HERAF1004G [TSC]
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers; 孤立10.0安培。玻璃钝化高效整流二极管
| 型号： | HERAF1004G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HERAF1001G - HERAF1008G
Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.406(10.3)
.390(9.90)
.124(3.16)
.118(3.00)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
Features
.606(15.5)
.583(14.8)
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Glass passivated chip junction.
High efficiency, Low VF
High current capability
.063(1.6)
MAX
High reliability
.161(4.1)
.146(3.7)
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
.110(2.8)
.098(2.5)
.543(13.8)
.512(13.2)
.055(1.4)
.043(1.1)
.071(1.8)
MAX
.030(0.76)
.020(0.50)
.035(0.9)
.020(0.5)
Mechanical Data
2
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Cases: ITO-220AC molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
.100(2.55)
PIN 1
PIN 2
Case Positive
.100(2.55)
CASE
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Dimensions in inches and (millimeters)
High temperature soldering guaranteed:
o
260 C/10 seconds 0.25”,(6.35mm) from case.
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Mounting torque : 5 in – 1bs. max.
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF
Symbol
Type Number
Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
o
I(AV)
10
A
Current @TC =100 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
VF
150
A
V
Maximum Instantaneous Forward Voltage
@10.0A
1.0
1.3
1.7
Maximum DC Reverse Current
o
@TA=25 C at Rated DC Blocking Voltage
IR
10
uA
uA
o
@ TA=125 C
400
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Trr
Cj
50
80
80
60
nS
pF
o
RθJC
TJ
2.0
C/W
o
-65 to +150
-65 to +150
C
o
Storage Temperature Range
TSTG
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
Notes:
Version: A06
RATINGS AND CHARACTERISTIC CURVES (HERAF1001G THRU HERAF1008G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
12
10
Tj=1250C
8
6
100
4
0
10
0
50
100
150
Tj=250C
CASE TEMPERATURE. (oC)
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
120
90
Tj=250C
0.1
0
20
40
60
80
100
120
140
8.3ms Single Half Sine Wave
JEDEC Method
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
60
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
30
0
30
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
F1004G
10
A
ER
HERAF1005G
~H
FIG.4- TYPICAL JUNCTION CAPACITANCE
3.0
1.0
F1001G
A
ER
H
150
120
90
HERAF1006G~HERAF1008G
0.3
0.1
60
0.03
0.01
30
0
1
2
5
10
20
50
100 200
500
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
0
50Vdc
(approx)
(-)
GENERATOR
(NOTE 2)
-0.25A
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: A06
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