TGF2957 [TRIQUINT]
70 Watt Discrete Power GaN on SiC HEMT;
| 型号： | TGF2957 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 70 Watt Discrete Power GaN on SiC HEMT |
| 文件： | 总19页 (文件大小：1434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Applications
• Defense & Aerospace
• Broadband Wireless
Product Features
Functional Block Diagram
• Frequency Range: DC - 12 GHz
• 48.6 dBm Nominal PSAT at 3 GHz
• 69.6% Maximum PAE at 3 GHz
• 19.2 dB Nominal Power Gain at 3 GHz
• Bias: VD = 32 V, IDQ = 250 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 3.66 x 0.10 mm
General Description
Pad Configuration
The TriQuint TGF2957 is a discrete 12.6 mm GaN on
SiC HEMT which operates from DC-12 GHz. The
TGF2957 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad No.
1-10
Symbol
VG / RF IN
11-15
VD / RF OUT
Source / Ground
Backside
The TGF2957 typically provides 48.6 dBm of saturated
output power with power gain of 19.2 dB at 3 GHz. The
maximum power added efficiency is 69.6 % which makes
the TGF2957 appropriate for high efficiency applications.
Ordering Information
Part ECCN
TGF2957
Lead-free and RoHS compliant.
Description
3A001b.3.b 70 Watt GaN HEMT
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 1 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain to Gate Voltage (VDG
Value
100 V
Parameter
Drain Voltage Range (VD)
Value
32 V
)
Drain Voltage (VD)
40 V
Drain Quiescent Current (IDQ
)
250 mA
Gate Voltage Range (VG)
Drain Current (ID)
-10 to 0 V
7.5 A
Drain Current Under RF Drive ( ID)(1)
4.2 A (Typ.)
−3.5 V (Typ.)
225°C (Max.)
Pinch-off Gate Voltage (VG)
Gate Current (IG)
-12.6 to 21mA
68 W
Channel Temperature (TCH
)
Power Dissipation (PD)
(1) 10% pulses at 3GHz, Power Tuned
CW Input Power (PIN) @ 10GHz
Channel Temperature (TCH
44.3 dBm
275°C
)
Mounting Temperature (30 Sec.)
Storage Temperature
320°C
−65 to 150°C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 2 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
RF Characterization – Model Optimum Power Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes.
Parameter
Frequency (F)
Typical Value
6
Units
GHz
V
1
3
10
15
32
Drain Voltage (VD)
32
32
32
32
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
Gain @ P3dB (G3dB
)
250
48.5
64.7
26.6
250
48.6
63.7
19.2
250
48.5
58.9
14.2
250
48.6
52.8
10.5
250
48.2
44.9
7.5
mA
)
dBm
%
)
)
dB
Parallel Output Resistance (1)
(Rp)
95.0
95.6
86.8
70.8
41.7
Ω∙mm
Parallel Output Capacitance (1)
(Cp)
-0.038
0.142
0.209
0.218
0.234
pF/mm
Load Impedance (ZL)
Source Impedance (ZS)
Notes:
7.53-j0.17
1.05+j7.47
7.12+j1.82
0.39+j2.44
4.69+j3.21
0.45+j1.03
2.90+j2.81
0.38+j0.23
1.79+j1.65
0.39-j0.31
Ω
Ω
1. Large signal equivalent output network (normalized).
RF Characterization – Model Optimum Efficiency Tune
Simulation conditions unless otherwise noted: T = 25°C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes.
Typical Value
6
Units
GHz
V
Parameter
Frequency (F)
1
3
10
15
32
Drain Voltage (VD)
32
32
32
32
Bias Current (IDQ
Output P3dB (P3dB
PAE @ P3dB (PAE3dB
Gain @ P3dB (G3dB
)
250
47.1
71.2
27.7
250
47.2
69.6
20.8
250
47.2
64.8
15.1
250
47.8
55.4
10.9
250
48.0
45.9
7.8
mA
)
dBm
%
)
)
dB
Parallel Output Resistance (1)
(Rp)
170.9
0.288
158.0
0.283
141.8
0.288
93.8
46.0
Ω∙mm
Parallel Output Capacitance (1)
(Cp)
0.271
0.251
pF/mm
Load Impedance (ZL)
Source Impedance (ZS)
Notes:
12.4+j3.83
1.05+j7.47
7.33+j6.18
0.39+j2.44
3.40+j5.14
0.45+j1.03
2.10+j3.35
0.38+j0.23
1.67+j1.82
0.39-j0.31
Ω
Ω
1. Large signal equivalent output network (normalized).
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 3 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Thermal and Reliability Information - Pulsed (1)
Parameter
Test Conditions
Value
1.53
Units
ºC/W
°C
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
PD = 50.4 W, Tbaseplate = 85°C
Pulse: 100uS, 5%
162
6.71E08
1.63
Hrs
°C/W
°C
PD = 50.4 W, Tbaseplate = 85°C
Pulse: 100uS, 10%
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Notes:
167
3.94E08
1.81
Hrs
ºC/W
°C
PD = 50.4 W, Tbaseplate = 85°C
Pulse: 100uS, 20%
176
1.53E08
2.36
Hrs
ºC/W
°C
PD = 50.4 W, Tbaseplate = 85°C
Pulse: 100uS, 50%
204
1.09E07
Hrs
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Thermal and Reliability Information - CW (1)
Parameter
Test Conditions
Value
2.78
Units
ºC/W
°C
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
PD = 12.6 W, Tbaseplate = 85°C
CW
120
9.51E10
2.98
Hrs
°C/W
°C
PD = 25.2 W, Tbaseplate = 85°C
CW
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Thermal Resistance, θJC
Channel Temperature, TCH
Median Lifetime, TM
Notes:
160
8.30E08
3.23
Hrs
ºC/W
°C
PD = 37.8 W, Tbaseplate = 85°C
CW
207
8.44E06
3.49
Hrs
ºC/W
°C
PD = 50.4 W, Tbaseplate = 85°C
CW
261
1.18E05
Hrs
1. Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10 mil CuMo Carrier Plate.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 4 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Median LifeTime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25
50
75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 5 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Maximum Channel Temperature - Pulsed
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 6 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Maximum Channel Temperature - CW
Peak Temperature vs. Pdiss (W) for Fixed 85°C on CuMo Carrier Plate
340
320
300
280
260
240
220
200
180
160
140
120
100
80
Carrier Plate held at 85C
Recommended Operating Limit
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
55.0
60.0
65.0
70.0
CW Power Dissipation, W
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 7 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Maximum Gain Performance
See page 17 for reference planes.
Maximum Gain vs. Frequency
35
30
25
20
15
10
5
Vd = 12V, Idq = 250mA
Vd = 12V, Idq = 630mA
Vd = 32V, Idq = 250mA
Vd = 32V, Idq = 630mA
0
0
5
10
15
20
25
30
Frequency [GHz]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 8 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 250mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
1GHz, Load-pull
Max Power is 48.5dBm
at Z = 7.531-0.167i
•
Ω
Zs(fo) = 1.05+7.47i
Zs(2fo) = 6.9
= 0.0296-0.0111i
Max Gain is 33.9dB
•
Ω
Γ
Ω
Zs(3fo) = 6.9
Ω
Zl(2fo) = 7.1
at Z = 3.585+6.645i
= 0.0417+0.596i
Ω
33.6
Ω
Γ
Zl(3fo) = 7.1
Max PAE is 71.2%
•
Ω
33.1
32.6
at Z = 12.404+3.831i
= 0.299+0.1377i
Ω
Γ
67.7
62.7
57.7
48.5
48.3
48.1
Power
Gain
PAE
Zo = 7.1
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 9 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 250mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
3GHz, Load-pull
Max Power is 48.6dBm
Ω
•
at Z = 7.121+1.818i
Zs(fo) = 0.39+2.44i
Zs(2fo) = 2.7
= 0.0176+0.1256i
Max Gain is 24.8dB
•
Ω
Γ
Ω
Zs(3fo) = 2.7
Ω
Zl(2fo) = 7.1
at Z = 2.075+5.733i
Ω
= -0.1131+0.6955i
Max PAE is 69.6%
Ω
Γ
•
Zl(3fo) = 7.1
Ω
at Z = 7.326+6.18i
= 0.1683+0.3563i
Ω
Γ
24.4
23.9
23.4
65.6
60.6
55.6
48.6
48.4
48.2
Power
Gain
PAE
Zo = 7.1
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 10 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 250mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
6GHz, Load-pull
Max Power is 48.5dBm
at Z = 4.692+3.208i
•
Ω
Zs(fo) = 0.45+1.03i
Zs(2fo) = 1.1
Zs(3fo) = 1.1
= -0.1136+0.3056i
Max Gain is 15.5dB
Ω
Γ
•
Ω
at Z = 1.842+5.257i
Ω
Ω
Zl(2fo) = 7
Ω
Zl(3fo) = 7
= -0.1699+0.6956i
Max PAE is 64.8%
Γ
•
Ω
at Z = 3.402+5.144i
= -0.0814+0.5347i
Ω
Γ
15.2
14.7
14.2
62.4
57.4
52.4
48.3
48.1
47.9
Power
Gain
PAE
Zo = 7
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 11 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 250mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
10GHz, Load-pull
1
Max Power is 48.6dBm
at Z = 2.902+2.812i
•
Ω
Zs(fo) = 0.38+0.23i
Zs(2fo) = 0.5
= 0.0834+0.4025i
Max Gain is 11.2dB
•
Ω
Γ
Ω
Zs(3fo) = 0.5
Ω
Zl(2fo) = 3.5
at Z = 1.605+4.22i
Ω
= 0.1854+0.6734i
Max PAE is 55.4%
Ω
Γ
•
Zl(3fo) = 3.5
Ω
at Z = 2.103+3.351i
= 0.0799+0.5503i
Ω
Γ
10.8
10.3
51.1
9.8
46.1
41.1
48.6
48.4
48.2
Power
Gain
PAE
Zo = 3.5
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 12 of 19 -
© 2014 TriQuint
www.triquint.com
1
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 250mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
15GHz, Load-pull
1
Max Power is 48.2dBm
•
.
at Z = 1.79+1.647i
Ω
2
Zs(fo) = 0.39-0.31i
= -0.0157+0.3899i
Max Gain is 9.4dB
Ω
Γ
•
.
4
Zs(2fo) = 0.5
Zs(3fo) = 0.5
Zl(2fo) = 2.5
Ω
at Z = 0.717+2.917i
Ω
Ω
= 0.1472+0.7735i
Max PAE is 45.9%
Ω
Ω
Γ
Zl(3fo) = 2.5
•
at Z = 1.673+1.82i
= -0.0067+0.4392i
Ω
Γ
9.17
8.67
8.17
40.6
35.6
30.6
48.2
48
47.8
Power
Gain
PAE
Zo = 2.5
Ω
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 13 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Power Tuned Data
Bond wires not included. See page 17 for reference planes.
TGF2957 Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =250mA, 100uS, 10%, Power Tuned
TGF2957 Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =250mA, 100uS, 10%, Power Tuned
28
27
26
25
24
23
22
21
20
19
18
65
60
55
50
45
40
35
30
25
20
15
35
34
33
32
31
30
29
28
27
26
25
70
Gain
PAE
64
58
52
46
40
34
28
22
16
10
Zs = 1.05+j7.47
Zl = 7.53-j0.17
Ω
Zs = 0.39+j2.44
Zl = 7.12+j1.82
Ω
Ω
Ω
Gain
PAE
36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power [dBm]
35 36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power [dBm]
TGF2957 Gain and PAE vs. Output Power
10GHz, Vds =32V, Idq =250mA, 100uS, 10%, Power Tuned
TGF2957 Gain and PAE vs. Output Power
6GHz, Vds =32V, Idq =250mA, 100uS, 10%, Power Tuned
19
60
55
50
45
40
35
30
25
20
15
10
23
60
55
50
45
40
35
30
25
20
15
10
18
17
16
15
14
13
12
11
10
9
22
21
20
19
18
17
16
15
14
13
Zs = 0.38+j0.23
Zl = 2.90+j2.81
Ω
Zs = 0.45+j1.03
Zl = 4.69+j3.21
Ω
Ω
Ω
Gain
PAE
Gain
PAE
36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power [dBm]
36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power [dBm]
TGF2957 Gain and PAE vs. Output Power
15GHz, Vds =32V, Idq =250mA, 100uS, 10%, Power Tuned
15
14
13
12
11
10
9
50
46
42
38
34
30
26
22
18
14
10
Zs = 0.39-j0.31
Ω
Zl = 1.79+j1.65
Ω
8
Gain
PAE
7
6
5
36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power [dBm]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 14 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model Efficiency Tuned Data
Bond wires not included. See page 17 for reference planes.
TGF2957 Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =250mA, 100uS, 10%, Efficiency Tuned
TGF2957 Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =250mA, 100uS, 10%, Efficiency Tuned
30
29
28
27
26
25
24
23
22
21
20
80
72
64
56
48
40
32
24
16
8
36
35
34
33
32
31
30
29
28
27
26
80
74
68
62
56
50
44
38
32
26
20
Gain
PAE
Zs = 1.05+j7.47
Ω
Zl = 12.4+j3.83
Ω
Zs = 0.39+j2.44
Ω
Zl = 7.33+j6.18
Ω
Gain
PAE
0
35 36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power [dBm]
36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power [dBm]
TGF2957 Gain and PAE vs. Output Power
10GHz, Vds =32V, Idq =250mA, 100uS, 10%, Efficiency Tuned
TGF2957 Gain and PAE vs. Output Power
6GHz, Vds =32V, Idq =250mA, 100uS, 10%, Efficiency Tuned
19
60
55
50
45
40
35
30
25
20
15
10
23
70
64
58
52
46
40
34
28
22
16
10
18
17
16
15
14
13
12
11
10
9
22
21
20
19
18
17
16
15
14
13
Zs = 0.38+j0.23
Ω
Zl = 2.10+j3.35
Ω
Zs = 0.45+j1.03
Ω
Zl = 3.40+j5.14
Ω
Gain
PAE
Gain
PAE
35 36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power [dBm]
35 36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power [dBm]
TGF2957 Gain and PAE vs. Output Power
15GHz, Vds =32V, Idq =250mA, 100uS, 10%, Efficiency Tuned
15
14
13
12
11
10
9
60
55
50
45
40
35
30
25
20
15
10
Zs = 0.39-j0.31
Ω
Zl = 1.67+j1.82
Ω
8
Gain
PAE
7
6
5
36 37 38 39 40 41 42 43 44 45 46 47 48 49
Output Power [dBm]
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 15 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Mechanical Drawing
Bond Pads
Pad No.
Description Dimensions
1, 2, 3, 4, 5, 6,
7, 8, 9, 10
11, 12, 13, 14,
15
Gate
0.125 x 0.125
0.150 x 0.546
1.007 x 3.660
Drain
Die Backside
Source / Ground
1. Units: millimeters
2. Thickness: 0.100 mm
3. Die xy size tolerance: 0.050 mm
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 16 of 19 -
© 2014 TriQuint
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TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Reference Planes
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 17 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Model
A model is available for download from Modelithics (at http://www.modelithics.com/mvp/Triquint&tab=3) by approved
TriQuint customers. The model is compatible with the industry’s most popular design software including Agilent ADS
and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free
license before being granted the download.
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) not recommended.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.
• Force, time, and ultrasonics are critical bonding parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Disclaimer
GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
Bias-up Procedure
Bias-down Procedure
1. VG set to -5 V.
2. VD set to 32 V.
3. Adjust VG more positive until quiescent ID is 250
mA.
4. Apply RF signal.
1. Turn off RF signal.
2. Turn off VD and wait 1 second to allow drain
capacitor dissipation.
3. Turn off VG.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 18 of 19 -
© 2014 TriQuint
www.triquint.com
TGF2957
70 Watt Discrete Power GaN on SiC HEMT
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with gold/tin (320°C maximum reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: TBD
Value:
Test:
TBD
TBD
Standard: TBD
This product also has the following attributes:
•
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such
information is entirely with the user. All information contained herein is subject to change without notice. Customers
should obtain and verify the latest relevant information before placing orders for TriQuint products. The information
contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights,
licenses, or any other intellectual property rights, whether with regard to such information itself or anything described
by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev A 10-20-14
Disclaimer: Subject to change without notice
- 19 of 19 -
© 2014 TriQuint
www.triquint.com
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