FRAF801G [TSC]

Isolation 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers; 隔离8.0安培。玻璃钝化快速恢复整流器
FRAF801G
型号: FRAF801G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Isolation 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers
隔离8.0安培。玻璃钝化快速恢复整流器

二极管
文件: 总2页 (文件大小:82K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FRAF801G THRU FRAF807G  
Isolation 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
8.0 Amperes  
ITO-220AC  
Features  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
Mechanical Data  
Cases: ITO-220AC molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Leads solderable per  
MIL-STD-202, Method 208 guaranteed  
Polarity: As marked  
High temperature soldering guaranteed:  
260/10 seconds 0.25”,(6.35mm) from case.  
Mounting position: Any  
Weight: 2.24 grams  
Mounting torque: 5 in – 1bs. max.  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
FRAF FRAF FRAF FRAF FRAF FRAF FRAF  
801G 802G 803G 804G 805G 806G 807G  
Symbol  
Type Number  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
Maximum Average Forward Rectified Current  
@TC = 55  
8.0  
A
I(AV)  
IFSM  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
150  
1.3  
5.0  
100  
A
V
uA  
uA  
nS  
pF  
Maximum Instantaneous Forward Voltage @ 8.0A  
VF  
IR  
Maximum DC Reverse Current @ TC=25℃  
at Rated DC Blocking Voltage @ TC=125℃  
Maximum Reverse Recovery Time ( Note 2 )  
Trr  
Cj  
150  
250  
500  
Typical Junction Capacitance ( Note 1 ) TJ=25℃  
60  
Typical Thermal Resistance (Note 3)  
/W  
5.0  
RθJC  
TJ ,TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes:1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate  
- 454 -  
RATINGS AND CHARACTERISTIC CURVES (FRAF801G THRU FRAF807G)  
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50W  
NONINDUCTIVE  
10W  
NONINDUCTIVE  
trr  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
1W  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
FIG.2- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.5- TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
400  
10  
200  
100  
8
6
4
2
0
40  
20  
10  
Tj=25oC  
Pulse Width=300  
1% Duty Cycle  
s
4
2
0
50  
100  
150  
CASE TEMPERATURE. (oC)  
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
0.4  
0.2  
150  
125  
TJ=1250C  
0.1  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
100  
75  
INSTANTANEOUS FORWARD VOLTAGE. (V)  
8.3ms Single Half Sine Wave  
JEDEC Method  
FIG.6- TYPICAL REVERSE CHARACTERISTICS  
50  
25  
100  
0
40  
1
2
5
10  
20  
50  
100  
Tj=1250C  
NUMBER OF CYCLES AT 60Hz  
10  
FIG.4- TYPICAL JUNCTION CAPACITANCE  
120  
100  
80  
Tj=750C  
4
2
1
60  
0.4  
40  
20  
0
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
Tj=250C  
0.2  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
0.1  
0.5  
1
5
10  
50  
100  
500 1000  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
REVERSE VOLTAGE. (V)  
- 455 -  

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