HER1006G [TSC]

10.0 AMPS. Glass Passivated High Efficient Rectifiers; 10.0安培。玻璃钝化高效整流二极管
HER1006G
型号: HER1006G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

10.0 AMPS. Glass Passivated High Efficient Rectifiers
10.0安培。玻璃钝化高效整流二极管

整流二极管 高效整流二极管 功效 局域网
文件: 总2页 (文件大小:95K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HER1001G THRU HER1008G  
10.0 AMPS. Glass Passivated High Efficient Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
10.0 Amperes  
TO-220  
Features  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
Mechanical Data  
Case: TO-220 molded plastic  
Epoxy: UL 94V-O rate flame retardant  
Terminals: Leads solderable per MIL-STD-  
202, Method 208 guaranteed  
Polarity: As marked  
High temperature soldering guaranteed:  
260oC/10 seconds .16”,(4.06mm) from  
case.  
PIN 1  
PIN 3  
CASE  
PIN 2  
Positive CT  
Weight: 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HER HER HER HER HER HER HER HER  
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G  
Symbol  
Type Number  
Units  
V
Maximum Recurrent Peak Reverse  
Voltage  
50 100 200 300 400 600 800 1000  
VRRM  
Maximum RMS Voltage  
35  
70 140 210 280 420 560 700  
V
V
VRMS  
VDC  
Maximum DC Blocking Voltage  
50 100 200 300 400 600 800 1000  
Maximum Average Forward Rectified  
Current @TC = 100  
10.0  
125  
A
A
I(AV)  
IFSM  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@ 5.0A  
Maximum DC Reverse Current  
@ TA=25at Rated DC Blocking Voltage  
@ TA=125℃  
1.0  
1.3  
10.0  
1.7  
V
VF  
IR  
uA  
uA  
400  
Maximum Reverse Recovery Time  
(Note 1)  
Typical Junction Capacitance ( Note 2 )  
Trr  
50  
60  
80  
40  
nS  
Cj  
RθJC  
pF  
/W  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
1.5  
TJ  
-65 to +150  
TSTG  
-65 to +150  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.  
- 294 -  
RATINGS AND CHARACTERISTIC CURVES (HER1001G THRU HER1008G)  
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
10W  
NONINDUCTIVE  
50W  
NONINDUCTIVE  
trr  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
1W  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
FIG.2- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.3- TYPICAL REVERSE CHARACTERISTICS  
10  
8
1000  
Tj=1250C  
100  
6
4
2
0
10  
0
100  
CASE TEMPERATURE. (oC)  
150  
50  
1
Tj=250C  
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE  
CURRENT  
150  
125  
100  
75  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
8.3ms Single Half Sine Wave  
JEDEC Method  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.6- TYPICAL FORWARD CHARACTERISTICS  
100  
50  
25  
30  
1
2
5
10  
20  
50  
100  
G
5
10  
0
0
NUMBER OF CYCLES AT 60Hz  
1
R
E
H
HER1001G~HER100
3.0  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
HER1006G~HER1008G  
240  
200  
160  
120  
1.0  
0.3  
0.1  
HER1001G  
~HER1005G  
80  
40  
0
H
E
R
1
Tj=250C  
PULSE WIDTH-300  
1% DUTY CYCLE  
0.03  
.01  
0
S
0
6
G
~
H
E
R
1
0
0
8
G
.4  
.6  
.8  
1.0  
1.2 1.4 1.6  
1.8  
1
2
5
10  
20  
50  
100 200  
500  
FORWARD VOLTAGE. (V)  
REVERSE VOLTAGE. (V)  
- 295 -  

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