2866

2SK2882

2SK2883

2SK2884

π-

MOSV

2SK3388

2SK3398

2SK3399

2SK3403

π

-

MOSV

TFP

0.105

0.52

0.75

0.4

44

45

42

45

44

45

44

45

43

44

45

43

45

0.8

1.2

44

45

5.5

10

1

MOSV TO-220FL/SM

TFP

MOSV

TO-220AB

DP

0.55

9

45

MACH

TO-220FL/SM

π

-MOSIII

45

2

π-

MOSV

TPS

5

45

2SK3417 π-MOSV(HSD) TO-220FL/SM

1.8

8

π

-MOSIII

TO-3P (N)IS

TO-220NIS

1.4

45

2SK3437

2SK3438

2SK3444

2SK3445

2SK3453

2SK3462

2SK3466

2SK3471

2SK3472

2SK3473

2SK3497

2SK3498

2SK3499

2SK3506

2SK3538

2SK3544

2SK3561

2SK3562

2SK3563

2SK3564

2SK3565

2SK3566

2SK3567

2SK3568

2SK3569

2SK3625

2SK3633

2SK3662

2SK3667

2SK3669

2SK3670

2SK3700

2SK3742

2SK3743

2SK3754

2SK3757

MACH

TO-220FL/SM

TFP

10

25

20

10

3

1

3

π

-

MOSV

3.2

45

π

-

MOSV

1

2

-

MOSV New PW-Mold

5

45

TFP

0.082

0.105

1

10

18

3

MOSV

TO-220AB

TO-220NIS

0.75

0.12

3.6

42,45

44

TFP

π

-

MOSIV

TO-3P (N)IS

π

-

MOSIII TO-220FL/SM

45

π

-

MOSV New PW-Mold

1.7

5

π

-

2.2

45

MOSV

TFP

5

1.5

2SK2886 L²-

π

-MOSV TO-220NIS

PW-Mini

0.5

1

18

45

10

7.5

14

18

5

0.02

0.75

0.5

43

2SK2889

2SK2914

2SK2916

2SK2917

2SK2920

2SK2949

2SK2952

2SK2953

π-

MOSV TO-220FL/SM

600

250

500

200

400

600

60

PW-Mold

TO-3P (N)

PW-Mold

TFP

4.6

45

MOSV

TO-220AB

TO-3P (N)IS

44

π

-

MOSIV

9

1.6

0.4

45

π

-

MOSV

10

1

0.15

5.5

0.27

0.8

45

-

MOSV New PW-Mold

MOSV TO-220FL/SM

44

10

45

8

0.55

0.02

0.85

0.4

10

8.5

15

2

0.55

0.4

45

π

-

MOSVI

TO-3P (N)

TFP

MOSV

TO-220NIS

TO-3P (N)IS

LSTM

45

π

-

MOSV

500

450

500

600

500

900

600

500

600

200

800

60

45

-

TFP

13

8

2SK2961 L²-

2SK2962 L²-

2SK2963 L²-

π

-MOSV

π

-

MOSVI

MOSIV

MOSVI

TO-220SIS

0.85 40,42,43

1.25 40,42,43

0.27

0.7

44

1

LSTM

100

200

250

900

50

π

6

44

1

PW-Mini

TO-220NIS

TO-3P (N)

LSTM

5

1.5

4.3

2.5

6.4

2.2

0.52

40,42,43

43

0.7

44

11

30

10

5

2SK2965

2SK2967

2SK2968

π

-

MOSV

3

0.26

0.068

1.25

0.15

1.5

44

π

44

5

43

π

-MOSIII

45

2.5

3.5

12

10

25

7

43

2SK2989 L²-

π

-MOSV

40,43

43

5

2SK2991

2SK2992

2SK2993

2SK2995

2SK2998

2SK3017

π-

MOSV TO-220FL/SM

MOSV

PW-Mini

MOSV TO-220FL/SM

500

200

250

500

900

50

42,45

44

1

0.75 40,42,43

3.5

20

30

0.5

8.5

45

12

3.5

6

0.105

0.068

18

44

π

-

MOSV TO-220FL/SM

0.082

1.7

44

43

MOSV

TO-3P (N)IS

LSTM

44

π

-

MOSIV

TO-3P (N)

TO-220NIS

TO-220SIS

45

U

-

MOSIII

35

7.5

10

0.67

5

0.0125

1

38

π

-MOSIII

TO-3P (N)IS

1.25

0.03

0.52

2.2

45

π

-

MOSVI

600

100

150

900

450

30

40,43

–

2SK3051 L²-

π

-MOSV TO-220FL/SM

π

-

MOSVII New PW-Mold

0.125

1.7

43

2SK3068

2SK3085

2SK3130

π-

MOSV TO-220FL/SM

500

600

500

200

150

700

900

500

450

600

500

250

600

500

450

150

π

-

MOSV

LSTM

44

45

MOSV

TO-220AB

TO-220NIS

TO-3P (L)

TO-3P (N)

PW-Mold

45

π

-

MOSIV

TO-3P (N)

TO-220SIS

TO-220NIS

TO-220SIS

TFP

2.5

43

1.55

0.11

0.095

0.052

0.5

45

π

5

2.5

43

50

30

5

2SK3131 π-MOSV(HSD)

MACH

MOSIII

MOSVI

13

5

0.6

40,42

38

42

2SK3132

2SK3176

2SK3205

2SK3265

2SK3301

2SK3302

2SK3309

2SK3310

2SK3312

π-

MOSV

U

-

0.089

2.45

4.5

42,45

44

π

-

450

600

900

60

2

43

2SK3766 π-MOSVI

2SK3767 π-MOSVI

2SK3797 π-MOSVI

2SK3798 π-MOSIV

2SK3799 π-MOSIV

2SK3842 U-MOSIII

2SK3843 U-MOSIII

2SK3844 U-MOSIII

2SK3845 U-MOSIII

2SK3846 U-MOSIII

2SK3847 U-MOSIII

2

43

44

10

1

TO-220NIS

PW-Mold

2

43

1

45

π

-MOSIII

20

45

13

4

0.43 40,42,43

0.5

10

6

π-

MOSV

TPS

18

45

3.5

1.3

43

38

43

42

43

MACH

TO-220FL/SM

TO-220NIS

0.65

1.25

0.62

0.49

1

42

8

75

45

70

26

32

5

0.0058

0.0035

0.0058

0.018

0.016

1.5

42

π-

MOSV TO-220FL/SM

42,45

42

TFP

40

12

15

4.5

1

2SK3313 π-MOSV(HSD) TO-220NIS

2SK3314 π-MOSV(HSD) TO-3P (N)

TO-220NIS

TO-3P (N)

TO-220NIS

TO-220SM

DP

60

42

2SK3342

2SK3371

2SK3373

2SK3374

π

-

MOSV New PW-Mold

40

44

40

9

45

2

2SK3863

π-MOSVI

500

450

3.2

45

1

MOSV

TPS

TFP

4.6

45

2SK3868 π-MOSVI (HSD) TO-220SIS

π-MOSVI

TO-220SIS

5

1.7

2SK3387 L²-

π

-

2SK3869

10

0.68

18

0.12

44

47

MOSFET Part Numbers

7

Main Characteristics

V^DSS

I^D

R^DS(ON)

Max

V^DSS

I^D

R^DS(ON)

Part Number

Series

Package

Page

Part Number

Series

Package

Page

Max

(V)

(A)

9

(Ω)

(V)

–20

–12

–30

–20

–30

–20

–12

–20

–30

–20

–30

–20

30

(A)

–4.6

–4.4

–5

(Ω)

2SK3878

2SK3879

2SK3880

2SK3903

2SK3904

2SK3905

2SK3906

2SK3907

2SK3911

2SK3934

2SK3935

2SK3936

2SK3947

2SK3975

2SK3994

2SK4002

2SK4003

2SK4012

2SK4013

2SK4014

2SK4015

2SK4016

2SK4017

2SK4018

2SK4019

2SK4020

2SK4021

2SK4022

2SK4023

2SK4026

2SK4033

2SK4034

2SK4042

2SK4103

2SK4107

2SK4108

2SK4115

2SK4207

S3U72

TO-3P (N)

900

1.3

1.7

43

SSM3J129TU

SSM3J130TU

SSM3J132TU

SSM3J13T

SSM3J14T

SSM3J15CT

SSM3J15F

SSM3J15FS

SSM3J15FU

SSM3J15FV

SSM3J16CT

SSM3J16FS

SSM3J16FU

SSM3J16FV

SSM3J304T

SSM3J305T

SSM3J306T

SSM3J307T

SSM3J312T

SSM3J313T

SSM3J314T

SSM3J317T

SSM3J321T

SSM3J325F

SSM3J326T

SSM3J327F

SSM3J35CT

SSM3J35FS

SSM3J35MFV

SSM3J36FS

SSM3J36MFV

SSM3J36TU

SSM3J46CTB

SSM3K01T

SSM3K02T

SSM3K03FV

SSM3K04FS

SSM3K04FU

SSM3K04FV

SSM3K05FU

SSM3K09FU

SSM3K101TU

SSM3K102TU

SSM3K104TU

SSM3K105TU

SSM3K106TU

SSM3K107TU

SSM3K116TU

SSM3K119TU

SSM3K121TU

SSM3K122TU

SSM3K123TU

SSM3K124TU

SSM3K127TU

SSM3K128TU

UFM

TSM

0.046

0.0258

0.0178

0.07

0.17

32

28

36

48

28

36

28

29

36

29

π-MOSIV

π-MOSVI

MACH (HSD)

MACH

U-MOSV

U-MOSVI

U-MOSIII

U-MOSII

π-MOSVI

πMOSVI

TO-220FL/SM 800

6.5

14

19

17

20

23

20

15

17

23

6

TO-3P (N)IS

TO-3P (N)

TO-220SIS

TO-3P (N)

TO-220SIS

800

600

450

500

600

500

600

500

450

500

600

1.7

43

0.44

0.26

0.31

0.33

0.23

0.32

0.3

43

–3

43

TSM

–2.7

–0.1

–2.3

–1.7

–2.4

–5.0

–2.7

–1.6

–3.5

–3.6

–5.2

–2.0

–5.6

–3.5

–0.1

–0.33

–2

43

CST3

S-MINI

SSM

USM

VESM

CST3

SSM

USM

VESM

TSM

42

32

42

32

41,42

40,43

43

32

MACH

32

π-MOSVI

MACH (HSD)

π-MOSVI (HSD)

π-MOSV

π-MOSVI

U-MOSIII

U-MOSII

U-MOSV

U-MOSIII

U-MOSIII-H

U-MOSIII

U-MOSV

U-MOSVI

π-MOSVI

U-MOSIII

U-MOSVI

π-MOSVI

U-MOSIII

π-MOSVI

π-MOSVII

π-MOSVI

U-MOSIII

π-MOSVII

U-MOSIII

0.25

1.4

45

42

45

42

45

New PW-Mold 600

3

2.2

45

TO-220NIS

New PW-Mold2

TO-220SIS

New PW-Mold2

New PW-Mold

TFP

250

600

500

800

900

600

60

20

2

0.105

5

44

0.127

0.477

0.225

0.031

0.091

0.268

0.1

π-MOSV

40,45

45

TSM

π-MOSV

3

2.2

TSM

π-MOSV

13

6

0.4

40,43

43

TSM

π-MOSVI

π-MOSIV

π-MOSVI (HSD)

U-MOSIII

L²-π-MOSV

π-MOSV

1.7

TSM

6

2

43

TSM

10

13

5

0.86

0.5

42

TSM

42

TSM

0.107

0.046

0.155

0.0457

0.095

44

0.1

38

TSM

100

200

250

450

600

60

3

0.35

0.23

0.8

44

S-MINI

TSM

5

44

5

44

S-MINI

CST3

SSM

VESM

SSM

VESM

UFM

CST3B

TSM

4.5

3

1

44

π-MOSV

1.7

44

π-MOSV

1

4.6

45

44

π-MOSV

1

9

45

3.6

π-MOSV

5

0.1

38

3.6

U-MOSIII

π-MOSVI (HSD)

π-MOSVI

π-MOSIV

U-MOSV-H

U-MOSIV-H

π-MOSVI

U-MOSIII

U-MOSII

U-MOSIII

U-MOSII

U-MOSIII

U-MOSIV

U-MOSII

U-MOSIV

60

75

8

0.0058

0.97

1.5

38

3.6

TO-220SIS

New PW-Mold

TO-3P (N)

SOP Advance

TSM

500

900

30

42

0.103

0.12

0.2

5

43

3.2

15

20

7

0.4

40,43

43

TSM

30

2.5

0.27

2

VESM

SSM

USM

VESM

USM

UFM

20

0.1

12

20

0.1

12

13

TBD

0.95

TBD

43

20

0.1

12

35

20

0.1

12

S3W16

30

(40) (0.0035)

–

20

0.4

1.2

SSM3J01T

SSM3J02T

SSM3J05FU

SSM3J09FU

SSM3J108TU

SSM3J109TU

SSM3J110TU

SSM3J111TU

SSM3J112TU

SSM3J113TU

SSM3J114TU

SSM3J115TU

SSM3J117TU

SSM3J118TU

SSM3J120TU

–30

–20

–30

–20

–12

–20

–30

–20

–30

–20

–1.7

–1.5

–0.2

–1.8

–2

0.4

0.5

28

30

0.4

1.2

TSM

28

20

2.2

0.103

0.071

0.056

0.2

USM

4

36

20

2.6

USM

4.2

36

20

3

UFM

0.158

0.13

0.094

0.48

0.79

0.169

0.149

0.098

0.225

0.48

0.038

28

30

2.1

UFM

28

20

1.2

0.53

0.41

0.1

UFM

–2.3

–1

28

20

1.5

UFM

28

30

2.2

UFM

–1.1

–1.7

–1.8

–2.2

–2

28

30

2.5

0.074

0.048

0.123

0.028

0.12

0.123

0.36

UFM

28

20

3.2

UFM

28

20

2

UFM

28

20

4.2

UFM

28

30

2.4

UFM

–1.4

–4

28

30

2

UFM

28

30

1.5

48

Main Characteristics

V^DSS

I^D

R^DS(ON)

V^DSS

I^D

R^DS(ON)

Part Number

Series

Package

Page

Series

Package

Page

Max

(V)

30

20

50

20

30

20

30

60

30

20

30

60

20

–30

–12

–20

–30

30

12

20

30

20

(A)

3

(Ω)

(V)

30

(A)

0.1

–0.2

–0.1

–1

(Ω)

π-MOSVII

U-MOSIV

U-MOSII

π-MOSVI

π-MOSV

SSM3K12T

TSM

UFM

TSM

CST3

S-MINI

SSM

USM

VESM

CST3

SSM

USM

VESM

USM

TSM

CST3

SSM

VESM

SSM

VESM

UFM

SSM

VESM

S-MINI

USM

S-MINI

SSM

USM

S-MINI

USM

CST4

UFV

SSM5N15FE

SSM5N15FU

SSM5N16FE

SSM5N16FU

SSM5P05FU

SSM5P15FE

SSM5P15FU

SSM5P16FE

SSM5P16FU

SSM6E01TU

SSM6E02TU

SSM6E03TU

SSM6J06FU

SSM6J07FU

SSM6J08FU

SSM6J205FE

SSM6J206FE

SSM6J207FE

SSM6J21TU

SSM6J212FE

SSM6J23FE

SSM6J25FE

SSM6J26FE

SSM6J401TU

SSM6J402TU

SSM6J409TU

SSM6J50TU

SSM6J51TU

SSM6J53FE

SSM6K06FU

SSM6K07FU

SSM6K08FU

SSM6K18TU

SSM6K202FE

SSM6K203FE

SSM6K204FE

SSM6K208FE

SSM6K210FE

SSM6K211FE

SSM6K22FE

SSM6K24FE

SSM6K25FE

SSM6K30FE

SSM6K31FE

SSM6K32TU

SSM6K34TU

SSM6K403TU

SSM6K404TU

SSM6K405TU

SSM6K406TU

SSM6K407TU

SSM6L05FU

SSM6L09FU

SSM6L10TU

SSM6L11TU

ES6

US6

ES6

US6

ES6

US6

ES6

US6

UF6

US6

ES6

UF6

ES6

UF6

ES6

US6

UF6

ES6

UF6

US6

UF6

7

36

30

28

29

36

30

0.175

0.0415

0.067

7

29

36

29

36

29

30

31

36

π-MOSVI

U-MOSIII

U-MOSIV

U-MOSIII

π-MOSVI

U-MOSII

U-MOSIII

U-MOSII

U-MOSIII

U-MOSVI

U-MOSIII

U-MOSV

U-MOSIV

π-MOSVI

U-MOSII

6.0

4

SSM3K131TU

SSM3K14T

30

7

20

15

0.1

3.5

2.9

4.7

5

SSM3K15CT

SSM3K15F

20

15

–20

–30

–20

–12

–20

–30

–20

–30

–12

–20

–12

–20

–30

–20

–12

–20

20

4

7

SSM3K15FS

SSM3K15FU

SSM3K15FV

SSM3K16CT

SSM3K16FS

SSM3K16FU

SSM3K16FV

SSM3K17FU

SSM3K301T

SSM3K303T

SSM3K309T

SSM3K310T

SSM3K315T

SSM3K316T

SSM3K318T

SSM3K320T

SSM3K35CT

SSM3K35FS

SSM3K35MFV

SSM3K36FS

SSM3K36MFV

SSM3K36TU

SSM3K43FS

SSM3K44FS

SSM3K44MFV

SSM3K7002AF

SSM3K7002AFU

SSM3K7002BF

SSM3K7002BFS

SSM3K7002BFU

SSM3K7002F

SSM3K7002FU

SSM4K27CT

SSM5G01TU

SSM5G02TU

SSM5G04TU

SSM5G09TU

SSM5G10TU

SSM5G11TU

SSM5H01TU

SSM5H03TU

SSM5H05TU

SSM5H07TU

SSM5H08TU

SSM5H10TU

SSM5H11TU

SSM5H12TU

SSM5H14F

32

7

32

7

45

7

45

15

0.16

0.136

0.144

0.5

15

–1.8

–0.65

–0.8

–1.3

–0.8

–2

15

40

U-MOSIII

π-MOSVII

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIV

π-MOSVI

U-MOSIII

π-MOSVI

π-MOSV

0.8

0.056

0.12

0.031

0.028

0.0415

0.065

0.145

0.077

20

0.18

0.234

0.13

0.491

0.05

0.0434

0.16

0.26

0.23

0.145

0.225

0.0221

0.064

0.054

0.136

0.16

0.22

0.105

0.04

0.085

0.061

0.126

0.133

0.371

0.047

0.17

0.145

0.42

0.54

0.44

0.077

0.028

0.055

0.126

0.0385

0.44

1.2

6

–1.3

–3

4

2.5

4.2

0.18

0.5

0.1

0.2

0.5

–1

–3.3

–1.2

–0.5

–2.5

–2

20

1.52

7

–9.5

–2.5

–4

–1.8

1.1

1.5

1.6

4

7

30

3.3

π-MOSV

20

3.3

U-MOSIV

π-MOSVI

U-MOSIII

U-MOSII

U-MOSIII

U-MOSIII-H

U-MOSII

U-MOSIII

π-MOSVII

U-MOSIII

π-MOSVI

20

3.3

U-MOSIII

π-MOSVII

30

2.3

2.8

2

3.3

20

3.3

20

3.3

30

1.9

1.4

3.2

1.4

0.5

1.2

2

3.3

30

0.205

0.8

20

–1

UFV

20

0.16

0.24

0.13

0.213

0.403

0.45

0.3

–1

UFV

30

–1.5

–1.4

1.4

1.5

1.2

1.5

1.6

1.9

3

UFV

20

UFV

20

UFV

20

π

-MOSVII

-MOSV

UFV

60

π

UFV

30

3

U-MOSIII

U-MOSIV

UFV

20

4.2

3

0.16

0.54

0.16

0.119

0.182

0.133

0.078

12

UFV

20

UFV

20

2

UFV

30

4.4

2

UFV

60

π

-MOSV

UFV

20

0.4

0.5

π

-MOSVI

SMV

ES6

30

1.2

0.1

0.4

SSM5N03FE

SSM5N05FU

20

0.145

U-MOSIII

US6

20

1.2

49

MOSFET Part Numbers

7

Main Characteristics

V^DSS

I^D

R^DS(ON)

Max

V^DSS

I^D

R^DS(ON)

Part Number

Series

Package

Page

Part Number

Series

Package

Page

Max

(V)

30

(A)

0.5

(Ω)

(V)

(A)

100

10

11

12

130

13

12.5

13

14

150

15

16

18

20

25

2

(Ω)

UF6

ES6

US6

ES6

UF6

ES6

US6

ES6

US6

ES6

US6

UF6

ES6

US6

ES6

UF6

CST6D

UF6

ES6

US6

ES6

US6

ES6

US6

ES6

US6

ES6

US6

UF6

ES6

US6

ES6

UF6

ES6

UF6

TO-220SIS

0.145

0.143

15

30

36

30

36

30

36

30

36

30

36

30

38

37,38

TO-220SM(W)

TO-220SIS

TO-220(W)

TO-3P(N)

40

0.003

0.005

0.72

0.75

0.6

37,38

40

41

40

41

40

37

40

41

40

37

40

41

40

41

40

41

40

41

38

40

38

40

39

41

35

38,39

40

SSM6L12TU

SSM6L13TU

SSM6L16FE

SSM6L35FE

SSM6L35FU

SSM6L36FE

SSM6L36TU

SSM6L39TU

SSM6L40TU

SSM6N03FE

SSM6N04FU

SSM6N05FU

SSM6N09FU

SSM6N15FE

SSM6N15FU

SSM6N16FE

SSM6N16FU

SSM6N17FU

SSM6N24TU

SSM6N25TU

SSM6N29TU

SSM6N35FE

SSM6N35FU

SSM6N36FE

SSM6N36TU

U-MOSIII

TK100F04K3 U-MOSIV

TK100F04K3L U-MOSIV

TK100F06K3 U-MOSIV

TK10A50D π-MOSVII

TK10A60D π-MOSVII

TK11A50D π-MOSVII

TK11A55D π-MOSVII

TK11A60D π-MOSVII

TK12A50D π-MOSVII

TK12A53D π-MOSVII

TK12A55D π-MOSVII

TK12A60D π-MOSVII

TK12A60U DTMOSII

TK12D60U DTMOSII

TK12J55D π-MOSVII

TK12J60U DTMOSII

TK12X53D π-MOSVII

TK130F06K3 U-MOSIV

TK13A45D π-MOSVII

TK13A50D π-MOSVII

TK13A50DA π-MOSVII

TK13A55DA π-MOSVII

TK13A60D π-MOSVII

TK13A65U DTMOSII

TK14A55D π-MOSVII

TK150F04K3 U-MOSIV

TK150F04K3L U-MOSIV

TK15A50D π-MOSVII

TK15A60D π-MOSVII

TK15A60U DTMOSII

TK15D60U DTMOSII

TK15J50D π-MOSVII

20

0.8

40

20

0.1

60

π

-MOSVI

20

0.18

0.5

20

500

600

500

550

600

500

525

550

600

550

600

550

60

20

1.52

0.119

0.182

12

U-MOSIII

20

0.5

0.63

0.65

0.52

0.58

0.57

0.55

0.4

20

1.6

30

1.6

20

0.1

π

-MOSVI

20

0.1

12

20

0.4

1.2

30

0.4

1.2

30

0.1

7

0.4

30

0.1

7

0.57

0.4

20

0.1

15

TO-3P(N)

20

0.1

15

TFP

0.58

0.0034

0.46

0.4

50

0.1

40

TO-220SM(W)

TO-220SIS

TO-220SM(W)

TO-220SIS

TO-220(W)

TO-3P(N)

π

-MOSV

30

0.5

0.145

0.143

20

450

500

550

600

650

550

40

U-MOSIII

20

0.5

20

0.8

0.47

0.48

0.43

0.38

0.37

0.0021

0.3

20

0.18

0.5

π

-MOSVI

20

1.52

5.6

U-MOSIII

20

0.5

20

0.25

1.6

SSM6N37CTD U-MOSIII

SSM6N39TU U-MOSIII

SSM6N40TU U-MOSIII

SSM6N42FE U-MOSIII

SSM6N43FU U-MOSIII

SSM6N44FE π-MOSVI

SSM6N44FU π-MOSVI

20

0.119

0.182

0.26

1.52

7

40

30

1.6

500

600

500

600

550

500

600

500

600

100

600

60

20

0.77

0.5

0.37

0.3

20

30

0.1

0.3

30

0.1

7

0.4

60

0.2

3.3

TO-3P(N)

0.28

0.3

SSM6N7002AFU

π-MOSV

TK15J60T

DTMOSI

60

0.2

3.3

TO-3P(N)

SSM6N7002BFE U-MOSIV

SSM6N7002BFU U-MOSIV

TK15J60U DTMOSII

TK16J55D π-MOSVII

TK18A50D π-MOSVII

TK20A60T DTMOSI

TK20A60U DTMOSII

TK20D60T DTMOSI

TK20D60U DTMOSII

TK20J50D π-MOSVII

60

0.2

3.3

TO-3P(N)

0.37

0.27

0.19

0.27

0.19

0.04

5

60

0.2

3.3

TO-220SIS

TO-220(W)

TO-3P(N)

SSM6N7002FU

π-MOSVI

–20

–30

–20

–30

–20

–100

–60

–0.2

–0.1

–0.5

–0.8

–0.1

–0.33

–1.5

–1.4

–0.72

–1.2

–20

–70

–120

4

SSM6P05FU π-MOSVI

SSM6P09FU π-MOSVI

SSM6P15FE π-MOSVI

SSM6P15FU π-MOSVI

SSM6P16FE π-MOSVI

SSM6P16FU π-MOSVI

SSM6P25TU U-MOSIII

SSM6P26TU U-MOSIII

SSM6P28TU U-MOSIII

SSM6P35FE π-MOSVI

SSM6P35FU π-MOSVI

SSM6P36FE U-MOSIII

SSM6P36TU U-MOSIII

SSM6P39TU U-MOSIII

SSM6P40TU U-MOSIII

SSM6P41FE U-MOSV

SSM6P54TU U-MOSIV

4.2

32

45

TO-3P(N)

TK20J60T

DTMOSI

0.26

0.23

0.234

44

TO-3P(N)

TK20J60U DTMOSII

TK25A10K3 U-MOSIV

TO-220SIS

NewPW-Mold2

TO-220SIS

TO-220(W)

TO-3P(N)

TK2Q60D

π-MOSVII

30

2.5

40

4

0.026

2.8

TK30A06J3A U-MOSIII

TK3A60DA π-MOSVII

TK40A08K3 U-MOSIV

TK40A10J1 U-MOSIII-H

TK40A10K3 U-MOSIV

TK40D10J1 U-MOSIII-H

44

600

75

3.6

0.009

0.015

0.08

0.0108

0.0103

0.02

2

3.6

100

600

30

0.213

0.403

0.3

TK40J60T

DTMOSI

0.228

0.09

0.008

DPAK

TK40P03M1 U-MOSVI-H

TK40P04M1 U-MOSVI-H

TK40X10J1 U-MOSIII-H

DPAK

40

TJ20A10M3

TJ70A06J3

U-MOSVI

U-MOSIII

TFP

100

500

TO-220SM(W) –60

TO-220SIS

TJ120F06J3 U-MOSIII

TK4A50D

π-MOSVII

50

Main Characteristics

V^DSS

I^D

R^DS(ON)

V^DSS

I^D

R^DS(ON)

Part Number

Series

Package

Page

Part Number

Series

Package

Page

Max

(V)

525

550

600

150

30

(A)

4

(Ω)

(V)

30

(A)

18

13

11

7.5

11

13

18

11

15

17

18

12

17

13

18

16

13

11

13

12

9

(Ω)

TO-220SIS

TO-220SM(W)

DPAK

1.7

1.9

40

37,38

35

39

40

39

40

39

38

–

SOP-8

0.0046

0.009

0.017

0.027

0.009

–

π-MOSVII

U-MOSIII

U-MOSVI-H

U-MOSIII-H

π-MOSVII

U-MOSIII-H

π-MOSVII

U-MOSIII-H

U-MOSIII

U-MOSIV

π-MOSVII

U-MOSIV

π-MOSVII

U-MOSIII

U-MOSIII-H

U-MOSIV

U-MOSIII

U-MOSIV

U-MOSIII-H

U-MOSV

TPC8018-H

TPC8020-H

TPC8021-H

TPC8022-H

TPC8025

TPC8026

TPC8027

TPC8028

TPC8029

TPC8030

TPC8031-H

TPC8032-H

TPC8033-H

TPC8034-H

TPC8035-H

TPC8036-H

TPC8037-H

TPC8038-H

TPC8039-H

TPC8040-H

TPC8045-H

TPC8046-H

TPC8047-H

TPC8048-H

TPC8049-H

TPC8050-H

TPC8051-H

TPC8052-H

TPC8053-H

TPC8107

TPC8109

TPC8110

TPC8111

TPC8112

TPC8113

TPC8114

TPC8115

TPC8116-H

TPC8117

TPC8118

TPC8120

TPC8122

TPC8123

TPC8207

TPC8208

TPC8210

TPC8211

TPC8212-H

TPC8213-H

TPC8214-H

TPC8218-H

TPC8404

U-MOSIII-H

U-MOSIV

TK4A53D

TK4A55D

TK4A55DA

TK4A60D

TK4A60DA

TK4A60DB

TK50F15J1

TK50P03M1

TK50P04M1

TK50X15J1

TK55A10J1

TK55D10J1

TK5A50D

TK5A53D

TK5A55D

TK5A65D

TK60A08J1

TK60D08J1

TK6A50D

TK6A53D

TK6A55DA

TK6A60D

TK6A65D

TK6P53D

TK70A06J1

TK70D06J1

TK70J04J3

TK70X04K3

TK70X04K3L

TK70X04K3Z

TK70X06K3

TK7A50D

TK80A08K3

TK80D08K3

TK80X04K3

TK8A50D

TK8A50DA

TK8A55DA

TK8A60DA

TK8A65D

TK9A55DA

TPC6004

4

30

–

3.5

4

2.45

30

24,33

24,34

27,33

1.7

40

3.5

3.7

50

55

5

2.2

30

2

30

0.0066 27,33

0.0027 27,34

0.0043 27,34

0.0038 27,34

0.0095 27,33

U-MOSIV

0.03

30

U-MOSIV

0.0075

0.0087

0.03

30

U-MOSIV

DPAK

40

30

U-MOSIV

TFP

150

100

500

525

550

650

75

30

U-MOSIV

TO-220SIS

TO-220(W)

TO-220SIS

TO-220(W)

TO-220SIS

DPAK

0.0105

1.5

30

0.0133

24

U-MOSV-H

U-MOSVI-H

U-MOSV-H

U-MOSVI-H

U-MOSIII

30

0.0065 24,33

0.0053 24,33

0.0035 24,34

0.0032 24,34

0.0045 24,34

0.0114 24,33

30

5

1.5

30

5

1.88

30

5

1.45

30

60

6

0.0078

1.4

30

75

30

500

525

550

600

650

525

60

30

0.006

24,33

6

1.3

30

0.0097 24,33

0.0039 24,34

0.0057 24,34

0.0076 24,34

0.0069 25,34

0.0107 25,34

0.0145 25,34

0.0097 25,34

0.0115 24,34

0.0225 25,34

5.5

6

1.48

40

1.25

40

6

1.11

40

6

1.3

60

TO-220SIS

TO-220(W)

TO-3P(N)

TFP

70

7

0.0064

0.0038

0.0056

0.008

1.22

60

40

80

40

TFP

40

60

TFP

40

38

40

39

38

40

31

24,31

31

24,31

31

–

–30

–40

–30

–20

–40

–30

30

–13

–10

–8

–11

–13

–11

–18

–10

–7.5

–18

13

–18

–11

6

0.007

0.02

–

TFP

60

U-MOSIII

TO-220SIS

TO-220(W)

TFP

500

75

0.025

0.012

0.006

0.01

34

U-MOSIII

80

8

0.0045

0.0035

0.85

34

U-MOSIV

75

–

U-MOSIII

40

27,34

U-MOSIV

TO-220SIS

VS-6

500

550

600

650

550

20

0.0045 27,34

U-MOSIV

7.5

8

1.0

0.01

0.03

27,34

25,34

U-MOSIV

1.07

U-MOSIII-H

U-MOSV

1

0.0039 27,34

0.007 27,34

0.0032 27,34

0.008 27,34

0.0095 27,34

0.84

U-MOSV

8.5

6

0.86

–30

20

U-MOSVI

0.024

0.028

0.075

0.054

0.020

0.035

0.11

U-MOSV

VS-6

30

6

U-MOSVI

TPC6005

VS-6

40

3.9

5

0.02

0.05

27,34

34

U-MOSIII

TPC6006-H

TPC6007-H

TPC6011

VS-6

30

20

5

U-MOSIII

VS-6

30

6

30

8

0.015

0.036

0.021

0.05

U-MOSIII

VS-6

–12

–20

–30

–20

30

–5.5

–2.7

–4.5

–5

–5.5

2.5

1.8

11

15

30

5.5

6

U-MOSIII

TPC6103

VS-6

30

U-MOSIII-H

U-MOSVI-H

π-MOSV/π-MOSV

U-MOSIV/U-MOSIII

U-MOSIII-H

High-speed U-MOSIII

TPC6105

VS-6

0.055

0.06

60

5

25,34

34

TPC6107

VS-6

100

60

2.2

3.8

0.18

TPC6108

VS-6

0.059

0.04

0.057

TPC6109-H

TPC6111

VS-6

–250/250 1.1/–0.9 1.7/2.55

–30/30 –4.5/6 0.027

VS-6

0.095

0.4

27,34

25,34

34

TPC6201

U-MOSII

TPC8405

TPC8406-H

TPC8A01

SOP-8

200

30

34

27

–

40

–40

30

6.5

–6.5

6

0.03

0.025

0.018

TPC8012-H

TPC8014

π-MOSV

SOP-8

0.014

0.0066

U-MOSIII

U-MOSIII-H

SOP-8

30

TPC8017-H

51

MOSFET Part Numbers

7

Main Characteristics

V^DSS

I^D

R^DS(ON)

Max

V^DSS

I^D

R^DS(ON)

Part Number

Series

Package

Page

Part Number

Series

Package

Page

Max

(V)

30

(A)

8.5/1

16/1

17/1

18/1

10/1

12

(Ω)

(V)

30

(A)

22

(Ω)

SOP-8

0.0056

34

–

TSON Advance

VS-8

0.0083 24,33

0.0169 24,33

0.0064 24,33

TPC8A01

U-MOSIII

TPCC8001-H U-MOSV-H

TPCC8002-H U-MOSV-H

TPCC8003-H U-MOSIV-H

TPCC8005-H U-MOSV-H

TPCC8006-H U-MOSIV-H

TPCC8007 U-MOSIV

TPCC8008 U-MOSIV

TPCC8102 U-MOSV

TPCC8103 U-MOSV

TPCC8A01-H U-MOSV-H

TPCF8002 U-MOSIV

TPCF8101 U-MOSIII

TPCF8102 U-MOSIII

TPCF8103 U-MOSIII

TPCF8104 U-MOSIII

TPCF8201 U-MOSIII

TPCF8301 U-MOSIII

TPCF8302 U-MOSIII

TPCF8303 U-MOSIII

TPCF8304 U-MOSIV

TPCF8402 U-MOSIII

TPCF8A01 U-MOSIII

TPCF8B01 U-MOSIII

TPCL4201 U-MOSV

TPCL4202 U-MOSV

TPCL4203 U-MOSV

TPCM8001-H U-MOSIII-H

TPCM8002-H U-MOSV-H

TPCM8003-H U-MOSV-H

TPCM8004-H U-MOSV-H

TPCM8A05-H U-MOSV-H

TPCP8001-H U-MOSIII-H

TPCP8003-H U-MOSIII-H

TPCP8004 U-MOSIV

TPCP8005-H U-MOSV-H

TPCP8006 U-MOSIV

TPCP8101 U-MOSIII

TPCP8102 U-MOSIV

TPCP8103-H U-MOSIII-H

TPCP8201 U-MOSIII

TPCP8202 U-MOSIV

TPCP8203 U-MOSIII

TPCP8301 U-MOSIV

TPCP8302 U-MOSIV

TPCP8303 U-MOSV

TPCP8401 U-MOSIII

TPCP8402 U-MOSIII

TPCP8403 U-MOSIV/U-MOSIII

TPCP8404 U-MOSV/U-MOSIV

TPCP8A05-H U-MOSV-H

TPCP8AA1 U-MOSII

TPCP8BA1 U-MOSII

TPCP8J01 U-MOSIV

TPCT4203 U-MOSIV

TPCT4204 U-MOSIV

SOP-8

30

22

TPC8A02-H U-MOSIII-H

TPC8A03-H U-MOSV-H

TPC8A04-H U-MOSV-H

TPC8A05-H U-MOSV-H

TPC8A06-H U-MOSV-H

TPCA8003-H U-MOSIII-H

TPCA8004-H U-MOSIII-H

TPCA8005-H U-MOSIII-H

SOP-8

30

0.0036 25,34

0.0133 25,34

0.0066 25,34

0.0101 25,34

30

13

SOP-8

30

26

SOP-8

30

22

0.008

24,33

SOP-8

30

20

27

(0.0046) 27,33

0.0068 27,33

0.0189 27,33

SOP Advance

30

35

0.0046

0.009

0.067

0.58

–

30

25

30

40

–30

30

–15

–18

21

30

27

–

0.012

0.0099 25,33

27,33

100

250

150

200

20

18

35

TPCA8006-H

TPCA8008-H

TPCA8009-H

TPCA8010-H

π-MOSVII

4

0.35

25,35

30

7

0.023

0.028

0.03

31

π

-MOSV

7

0.45

VS-8

–12

–20

–30

20

–6

π

5.5

40

0.0035 25,35

0.0049 24,35

0.0054 24,35

0.021 24,35

0.0062 25,35

0.0031 24,35

0.027 24,35

0.026 25,35

VS-8

–6

31

π

VS-8

–2.7

–6

0.11

31

TPCA8011-H U-MOSIII-H

TPCA8012-H U-MOSV-H

TPCA8014-H U-MOSIII-H

TPCA8015-H U-MOSIII-H

TPCA8016-H U-MOSIII-H

TPCA8018-H U-MOSV-H

TPCA8019-H U-MOSV-H

TPCA8020-H U-MOSIII-H

TPCA8022-H U-MOSIII-H

TPCA8023-H U-MOSV-H

TPCA8024 U-MOSIV

TPCA8025 U-MOSIV

TPCA8026 U-MOSIV

TPCA8027-H U-MOSIII

TPCA8028-H U-MOSVI-H

TPCA8030-H U-MOSV-H

TPCA8031-H U-MOSV-H

TPCA8036-H U-MOSVI-H

TPCA8039-H U-MOSVI-H

TPCA8040-H U-MOSVI-H

TPCA8045-H U-MOSVI-H

TPCA8046-H U-MOSVI-H

TPCA8047-H U-MOSVI-H

TPCA8048-H U-MOSVI-H

TPCA8049-H U-MOSVI-H

TPCA8050-H U-MOSVI-H

TPCA8051-H U-MOSVI-H

TPCA8052-H U-MOSVI-H

TPCA8053-H U-MOSVI-H

TPCA8060-H U-MOSVI-H

TPCA8101 U-MOSIII

TPCA8102 U-MOSIII

TPCA8103 U-MOSIV

TPCA8104 U-MOSIII

TPCA8105 U-MOSIII

TPCA8106 U-MOSV

TPCA8107-H U-MOSIII-H

TPCA8108 U-MOSIII

TPCA8A01-H U-MOSIII-H

TPCA8A02-H U-MOSV-H

TPCA8A04-H U-MOSV-H

TPCA8A05-H U-MOSV-H

TPCA8A08-H U-MOSV-H

30

35

VS-8

0.028

0.049

0.11

31

40

30

VS-8

3

31

40

35

VS-8

–20

–30

–2.7

–3

31

60

25

VS-8

0.059

0.058

0.072

31

30

27

VS-8

–3

31

30

40

VS-8

–3.2

31

40

7.5

22

VS-8

–30/30 –3.2/4 0.072/0.05

31

100

30

VS-8

20

–20

20

3

–2.7

6

0.049

0.11

31

21

0.0129

24

VS-8

31

30

35

0.0043 27,35

0.0036 27,35

0.0022 27,35

Chip LGA

TSSOP Advance

PS-8

0.031

0.04

27,32

33

30

40

30

6

30

45

24

6

0.036

0.0095

40

30

0.01

24,35

30

20

30

50

0.0028 24,35

0.011 24,35

0.0042 24,35

0.0057 24,35

0.0094 24,35

0.0036 24,35

0.0054 24,35

0.0073 24,35

0.0066 25,35

0.0104 25,35

0.0142 25,35

0.0094 25,35

0.0113 24,35

0.0223 25,35

0.0034 24,35

30

0.0062 24,33

0.0129 24,33

30

24

30

21

30

24

30

24

0.011

24,33

30

38

30

20

0.0129 25,33

30

34

30

7.2

2.2

8.3

11

0.016

0.19

32

30

23

PS-8

100

30

25,32

27,32

40

46

PS-8

0.009

40

38

PS-8

30

0.0133 24,32

40

32

PS-8

20

9.1

–5.6

–7.6

–4.8

4.2

5.5

4.7

–5

0.01

0.03

27,32

32

60

35

PS-8

–20

–40

30

60

28

PS-8

0.018

0.04

32

60

24

PS-8

25,32

32

80

28

PS-8

0.05

40

20

PS-8

30

0.023

0.04

27,32

32

60

15

PS-8

40

30

45

PS-8

–20

0.031

0.033

0.04

32

–30

–60

–12

–30

–40

30

–40

–6

0.007

0.006

–

PS-8

–5

32

PS-8

–3.8

32

0.0042 27,35

0.016 35,38

0.0033 27,35

0.0037 27,35

PS-8

–12/20 –5.5/0.1 0.038/3

–30/30 –3.4/4.2 0.048/0.072

–40/40 –3.4/4.7 0.170/0.040

32

PS-8

32

PS-8

32

–40

–7.5

–40

36

PS-8

–30/30

30

–4/4 0.05/0.05

32

0.03

25,35

35

PS-8

8

0.0175

0.105

0.18

32

0.0095

0.0056

PS-8

20

1.6

32

–

PS-8

–20

–1.3

32

30

34

0.0053 25,35

0.0032 25,35

0.0129 25,35

0.0042 25,35

PS-8

–32/50 –6/0.1

0.035

0.031

0.038

32

30

44

STP2

20

30

6

27,32

30

10

STP2

30

38

52

Product Obsolescence

8

8-1 End-of-Life Products

The part numbers in the left-hand column below are end-of-life or obsolete products. When ordering,

please choose from the replacement products in the right-hand column.

End-of-Life Products

Replacement Products

Electrical Characteristics

Part Number

Package

Part Number

Package

VDSS

(V)

ID

(A)

RDS(ON)

Max(Ω)

VDSS

(V)

ID

(A)

RDS(ON)

Max(Ω)

–60

–16

–50

–20

–30

60

TO-92

N-MINI

–60

–20

–50

–20

–30

60

S-MINI

2SJ148

–0.2

–2

2

2SJ168

–0.2

–2.7

–0.05

–0.1

–4.5

–6

0.2

8

2

2SJ167

2SJ168

PW-Mini

N-MINI

VS-6

2SJ200

0.71

50

TPC6105

0.11

50

S-MINI

2SJ342

–0.05

–2

2SJ343

S-MINI

USM

2SJ345

40

SSM3J16FU

SSM3J16FS

TPC6108

45

USM

2SJ346

40

45

SSM

2SJ347

40

45

PW-Mini

TPS

VS-6

2SJ511

0.76

0.12

1

0.006

0.028

2.1

1.7

2.1

7

VS-8

2SJ525

–5

TPCF8104

SSM3K7002BF

2SK2613

N-MINI

S-MINI

2SK1061

2SK1120

2SK1825

2SK1826

2SK1827

2SK1828

2SK1829

2SK1830

2SK2033

2SK2034

2SK2035

2SK2036

2SK2037

2SK2312

2SK2466

2SK2543

2SK2544

2SK2545

2SK2549

2SK2604

2SK2605

2SK2610

2SK2611

2SK2661

2SK2662

2SK2698

2SK2700

2SK2717

2SK2718

2SK2746

2SK2749

2SK2750

2SK2823

2SK2824

2SK2825

2SK2837

2SK2842

2SK2843

2SK2844

2SK2915

2SK2996

0.2

8

1000

50

TO-3P (N)

N-MINI

1000

60

TO-3P (N)

S-MINI

1.8

50

0.05

0.1

45

SSM3K7002BF

SSM3K7002BFU

SSM3K15F

SSM3K15FU

SSM3K15FS

SSM3K15F

SSM3K15FU

SSM3K15FS

SSM3K15F

SSM3K15FU

2SK3844

0.2

0.1

45

40

8

50

S-MINI

60

S-MINI

50

USM

60

USM

50

20

S-MINI

30

S-MINI

40

20

USM

30

USM

40

7

20

SSM

30

SSM

40

7

20

S-MINI

30

S-MINI

12

7

20

USM

30

USM

12

7

20

SSM

30

SSM

12

7

20

S-MINI

30

S-MINI

6

7

20

USM

30

USM

6

7

60

TO-220NIS

TO-220AB

TO-220NIS

PW-Mini

TO-3P (N)

TO-220NIS

TO-3P (N)

TO-220AB

TO-220NIS

TO-3P (N)

TO-220NIS

TO-3P (N)

TO-220NIS

S-MINI

60

TO-220NIS

TO-220SIS

TO-220AB

TO-220SIS

VS-6

0.017

0.046

0.85

1.25

0.29

2.2

2.5

1.4

1.5

0.4

4.3

2.5

6.4

1.7

2

0.0058

0.015

0.85

1.25

0.024

1.7

2.5

1.3

1.5

0.4

4.3

2.5

6.4

1.7

2

100

500

600

16

100

500

600

20

30

TK40A10K3

TK8A50D

8

6

2SK3761

6

TK6A60D

6

2

TPC6004

6

800

900

500

900

800

900

600

20

800

900

500

900

800

900

600

20

TO-3P (N)

TO-220SIS

TO-3P (N)

TO-220AB

TO-220SIS

TO-3P (N)

TO-220SIS

TO-3P (N)

TO-220SIS

SSM

5

2SK3633

7

5

2SK4013

6

5

2SK3700

5

9

2SK3878

9

5

2SK3758

5

TK5A50D

5

15

TK15J50D

2SK3564

15

3

5

2SK3565

5

2.5

7

2SK3566

2.5

7

2SK3633

7

2SK4115

7

3.5

0.1

20

2.2

40

TK4A60DA

SSM3K35FS

TK20J50D

TK12A50D

TK10A60D

TK70D06J1

2SK3903

3.5

0.18

20

12

10

70

14

10

2.2

20

USM

20

SSM

40

20

SSM

20

SSM

40

20

500

600

30

TO-3P (N)

TO-220NIS

TO-220AB

TO-3P (N)

TO-220NIS

500

600

60

TO-3P (N)

TO-220SIS

TO-220 (W)

TO-3P (N)

TO-220HIS

0.27

0.52

0.75

0.02

0.4

1

0.27

0.52

0.75

0.0064

0.44

1

12

10

35

600

16

10

2SK4112

53

Product Obsolescence

8

End-of-Life Products

Replacement Products

Electrical Characteristics

Package

Part Number

Package

Part Number

V^DSS

(V)

ID

(A)

RDS(ON)

Max(Ω)

VDSS

ID

(A)

RDS(ON)

Max(Ω)

(V)

30

600

100

30

PW-Mini

TO-220NIS

TO-220FL/SM

TO-3PSM

TO-220NIS

TO-220FL/SM

TO-3P (N)

TO-220NIS

TFP

30

600

–

VS-6

TO-220SIS

–

2

0.18

5

6

2

0.024

4.5

2SK2964

2SK3067

2SK3084

2SK3089

2SK3090

2SK3125

2SK3126

2SK3127

2SK3128

2SK3129

2SK3130

2SK3236

2SK3316

2SK3389

2SK3397

2SK3407

2SK3439

2SK3440

2SK3441

2SK3442

2SK3443

2SK3499

2SK3543

2SK982

HN1J02FU

HN1K02FU

HN1K03FU

HN1K04FU

HN1K05FU

HN1K06FU

HN1L02FU

HN1L03FU

HN4K03JU

SSM3J01F

SSM3J02F

SSM3J15TE

SSM3J16TE

SSM3K01F

SSM3K02F

SSM3K03C

SSM3K03FE

SSM3K03TE

SSM3K04FE

SSM3K126TU

SSM3K15TE

SSM3K16TE

SSM3K302T

SSM3K311T

SSM6G06FE

SSM6H06FE

TPC6106

TPC6003

2SK3767

–

30

0.046

0.03

0.02

0.007

0.65

0.012

0.007

1.55

0.02

1.8

–

40

450

40

60

600

60

500

40

450

40

60

100

150

400

450

60

–20

20

60

20

30

20

–

TO-220SM

TFP

40

32

75

10

32

75

70

6

0.018

0.0035

0.68

0.018

0.0035

0.0058

1.4

2SK3847

2SK3843

2SK3869

2SK3847

2SK3843

2SK3845

2SK3947

2SK3662

2SK3868

2SK3843

2SK3869

2SK3843

2SK3842

2SK4034

TK40D10J1

TK50X15J1

30

45

30

70

450

30

TO-220SIS

TO-220SM

TFP

10

45

30

60

50

TO-3P (N)

TO-220SIS

TO-220NIS

TFP

60

600

60

6

35

5

0.0125

1.7

500

30

5

75

0.005

0.006

0.65

0.005

0.008

0.0058

0.02

0.055

0.55

2.45

1

75

10

75

40

50

10

2

0.008

0.0035

0.68

0.0035

0.0058

0.015

0.03

0.55

2.45

2.1

30

TFP

75

450

30

TO-220NIS

TFP

TO-220SIS

TFP

10

75

60

TFP

50

60

TFP

75

100

150

400

450

60

TFP

TO-220 (W)

TFP

45

TFP

30

✽

TFP

10

TK10X40D

2SK3757

TO-220NIS

TO-92

TO-220SIS

S-MINI

US6

2

0.2

–0.05

0.05

0.1

0.05

0.1

0.05

0.1

–0.7

–0.6

–0.1

1.3

1

0.2

–0.1

0.1

0.2

0.18

0.1

0.18

–

SSM3K7002BF

SSM6P16FU

SSM6N16FU

SSM6K7002BFU

SSM6N35FU

SSM6N15FU

SSM6L35FU

–

–20

20

US6

40

45

US6

40

15

20

US6

12

15

50

US6

50

2.1

20

US6

40

20

US6

6

7

20

US6

40

20

50

US6

–

50

–

20

UFV

30

–30

–20

30

20

30

20

30

–

USV

12

0.1

–1.7

–1.6

–0.1

3.2

2.5

0.1

6

7

SSM5N15FU

SSM3J01T

SSM3J02T

SSM3J15FV

SSM3J16FV

SSM3K01T

SSM3K02T

SSM3K16CT

SSM3K16FS

SSM3K16FV

SSM3K04FS

SSM3K131TU

SSM3K15FV

SSM3K16FV

SSM3K316T

SSM3K315T

–

–30

–20

30

S-MINI

TESM

TSM

0.6

TSM

0.7

VESM

TSM

32

TESM

45

S-MINI

SS-CSP

ESM

0.15

0.25

12

0.15

0.25

15

30

TSM

20

CST3

SSM

0.1

3.9

0.1

3

20

12

15

20

TESM

VESM

SSM

12

15

20

ESM

12

30

UFM

0.043

7

0.0415

7

30

TESM

VESM

TSM

0.1

4

20

TESM

15

30

TSM

0.071

0.043

45

0.065

0.0415

–

30

TSM

4.6

–0.1

0.1

–3.9

6

–20

20

ES6

–

ES6

–

15

–

–40

20

VS-6

–

0.08

0.031

0.038

0.095

0.12

0.035

–

STP

20

30

–30

–

STP2

6

0.031

0.038

0.023

0.105

–

TPCT4201

TPCT4202

TPC6201

TPC8301

TPC8303

TPCT4203

TPCT4204

TPCP8202

TPCF8304

–

30

STP

STP2

6

30

VS-6

PS-8

2.5

–3.5

–4.5

5.5

3.2

–

–30

SOP-8

–

✽: Under development

54

Packaging

9

9-1 Compact Surface-Mount Packages

100

Toshiba offers a broad range of packaging

options suitable for various mobile applications,

including ultra-small, thin packages; those

specifically designed for lithium-ion battery

protection circuits; high-current packages with

a thermal fin on the bottom.

SOP Advance

TSSOP Advance

TSON Advance

SOP-8

PS-8

10

VS-8

VS-6

TSM

UF6

Chip LGA

ES6

UFM

STP2 STP

TSSOP-8

S-Mini

SMV

CST3B

UFV

US6

1

VESM

SSM

USM

CST4

CST6D

CST3

ESV

USV

0.1

1

10

100

Footprint Area (mm²)

■ CST3

Unit: mm

0.2

2.0 0.05 4.0 0.1

Y

Package dimensions

Typical PCB land pad dimensions Tape dimensions

φ1.5 0.1

Y

φ0.5

0.6 0.05

0.5 0.03

X

X’

Y’

0.6

Y’

0.47

0.7

Tape feeding direction Cross section: Y-Y’

X

X’

0.38

11.4

Cross section: X-X’

5.0

9.0

0.15 0.03

0.35 0.02

Reel dimensions

0.05 0.03

Bottom View

0.16

0.22

Packing quantity

10000 pcs/reel

■ CST3B

Unit: mm

0.2

Package dimensions

Typical PCB land pad dimensions Tape dimensions

4.0 0.1

φ1.5 0.1

A

0.8

± 0.05

0.70 ± 0.03

0.04

M

A

B

B’

3

0.7

0.6

A’

φ0.5

2.0 0.05

B

A’

B’

Tape feeding direction

11.4

9.0

0.9

5.0

2

1

Reel dimensions

0.04

M

A

B

0.05

± 0.03

0.25

±

0.03

Bottom View

0.25

0.1

0.45

10000 pcs/reel

Packing quantity

55

Packaging

9

9-1 Compact Surface-Mount Packages

■ VESM ^(SOT-723)

Unit: mm

0.18

2.0 0.05 4.0 0.05

Y

Package dimensions

Typical PCB land pad dimensions Tape dimensions

φ1.5 0.1

Y

φ0.5

X

X’

Y’

0.5

1.2 ± 0.05

0.8 ± 0.05

Y’

0.63

1.3

Tape feeding direction Cross section:Y-Y’

X

X’

1

2

0.4

Cross section: X-X’

5.0

Reel dimensions

11.4

3

9.0

0.4 0.4

8000 pcs/reel

Packing quantity

■ SSM ^{(SOT-416)(SC-75)}

Unit: mm

0.2

2.0 0.05 4.0 0.1

Y

Package dimensions

Typical PCB land pad dimensions Tape dimensions

φ1.5 0.1

Y

φ0.5

X

X’

Y’

0.6

1.6 ± 0.2

0.8 ± 0.1

Y’

0.95

1.75

Tape feeding direction Cross section:Y-Y’

1

2

X

X’

3

Cross section: X-X’

5.0

11.4

9.0

Reel dimensions

0.5 0.5

0 to 0.1

3000 pcs/reel

Packing quantity

■ USM ^{(SOT-323)(SC-70)}

Unit: mm

0.2

2.0 0.05 4.0 0.1

Package dimensions

Typical PCB land pad dimensions Tape dimensions

Y

φ1.5 0.1

Y

φ1.05

2.1 ± 0.1

1.25 ± 0.1

0.5

X

X’

Y’

1.25

1

2

2.2

Tape feeding direction Cross section:Y-Y’

X

X’

3

Cross section: X-X’

5.0

11.4

9.0

Reel dimensions

0.65 0.65

0 to 0.1

Packing quantity

3000 pcs/reel

56

■ UFM

Unit: mm

0.2

2.0 0.05 4.0 0.1

Y

Package dimensions

Typical PCB land pad dimensions Tape dimensions

φ1.5 0.1

Y

φ1.1

0.5

X

X’

Y’

2.1 ± 0.1

1.7± 0.1

Y’

0.85

Tape feeding direction Cross section:Y-Y’

2.2

1

2

X

X’

3

Cross section: X-X’

5.0

11.4

9.0

Reel dimensions

0.65 0.65

3000 pcs/reel

Packing quantity

■ S-Mini ^{(SOT-346)(SC-59)}

Unit: mm

0.25

2.0 0.05 4.0 0.1

Package dimensions

Typical PCB land pad dimensions Tape dimensions

Y

φ1.5 0.1

Y

φ1.1

+ 0.5

2.5

1.5

X

X’

-

0.3

+ 0.25

0.15

0.8

Y’

-

Y’

1.35

Tape feeding direction Cross section:Y-Y’

3.25

1

2

X

X’

3

Cross section: X-X’

5.0

11.4

9.0

Reel dimensions

0.95 0.95

0 to 0.1

3000 pcs/reel

Packing quantity

■ TSM

Unit: mm

0.25

Package dimensions

Typical PCB land pad dimensions Tape dimensions

2.0 0.05 4.0 0.1

Y

φ1.5 0.1

Y

φ1.1

+ 0.2

2.8

1.6

-

0.3

X

X’

0.8

+ 0.2

Y’

-

0.1

Y’

0.9

Tape feeding direction Cross section:Y-Y’

3.15

1

2

X

X’

3

Cross section: X-X’

5.0

11.4

9.0

Reel dimensions

0.95 0.95

0 to 0.1

Packing quantity

3000 pcs/reel

57

Packaging

9

■ CST4

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.2

2.0 0.05 4.0 0.05

Y

φ1.5 0.1

Y

φ0.5

0.8

±

0.5

0.05

X

X’

Y’

0.5

0.05

±

0.04

0.2 ± 0.02

Y’

0.5

Tape feeding direction Cross section:Y-Y’

0.95

X

X’

Cross section: X-X’

5.0

11.4

9.0

Bottom View

Reel dimensions

0.2

Packing quantity

10000 pcs/reel

■ ESV ^(SOT-553)

Unit: mm

0.18

Package dimensions

Typical PCB land pad dimensions Tape dimensions

2.0 0.05 4.0 0.1

Y

φ1.5 0.1

Y

φ0.5

X

X’

Y’

1.6 ± 0.05

Y’

0.3

0.65

1.2 ± 0.05

Tape feeding direction Cross section:Y-Y’

1.75

5

0.45

X

X’

1

2

3

1.0

Cross section: X-X’

5.0

11.4

9.0

4

0.5

Reel dimensions

Packing quantity

4000 pcs/reel

Unit: mm

■ USV ^{(SOT-353)(SC-88A)}

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.25

2.0 0.05 4.0 0.1

Y

φ1.5 0.1

Y

φ1.1

2.1 ± 0.1

1.25 ± 0.1

X

X’

0.4

Y’

1.2

1

2

3

5

Tape feeding direction

2.2

X

X’

11.4

9.0

5.0

4

Reel dimensions

0.65 0.65

0 to 0.1

3000 pcs/reel

Packing quantity

58

■ UFV

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.18

2.0 0.05 4.0 0.05

Y

φ1.5 0.1

Y

φ1.1

X

X’

Y’

2.1

1.7

±

0.1

0.45

Y’

0.85

5

1

2

3

Tape feeding direction Cross section:Y-Y’

2.2

X

X’

Cross section: X-X’

5.0

11.4

9.0

4

Reel dimensions

0.65 0.65

Packing quantity

3000 pcs/reel

■ SMV ^{(SOT-25)(SC-74A)}

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.25

2.0 0.05 4.0 0.1

Y

φ1.5 0.1

Y

φ1.1

+ 0.2

2.8

1.6

-

0.3

+ 0.2

0.1

X

X’

0.95 0.95

-

Y’

1.3

Tape feeding direction

1

5

4

3.2

X

X’

2

3

11.4

9.0

5.0

Reel dimensions

0.8 0.6 0.8

0 to 0.1

3000 pcs/reel

Packing quantity

■ CST6D

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.2 0.05

B

4.0 0.05

φ1.5 +0.1/-0

B

1.0

±

0.05

0.03

0.15

±

0.35

A

A’

B’

1.13

B’

φ0.5 0.05

2.0 0.05

A

0.48 0.05

A’

Tape feeding direction

1.08 0.05

11.4

9.0

0.075

± 0.03

5.0

0.35 0.35

0.02 0.02

Reel dimensions

0.7

± 0.03

Bottom View

0.2

0.15

Packing quantity

10000 pcs/reel

59

Packaging

9

■ ES6 ^(SOT-563)

Unit: mm

0.18

2.0 0.05 4.0 0.1

Y

Package dimensions

Typical PCB land pad dimensions Tape dimensions

φ1.5 0.1

Y

φ0.5

X

X’

Y’

1.2 ± 0.05

0.3

Y’

0.65

Tape feeding direction Cross section:Y-Y’

0.45

1.75

1

2

3

6

5

4

X

X’

1.0

Cross section: X-X’

5.0

11.4

9.0

0.5

Reel dimensions

1.6 ± 0.05

Packing quantity

4000 pcs/reel

■ US6 ^{(SOT-363)(SC-88)}

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.25

2.0 0.05 4.0 0.1

Y

φ1.5 0.1

Y

φ1.1

2.1 ± 0.1

X

X’

Y’

0.4

1.25 ± 0.1

Y’

1.2

Tape feeding direction

1

2

3

6

5

4

2.2

X

X’

11.4

9.0

5.0

Reel dimensions

0.65 0.65

0 to 0.1

3000 pcs/reel

Packing quantity

■ UF6

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.18

2.0 0.05 4.0 0.05

Y

φ1.5 0.1

Y

φ1.1

2.1

1.7

±

0.1

X

X’

Y’

0.45

Y’

0.85

6

1

2

Tape feeding direction

2.2

X

X’

5

3

11.4

9.0

4

5.0

Reel dimensions

0.65 0.65

Packing quantity

3000 pcs/reel

60

■ VS-6

■ VS-8

■ PS-8

Unit: mm

Package dimensions

Typical PCB land pad

dimensions

Tape dimensions

4.0

φ1.5

0.3

A

6

4

B

B'

0.8

0.6

0.8

2.0

A'

1.4

4.0

1.55

B

B'

1

3

0.3 0.1

0.95

3.05

11.4

9.0

2.9 0.2

5.0

Reel dimensions

+0.25

0.25

0.05

-0.15

0.95 0.95

Packing quantity

3000 pcs/reel

Unit: mm

Package dimensions

Typical PCB land pad

dimensions

Tape dimensions

4.0

2.0

φ1.5

A

0.2

2.9 0.1

0.3+0.1/ –0.05

0.025

B

M

A

5

8

0.95

4.0

A

φ1.1

B

1

4

3.1

0.65

11.4

9.0

5.0

Reel dimensions

0.05

S

A

0.40 (8X)

0.65 (6X)

0.475

Packing quantity

4000 pcs/reel

Unit: mm

Package dimensions

Typical PCB land pad

dimensions

Tape dimensions

0.2

φ1.50

4.0

0.33 0.05

M

0.05

A

5

8

2.0

0.95

1.15

4.0

1

0.33 0.05

4

0.17 0.02

B

3.1

0.475

M

0.05

B

11.4

9.0

0.65

5.0

2.9 0.1

A

Reel dimensions

0.025

S

0.40 (8X)

0.65 (6X)

3000 pcs/reel

Packing quantity

61

Packaging

9

■ TSON

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

φ1.5

0.3 0.05

0.65

4

2.0

0.25

0.05

M

A

8

5

2.65

0.65

0.4

1

4

0.575

1.05

φ1.1

8.0

3.3 0.3

A

18.5

13.5

3.1 0.1

120°

Reel dimensions

R135

R10

S

M

S

0.05

0.4

φ13

1

4

2.0

2.49 0.2

Packing quantity

3000 pcs/reel

0.25 0.1

8

5

■ STP2

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

4.0

φ1.5

0.3

2.0

3.8 0.1

1

4

0.375

1.6 0.1

3

0.375

0.42

2

0.025

B

M

B

2.2

0.8

4.0

0.6 0.05

φ1.0

L Type

R Type

13

φ180

Reel dimensions

0.14 0.04

0.05

S

2

2.49

1.61

φ160

4

3

5

0.3 0.1

0.35+0.06

–0.1

1

*

0.4+0.1

–0.06

18

4

2

*

φ76

1

0.2 0.05

3

1.93 0.1

1.25 0.1

1: 2

2: 4

*

1.2

*

Packing quantity

4000 pcs/reel

■ Chip LGA

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

4.0

0.18

1.59 0.05

B

φ1.55

2.0

B

φ0.7

φ0.30

A

4.0

φ0.50

B

0.3

0.65

A

φ0.7

1.75

11.4

9.0

5.0

Reel dimensions

0.001

0.01

S

φ

0.3

0.025

0.65

1

2

M

A

B

4

3

0.65

Packing quantity

4000 pcs/reel

62

■ TSSOP Advance

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.25 0.05

0.8

4.0

0.3

M

+

0.05

A

φ1.55

8

2.0 2.0

5

5.23

5.05

0

0.2

-

0.2

1.1

0.55

1

4

0.55

1.0

2.95

A

φ1.7

8.0

3.5 0.2

18.5

13.5

120

Reel dimensions

S

0.05 S

R135

R10

0.8

0.55

1

4

φ

13

2.75 0.2

8

5

0.8 0.1

Packing quantity

3000 pcs/reel

■ TSSOP-8

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

0.3

4.0

2.0

φ1.55

0.40 (8X)

8

5

8.0

1.55

1.1

1

4

0.25 0.05

(0.525)

0.65

18.5

13.5

Reel dimensions

3.3 max

3.0 0.1

120˚

R

135

0.6 0.2

R

10

0.05

0.65 (6X)

φ13

.0

2

Packing quantity

3000 pcs/reel

■ SOP-8

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

4.0

2.0 2.0

0.3

φ1.55

8

5

6.5

0.50 (8X)

6.8

1

4

0.595

0.4 0.1

8.0

2.55

18.5

13.5

0.25 M

1.27

5.5 max

Reel dimensions

120˚

5.0 0.2

R

135

R

10

1.27 (6X)

0.5 0.2

0.1

φ

13

Packing quantity

3000 pcs/reel

63

Packaging

9

■ SOP Advance

Unit: mm

Package dimensions

Typical PCB land pad dimensions Tape dimensions

4.0

0.3

φ1.55

2.0 2.0

0.4 0.1

5

1.27

M

0.05

A

6.6

6.4

8

1.0

0.15 0.05

0.75

1.2

1

4

0.595

A

φ1.7

8.0

4.56

5.0 0.2

Reel dimensions

18.5

13.5

120˚

S

0.05

S

4

R

135

R

10

1

1.27

0.75

φ

13

4.25 0.2

8

5

0.8 0.1

3000 pcs/reel

Packing quantity

■ PW-Mini

Unit: mm

Tape dimensions

4.0

0.3

ø1.5

2.0 2.0

5.1

4.9

4.6 max

1.7 max

1.6 max

0.4 0.05

2.3

0.9

1.65

1.8

8.0

5.0

+0.08

0.45

13

-

0.05

Reel dimensions

+0.08

0.4

-

0.05

-

0.05

1.5 0.1

1

2

3

1.2

1. Gate

2. Drain (Heatsink)

3. Source

1000 pcs/reel

Packing quantity

Tape dimensions

■ DP

Unit: mm

4.0

2.0

ø3.0

6.8 max

ø1.5

0.3

5.2 0.2

0.6 max

6.8

2.7

8.0

°

0.6 0.15

0.95 max

0.6 0.15

Reel dimensions

17.5

40

0.6 max

°

120

R

5

2

0.5

2.3

R

120

2

1

2

3

3 0.5

10

2.3

1. Gate

2

2. Drain (Heatsink)

3. Source

2000 pcs/reel

Packing quantity

64

■ New PW-Mold

Unit: mm

Tape dimensions

6.5 0.2

5.2 0.2

4.0

2.0

ø3.0

0.6 max

ø1.5

0.3

6.8

1.1 0.2

0.6 max

2.7

8.0

0.8 max

°

40

17.5

Reel dimensions

1.5 max

3

0.6 0.15

°

120

R

5

2

0.5

1

2

R

120

2

3

10

2.3 0.15

1. Gate

2

2. Drain (Heatsink)

3. Source

Packing quantity

Tape dimensions

2000 pcs/reel

■ DPAK

Unit: mm

4.0

2.0

φ1.55 0.05

φ1.5 min

6.6 0.2

2.7

0.58 max

5.34 0.13

1.7

0.3 0.05

6.9

2.5

8.0

15.9-19.4

22.4 max

Reel dimensions

1.14 max

2.29

0.76 0.12

100

2

13.0 0.20

16.4

1

2

3

1. Gate

2. Drain (Heatsink)

3. Source

2000 pcs/reel

Packing quantity

Tape dimensions

■ TO-220SM

Unit: mm

0.4

4.0

ø2.0

ø1.5

10.3 max

2.0

1.32

0.1

10.8

5.2

12.0

0.76

2.54 0.25

°

40

24.4

Reel dimensions

2.54 0.25

°

120

R8

2

R120

2

1

2

3

4.0

10

2

1. Gate

2. Drain (Heatsink)

3. Source

1000 pcs/reel

Packing quantity

65

Packaging

9

■ TO-220SM(W)

Unit: mm

4.0

0.4

ø2.0

ø1.5

2.0

Tape dimensions

Reel dimensions

10.0 0.3

9.5 0.2

0.4 0.1

10.8

5.2

1.1

12.0

°

40

24.4

°

120

R8

0.76 0.1

1.4 0.1

2

2.35 0.1

R120

2

2.54 0.25

2.34 0.25

0.4 0.1

4.0

1

2

3

10

1. Gate

2. Drain (Heatsink)

3. Source

2

1000 pcs/reel

Packing quantity

Tape dimensions

■ TFP

Unit: mm

9.2 max

4.0

12.0

2.0

ø1.5

0.30

0.4 0.1

7.0 0.2

1

9.5

3.0

ø2.0

R₁₀

°

120

25.5

Reel dimensions

R₁₃₅

°

60

2.0 1.5 2.0 2.5

2

3

4

ø13

1. Drain (Heatsink)

2. Gate

3. Source 1

4. Source 2

2

1.0 0.2 1.0 0.2 3.6 0.2

1500 pcs/reel

Packing quantity

9-2 Through-Hole Packages

■ LSTM

■ PW-Mold (Straight)

Unit: mm

6.8 max

5.1 max

0.6 max

5.2 0.2

0.75 max

1.0 max

0.8 max

0.6 max

0.95 max

0.6 0.15

0.6 max

1.27

1

2

2.54

3

2.3

1. Source

2. Drain

3. Gate

1. Gate

2. Drain (Heatsink)

3. Source

1

2

3

■ New PW-Mold2

■ DP (Straight)

6.5 0.2

5.2 0.2

6.8 max

0.6 max

5.2 0.2

1.1 0.2

0.9

0.6 max

0.95 max

0.6 0.15

0.6 max

2.3 2.3

1

2

3

2.3 2.3

1. Gate

2. Drain (Heatsink)

3. Source

1. Gate

2. Drain (Heatsink)

3. Source

0.8 max

1.1 max

0.6 0.15

1

2

3

66

■ TPS

■ TO-220AB

■ TO-220NIS

■ TO-220FL

■ TO-3P(N)IS

Unit: mm

8.0 0.2

10.3 max

ø3.6 0.2

0.5

1.4 0.1

1.05 0.1

1.6 max

0.76

0.5 + 0.15

-

0.05

0.5 + 0.15

0.05

2.54 0.25

2.5 0.5

-

1. Source

2. Drain

3. Gate

1. Gate

2. Drain (Heatsink)

3. Source

1

2

3

1

2

3

■ TO-220(W)

■ TO-220SIS

■ TO-3P(N)

■ TO-3P(L)

10.0 0.3

9.5 0.2

ø 3.2 0.2

10 0.3

2.7 0.2

A

ø

3.65 0.2

0.6 0.1

1.1

1.1 0.15

0.75 0.25

0.75 0.15

2.54 0.25

0.62 0.15

0.2 M

ø

A

2.54 0.25

+0.25

0.57

2.53 0.2

–

0.10

2.54

1. Drain

2. Source

3. Gate

1. Gate

2. Drain

3. Source

1

2

3

1

2

3

10.3 max

10 0.3

2.7 0.2

ø 3.2 0.2

1.32

A

1.14 0.15

1.6 max

0.76

0.69 0.15

2.54

M

ø 0.2

A

2.54

2.54 0.25

1. Gate

2. Drain

3. Source

1. Gate

2. Drain (Heatsink)

3. Source

1

2

3

1

2

3

15.9 max

ø 3.2 0.2

3.5

15.8 0.5

ø 3.6 0.2

2.0

2.0 0.3

1.0 + 0.25

-

0.15

+ 0.3

1.0

-

0.25

5.45 0.2

3.15 + 0.2

1. Gate

2. Drain (Heatsink)

3. Source

1. Gate

2. Drain

3. Source

-

0.1

1

2

3

1

2

3

ø 3.3 0.2

20.5 max

2.5

3.0

+ 0.3

1.0

-

0.25

5.45 0.15

1. Gate

2. Drain (Heatsink)

3. Source

1

2

3

67

(As of April 01, 2009)

OVERSEAS SUBSIDIARIES AND AFFILIATES

2009-9

Toshiba America

Toshiba Electronics Europe GmbH

Toshiba Electronics Asia, Ltd.

Electronic Components, Inc.

• Headquarters-Irvine, CA

Tel: (949)623-2900 Fax: (949)474-1330

• Düsseldorf Head Office

• Hong Kong Head Office

BCE0082B

Tel: (0211)5296-0 Fax: (0211)5296-400

Tel: 2375-6111 Fax: 2375-0969

• France Branch

Tel: (1)48-12-48-12 Fax: (1)48-94-51-15

• Beijing Office

Tel: (010)6590-8796 Fax: (010)6590-8791

• Buffalo Grove (Chicago)

Tel: (847)484-2400 Fax: (847)541-7287

• Italy Branch

Tel: (039)68701 Fax: (039)6870205

• Chengdu Office

Tel: (028)8675-1773 Fax: (028)8675-1065

• Duluth, GA (Atlanta)

Tel: (770)931-3363 Fax: (770)931-7602

• Spain Branch

Tel: (91)660-6798 Fax:(91)660-6799

• Qingdao Office

Tel: (532)8579-3328 Fax: (532)8579-3329

• San Jose Engineering Center, CA

Tel: (408)526-2400 Fax:(408)526-2410

• U.K. Branch

Tel: (0870)060-2370 Fax: (01252)53-0250

Toshiba Electronics Shenzhen Co., Ltd.

Tel: (0755)2399-6897 Fax: (0755)2399-5573

• Wixom (Detroit)

Tel: (248)347-2607 Fax: (248)347-2602

• Sweden Branch

Tel: (08)704-0900 Fax: (08)80-8459

Toshiba Electronics (Shanghai) Co., Ltd.

• Shanghai Head Office

Tel: (021)6841-0666 Fax: (021)6841-5002

Toshiba Electronics do Brasil Ltda.

Tel: (011)2539-6681 Fax: (011)2539-6675

Toshiba Electronics Asia (Singapore) Pte. Ltd.

Tel: (6278)5252 Fax: (6271)5155

Toshiba India Private Ltd.

Tel: (011)2331-8422 Fax: (011)2371-4603

• Hangzhou Office

Tel: (0571)8717-5004 Fax: (0571)8717-5013

Toshiba Electronics Service (Thailand) Co., Ltd.

Tel: (02)501-1635 Fax: (02)501-1638

• Nanjing Office

Tel: (025)8689-0070 Fax: (025)8689-0125

Toshiba Electronics Trading (Malaysia) Sdn. Bhd.

• Kuala Lumpur Head Office

Tel: (03)5631-6311 Fax: (03)5631-6307

Toshiba Electronics (Dalian) Co., Ltd.

Tel: (0411)8368-6882 Fax: (0411)8369-0822

• Penang Office

Tel: (04)226-8523 Fax: (04)226-8515

Tsurong Xiamen Xiangyu Trading Co., Ltd.

Tel: (0592)226-1398 Fax: (0592)226-1399

Toshiba Electronics Philippines, Inc.

Tel: (02)750-5510 Fax: (02)750-5511

Toshiba Electronics Korea Corporation

• Seoul Head Office

Tel: (02)3484-4334 Fax: (02)3484-4302

• Daegu Office

Tel: (053)428-7610 Fax: (053)428-7617

Toshiba Electronics Taiwan Corporation

• Taipei Head Office

Tel: (02)2508-9988 Fax: (02)2508-9999

• Kaohsiung Office

Tel: (07)237-0826 Fax: (07)236-0046

Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware,

software and systems (collectively “Product”) without notice.

This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is

permissible only if reproduction is without alteration/omission.

Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and

for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could

cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and

comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for

Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used

with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use

of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs,

algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES

NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics

appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily

high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact

(“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment

used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and

escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.

Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.

The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual

property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by

estoppel or otherwise.

ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM

EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR

INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA,

AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING

WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use,

stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology

may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related

software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all

applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for

damages or losses occurring as a result of noncompliance with applicable laws and regulations.

2009

Previous edition: BCE0082A

2009-9(1k)SO-DQ

Semiconductor Company

Website: http://www.semicon.toshiba.co.jp/eng


型号：	TPCP8203(TE85L,F)
厂家：	TOSHIBA
描述：	MOSFET N-CH DUAL 40V 4.7A 2-3V1K
文件：	总63页 (文件大小：1614K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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