TGA2625-CP [TRIQUINT]
10 to 11 GHz, 17 W GaN Power Amplifier;
| 型号： | TGA2625-CP |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 10 to 11 GHz, 17 W GaN Power Amplifier |
| 文件： | 总15页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Applications
Radar
Communications
Product Features
Functional Block Diagram
Frequency Range: 10 – 11 GHz
Pout: 42.5 dBm (at PIN = 15 dBm)
PAE: > 40 %
1
10
Power Gain: 28 dB (at PIN = 15 dBm)
2
3
9
8
Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical,
pulsed (PW = 100 µs, DC = 10 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
4
5
7
6
General Description
Pin Configuration
TriQuint’s TGA2625-CP is a packaged high-power
X-Band amplifier fabricated on TriQuint’s TQGaN25
0.25 um GaN on SiC process. Operating from 10 to
11 GHz, the TGA2625-CP achieves 42.5 dBm saturated
output power, a power-added efficiency of > 40 %, and
power gain of 28 dB.
Pad No.
1, 5
Symbol
VG
2, 4, 7, 9
GND
RFIN
3
6, 10
8
VD
RFOUT
The TGA2625-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under CW and pulsed conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2625-CP is ideally suited for both commercial
and defense applications.
Ordering Information
Lead free and RoHS compliant.
Part
ECCN
Description
10 – 11 GHz, 17 W
TGA2625-CP
3A001.b.2.b
Evaluation Boards are available upon request.
GaN Power Amplifier
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 1 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Value
40 V
Parameter
Drain Voltage (VD) pulsed:
PW = 100 µs, DC = 10 %
Value
28 V
Gate Voltage Range (VG)
Drain Current (ID)
-8 to 0 V
3 A
-6 to 14 (1) mA
Drain Current (IDQ
)
365 mA
Drain Current Under RF Drive (ID_DRIVE
Gate Voltage (VG)
)
See plots p. 6
−2.6 V (Typ.)
See plots p. 6
-40 to 85 °C
Gate Current (IG)
Power Dissipation (PDISS), 85°C
Input Power, CW, 50 Ω, (PIN)
53 W
Gate Current Under RF Drive (IG_DRIVE
Temperature (TBASE
)
21 dBm
)
Input Power, CW, VSWR 6:1,
VD = 28 V, 85 °C, (PIN)
21 dBm
275 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
260 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
(1) Max rating for IG is at Channel Temperature (TCH) of
200 °C
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 28 V (PW = 100 µs, DC = 10 %), IDQ = 365 mA, VG = -2.6 V typical.
Parameter
Operational Frequency Range
Min
10
Typical
Max
11
Units
GHz
dB
Small Signal Gain
36
> 13.5
> 10
42.5
40
Input Return Loss
dB
Output Return Loss
dB
Output Power (at PIN = 15 dBm)
Power Added Efficiency (at PIN = 15 dBm)
Power Gain (at PIN = 15 dBm)
dBm
%
28
dB
Output Power Temperature Coefficient
(25 °C to 85 °C only)
Pulsed
CW
-0.003
-0.01
dBm/°C
V
Recommended Operating Voltage
25
28
32
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 2 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value Units
Thermal Resistance (θJC) (1)
3.3
°C/W
CW, VD = 28 V, IDQ = 365 mA,
TBASE = 85°C, Freq = 10.5 GHz, PIN = 15 dBm,
POUT = 42.4 dBm PDISS =24 W, ID_Drive = 1.46 A
Channel Temperature (TCH) (under RF drive)
Median Lifetime (TM)
165
°C
3.6E+8
2.2
Hrs
°C/W
°C
Thermal Resistance (θJC) (1)
VD = 28 V, IDQ = 365 mA,
(Pulsed: PW = 100 µs, DC = 10 %),
TBASE = 85°C, Freq = 10.5 GHz, PIN = 15 dBm,
POUT = 42.8 dBm, PDISS =26 W, ID_Drive = 1.61 A
Channel Temperature (TCH) (under RF drive)
145
Median Lifetime (TM)
Notes:
3.1E+10
Hrs
1. Thermal resistance measured to back of package.
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET13
25
50
75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (C)
PDISS vs. Frequency vs. TBASE
PW = 100 µs, DC = 10%,
PIN = 15 dBm
PDISS vs. Frequency vs. TBASE
30
28
26
24
22
20
18
30
28
26
24
22
20
18
CW, PIN = 15 dBm
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
9.5
10.0
10.5
Frequency (GHz)
11.0
11.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 3 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Output Power vs. Frequency vs. VD
Output Power vs. Frequency vs. Temp.
44
44
43
42
41
40
39
38
43
42
25 V
-40 °C
25 °C
85 °C
28 V
41
30 V
32 V
40
39
PW = 100 µs, DC = 10%,
PIN = 15 dBm, Temp = 25 °C
PW = 100 µs, DC = 10%,
PIN = 15 dBm
38
9.5
10.0
10.5
11.0
11.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Frequency (GHz)
Output Power vs. Input Power vs. Temp.
Output Power vs. Freq. vs. Input Power
44
43
42
41
40
39
38
44
43
42
41
40
39
38
-40 °C
25 °C
85 °C
10 dBm
14 dBm
15 dBm
16 dBm
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
PW = 100 µs, DC = 10 %,
Temp = 25 °C
9.5
10.0
10.5
11.0
11.5
10
12
14
16
Frequency (GHz)
PIN (dBm)
Output Power vs. Input Power vs. IDQ
Output Power vs. Freq. vs. Drain Current
44
43
42
41
40
39
38
44
43
42
41
40
39
38
145 mA
365 mA
145 mA
365 mA
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
9.5
10.0
10.5
11.0
11.5
10
12
14
16
Frequency (GHz)
PIN (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 4 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Power Gain vs. Frequency vs. VD
PAE vs. Frequency vs. VD
30
29
28
27
26
25
24
48
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
46
44
42
40
25 V
38
28 V
25 V
28 V
30 V
32 V
36
30 V
32 V
34
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
32
30
9.5
10.0
10.5
11.0
11.5
9.5
9.5
10
10.0
10.5
Frequency (GHz)
11.0
11.5
11.5
16
Frequency (GHz)
PAE vs. Frequency vs. Temperature
Power Gain vs. Frequency vs. Temperature
48
46
44
42
40
38
36
34
32
30
30
29
28
27
26
25
24
PW = 100 µs, DC = 10 %,
PIN = 15 dBm
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
PW = 100 µs, DC = 10 %,
PIN = 15 dBm
10.0
10.5
11.0
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Frequency (GHz)
PAE vs. Input Power vs. Temperature
Power Gain vs. Input Power vs. Temp.
46
45
44
43
42
41
40
39
38
35
32
29
26
23
20
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
10
12
14
16
12
14
PIN (dBm)
PIN (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 5 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Gate Current vs. Frequency vs. VD
Drain Current vs. Frequency vs. VD
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
2.0
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
PW = 100 µs, DC = 10 %,
PIN = 15 dBm, Temp = 25 °C
1.8
1.6
25 V
28 V
30 V
32 V
1.4
25 V
28 V
1.2
1.0
30 V
32 V
9.5
10.0
10.5
11.0
11.5
9.5
10.0
10.5
Frequency (GHz)
11.0
11.5
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
Drain Current vs. Frequency vs. Temp.
PW = 100 µs, DC = 10 %,
PIN = 15 dBm
5.5
2.0
1.8
1.6
1.4
1.2
1.0
PW = 100 µs, DC = 10 %,
PIN = 15 dBm
4.5
3.5
2.5
1.5
0.5
-0.5
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
9.5
10.0
10.5
11.0
11.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Input Power vs. Temp.
Gate Current vs. Input Power vs. Temp.
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
5.5
4.5
3.5
2.5
1.5
0.5
-0.5
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
PW = 100 µs, DC = 10 %,
Freq = 10.5 GHz
-40 °C
25 °C
-40 °C
25 °C
85 °C
85 °C
10
12
14
16
10
12
14
16
PIN (dBm)
PIN (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 6 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Output Power vs. Frequency vs. Temp.
Output Power vs. Frequency vs. VD
44
43
42
41
40
39
38
44
CW, PIN = 15 dBm, Temp = 25 °C
43
42
-40 °C
25 °C
85 °C
41
40
39
38
25 V
28 V
30 V
32 V
CW, PIN = 15 dBm
9.5
10.0
10.5
11.0
11.5
9.5
9.5
9.5
10.0
10.5
Frequency (GHz)
11.0
11.5
Frequency (GHz)
Output Power vs. Input Power vs. Temp.
Output Power vs. Freq. vs. Input Power
44
43
42
41
40
39
38
44
42
40
38
36
34
32
30
-40 °C
25 °C
85 °C
9 dBm
12 dBm
15 dBm
18 dBm
CW, Freq = 10.5 GHz
CW, Temp = 25 °C
10.0
10.5
11.0
11.5
0
2
4
6
8
10
12
14
16
18
Frequency (GHz)
PIN (dBm)
Output Power vs. Input Power vs. IDQ
Output Power vs. Freq. vs. Drain Current
44
43
42
41
40
39
38
44
42
40
38
36
34
32
30
145 mA
365 mA
145 mA
365 mA
CW, Freq = 10.5 GHz
CW, PIN = 15 dBm, Temp = 25 °C
10.0
10.5
11.0
11.5
0
2
4
6
8
10
12
14
16
18
Frequency (GHz)
PIN (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 7 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Power Gain vs. Frequency vs. VD
PAE vs. Frequency vs. VD
30
29
28
27
26
25
24
46
CW, PIN = 15 dBm,
Temp = 25 °C
44
42
40
25 V
38
36
34
28 V
30 V
32 V
25 V
28 V
30 V
32 V
32
CW, PIN = 15 dBm,
Temp = 25 °C
30
9.5
10.0
10.5
Frequency (GHz)
11.0
11.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
PAE vs. Frequency vs. Temperature
Power Gain vs. Frequency vs. Temperature
46
44
42
40
38
36
34
32
30
30
29
28
27
26
25
24
CW, PIN = 15 dBm
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
CW, PIN = 15 dBm
9.5
10.0
10.5
11.0
11.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Frequency (GHz)
Power Gain vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temperature
40
37
34
31
28
25
22
50
45
40
35
30
25
20
15
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
CW, Freq = 10.5 GHz
12 14 16 18
CW, Freq = 10.5 GHz
12 14 16 18
0
2
4
6
8
10
0
2
4
6
8
10
PIN (dBm)
PIN (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 8 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Large Signal
Conditionsunlessotherwise specified:VD=28 V,IDQ=365 mA,VG=-2.6Vtypical.
Gate Current vs. Frequency vs. VD
Drain Current vs. Frequency vs. VD
11.5
9.5
7.5
5.5
3.5
1.5
-0.5
2.0
1.8
1.6
1.4
1.2
1.0
CW, PIN = 15 dBm,
Temp = 25 °C
CW, PIN = 15 dBm,
Temp = 25 °C
25 V
28 V
30 V
32 V
25 V
28 V
30 V
32 V
9.5
10.0
10.5
11.0
11.5
9.5
9.5
0
10.0
10.5
Frequency (GHz)
11.0
11.5
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Gate Current vs. Frequency vs. Temp.
2.0
1.8
1.6
1.4
1.2
1.0
14.5
11.5
8.5
CW, PIN = 15 dBm
CW, PIN = 15 dBm
-40 °C
25 °C
85 °C
5.5
-40 °C
25 °C
85 °C
2.5
-0.5
10.0
10.5
Frequency (GHz)
11.0
11.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Gate Current vs. Input Power vs. Temp.
Drain Current vs. Input Power vs. Temp.
34.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
CW, Freq = 10.5 GHz
29.5
24.5
19.5
14.5
9.5
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
4.5
CW, Freq = 10.5 GHz
-0.5
0
2
4
6
8
10
12
14
16
18
2
4
6
8
10
12
14
16
18
PIN (dBm)
PIN (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 9 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Linearity
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
3rd Harmonic vs. Frequency vs. PIN
CW, VD = 28 V, IDQ = 145 mA, Temp = 25 ꢀC
2nd Harmonic vs. Frequency vs. PIN
CW, VD = 28 V, IDQ = 145 mA, Temp = 25 ꢀC
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-30
-32
-34
-36
-38
-40
15 dBm
5 dBm
-42
5 dBm
15 dBm
-44
10.0
10.2
10.4
10.6
10.8
11.0
10.0
10.2
10.4
10.6
10.8
11.0
Frequency (GHz)
Frequency (GHz)
IM3 vs. Output Power vs. Frequency
CW, Temp = 25 ꢀC
IM5 vs. Output Power vs. Frequency
CW, Temp = 25 ꢀC
-15
-20
-25
-30
-35
-40
-45
-30
-35
-40
-45
-50
-55
-60
-65
-70
10 GHz
10.5 GHz
11 GHz
10 GHz
10.5 GHz
11 GHz
20
25
30
35
40
20
25
30
35
40
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Drain Current
CW, Freq = 10.5 GHz, Temp = 25 ꢀC
IM5 vs. Output Power vs. Drain Current
CW, Freq = 9.5 GHz, Temp = 25 ꢀC
-15
-20
-25
-30
-35
-40
-45
-30
-35
-40
-45
-50
-55
-60
-65
-70
145 mA
365 mA
145 mA
365 mA
20
25
30
35
40
20
25
30
35
40
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 10 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Typical Performance: Small Signal
Conditions unless otherwise specified: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical.
Gain vs. Frequency vs. Temperature
Gain vs. Frequency vs. Drain Current
45
42
39
36
33
30
27
24
21
45
42
39
36
33
-40 °C
25 °C
85 °C
30
365 mA
27
145 mA
24
VD = 28 V, CW
11.0 11.5
VD = 28 V, CW
21
9.5
10.0
10.5
9.5
10.0
10.5
11.0
11.5
Frequency (GHz)
Frequency (GHz)
IRL vs. Frequency vs. Drain Current
Input Return Loss vs. Frequency vs. Temp.
0
-3
0
-3
-6
-6
-9
-9
-40 °C
25 °C
85 °C
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
365 mA
145 mA
VD = 28 V, CW
VD = 28 V, CW
11.0 11.5
9.5
10.0
10.5
11.0
11.5
9.5
10.0
10.5
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
ORL vs. Frequency vs. Drain Current
0
-3
0
-3
VD = 28 V, CW
-6
-6
-9
-9
-12
-15
-18
-21
-24
-27
-30
-12
-15
-18
-21
-24
-27
-30
365 mA
145 mA
-40 °C
25 °C
85 °C
VD = 28 V, CW
11.0 11.5
9.5
10.0
10.5
11.0
11.5
9.5
10.0
10.5
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 11 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Applications Information and Pin Layout
C7
0.01uF
C1
0.1uF
C5
10-47uF
R5
10 Ohms
R1
10 Ohms
1
10
9
2
Vd
RF IN 3
8 RF OUT
7
6
4
5
R2
10 Ohms
R6
10 Ohms
C6
10-47uF
C8
0.01uF
C2
0.1uF
Bias-down Procedure
Bias-up Procedure
1. Turn off RF supply
1. Set ID limit to 3 A, IG limit to 14 mA
2. Apply −5 V to VG
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
3. Apply +28 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 365 mA (VG ~ −2.6 V Typ.).
5. Turn on RF supply
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pin No.
Symbol
Description
Gate Voltage; Bias network is required; must be biased
from both sides; see recommended Application Information
above.
1,5
VG
3
RFIN
Output; matched to 50 Ω; DC blocked
2,4,7,9
GND
Must be grounded on the PCB.
Drain voltage; Bias network is required; must be biased
from both sides; see recommended Application Information
above.
6,10
8
VD
RFOUT
Input; matched to 50 Ω; DC blocked
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 12 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Evaluation Board
Vg
VD
GND
GND
P1
C11
C5
C5
R3
R7
CP-06 EVB
R3
RF IN
RF OUT
C9
C3
C1
C1
R1
C7
C7
R1
R5
R5
R2
C2
R6
R6
C8
R2
C2
C8
C10
C4
R4
1119607
REV A
R8
R4
C6
C12
C6
P2
GND
GND
Vg
VD
NOTE: Both Top and Bottom Vd and Vg must be biased.
Bill of Material
Reference Des.
C1, C2
Value
0.1 μF
Description
Manuf. Part Number
Cap, 0402, 50 V, 10%, X7R
Cap, 1206, 50 V, 20%, X5R (10v is OK)
Cap, 0402, 50V, 10%, X7R
Res, 0402, 50V, 5%
Res, 0402, jumper required for the
above EVB design
Various
Various
Various
Various
Various
C5, C6
10-47 μF
0.01 μF
10 Ohms
C7, C8
R1, R2, R5, R6
R3, R4
0 Ohms
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 13 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGA2625-CP to the board.
3. To improve the thermal and RF performance, we recommend the following:
a. Apply thermal compound or 4 mils indium shim between the package and the board.
b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim
between the heat sink and the board.
4. Apply solder to each pin of the TGA2625-CP.
5. Clean the assembly with alcohol.
Mechanical Information
10
9
1
2
3
4
5
8
7
6
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2625: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 14 of 15 -
© 2014 TriQuint
www.triquint.com
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with the latest version of J-STD-020, Lead-
free solder, 260°C
Caution! ESD-Sensitive Device
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: TBD
Value:
Test:
TBD
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
Level 5A at 260 °C convection reflow.
The part is rated Moisture Sensitivity Level 5A at 260 °C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce: 3A001.b.2.b
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Preliminary Datasheet: 11-03-14
Disclaimer: Subject to change without notice
- 15 of 15 -
© 2014 TriQuint
www.triquint.com
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