TPD7102F(TE85L) [TOSHIBA]

IC,SINGLE MOSFET DRIVER,FP,8PIN,PLASTIC;
TPD7102F(TE85L)
型号: TPD7102F(TE85L)
厂家: TOSHIBA    TOSHIBA
描述:

IC,SINGLE MOSFET DRIVER,FP,8PIN,PLASTIC

驱动 光电二极管
文件: 总16页 (文件大小:261K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TPD7102F  
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit  
TPD7102F  
1 channel High-Side N channel Power MOSFET Gate Driver  
TPD7102F is a 1channel high-side N channel power MOSFET gate  
driver. This IC contains a charge pump circuit, allowing easy configuration  
of a high-side switch for large-current applications.  
Features  
z Charge pump circuit is built in  
z The diagnosis function of the voltage between OUT1 and SOURCE is  
built in  
z Housed in the PS-8 package and supplied in embossed carrier tape.  
SON8-P-0303-0.65  
Weight: 0.017g (typ.)  
Pin Assignment (top view)  
Marking  
Part No.  
(or abbreviation code)  
DIAG 1  
ENB 2  
IN 3  
8 V  
DD  
D7102  
Lot No.  
7 OUT1  
6 OUT2  
GND 4  
5 SOURCE  
Note:on the lower left of the marking indicates Pin 1  
*Weekly code: (Three digits)  
(TOP VIEW)  
Week of manufacture  
(01 for first week of year, continuing up to 52 or 53)  
Year of manufacture  
(The last digit of the calendar year)  
Please contact your TOSHIBA sales representative for details  
as to environmental matters such as the RoHS compatibility of  
Product.  
The RoHS is the Directive 2002/95/EC of the European  
Parliament and of the Council of 27 January 2003 on the  
restriction of the use of certain  
Note:That because of its MOS structure, this product is sensitive to static electricity.  
1
2011-12-26  
TPD7102F  
Block Diagram / Application circuit  
BATT  
V
DD  
Output  
voltage  
protection  
Regulator  
(V  
Constant  
Current Driver  
1mA →  
OUT1  
)
REG  
OUT2  
V
+10V  
DD  
Charge  
pump  
5k  
1MΩ  
Oscillation  
Circuit  
IN  
SOURCE  
ENB  
Input Logic  
Load  
5V  
OUT1-SOURCE voltage (VGS) monitor circuit  
DIAG  
AMP  
1/7  
COMP  
Diagnosis  
Logic  
Filter  
(2.2μs)  
GND  
2
2011-12-26  
TPD7102F  
Pin Description  
Pin No.  
Symbol  
Function  
1
2
3
4
5
6
7
8
DIAG  
ENB  
IN  
Diagnosis detection pin. N channel open drain.  
Enable pin. The ENB pin has a pull-down resistor. When V  
is L, OUT1 is Hz and OUT2 is L.  
ENB  
Input pin. The IN pin has a pull-down resistor. When V and V  
IN  
are H, OUT1 and OUT2 are H.  
ENB  
GND  
Ground pin.  
SOURCE Source voltage of the external power MOSFET monitor pin.  
OUT2  
OUT1  
Output pin 2.  
Output pin 1.  
V
Power supply pin.  
DD  
Timing Chart  
V
over voltage detection  
DD  
Operating supply voltage V min  
DD  
V
V
V
DD  
ENB  
IN  
H
L
H
L
Operating  
Not operating  
Charge pump  
V
over voltage  
DD  
protection (Oscillation stop)  
H
H
H
Hz(High impedance)  
V
V
OUT1  
OUT2  
L
V
under voltage  
GS  
V
(V  
GS  
detection.  
L
-V  
)
OUT1 SOURCE  
Hz(High impedance)  
L
V
DIAG  
Normal  
V
under  
GS  
(Normality V  
)
GS  
voltage detection  
Note: IN and ENB apply H, after V  
applied operating supply voltage.  
DD  
3
2011-12-26  
TPD7102F  
Truth Table  
IN  
ENB  
Charge pump  
circuit  
V
V
V
GS  
DIAG  
Mode  
OUT1  
OUT2  
signal signal  
L
H
L
L
L
Hz  
Hz  
Hz  
H
L
L
L
H
L
L
L
H
L
L
L
H
L
L
L
H
Hz  
Hz  
Hz  
L
Oscillation stop  
Oscillation  
V
=H  
GS  
H
H
L
Normal  
(V =7 to 18V)  
H
L
Hz  
Hz  
Hz  
H
Hz  
Hz  
Hz  
Hz  
Hz  
Hz  
Hz  
L
DD  
Oscillation stop  
Oscillation  
H
L
L
V
=L  
GS  
H
H
L
H
L
Hz  
Hz  
Hz  
H
H
L
L
V
=H  
GS  
H
H
L
H
L
V
over volatage  
DD  
Oscillation stop  
(V >18V)  
DD  
Hz  
Hz  
Hz  
H
Hz  
Hz  
Hz  
Hz  
H
L
L
V
=L  
GS  
H
H
H
Note: V =H(V >V  
) / V =L(V V  
GS GS GSUV  
)
*V =V  
-V  
GS  
GS GSUV  
GS OUT1 SOURCE  
Note: Hz: High impedance  
* DIAG is L only when V and V  
IN  
and V  
are H.  
GS  
ENB  
4
2011-12-26  
TPD7102F  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Remarks  
DC  
V
V
-0.3 to 25  
35  
V
V
DD(1)  
DD(2)  
Power supply voltage  
Pulse  
t=400ms single pulse  
Input voltage  
V
-0.3 to 6  
-0.3 to 25  
2
V
IN  
Diagnosis output voltage  
Diagnosis output current  
Output sink current(DC)  
V
V
DIAG  
DIAG  
I
mA  
mA  
V
I
(+)  
5
Sink current  
t0.1μs, SOURCE pin 10kconnect  
OUT2  
SOURCE pin negative voltage  
Power dissipation (Note 1-a)  
Power dissipation (Note 1-b)  
Operating temperature  
-V  
-7  
SOURCE  
P
P
0.7  
W
W
°C  
°C  
°C  
D(1)  
D(2)  
0.35  
T
opr  
-40 to 125  
150  
Junction temperature  
T
j
Strage temperature  
T
stg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Thermal Resistance  
Characteristic  
Symbol  
Rating  
Unit  
178.6(Note 1-a)  
357.2(Note 1-b)  
Thermal resistance, junction to ambient  
R
°C / W  
th (j–a)  
Note 1:  
(a)Glass epoxy board  
(b)Glass epoxy board  
Glass epoxy board  
Material: FR-4  
Glass epoxy board  
Material: FR-4  
25.4mm×25.4mm×0.8mm  
25.4mm×25.4mm×0.8mm  
5
2011-12-26  
TPD7102F  
Electrical Characteristics (Unless otherwise specified, T = -40 to 125°C, V = 7 to 18V)  
j
DD  
Characteristics  
Symbol  
Pin  
Test Condition  
Min  
7
Typ.  
12  
Max  
18  
Unit  
V
Operating supply voltage  
V
V
-
(Charge pump circuit, Input logic,  
Diagnosis logic operate)  
DD(OPR)  
DD  
I
V
V
-
-
0.35  
2
8
mA  
mA  
V
V
= 18V, V =V  
IN  
= 0V  
= 5V  
DD(off)  
DD  
DD  
DD  
DD  
ENB  
Supply current  
Input voltage  
I
3
-
= 18V, V =V  
IN  
DD(on)  
ENB  
V
-
-
3.5  
-
-
INH  
IN, ENB  
V
V
-
1.5  
INL  
V
=V = 5V  
IN ENB  
I
I
-
50  
-
200  
1
INH, ENBH  
*Each pin current  
=V = 0V  
Input current  
IN, ENB  
μA  
V
IN ENB  
*Each pin current  
I
I
-1  
INlL, ENBL  
V
V
= 9 to 18V, V =V =5V,  
IN ENB  
DD  
V
OUT1  
V
-2.7  
DD  
V
-1  
DD  
V
V
=V  
,
OUT1H  
DD  
SOURCE DD  
OUT1-SOURCE 1MΩ  
Output voltage  
V
V
= 9 to 18V, V =V  
=5V,  
DD  
SOURCE DD  
IN ENB  
V
V
V
DD  
DD  
DD  
V
OUT2  
OUT2  
V
=V  
,
OUT2H  
+ 6.0  
+10  
+12.5  
OUT2-SOURCE 1MΩ  
V
= 7 to 18V, V =V  
= 0V,  
DD  
IN ENB  
OUT2 sink DMOS ON-Resistance  
R
-
70  
180  
ONOUT2L  
I
=1mA  
OUT2  
IOH1  
IOL1  
OUT1  
OUT1  
OUT1  
V
V
V
=9 to 18V, V =V  
=5V  
-
-1  
-
-1.0  
-0.15  
-
mA  
μA  
μA  
OUT1 high level output current  
OUT1 output leakage current  
OUT1 sink current  
DD  
IN ENB  
=9 to 18V, V =V  
=0V  
-
DD  
IN ENB  
I
=12V,V =V =0V  
5
20  
OUT1+  
IOH2  
OUT1  
IN ENB  
V
V
V
V
=9 to 18V, V =V =5V,  
DD IN ENB  
OUT2  
DIAG  
DIAG  
-
-
-100  
-
-30  
10  
μA  
μA  
V
OUT2 output current  
=V +6V  
OUT2 DD  
= 7 to 18V, V =V  
=0V  
DD  
IN ENB  
Diagnosis output leakage current  
I
DIAGH  
= 5V  
DIAG  
V
= 7 to 18V, V =V  
IN ENB  
=5V  
DD  
Diagnosis output voltage  
V
-
-
0.4  
4.8  
DIAGL  
I
= 1mA  
DIAG  
OUT1,  
SOURCE  
V
under voltage detection  
GS  
(OUT1-SOURCE voltage)  
V
V
V
= 9 to 18V, V =V  
DD IN ENB  
=5V  
3.3  
4.1  
V
V
GSUV  
V
over voltage detection  
V
-
18  
-
22  
16  
2
25  
100  
10  
DD  
DDOV  
DD  
t
t
on  
off  
Switching time  
INOUT1  
μs  
Refer to Test circuit 7  
-
Note: Typical condition is V =12V, T =25°C.  
DD  
j
Note: Sink current to this IC is expressed by “+”, source current from this IC is expressed by “-”.  
6
2011-12-26  
TPD7102F  
Test circuit 1  
Supply current I  
DD(off)  
I
DD(off)  
DIAG  
ENB  
IN  
V
A
DD  
OUT1  
OUT2  
18V  
GND  
SOURCE  
Test circuit 2  
Supply current I  
DD(on)  
I
DD(on)  
DIAG  
ENB  
IN  
V
A
DD  
OUT1  
OUT2  
18V  
GND  
SOURCE  
5V  
Test circuit 3  
Output voltage V  
OUT1H  
DIAG  
ENB  
IN  
V
DD  
OUT1  
OUT2  
V
GND  
SOURCE  
5V  
9 to 18V  
Test circuit 4  
Output voltage V  
OUT2H  
DIAG  
ENB  
IN  
V
DD  
OUT1  
OUT2  
GND  
SOURCE  
V
5V  
9 to 18V  
Test circuit 5  
OUT1 high level output current IOH1  
DIAG  
ENB  
IN  
V
DD  
OUT1  
I
OH1  
OUT2  
A
GND  
SOURCE  
5V  
9 to 18V  
7
2011-12-26  
TPD7102F  
Test circuit 6  
V
under voltage detection  
GS  
DIAG  
ENB  
V
DD  
V
GS  
OUT1  
OUT2  
=V  
-V  
V
under voltage detection  
GS  
OUT1 SOURCE  
IN  
GND  
V
V
GS  
SOURCE  
V
DIAG  
5V  
9 to 18V  
Test circuit 7  
Switching time t , t  
on off  
t 0.1μs  
r
t 0.1μs  
f
DIAG  
ENB  
IN  
V
DD  
90%  
10%  
OUT1  
OUT2  
V
V
IN  
5kΩ  
GND  
SOURCE  
V
+4V  
DD  
V
5V  
P.G  
9V  
OUT1  
1.5V  
t
off  
t
on  
8
2011-12-26  
TPD7102F  
I
- V  
I
- T  
DD j  
DD  
DD  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
V
V
=18V  
=5V  
T =25°C  
DD  
j
V
=5V  
ENB  
ENB  
V
=5V  
IN  
V
V
=5V  
=0V  
IN  
V
=0V  
IN  
IN  
0
0
0
4
4
4
8
12  
16  
20  
20  
20  
-80  
-40  
-40  
-40  
0
40  
80  
120  
160  
160  
160  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
V
,V - T  
IH IL  
V
,V - V  
IH IL  
j
DD  
4.0  
3.0  
2.0  
1.0  
4.0  
3.0  
2.0  
1.0  
T =25°C  
j
V
=12V  
DD  
V
V
IH  
IH  
V
V
IL  
IL  
8
12  
16  
-80  
0
40  
80  
120  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
V
,V  
- V  
V
,V - T  
INH INL j  
INH INL  
DD  
4.0  
3.0  
2.0  
1.0  
4.0  
3.0  
2.0  
1.0  
T =25°C  
j
V
=12V  
DD  
V
V
INH  
INH  
V
INL  
V
INL  
8
12  
16  
-80  
0
40  
80  
120  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
9
2011-12-26  
TPD7102F  
I
- V  
I
- T  
INH j  
IN  
IN  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
T =25°C  
j
V
=5V  
IN  
0
0
0
2
4
6
8
-80  
-80  
-80  
-40  
-40  
-40  
0
40  
80  
120  
160  
Input voltage V [V]  
IN  
Junction temperature T [°C]  
j
I
- V  
I
- T  
ENBH j  
ENB  
ENB  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
T =25°C  
j
V
V
=12V  
DD  
=5V  
ENB  
2
4
6
8
0
40  
80  
120  
160  
Input voltage V  
[V]  
ENB  
Junction temperature T [°C]  
j
V
- T  
j
V
- V  
DD  
OUT1H  
OUT1H  
20  
16  
12  
8
20  
16  
12  
8
V
V
=12V  
DD  
T =25°C  
j
=V  
IN ENB  
=5V  
V
=V  
IN ENB  
=5V  
4
4
0
0
0
40  
80  
120  
160  
4
8
12  
16  
20  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
10  
2011-12-26  
TPD7102F  
ΔV  
- V  
ΔV  
- T  
OUT1H j  
OUT1H  
DD  
3.0  
2.0  
1.0  
0.0  
3.0  
2.0  
1.0  
0.0  
T =25°C  
V
V
=12V  
DD  
j
V
=V  
IN ENB  
=5V  
=V =5V  
IN ENB  
0
0
0
4
8
12  
16  
20  
-80  
-80  
-80  
-40  
-40  
-40  
0
40  
80  
120  
160  
160  
160  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
V
- V  
V
- T  
OUT2H j  
OUT2H  
DD  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
T =25°C  
V
V
=12V  
DD  
j
V
=V  
IN ENB  
=5V  
=V =5V  
IN ENB  
4
8
12  
16  
20  
0
40  
80  
120  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
ΔV  
- T  
j
ΔV  
- V  
DD  
OUT2H  
OUT2H  
20  
16  
12  
8
20  
16  
12  
8
T =25°C  
V
V
=12V  
DD  
j
V
=V  
IN ENB  
=5V  
=V =5V  
IN ENB  
4
4
0
0
4
8
12  
16  
20  
0
40  
80  
120  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
11  
2011-12-26  
TPD7102F  
ΔV  
– - I  
OUT2  
OUT2  
12  
10  
8
18V  
12V  
8V  
9V  
=7V  
V
DD  
6
4
2
T =25°C  
j
V
=V =5V  
ENB IN  
0
1
10  
100  
Output current - I  
[μA]  
OUT2  
R
- V  
R
- T  
ONOUT2L  
DD  
ONOUT2L j  
160  
120  
80  
40  
0
160  
120  
80  
40  
0
T =25°C  
V
V
=12V  
DD  
j
V
=V  
=0V  
=1mA  
=V  
=5V  
=1mA  
IN ENB  
IN ENB  
I
I
OUT2  
OUT2  
0
4
8
12  
16  
20  
-80  
-40  
0
40  
80  
120  
160  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
I
- V  
I
- T  
OH1 j  
OH1  
DD  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
0.0  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
0.0  
T =25°C  
V
V
=12V  
DD  
j
V
=V  
IN ENB  
=5V  
=V =5V  
IN ENB  
0
4
8
12  
16  
20  
-80  
-40  
0
40  
80  
120  
160  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
12  
2011-12-26  
TPD7102F  
I
- T  
j
OUT1+  
20  
16  
12  
8
V
V
=V  
=12V  
=0V  
DD OUT1  
=V  
IN ENB  
4
0
-80  
-40  
0
40  
80  
120  
160  
Junction temperature T [°C]  
j
V
- V  
V
- T  
DL j  
DL  
DD  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T =25°C  
V
=12V  
DD  
j
I
=1mA  
I
=1mA  
DIAG  
DIAG  
0
4
8
12  
16  
20  
-80  
-40  
0
40  
80  
120  
160  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
V
- T  
j
V
- V  
DD  
GSUV  
GSUV  
5.0  
4.6  
4.2  
3.8  
3.4  
3.0  
5.0  
4.6  
4.2  
3.8  
3.4  
3.0  
T =25°C  
j
V
=12V  
DD  
0
4
8
12  
16  
20  
-80  
-40  
0
40  
80  
120  
160  
Supply voltage V [V]  
DD  
Junction temperature T [°C]  
j
13  
2011-12-26  
TPD7102F  
P
- T  
a
V
- T  
j
D
DDOV  
25  
23  
21  
19  
17  
15  
1.00  
0.80  
0.60  
0.40  
0.20  
0.00  
(1)Mount on glass epoxy board (a) (Note 1-a)  
(2)Mount on glass epoxy board (b) (Note 1-b)  
(1)  
(2)  
-80  
-40  
0
40  
80  
120  
160  
-40  
0
40  
80  
120  
160  
Junction temperature T [°C]  
Ambient temperature T [°C]  
a
j
14  
2011-12-26  
TPD7102F  
Package Dimensions  
SON8-P-0303-0.65  
Unitmm  
0.33±0.05  
M
A
0.05  
0.33±0.05  
B
0.17±0.02  
0.475  
0.65  
M
0.05  
B
2.9±0.1  
A
0.025  
S
S
Weight0.017g(Typ.)  
15  
2011-12-26  
TPD7102F  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR  
APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
16  
2011-12-26  

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