TGF2960-SD [TRIQUINT]
0.5 Watt DC-5 GHz Packaged HFET; 0.5瓦特的DC- 5GHz的包装HFET
| 型号： | TGF2960-SD |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 0.5 Watt DC-5 GHz Packaged HFET |
| 文件： | 总21页 (文件大小：1058K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGF2960-SD
0.5 Watt DC-5 GHz Packaged HFET
Key Features
•
Frequency Range: DC-5 GHz
Nominal 900 MHz Application Board Performance:
•
•
TOI: 40 dBm
28 dBm Psat, 27 dBm P1dB
•
Gain: 19 dB
Input Return Loss: -10 dB
•
•
•
Output Return Loss: -5 dB
Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V
(Typical)
•
Package Dimensions: 4.5 x 4 x 1.5 mm
900 MHz Application Board
Performance
Primary Applications
•
•
•
Cellular Base Stations
WiMAX
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
Wireless Infrastructure
•
•
IF & LO Buffer Applications
RFID
Product Description
The TGF2960-SD is a high performance 1/2-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 100 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 19 dB of gain, 28 dBm of
saturated output power, and 40 dBm of output IP3.
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant.
Datasheet subject to change without notice.
1
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May 2012 © Rev B
TGF2960-SD
Table I
Absolute Maximum Ratings 1/
Symbol
Parameter
Value
Notes
Vd-Vg
Vd
Drain to Gate Voltage
17 V
9 V
Drain Voltage
2/
Vg
Gate Voltage Range
Drain Current
-5 to 0 V
390 mA
Id
2/
2/
Ig
Gate Current Range
Input Continuous Wave Power
-2.4 to 17.8 mA
26 dBm
Pin
1/
2/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Table II
Recommended Operating Conditions
Symbol
Parameter 1/
Typical Value
Vd
Idq
Id
Drain Voltage
Drain Current
8 V
100 mA
130 mA
-1.0 V
Drain Current at Psat
Gate Voltage
Vg
1/
See assembly diagram for bias instructions.
2
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TGF2960-SD
Table III
Electrical Performance
Test conditions unless otherwise specified: fin = 900 MHz, 25°C; Vd = 8V, Idq = 100
mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation
SYMBOL
PARAMETER
MIn
Nom
UNIT
Gain
Small Signal Gain
18
19
dB
P1dB
OTOI
Output Power @ 1dB Compression
3rd Order Output Intercept Point 1/
25.5
37
27
40
dBm
dBm
1/ 900 and 910 MHz, 16 dBm output power per tone
3
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May 2012 © Rev B
TGF2960-SD
Table IIIa
RF Characterization Table
Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V, typical
SYMBOL
PARAMETER
TEST CONDITIONS
NOMINAL UNITS NOTES
Gain
Small Signal Gain
Input Return Loss
Output Return Loss
900 MHz
1900 MHz
2100 MHz
19
16
15
dB
1/
2/
3/
IRL
ORL
Psat
P1dB
TOI
900 MHz
1900 MHz
2100 MHz
-10
-10
-10
dB
1/
2/
3/
900 MHz
1900 MHz
2100 MHz
-5
-6
-6
dB
1/
2/
3/
Saturated Output
Power
900 MHz
1900 MHz
2100 MHz
28
28
28
dBm
dBm
dBm
dB
1/
2/
3/
Output Power @ 1dB
Compression
900 MHz
1900 MHz
2100 MHz
27
27
27
1/
2/
3/
Output TOI
900 MHz
1900 MHz
2100 MHz
40
39
39
1/
4/
5/
NF
Noise Figure
900 MHz
1900 MHz
2100 MHz
3.7
4.3
4.3
1/
2/
3/
1/
2/
3/
4/
5/
Using 900 MHz Application Board
Using 1900 MHz Application Board tuned for maximum output power
Using 2100 MHz Application Board tuned for maximum output power
Using 1900 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB)
Using 2100 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB)
4
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TGF2960-SD
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 70°C
Pd = 1.37 W
Tchannel = 175°C
Tm = 8.77E+06 Hrs
Thermal Resistance, θjc
Vd = 8 V
θjc = 77 (°C/W)
Tchannel = 146.5°C
Tm = 2.06E+08 Hrs
Id = 100 mA
Pd = 0.8 W
Tbaseplate = 85°C
Thermal Resistance, θjc
Vd = 8 V
θjc = 77 (°C/W)
Tchannel = 126°C
Tm = 2.48E+09 Hrs
at Psat
Id =130 mA
Pout = 27 dBm
Pd = 0.54 W
Tbaseplate = 85°C
Mounting Temperature
Storage Temperature
See ‘Typical Solder Reflow Profiles’ Table
-65 to 150°C
5
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TGF2960-SD
Gmax, Max Stable Gain, K factor
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
6
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May 2012 © Rev B
TGF2960-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
7
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May 2012 © Rev B
TGF2960-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
8
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May 2012 © Rev B
TGF2960-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
9
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May 2012 © Rev B
TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
10
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May 2012 © Rev B
TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
11
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May 2012 © Rev B
TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
(Tuned for Max IP3, P1dB reduced by 1 dB)
(Tuned for Max Pout)
12
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May 2012 © Rev B
TGF2960-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
13
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May 2012 © Rev B
TGF2960-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
14
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May 2012 © Rev B
TGF2960-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
(Tuned for Max IP3, P1dB reduced by 1 dB)
(Tuned for Max Pout)
15
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May 2012 © Rev B
TGF2960-SD
Electrical Schematic
2
1
2
3
Pin
1
Signal
RF In (Gate)
Gnd (Source)
RF Out (Drain)
2
3
Bias Procedures
Bias-up Procedure
Vg set to -2.5 V
Vd set to +8 V
Adjust Vg more positive until Idq is 100 mA. This will be ~ Vg = -1.0 V
Apply RF signal to input
Bias-down Procedure
Turn off RF signal at input
Reduce Vg to -2.5V. Ensure Id ~ 0 mA
Turn Vd to 0 V
Turn Vg to 0 V
16
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TGF2960-SD
Mechanical Drawing
Units: Millimeters
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
17
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TGF2960-SD
Evaluation Board
Gnd
Vg
Q1
Vd
L2 R1
L3
C5
C6
C8
C10
C7
C2
C9
RF IN
RF OUT
C4
L4
(900 MHz Only)
D /
D /
λ
λ
(900 MHz)
(1900 & 2100 MHz)
R2
C1
C3 L1
Evaluation Board Schematic
Vg
Vd
C10
C1
C5 C7 C9
C8
C6
C3
R1
L2
R2
L3
D /
C4
RF OUT
Z0 = 50
RF IN
L4
Q1 (900
MHz
λ
Ω
C2
Z0 = 50
Ω
Only)
L1
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
18
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TGF2960-SD
Evaluation Board Bill of Materials
Value for Freq (MHz)
Ref Des
Description
900
4.7 nH
22 pF
1900
1.2 nH
1.2 pF
2100
1.5 nH
1.2 pF
0.6 pF
5.8 mm
L1
C1
C2
D
0603 ACCU-L AVX Inductor
0603 ACCU-P AVX Capacitor
0603 ACCU-P AVX Capacitor
Physical Location for C2
0.7 pF
18.8 mm
0.6 pF
14.2 mm
Physical Location for C2 for maximum
power
D
λ
18.8 mm
14.2 mm
5.8 mm
36o@0.9
GHz
58o@1.9
GHz
26o@2.1
GHz
50 Ohm Transmission Line Length D
for maximum power
Physical Location for C2 for maximum
TOI
D
λ
18.8 mm
17.2 mm
9.6 mm
36o@0.9
GHz
70o@1.9
GHz
39o@2.1
GHz
50 Ohm Transmission Line Length D
for maximum TOI
L2, L3
L4
50 nH
--
0805 Inductor
0603 ACCU-L AVX Inductor
0603 Capacitor
1.2 nH
--
C3,C4
C5, C6
C7, C8
C9, C10
R1
150 pF
0.1 μF
0.01 μF
1000 pF
50 Ohms
0603 Capacitor
0603 Capacitor
0603 Capacitor
0805 1/8 Watt Resistor
R2
Q1
11 Ohms
3 Ohms
--
5.1 Ohms
0805 1/8 Watt Resistor
TriQuint TGF2960-SD Packaged FET
(PCB)
--
28 mil thick GETEK
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
19
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May 2012 © Rev B
TGF2960-SD
Recommended Assembly Diagram
2.6 mm Ø CLEARANCE HOLE
FOR 2-56 SOCKET HEAD CAP SCREW (2/)
7.6 X 7.6 mm COPPER AREA (3/)
ARRAY OF VIAS (1/)
4.6 mm Ø SOLDERMASK
SOT-89 PACKAGE OUTLINE
KEEPOUT FOR 2-56 LOCKWASHER (4/)
1
2
3
Assembly Notes
1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array
of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter
vias on 0.60 mm center to center spacing is recommended.
2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader
located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 2-
56 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent
compression damage to the PC board.
3/ Use of 1 oz copper (min) in the PC board construction is recommended.
4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board
contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the
2-56 screw and b) front of the PC board around package pin 2.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
20
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May 2012 © Rev B
TGF2960-SD
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
SnPb
Pb Free
Ramp-up Rate
3 °C/sec
3 °C/sec
Activation Time and
Temperature
60 – 120 sec @ 140 – 160 °C
60 – 150 sec
60 – 180 sec @ 150 – 200 °C
60 – 150 sec
Time above Melting Point
Max Peak Temperature
240 °C
260 °C
Time within 5 °C of Peak
10 – 20 sec
10 – 20 sec
Temperature
Ramp-down Rate
4 – 6 °C/sec
4 – 6 °C/sec
Ordering Information
Part
Package Style
SOT-89, TAPE AND REEL
TGF2960-SD, TAPE AND REEL
21
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May 2012 © Rev B
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