TPD7102F(TE85L) [TOSHIBA]
IC,SINGLE MOSFET DRIVER,FP,8PIN,PLASTIC;型号: | TPD7102F(TE85L) |
厂家: | TOSHIBA |
描述: | IC,SINGLE MOSFET DRIVER,FP,8PIN,PLASTIC 驱动 光电二极管 |
文件: | 总16页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPD7102F
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD7102F
1 channel High-Side N channel Power MOSFET Gate Driver
TPD7102F is a 1channel high-side N channel power MOSFET gate
driver. This IC contains a charge pump circuit, allowing easy configuration
of a high-side switch for large-current applications.
Features
z Charge pump circuit is built in
z The diagnosis function of the voltage between OUT1 and SOURCE is
built in
z Housed in the PS-8 package and supplied in embossed carrier tape.
SON8-P-0303-0.65
Weight: 0.017g (typ.)
Pin Assignment (top view)
Marking
Part No.
(or abbreviation code)
DIAG 1
ENB 2
IN 3
8 V
DD
D7102
Lot No.
7 OUT1
6 OUT2
GND 4
5 SOURCE
・Note:● on the lower left of the marking indicates Pin 1
*Weekly code: (Three digits)
(TOP VIEW)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Please contact your TOSHIBA sales representative for details
as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European
Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain
Note:That because of its MOS structure, this product is sensitive to static electricity.
1
2011-12-26
TPD7102F
Block Diagram / Application circuit
BATT
V
DD
Output
voltage
protection
Regulator
(V
Constant
Current Driver
1mA →
OUT1
)
REG
OUT2
V
+10V
DD
Charge
pump
5kΩ
1MΩ
Oscillation
Circuit
IN
SOURCE
ENB
Input Logic
Load
5V
OUT1-SOURCE voltage (VGS) monitor circuit
DIAG
AMP
1/7
COMP
Diagnosis
Logic
Filter
(2.2μs)
GND
2
2011-12-26
TPD7102F
Pin Description
Pin No.
Symbol
Function
1
2
3
4
5
6
7
8
DIAG
ENB
IN
Diagnosis detection pin. N channel open drain.
Enable pin. The ENB pin has a pull-down resistor. When V
is L, OUT1 is Hz and OUT2 is L.
ENB
Input pin. The IN pin has a pull-down resistor. When V and V
IN
are H, OUT1 and OUT2 are H.
ENB
GND
Ground pin.
SOURCE Source voltage of the external power MOSFET monitor pin.
OUT2
OUT1
Output pin 2.
Output pin 1.
V
Power supply pin.
DD
Timing Chart
V
over voltage detection
DD
Operating supply voltage V min
DD
V
V
V
DD
ENB
IN
H
L
H
L
Operating
Not operating
Charge pump
V
over voltage
DD
protection (Oscillation stop)
H
H
H
Hz(High impedance)
V
V
OUT1
OUT2
L
V
under voltage
GS
V
(V
GS
detection.
L
-V
)
OUT1 SOURCE
Hz(High impedance)
L
V
DIAG
Normal
V
under
GS
(Normality V
)
GS
voltage detection
Note: IN and ENB apply H, after V
applied operating supply voltage.
DD
3
2011-12-26
TPD7102F
Truth Table
IN
ENB
Charge pump
circuit
V
V
V
GS
DIAG
Mode
OUT1
OUT2
signal signal
L
H
L
L
L
Hz
Hz
Hz
H
L
L
L
H
L
L
L
H
L
L
L
H
L
L
L
H
Hz
Hz
Hz
L
Oscillation stop
Oscillation
V
=H
GS
H
H
L
Normal
(V =7 to 18V)
H
L
Hz
Hz
Hz
H
Hz
Hz
Hz
Hz
Hz
Hz
Hz
L
DD
Oscillation stop
Oscillation
H
L
L
V
=L
GS
H
H
L
H
L
Hz
Hz
Hz
H
H
L
L
V
=H
GS
H
H
L
H
L
V
over volatage
DD
Oscillation stop
(V >18V)
DD
Hz
Hz
Hz
H
Hz
Hz
Hz
Hz
H
L
L
V
=L
GS
H
H
H
Note: V =H(V >V
) / V =L(V ≤V
GS GS GSUV
)
*V =V
-V
GS
GS GSUV
GS OUT1 SOURCE
Note: Hz: High impedance
* DIAG is L only when V and V
IN
and V
are H.
GS
ENB
4
2011-12-26
TPD7102F
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Remarks
DC
V
V
-0.3 to 25
35
V
V
DD(1)
DD(2)
Power supply voltage
Pulse
t=400ms single pulse
Input voltage
V
-0.3 to 6
-0.3 to 25
2
V
IN
Diagnosis output voltage
Diagnosis output current
Output sink current(DC)
V
V
DIAG
DIAG
I
mA
mA
V
I
(+)
5
Sink current
t≤0.1μs, SOURCE pin 10kΩ connect
OUT2
SOURCE pin negative voltage
Power dissipation (Note 1-a)
Power dissipation (Note 1-b)
Operating temperature
-V
-7
SOURCE
P
P
0.7
W
W
°C
°C
°C
D(1)
D(2)
0.35
T
opr
-40 to 125
150
Junction temperature
T
j
Strage temperature
T
stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Resistance
Characteristic
Symbol
Rating
Unit
178.6(Note 1-a)
357.2(Note 1-b)
Thermal resistance, junction to ambient
R
°C / W
th (j–a)
Note 1:
(a)Glass epoxy board
(b)Glass epoxy board
Glass epoxy board
Material: FR-4
Glass epoxy board
Material: FR-4
25.4mm×25.4mm×0.8mm
25.4mm×25.4mm×0.8mm
5
2011-12-26
TPD7102F
Electrical Characteristics (Unless otherwise specified, T = -40 to 125°C, V = 7 to 18V)
j
DD
Characteristics
Symbol
Pin
Test Condition
Min
7
Typ.
12
Max
18
Unit
V
Operating supply voltage
V
V
-
(Charge pump circuit, Input logic,
Diagnosis logic operate)
DD(OPR)
DD
I
V
V
-
-
0.35
2
8
mA
mA
V
V
= 18V, V =V
IN
= 0V
= 5V
DD(off)
DD
DD
DD
DD
ENB
Supply current
Input voltage
I
3
-
= 18V, V =V
IN
DD(on)
ENB
V
-
-
3.5
-
-
INH
IN, ENB
V
V
-
1.5
INL
V
=V = 5V
IN ENB
I
I
-
50
-
200
1
INH, ENBH
*Each pin current
=V = 0V
Input current
IN, ENB
μA
V
IN ENB
*Each pin current
I
I
-1
INlL, ENBL
V
V
= 9 to 18V, V =V =5V,
IN ENB
DD
V
OUT1
V
-2.7
DD
V
-1
DD
V
V
=V
,
OUT1H
DD
SOURCE DD
OUT1-SOURCE 1MΩ
Output voltage
V
V
= 9 to 18V, V =V
=5V,
DD
SOURCE DD
IN ENB
V
V
V
DD
DD
DD
V
OUT2
OUT2
V
=V
,
OUT2H
+ 6.0
+10
+12.5
OUT2-SOURCE 1MΩ
V
= 7 to 18V, V =V
= 0V,
DD
IN ENB
OUT2 sink DMOS ON-Resistance
R
-
70
180
Ω
ONOUT2L
I
=1mA
OUT2
IOH1
IOL1
OUT1
OUT1
OUT1
V
V
V
=9 to 18V, V =V
=5V
-
-1
-
-1.0
-0.15
-
mA
μA
μA
OUT1 high level output current
OUT1 output leakage current
OUT1 sink current
DD
IN ENB
=9 to 18V, V =V
=0V
-
DD
IN ENB
I
=12V,V =V =0V
5
20
OUT1+
IOH2
OUT1
IN ENB
V
V
V
V
=9 to 18V, V =V =5V,
DD IN ENB
OUT2
DIAG
DIAG
-
-
-100
-
-30
10
μA
μA
V
OUT2 output current
=V +6V
OUT2 DD
= 7 to 18V, V =V
=0V
DD
IN ENB
Diagnosis output leakage current
I
DIAGH
= 5V
DIAG
V
= 7 to 18V, V =V
IN ENB
=5V
DD
Diagnosis output voltage
V
-
-
0.4
4.8
DIAGL
I
= 1mA
DIAG
OUT1,
SOURCE
V
under voltage detection
GS
(OUT1-SOURCE voltage)
V
V
V
= 9 to 18V, V =V
DD IN ENB
=5V
3.3
4.1
V
V
GSUV
V
over voltage detection
V
-
18
-
22
16
2
25
100
10
DD
DDOV
DD
t
t
on
off
Switching time
IN→OUT1
μs
Refer to Test circuit 7
-
Note: Typical condition is V =12V, T =25°C.
DD
j
Note: Sink current to this IC is expressed by “+”, source current from this IC is expressed by “-”.
6
2011-12-26
TPD7102F
Test circuit 1
Supply current I
DD(off)
I
DD(off)
DIAG
ENB
IN
V
A
DD
OUT1
OUT2
18V
GND
SOURCE
Test circuit 2
Supply current I
DD(on)
I
DD(on)
DIAG
ENB
IN
V
A
DD
OUT1
OUT2
18V
GND
SOURCE
5V
Test circuit 3
Output voltage V
OUT1H
DIAG
ENB
IN
V
DD
OUT1
OUT2
V
GND
SOURCE
5V
9 to 18V
Test circuit 4
Output voltage V
OUT2H
DIAG
ENB
IN
V
DD
OUT1
OUT2
GND
SOURCE
V
5V
9 to 18V
Test circuit 5
OUT1 high level output current IOH1
DIAG
ENB
IN
V
DD
OUT1
I
OH1
OUT2
A
GND
SOURCE
5V
9 to 18V
7
2011-12-26
TPD7102F
Test circuit 6
V
under voltage detection
GS
DIAG
ENB
V
DD
V
GS
OUT1
OUT2
=V
-V
V
under voltage detection
GS
OUT1 SOURCE
IN
GND
V
V
GS
SOURCE
V
DIAG
5V
9 to 18V
Test circuit 7
Switching time t , t
on off
t ≤0.1μs
r
t ≤0.1μs
f
DIAG
ENB
IN
V
DD
90%
10%
OUT1
OUT2
V
V
IN
5kΩ
GND
SOURCE
V
+4V
DD
V
5V
P.G
9V
OUT1
1.5V
t
off
t
on
8
2011-12-26
TPD7102F
I
- V
I
- T
DD j
DD
DD
5.0
4.0
3.0
2.0
1.0
0.0
5.0
4.0
3.0
2.0
1.0
0.0
V
V
=18V
=5V
T =25°C
DD
j
V
=5V
ENB
ENB
V
=5V
IN
V
V
=5V
=0V
IN
V
=0V
IN
IN
0
0
0
4
4
4
8
12
16
20
20
20
-80
-40
-40
-40
0
40
80
120
160
160
160
Supply voltage V [V]
DD
Junction temperature T [°C]
j
V
,V - T
IH IL
V
,V - V
IH IL
j
DD
4.0
3.0
2.0
1.0
4.0
3.0
2.0
1.0
T =25°C
j
V
=12V
DD
V
V
IH
IH
V
V
IL
IL
8
12
16
-80
0
40
80
120
Supply voltage V [V]
DD
Junction temperature T [°C]
j
V
,V
- V
V
,V - T
INH INL j
INH INL
DD
4.0
3.0
2.0
1.0
4.0
3.0
2.0
1.0
T =25°C
j
V
=12V
DD
V
V
INH
INH
V
INL
V
INL
8
12
16
-80
0
40
80
120
Supply voltage V [V]
DD
Junction temperature T [°C]
j
9
2011-12-26
TPD7102F
I
- V
I
- T
INH j
IN
IN
100
80
60
40
20
0
100
80
60
40
20
0
T =25°C
j
V
=5V
IN
0
0
0
2
4
6
8
-80
-80
-80
-40
-40
-40
0
40
80
120
160
Input voltage V [V]
IN
Junction temperature T [°C]
j
I
- V
I
- T
ENBH j
ENB
ENB
100
80
60
40
20
0
100
80
60
40
20
0
T =25°C
j
V
V
=12V
DD
=5V
ENB
2
4
6
8
0
40
80
120
160
Input voltage V
[V]
ENB
Junction temperature T [°C]
j
V
- T
j
V
- V
DD
OUT1H
OUT1H
20
16
12
8
20
16
12
8
V
V
=12V
DD
T =25°C
j
=V
IN ENB
=5V
V
=V
IN ENB
=5V
4
4
0
0
0
40
80
120
160
4
8
12
16
20
Supply voltage V [V]
DD
Junction temperature T [°C]
j
10
2011-12-26
TPD7102F
ΔV
- V
ΔV
- T
OUT1H j
OUT1H
DD
3.0
2.0
1.0
0.0
3.0
2.0
1.0
0.0
T =25°C
V
V
=12V
DD
j
V
=V
IN ENB
=5V
=V =5V
IN ENB
0
0
0
4
8
12
16
20
-80
-80
-80
-40
-40
-40
0
40
80
120
160
160
160
Supply voltage V [V]
DD
Junction temperature T [°C]
j
V
- V
V
- T
OUT2H j
OUT2H
DD
40
30
20
10
0
40
30
20
10
0
T =25°C
V
V
=12V
DD
j
V
=V
IN ENB
=5V
=V =5V
IN ENB
4
8
12
16
20
0
40
80
120
Supply voltage V [V]
DD
Junction temperature T [°C]
j
ΔV
- T
j
ΔV
- V
DD
OUT2H
OUT2H
20
16
12
8
20
16
12
8
T =25°C
V
V
=12V
DD
j
V
=V
IN ENB
=5V
=V =5V
IN ENB
4
4
0
0
4
8
12
16
20
0
40
80
120
Supply voltage V [V]
DD
Junction temperature T [°C]
j
11
2011-12-26
TPD7102F
ΔV
– - I
OUT2
OUT2
12
10
8
18V
12V
8V
9V
=7V
V
DD
6
4
2
T =25°C
j
V
=V =5V
ENB IN
0
1
10
100
Output current - I
[μA]
OUT2
R
- V
R
- T
ONOUT2L
DD
ONOUT2L j
160
120
80
40
0
160
120
80
40
0
T =25°C
V
V
=12V
DD
j
V
=V
=0V
=1mA
=V
=5V
=1mA
IN ENB
IN ENB
I
I
OUT2
OUT2
0
4
8
12
16
20
-80
-40
0
40
80
120
160
Supply voltage V [V]
DD
Junction temperature T [°C]
j
I
- V
I
- T
OH1 j
OH1
DD
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
T =25°C
V
V
=12V
DD
j
V
=V
IN ENB
=5V
=V =5V
IN ENB
0
4
8
12
16
20
-80
-40
0
40
80
120
160
Supply voltage V [V]
DD
Junction temperature T [°C]
j
12
2011-12-26
TPD7102F
I
- T
j
OUT1+
20
16
12
8
V
V
=V
=12V
=0V
DD OUT1
=V
IN ENB
4
0
-80
-40
0
40
80
120
160
Junction temperature T [°C]
j
V
- V
V
- T
DL j
DL
DD
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0.0
T =25°C
V
=12V
DD
j
I
=1mA
I
=1mA
DIAG
DIAG
0
4
8
12
16
20
-80
-40
0
40
80
120
160
Supply voltage V [V]
DD
Junction temperature T [°C]
j
V
- T
j
V
- V
DD
GSUV
GSUV
5.0
4.6
4.2
3.8
3.4
3.0
5.0
4.6
4.2
3.8
3.4
3.0
T =25°C
j
V
=12V
DD
0
4
8
12
16
20
-80
-40
0
40
80
120
160
Supply voltage V [V]
DD
Junction temperature T [°C]
j
13
2011-12-26
TPD7102F
P
- T
a
V
- T
j
D
DDOV
25
23
21
19
17
15
1.00
0.80
0.60
0.40
0.20
0.00
(1)Mount on glass epoxy board (a) (Note 1-a)
(2)Mount on glass epoxy board (b) (Note 1-b)
(1)
(2)
-80
-40
0
40
80
120
160
-40
0
40
80
120
160
Junction temperature T [°C]
Ambient temperature T [°C]
a
j
14
2011-12-26
TPD7102F
Package Dimensions
SON8-P-0303-0.65
Unit;mm
0.33±0.05
M
A
0.05
0.33±0.05
B
0.17±0.02
0.475
0.65
M
0.05
B
2.9±0.1
A
0.025
S
S
Weight:0.017g(Typ.)
15
2011-12-26
TPD7102F
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2011-12-26
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