B772O(TO-252-2) [TRSYS]
Transistor;
| 型号： | B772O(TO-252-2) |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-251 Plastic-Encapsulated Transistors
6. 50¡ À0. 10
5. 30¡ À0. 05
2. 30¡ À0. 05
0. 51¡ À0. 03
TO-251
TO-252-2
B772 TRANSISTOR (PNP)
5¡
ã
5¡ ã
0. 80¡ À0. 05
FEATURES
0. 60¡ À0. 05
1. BASE
2. 30¡ À0
1. 20
0. 51¡ À0. 03
Power dissipation
PCM:
1 2 3
2. COLLECTOR
3. EMITTER
6. 50¡ À0. 15
2. 30¡ À0. 10
5. 30¡ À0. 10
1.25
-3
W(Tamb=25℃)
0. 51¡ À0. 05
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
Collector current
ICM:
5¡
ã
5¡
ã
A
V
0. 80¡ À0. 10
0. 60¡ À0. 10
0
2. 30¡ À0. 10
0¡
ã
9«¡
¡
ã
Collector-base voltage
V(BR)CBO - 40
0. 51
1 2 3
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -100µA, IE=0
Ic= -10mA, IB=0
IE= -100µA, IC=0
VCB= -40V, IE=0
MIN
-40
-30
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
-1
-10
-1
µA
µA
µA
ICEO
VCE= -30V, IB=0
Collector cut-off current
IEBO
VEB= -6V, IC=0
Emitter cut-off current
hFE(1)
VCE= -2V, IC= -1A
VCE= -2V, IC= -100mA
IC= -2A, IB= -0.2 A
IC= -2A, IB= -0.2 A
60
32
400
DC current gain
hFE(2)
VCE (sat)
VBE(sat)
-0.5
-1.5
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE= -5V, Ic=-0.1A
fT
50
MHz
Transition frequency
f =10MHz
CLASSIFICATION OF hFE (1)
Rank
R
O
Y
GR
200-400
60-120
100-200
160-320
Range
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