MBR10H100CTC0G [TSC]
Dual Common Cathode Schottky Rectifier;
| 型号： | MBR10H100CTC0G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Dual Common Cathode Schottky Rectifier |
| 文件： | 总4页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
TO-220AB
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR
10H100CT
100
MBR
10H150CT
150
MBR
10H200CT
200
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
70
105
140
Maximum DC blocking voltage
100
150
200
Maximum average forward rectified current
IF(AV)
10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
10
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
IRRM
120
A
A
Peak repetitive reverse surge current (Note 1)
1.0
0.5
Maximum instantaneous forward voltage (Note 2)
IF= 5A, TJ=25℃
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
IF= 5A, TJ=125℃
VF
V
IF=10A, TJ=25℃
IF=10A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
IR
5
1
μA
TJ=125 ℃
mA
V/μs
OC/W
OC
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
1.5
dV/dt
RθJC
TJ
Operating junction temperature range
Storage temperature range
- 55 to +175
- 55 to +175
OC
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308059
Version: I13
MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
AEC-Q101
QUALIFIED
GREEN COMPOUND
CODE
PACKING CODE
PACKAGE
PACKING
PART NO.
MBR10HxxxCT
(Note)
Prefix "H"
C0
Suffix "G"
TO-220AB
50 / Tube
Note 1: "xxx" defines voltage from 100V (MBR10H100CT) to 200V (MBR10H200CT)
EXAMPLE
AEC-Q101
GREEN COMPOUND
CODE
PREFERRED P/N
PACKING CODE
DESCRIPTION
PART NO.
QUALIFIED
MBR10H100CT C0
MBR10H100CT C0G
MBR10H100CTHC0
C0
C0
C0
MBR10H100CT
MBR10H100CT
MBR10H100CT
G
Green compound
H
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.1- FORWARD CURRENT DERATING CURVE
12
180
150
120
90
10
8
8.3ms Single Half Sine Wave
JEDEC Method
6
4
60
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
2
30
0
0
1
0
25
50
75
100
125
150
175
10
100
CASE TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
10
1
1000
100
10
TJ=125℃
TJ=75℃
0.1
TJ=125℃
0.01
0.001
TJ=25℃
1
TJ=25℃
0.0001
0
0.1
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Document Number: DS_D1308059
Version: I13
MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
FIG. 5- TYPICAL JUNCTION CAPACITANCE
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
10000
1000
100
100
10
1
f=1.0MHz
Vsig=50mVp-p
0.1
0.01
0.1
1
10
100
0.1
1
10
100
T-PULSE DURATION (sec)
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min Max
Unit (inch)
Min Max
DIM.
A
B
C
D
E
F
G
H
I
-
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
-
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
2.62
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
0.103
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
J
K
L
M
MARKING DIAGRAM
P/N
G
= Specific Device Code
= Green Compound
= Date Code
YWW
F
= Factory Code
Document Number: DS_D1308059
Version: I13
MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308059
Version: I13
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