TPCP8701 [TOSHIBA]
TOSHIBA Transistor Silicon NPN Epitaxial Type; 东芝晶体管NPN硅外延型
| 型号： | TPCP8701 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type |
| 文件： | 总5页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPCP8701
TOSHIBA Transistor Silicon NPN Epitaxial Type
TPCP8701
Portable Equipment Applications
Unit: mm
Switching Applications
0.33±0.05
A
M
0.05
8
5
Inverter Lighting Applications
•
•
•
•
Small footprint due to small and thin package
High DC current gain : h = 400 to 1000 (I = 0.3 A)
FE
Low collector-emitter saturation : V
C
0.475
1
4
= 0.14 V (max)
CE (sat)
High-speed switching : t = 120 ns (typ.)
B
B
M
0.05
0.65
f
2.9±0.1
A
0.8±0.05
Maximum Ratings
Characteristics
(Ta = 25°C)
S
0.025
+0.1
S
0.28
0.17±0.02
-0.11
Symbol
Rating
100
Unit
V
+0.13
-0.12
1.12
1.12
+0.13
-0.12
Collector-base voltage
V
CBO
+0.1
0.28
V
80
50
V
V
-0.11
CEX
5.Collector2
6.Collector2
7.Collector1
8.Collector1
1.Emitter1
Collector-emitter voltage
Emitter-base voltage
2.Base1
3.Emitter2
4.Base2
V
V
CEO
JEDEC
―
7
V
A
EBO
JEITA
―
DC (Note 1)
I
3.0
5.0
C
Collector current
Base current
TOSHIBA
2-3V1C
Pulse (Note 1 )
I
CP
Weight: 0.017 g (typ.)
I
B
300
mA
Single-device
operation
Figure 1.
Circuit configuration
(Top View)
1.77
Collector power
dissipation (t = 10s)
Pc (Note 2)
Pc (Note 2)
W
W
Single-device
value at dual
operation
0.95
0.94
0.54
8ꢀꢀ7 ꢀ6 ꢀ5
Single-device
operation
Collector power
dissipation (DC)
Single-device
value at dual
operation
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−55 to 150
1ꢀ 2ꢀ 3ꢀ 4
Figure 2. Marking
(Note 3)
8ꢀ 7 6 ꢀ 5
Note 1: Please use devices on condition that the junction temperature is
below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: ● on lower left on the marking indicates Pin 1.
Type
※ Weekly code: (Three digits)
8701
※
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
1ꢀ 2ꢀ 3
4
Year of manufacture
Lot No.
(One low-order digits of calendar year)
(Weekly code)
1
2004-05-11
TPCP8701
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
= 100 V, I = 0
Min
Typ.
Max
Unit
I
I
V
V
⎯
⎯
⎯
⎯
100
100
⎯
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
= 7 V, I = 0
C
EBO
Collector-emitter brakedown voltage
V
I
= 10 mA, I = 0
50
400
200
⎯
⎯
(BR) CEO
C
B
h
h
(1)
(2)
V
V
= 2 V, I = 0.3 A
⎯
1000
⎯
FE
CE
CE
C
DC current gain
= 2 V, I = 1 A
⎯
FE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 1 A, I = 20 mA
⎯
0.14
1.10
⎯
V
V
CE (sat)
BE (sat)
C
C
B
V
= 1 A, I = 20 mA
⎯
⎯
B
C
ob
V
= 10 V, I = 0, f = 1MHz
⎯
13
40
500
120
pF
CB
E
t
⎯
⎯
r
See Figure 3 circuit diagram
30 V, R = 30 Ω
Switching time
V
ns
Storage time
Fall time
t
⎯
⎯
CC
L
stg
I
= −I = 33.3 mA
B1
B2
t
⎯
⎯
f
Figure 3. Switching Time Test Circuit & Timing Chart
VCC
RL
Output
20µs
IB1
IB1
IB2
IB2
Duty cycle ＜1%
Input
2
2004-05-11
TPCP8701
I
– V
h – I
FE C
C
CE
4
3
10000
Common emitter
Common emitter
= 2 V
Single nonrepetitive pulse
Ta = 25°C
Single nonrepetitive pulse
V
CE
60
70
50
Ta = 100°C
40
30
1000
100
10
25°C
20
10
5
2
1
0
−55°C
2
I
B
= 1 mA
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1.0
Collector current
I
C
(A)
Collector−emitter voltage
V
CE
(V)
V
– I
C
V
– I
CE (sat)
BE (sat) C
1
10
Common emitter
= 50
Single nonrepetitive pulse
Common emitter
= 50
Single nonrepetitive pulse
β
β
0.1
Ta = 100°C
Ta = −55°C
1
−55°C
0.01
0.001
100°C
25°C
0.01
25°C
0.1
0.001
0.001
0.1
1
10
0.01
0.1
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
P – Ta
c
I
– V
C
BE
1.0
0.8
0.6
0.4
0.2
3
2
DC Operation
Ta = 25°C
Common emitter
= 2 V
Single nonrepetitive pulse
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm2)
(1) Single-device operation
V
CE
(1)
(2) Single-device value at dual operation
(2)
Ta = 100°C
−55°C
1
0
25°C
0
0
20
40
60
80
100
120
140
160
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (°C)
Base−emitter saturation voltage
V
BE
(V)
(2)
3
2004-05-11
TPCP8701
r
– t
w
th
1000
100
10
(2)
(1)
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
(1) Single-device operation
(2) Single-device value at dual operation
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Permissible Power Dissipation for
Simultaneous Operation
Safe operating area
10
1.0
DC operation
Ta = 25°C
10 ms※ 1 ms※
100 µs※
I
C
max (Pulsed)※
Mounted on an FR4 board glass epoxy,
I
max (Continuous)*
10 µs※
C
1.6 mm thick, Cu area: 645 mm2)
0.8
0.6
0.4
10 s※*
100 ms※*
1
DC operation
Ta = 25°C
※:Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
0.1
0.2
0
0
0.2
0.4
0.6
0.8
1.0
Permissible power dissipation for Q1
PC (W)
0.01
0.1
1
10
100
Collector power dissipation at the single-device
operation is 0.94W.
Collector−emitter voltage
V
CE
(V)
Collector power dissipation at the single-device value at
dual operation is 0.54W.
Collector power dissipation at the dual operation is set
to 1.08W.
4
2004-05-11
TPCP8701
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-05-11
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