QPD1020SQ [TRIQUINT]
2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor;
| 型号： | QPD1020SQ |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 2.7 â 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor |
| 文件： | 总22页 (文件大小：1268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Product Overview
The Qorvo QPD1020 is a 30 W (P3dB), 50 -input matched
discrete GaN on SiC HEMT which operates from 2.7 to 3.5
GHz and 50 V supply. The integrated input matching
network enables wideband gain and power performance,
while the output can be matched on board to optimize
power and efficiency for any region within the band.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
6 x 5 x 1.09 mm DFN
Key Features
• Frequency: 2.7 to 3.5 GHz
• Output Power (P3dB)1: 31 W
• Linear Gain1: 18.4 dB
• Typical PAE3dB1: 64 %
Functional Block Diagram
• Operating Voltage: 50 V
• CW and Pulse capable
1
8
Note 1: @ 3.1 GHz Load Pull
7
6
2
3
Input
Matching
NW
Applications
5
4
•
Military radar
• Civilian radar
• Test instrumentation
Ordering info
Part No.
ECCN Description
QPD1020S2
QPD1020SQ
QPD1020SR
EAR99
EAR99
EAR99
Sample of 2 QPD1020
Sample of 25 QPD1020
Sample of 100 QPD1020
2.7 – 3.1 GHz EVB
QPD1020EVB01 EAR99
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 1 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Min Typ Max Units
Parameter
Rating
Units
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
−40 +25 +85
+32 +50 +55
52.5
ꢁ°C
V
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, IDMAX
+145
-7 to +2.0
4.1
V
V
mA
mA
V
A
4
Drain Current, ID
–
–
–
100
−2.8
–
–
–
Gate Current Range, IG
See page 15.
30
mA
W
3
Gate Voltage, VG
2
Power Dissipation, PDISS
Channel Temperature (TCH)
250
°C
RF Input Power, Pulse, 2.9
GHz, T = 25ꢀ°C2
+33
275
dBm
°C
Power Dissipation (PD),
Pulsed2,4
Power Dissipation (PD), CW2
–
–
–
–
27
W
W
Channel Temperature, TCH
18.5
Mounting Temperature
(30ꢀSeconds)
320ꢁ
°C
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. To be adjusted to desired IDQ
4. 100uS PW, 20% DC
Storage Temperature
Notes:
−65 to +150
°C
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Pulsed 100uS PW, 20% DC
Measured Load Pull Performance – Power Tuned1
Typical Values
Parameter
Units
GHz
V
Frequency, F
2.7
50
3.1
50
3.5
50
Drain Voltage, VD
Drain Bias Current, IDQ
52.5
52.5
52.5
mA
Output Power at 3dB
compression, P3dB
45.2
44.9
45
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
55
14
53.7
15.4
56.7
15.4
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
dB
2. Characteristic Impedance, Zo = 33.4 Ω.
Measured Load Pull Performance – Efficiency Tuned1
Parameter
Typical Values
Units
GHz
V
Frequency, F
2.7
50
3.1
50
3.5
50
Drain Voltage, VD
Drain Bias Current, IDQ
52.5
52.5
52.5
mA
Output Power at 3dB
compression, P3dB
43.6
43.6
43.9
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
66.5
16.5
64.0
17.5
65
%
Gain at 3dB compression, G3dB
Notes:
1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle
16.3
dB
2. Characteristic Impedance, Zo = 33.4 Ω.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 2 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
2.7 – 3.1 GHz EVB 2.9 GHz Performance1
Parameter
Min
–
Typ
17
Max
Units
ꢁdB
Linear Gain, GLIN
–
–
Output Power at 3dB compression point, P3dB
–
25
W
Drain Efficiency at 3dB compression point,
DEFF3dB
–
–
57.6
14
–
–
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +50ꢁV, IDQ = 52.5ꢁmA, Temp = +25ꢁ°C, Pulse Width = 128 uS, Duty Cycle = 10%
RF Characterization – Mismatch Ruggedness at 2.9 GHz
Symbol Parameter
dB Compression
Typical
VSWR
Impedance Mismatch Ruggedness
3
ꢁ10:1
Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 52.5 mA, Pulsed, 128 uS Pulse Width, 10% Duty Cycle
Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 3 of 22 -
0
.
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 16 for load pull reference planes where the performance was measured.
2.7GHz, Load-pull
Zs(fo) = 38.11-10.27i
Zl(2fo) = 6.66-11.69i
Ω
Max Power is 45.2dBm
at Z = 11.89+8.169i
•
Ω
Ω
5
= -0.4285+0.2577i
Max Gain is 17.5dB
Γ
•
at Z = 4.59+16.044i
Ω
= -0.4285+0.2577i
Max PAE is 66.5%
Γ
•
at Z = 7.241+15.667i
= -0.431+0.5516i
Ω
Γ
17.1
16.6
65.7
53.7
55.7
57.7
44.9
14.1
13.6
13.1
44.7
45.1
Power
Gain
PAE
Zo = 33.4
Ω
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 4 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 16 for load pull reference planes where the performance was measured.
3.1GHz, Load-pull
0
.
5
Zs(fo) = 40.19-16.32i
Zl(2fo) = 6.38-8.66i
Ω
Max Power is 44.9dBm
at Z = 11.76+7.361i
•
Ω
Ω
= -0.4409+0.2349i
Max Gain is 18.9dB
Γ
•
at Z = 4.287+12.628i
= -0.4409+0.2349i
Ω
Γ
Max PAE is 64%
at Z = 6.77+12.373i
•
Ω
= -0.5188+0.4678i
Γ
18.6
63
18.1
17.6
51
53
55
15.6
15.1
14.6
44.8
44.6
44.4
Power
Gain
PAE
Zo = 33.4
Ω
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 5 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Measured Load-Pull Smith Charts1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 16 for load pull reference planes where the performance was measured.
3.5GHz, Load-pull
0
.
5
Zs(fo) = 35.39-14.88i
Zs(2fo) = 34.96-3.49i
Zl(2fo) = 6.31-8.63i
Ω
Max Power is 45dBm
at Z = 8.621+5.79i
•
Ω
Ω
Ω
= -0.5601+0.2149i
Max Gain is 17.4dB
Γ
•
at Z = 3.96+8.221i
Ω
= -0.5601+0.2149i
Max PAE is 65%
Γ
•
at Z = 6.471+10.165i
= -0.5731+0.4011i
Ω
Γ
17.3
16.8
64.1
54.1
56.1
58.1
15.8
15.3
44.5
44.7
44.9
14.8
Power
Gain
PAE
Zo = 33.4
Ω
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 6 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Typical Measured Performance – Load-Pull Drive-up1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 100 uS Pulse Width, 20% Duty Cycle
2. See page 16 for load-pull and source-pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
2.7 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
2.7 GHz - Power Tuned
22
21
20
19
18
17
16
15
14
13
12
100
90
80
70
60
50
40
30
20
10
0
20
19
18
17
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 38.11-10.27iΩ
Zl(1fo) = 7.24+15.67iΩ
Zs(1fo) = 38.11-10.27iΩ
Zl(1fo) = 11.89+8.17iΩ
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
Output Power [dBm]
Gain and PAE vs. Output Power
3.1 GHz - Power Tuned
Gain and PAE vs. Output Power
3.1 GHz - Efficiency Tuned
20
100
22
100
Gain
PAE
Gain
PAE
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
13
12
90
80
70
60
50
40
30
20
10
0
Zs(1fo) = 40.19-16.32iΩ
Zl(1fo) = 11.76+7.36iΩ
Zs(1fo) = 40.19-16.32iΩ
Zl(1fo) = 6.77+12.37iΩ
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
Output Power [dBm]
Gain and PAE vs. Output Power
3.5 GHz - Power Tuned
Gain and PAE vs. Output Power
3.5 GHz - Efficiency Tuned
20
100
22
100
Gain
PAE
Gain
PAE
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
21
20
19
18
17
16
15
14
13
12
90
80
70
60
50
40
30
20
10
0
Zs(1fo) = 35.39-14.88iΩ
Zl(1fo) = 8.62+5.79i
Zs(1fo) = 35.39-14.88iΩ
Zl(1fo) = 6.47+10.17iΩ
Ω
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Output Power [dBm]
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Output Power [dBm]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 7 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Power Driveup Performance Over Temperatures Of 2.7 – 3.1 GHz EVB1
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 128 uS Pulse Width, 10% Duty Cycle
P3dB Over Temperatures
DEFF3dB Over Temperatures
40
35
30
25
20
15
10
5
80
75
70
65
60
55
50
45
40
35
30
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
0
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
Frequency [GHz]
Frequency [GHz]
G3dB Over Temperatures
Pdiss3dB Over Temperatures
20
19
18
17
16
15
14
13
12
11
10
9
40
35
30
25
20
15
10
5
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
8
0
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
Frequency [GHz]
Frequency [MHz]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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- 8 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Power Driveup Performance At 25°C Of 2.7 – 3.1 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA, 128 uS Pulse Width, 10% Duty Cycle
P3dB At 25 °C
DEFF3dB At 25 °C
40
35
30
25
20
15
10
5
80
75
70
65
60
55
50
45
40
35
30
0
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
Frequency [GHz]
Frequency [GHz]
G3dB At 25 °C
Pdiss3dB At 25 °C
20
19
18
17
16
15
14
13
12
11
10
9
40
35
30
25
20
15
10
5
8
0
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 9 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
2-Tone 2.9 GHz Performance At 25°C Of 2.7 – 3.1 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA
2. Tone spacing = 1 MHz.
IMD @ 2.9GHz and 25degC
0
-10
-20
-30
-40
-50
-60
Lower IM3
Lower IM5
Upper IM3
Upper IM5
16
18
20
22
24
26
28
30
32
34
36
38
40
Average PEP [dBm]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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- 10 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Small Signal Performance At 25°C Of 2.7 – 3.1 GHz EVB1, 2
Notes:
1. Test Conditions: VD = 50 V, IDQ = 52.5 mA
2. K factor > 1 indicates unconditional stability.
S21
S11
30
20
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
10
0
-10
-20
-30
-40
-50
-60
-70
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Frequency [GHz]
Frequency [GHz]
S22
k-factor
0
-5
2
1.8
1.6
1.4
1.2
1
-10
-15
-20
-25
-30
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Frequency [GHz]
Frequency [GHz]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 11 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Thermal and Reliability Information – Pulsed1, 2, 3, 4
Maximum Channel Temperature vs. Pulse Width vs. Pdiss
20% Duty Cycle, QFN base fixed at 85 oC
300
280
260
240
220
200
180
160
140
120
Pdiss = 27.3 W
Pdiss = 25.2 W
Pdiss = 23.1 W
1E6 Operating Hour Limit
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
Pulse Width [sec]
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
5.9
221
3.8E7
3.8
°C/W
°C
85 °C Case
Hrs
°C/W
°C
23.1 W Pdiss, 100 uS PW, 20% DC
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
173
6.0
°C/W
°C
237
1.1E7
3.85
182
6.2
85 °C Case
Hrs
°C/W
°C
25.2 W Pdiss, 100 uS PW, 20% DC
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
°C/W
°C
253
3.4E6
3.9
85 °C Case
Hrs
°C/W
°C
27.3 W Pdiss, 100 uS PW, 20% DC
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Notes
191
1. Median Lifetime under pulsed condition is that under CW condition divided by duty cycle.
2. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise
noted, all thermal references are FEA.
3. Infrared (IR) thermal values are for reference only and should not be used to determine performance or reliability.
4. Thermal resistance measured to backside of package.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 12 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Thermal and Reliability Information - CW
Max Channel Temperature vs. Power
Surface of QFN Package Fixed at 85C
275
250
225
200
175
150
125
100
75
QPD1020
1E6 Hour Operating Limit
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
CW Power Dissipation [W]
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC)
7.9
185
1.7E8
5.3
°C/W
°C
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
85 °C Case
Hrs
°C/W
°C
12.6 W Pdiss, CW
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
152
8.6
°C/W
°C
229
4.1E6
5.5
85 °C Case
Hrs
°C/W
°C
16.8 W Pdiss, CW
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Thermal Resistance, FEA (θJC)
Peak Channel Temperature, FEA (TCH)
Median Lifetime (TM)1
177
9.4
°C/W
°C
282
9.5E4
5.9
85 °C Case
Hrs
°C/W
°C
21 W Pdiss, CW
Thermal Resistance, IR (θJC)
Peak Channel Temperature, IR (TCH)
Notes
208
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise
noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only and should not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 13 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Median Lifetime1
Median Lifetime vs. Channel Temperature
1.00E+19
1.00E+18
1.00E+17
1.00E+16
1.00E+15
1.00E+14
1.00E+13
1.00E+12
1.00E+11
1.00E+10
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (°C)
Notes:
1. Test Conditions: VD = +50ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing
.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
www.qorvo.com
- 14 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Maximum Gate Current
Maximum Gate Current Vs. Channel Temperature
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
120 130 140 150 160 170 180 190 200 210 220 230
Channel Temperature [°C]
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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- 15 of 22 -
QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Pin Configuration and Description1
Note 1: The QPD1020 will be marked with the “QPD1020” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
1
8
2
3
4
7
6
5
Load-Pull Reference Planes
Pin
2, 3
Symbol
RF IN / VG
RF OUT / VD
N/C
Description
Gate
Drain
6, 7
1, 4, 5, 8
9
No Connection
Source
Source / Ground / Backside of part (See next page.)
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Mechanical Drawing1
Note 1: Dimensions are in mm. Dimension tolerance is 0.1 mm, unless noted otherwise.
9
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
2.7 – 3.1 GHz Application Circuit - Schematic
Bias-up Procedure
1. Set VG to -4 V.
Bias-down Procedure
1. Turn off RF signal.
2. Set ID current limit to 60 mA.
3. Apply 50 V VD.
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge
4. Turn off VG
4. Slowly adjust VG until ID is set to 52.5 mA.
5. Set ID current limit to 120 mA (Pulsed operation)
6. Apply RF.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
2.7 – 3.1 GHz Application Circuit - Layout
Board material is RO4350B 0.020” thickness with 2oz copper cladding. Overall EVB size is 1.58” x 2.48”.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
2.7 – 3.1 GHz Application Circuit - Bill Of material
Description
Ref. Des.
C2
Manufacturer
AVX
Part Number
TPSC106K016R0500
06031C102KAT2A
08051C103JAT2A
600S4R7BT250XT
600S100FT250XT
600S1R0AT250XT
600S0R7AT250XT
600S220JT250XT
EEE-FK1K330P
Cap 10 UF +/-10% 16V LOW ESR TANT
CAP, 1000pF,100V, 10%, X7R, 0603
CAP 0.01 UF,100V,5%,X7R,LF,0805
CAP, 4.7 PF, 250V,0603,LF +/-.1P
CAP, 10PF,250V,1%,0603
C7, C10
C15, C16
C6
AVX
TTI
ATC
C3, C5, C9, C11
CR4
ATC
CAP, 1.0pF, +/-0.05pF, 250V, HI-Q
CAP, 0.7pF, +/-0.05pF, 250V, HI-Q
CAP, 22pF, +/-5%, 250V, HI-Q, 0603
ATC
C4
ATC
C12, C13
ATC
CAP, 33uF, 20%, 80V, ALUM ELEC,8mm SMD C1
Panasonic
ATC
CAP, 1.2pF, +/-0.05pF, 250V, C0G
RES, 2 OHM, 1%, 1/10W, 0603
RES, 1 OHM, 1%, 1/10, 0603
C8, C14
600S1R2AT250XT
CRCW06032R00FKEA
RC1608F1R0CS
R8, R9
R3, R7
R2, R5
R6
Vishay
Samsung
KOA
33 OHM,5%,0.1W,0603,LEAD FREE
10 OHM,1%,0.1W,0603,LEAD FREE
CONN, SMA, 4-HOLE PANEL MOUNT
RK73B1JTTD330J
RK73H1JTTD10R0F
PSF-S00-000
KOA
J1, J2
Gigalane
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Recommended Solder Temperature Profile
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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QPD1020
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
Handling Precautions
Parameter
Rating
Standard
Class 1A,
> 400V
ESDꢀ–ꢀHuman Body Model (HBM)
ESDAꢁ/ꢁJEDEC JS-001-2012
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) TBD
JEDEC JESD22-C101F
IPC/JEDEC J-STD-020
MSLꢀ–ꢀMoisture Sensitivity Level
TBD
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
Qorvo:
Web: www.Qorvo.com
Email: info-sales@qorvo.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
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herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
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INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
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injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet Rev. B, Sept. 18, 2017 | Subject to change without notice
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