TS3300DB [TOUCHSTONE]

A 0.6-4.5VIN, 1.8-5.25VOUT, 3.5A, Low Input Voltage, High-Efficiency Boost LDO; 一个0.6-4.5VIN , 1.8-5.25VOUT , 3.5A ,低输入电压,高效率升压LDO
TS3300DB
型号: TS3300DB
厂家: TOUCHSTONE SEMICONDUCTOR INC    TOUCHSTONE SEMICONDUCTOR INC
描述:

A 0.6-4.5VIN, 1.8-5.25VOUT, 3.5A, Low Input Voltage, High-Efficiency Boost LDO
一个0.6-4.5VIN , 1.8-5.25VOUT , 3.5A ,低输入电压,高效率升压LDO

文件: 总4页 (文件大小:451K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TS3300 Demo Board  
A 0.6-4.5VIN, 1.8-5.25VOUT, 3.5µA, Low Input Voltage, High-Efficiency Boost + LDO  
FEATURES  
DESCRIPTION  
The demo board for the TS3300 is a completely  
assembled and tested circuit board that can be used  
for evaluating the TS3300. The TS3300 is a first  
generation Touchstone Semi power management  
Boost Regulator  
Input Voltage: 0.6V- 4.5V  
Output Voltage: 3V  
Shutdown Control Jumper  
Coilcraft 10µH Inductor (LPS4018-103ML)  
Resistor Pad Available for Anti-CrushTM  
Voltage Setting  
product that combines  
a
high-efficiency boost  
regulator and a low dropout linear regulator (LDO) in  
one package. The TS3300 LDO’s input is connected  
to the output of the boost regulator, serving as a post-  
regulator for the boost.  
LDO  
Output Voltage: 1.8V  
Shutdown Control Jumper  
Switch/FET Enable Jumper  
The TS3300 includes an anti-crushTM feature to  
prevent the collapse of the input voltage to the boost  
regulator when the input is a weak (high impedance)  
source. If the input voltage drops below a pre-  
determined voltage threshold (settable by a resistor  
divider), the boost regulator switching cycles are  
paused, effectively limiting the minimum input  
voltage. A pull-down resistor pad is available in order  
to set the anti-crushTM voltage.  
COMPONENT LIST  
DESIGNATION  
L1  
QTY DESCRIPTION  
1
2
3
1
2
2
1
10µH ±20% Shielded Inductor  
(4mmx4mm), LPS4018-103ML  
22µF ±10% capacitor (1206),  
445-8035-6-ND  
3.3nF ±10% capacitor (0603),  
445-5084-2-ND  
C1, C4  
C2, C3, C7  
C5  
The TS3300 boost regulator is set to an output  
voltage of 3V while the LDO is set to an output  
voltage of 1.8V via a resistor divider circuit. The boost  
regulator and the LDO can be shutdown separately  
via a jumper. The LDO switch/FET can be fully  
enhanced via a jumper. The TS3300 is fully specified  
over the -40°C to +85°C temperature range and is  
available in a low-profile, thermally-enhanced 16-pin  
3x3mm TQFN package with an exposed back-side  
paddle.  
10µF ±10% capacitor (0805),  
445-1371-2-ND  
R1, R6  
R3, R4  
R5  
1.37MΩ ± 1% (0805),  
311-1.37MCRTR-ND  
6.81MΩ ± 1% (0805),  
311-6.81MCRTR-ND  
2.61MΩ ± 1% (0805),  
541-2.61MCTR-ND  
TS3300  
U1  
1
5
BOOST,BOOST_OUT,  
REG_OUT, GND (2)  
J1, J2, J3  
Test points  
3
Jumper  
Product datasheet and additional documentation can  
be  
found  
on  
the  
factory web  
site  
at  
www.touchstonesemi.com.  
ORDERING INFORMATION  
Order Number  
Description  
TS3300  
Demo Board  
TS3300DB  
Figure 1. TS3300 Demo Board (Top View)  
Figure 2. TS3300 Demo Board (Bottom View)  
Page 1  
© 2013 Touchstone Semiconductor, Inc. All rights reserved.  
TS3300 Demo Board  
FB) pin is 505mV. It is recommended to use large  
resistor values to minimize additional current draw at  
the output. Resistors values less than 8MΩ are  
recommended. Boost output voltage can be set by  
solving for R3 for a given R6 value in the following  
equation:  
DESCRIPTION  
The TS3300 boost regulator is set to an output  
voltage of 3V while the LDO is set to an output  
voltage of 1.8V via a resistor divider circuit. The boost  
regulator and the LDO can be shutdown separately  
via J1 and the combination of J2 and J3, respectively.  
The LDO switch/FET can be fully enhanced via the  
combination of J2 and J3. Refer to Table 1 and Table  
2. The complete demo board circuit is shown in  
Figure 6.  
 
ꢃO ꢄ 0.505 ꢀ6  
ꢀ3ꢁ  
0.505  
To set a 3V output voltage with R6 = 1.37MΩ, R3 is  
calculated to be 6.77MΩ. A 1% standard resistor  
value of 6.81MΩ is selected. This results in an output  
voltage of 3.02V.  
Resistor R1 in combination with R2 create a voltage  
divider circuit that sets the desired anti-crushTM  
voltage. The demo board does not include R2. Refer  
to the TS3300 product datasheet “Applications  
Information” section for more details.  
LDO OUTPUT VOLTAGE SETTING  
The LDO output voltage can be set independently of  
the boost, via a voltage divider circuit as shown in  
Figure 4.  
SW EN  
REG EN  
Jumper Jumper  
CONDITION  
FUNCTION  
J2  
J3  
REG FB  
connected to  
R4, R5  
LDO Normal  
Operation  
REG FB  
connected to BO  
low  
high  
LDO  
Shutdown  
pin  
(See Quick Start  
Procedure, step 6)  
Figure 4: Setting the LDO Output Voltage  
with a Voltage Divider  
Internal FET  
Hard-on  
high  
low  
Table 1. LDO REG EN(J3) and SW EN(J2)Settings  
The output feedback (REG FB) pin is 505mV. It is  
recommended to use large resistor values to  
minimize additional current drawn from the output.  
The LDO output voltage can be set by solving for R4  
for a given R5 value in the following equation:  
ꢁꢁꢁꢁꢁꢁꢁ  
 ꢀꢁ  
Jumper  
J1  
FUNCTION  
 
ꢀꢆꢇOꢈT ꢄ 0.505 ꢀ5  
low  
Boost Enabled  
ꢀꢅꢁ  
0.505  
high  
Boost Shutdown  
Table 2. Boost Regulator Shutdown/Enable Settings  
To set a 1.8V output voltage with R4 = 2.61MΩ, R4 is  
calculated to be 6.69MΩ. A 1% standard resistor  
value of 6.81MΩ is selected. This results in an output  
voltage of 1.82V.  
BOOST REGULATOR OUTPUT VOLTAGE  
SETTING  
ANTI-CRUSHTM VOLTAGE SETTING  
The output voltage can be set via a voltage divider  
circuit as shown in Figure 3. The output feedback (BO  
To set the anti-crushTM voltage, a feedback pin (BI  
FB) in conjunction with a voltage divider circuit can be  
implemented as shown in Figure 5. The feedback pin  
voltage is 392mV. It is recommended to use large  
resistor values to minimize additional current draw at  
the input.  
Figure 3: Setting the Boost Output Voltage  
with a Voltage Divider  
TS3300DB r1p0  
Page 2  
RTFDS  
TS3300 Demo Board  
To evaluate the TS3300 the following steps are to be  
performed:  
1) Connect the battery positive terminal to the test  
point labeled BOOST. Connect the negative  
terminal of the battery to the test point labeled  
GND.  
Figure 5: Setting the Anti-CrushTM Voltage  
2) To monitor the boost regulator output voltage,  
connect the positive terminal of the voltmeter to  
the test point labeled BOOST_OUT. Connect the  
negative terminal of the voltmeter to the test point  
labeled GND. The output voltage should be  
approximately 3.02V.  
with a Voltage Divider  
Using the following equation to solve for R1 for a  
given R2 value, the output voltage can be set:  
ꢉꢊTIꢄꢋꢀꢈSꢌ ꢄ 0.3ꢍ2ꢀ2  
TM  
ꢀ1ꢁ  
3) To monitor the LDO output voltage, connect the  
positive terminal of the voltmeter to the test point  
labeled BOOST_OUT. Connect the negative  
terminal of the voltmeter to the test point labeled  
0.3ꢍ2  
To set a 0.8V output voltage with R2 = 1.37MΩ, R1 is  
calculated to be 1.42MΩ. A 1% standard resistor  
value of 1.37MΩ is selected. This results in an anti-  
crush voltage of 784mV. The anti-crushTM voltage is  
to be set above the minimum input voltage  
specification of the TS3300. Refer to the TS3300  
product datasheet “ꢉpplications Information” section  
for more details.  
GND.  
The  
output  
voltage  
should  
be  
approximately 1.82V.  
ꢁꢁꢁꢁꢁꢁ  
4) To shutdown the boost regulator only, set ꢃꢆꢊ  
to a high state via jumper J1. The output will drop  
to approximately 1.16V.  
5) To enable the LDO internal switch/FET, set SW  
EN to a high state and REG EN to a low state via  
jumper J2 and J3, respectively. The LDO output  
voltage should be equal to the boost output  
voltage.  
QUICK START PROCEDURE  
Required Equipment  
TS3300 Demo Board  
6) To shutdown the LDO only, remove the battery.  
Then, remove resistor R5. Solder one side of a  
wire to the bottom side of capacitor C7. Now  
solder the other side of the wire to the  
BOOST_OUT test point. The LDO output voltage  
should be approximately 0V.  
1.2V Battery  
Two Digital Multimeters  
Solder Iron ( for LDO shutdown only)  
Figure 6. TS3300 Demo Board Circuit  
TS3300DB r1p0  
Page 3  
RTFDS  
TS3300 Demo Board  
Figure 7. Top Layer View #1  
Figure 8. Top Layer View #2  
Figure 10. Bottom Layer (GND) #2  
Figure 9. Bottom Layer (GND) #1  
Page 4 Touchstone Semiconductor, Inc.  
TS3300DB r1p0  
630 Alder Drive, Milpitas, CA 95035  
+1 (408) 215 - 1220 www.touchstonesemi.com  
RTFDS  

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