SFF508G [TSC]

Isolation 5.0 AMPS. Glass Passivated Super Fast Rectifiers; 隔离5.0安培。玻璃钝化超快速整流器
SFF508G
型号: SFF508G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Isolation 5.0 AMPS. Glass Passivated Super Fast Rectifiers
隔离5.0安培。玻璃钝化超快速整流器

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SFF501G THRU SFF508G  
Isolation 5.0 AMPS. Glass Passivated Super Fast Rectifiers  
Voltage Range  
50 to 600 Volts  
Current  
5.0 Amperes  
ITO-220AB  
Features  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
Mechanical Data  
Case: ITO-220AB molded plastic  
Epoxy: UL 94V-O rate flame retardant  
Terminals: Leads solderable per MIL-STD-  
202, Method 208 guaranteed  
Polarity: As marked  
High temperature soldering guaranteed:  
260oC/10 seconds 0.25”,(6.35mm) from  
case.  
PIN 1  
PIN 3  
PIN 2  
Positive CT  
Weight: 2.24 grams  
Mounting torque: 5 in – 1bs. max.  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SFF SFF SFF SFF SFF SFF SFF SFF  
Symbol  
Type Number  
Units  
501G 502G 503G 504G 505G 506G 507G 508G  
50 100 150 200 300 400 500 600  
35 70 105 140 210 280 350 420  
50 100 150 200 300 400 500 600  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
@TC = 100  
I(AV)  
5.0  
70  
A
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@2.5A  
IFSM  
VF  
A
V
0.98  
1.3  
1.7  
Maximum DC Reverse Current  
@ TA=25at Rated DC Blocking Voltage  
@ TA=100℃  
10.0  
400  
uA  
uA  
IR  
Maximum Reverse Recovery Time  
(Note 1)  
Trr  
35  
nS  
Typical Thermal Resistance (Note 3)  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
/W  
pF  
RθJA  
Cj  
5.5  
70  
50  
TJ  
-65 to +150  
-65 to +150  
Storage Temperature Range  
TSTG  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in, Al-Plate.  
- 250 -  
RATINGS AND CHARACTERISTIC CURVES (SFF501G THRU SFF508G)  
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
10W  
NONINDUCTIVE  
50W  
NONINDUCTIVE  
trr  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
1W  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
FIG.2- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.3- TYPICAL REVERSE CHARACTERISTICS  
1000  
10  
8
TJ=1000C  
6
4
2
100  
10  
TJ=750C  
0
0
50  
100  
150  
CASE TEMPERATURE. (oC)  
TJ=250C  
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD SURGE  
CURRENT PER LEG  
70  
TJ=1250C  
60  
50  
40  
30  
0
0.1  
8.3ms Single Half Sine Wave  
JEDEC Method  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.6- TYPICAL FORWARD CHARACTERISTICS  
PER LEG  
100  
30  
1
2
5
10  
20  
50  
100  
NUMBER OF CYCLES AT 60Hz  
10  
SFF501G~SF4G  
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG  
Tj=250C  
SFF505G~SF506G  
3
1
100  
90  
SFF507G~SF508G  
0.3  
0.1  
80  
SFF501G~SFF504G  
70  
60  
S
F
F
5
0
5
G
~
S
F
F
5
Tj=25oC  
0.03  
0.01  
0
Pulse Width=300  
1% Duty Cycle  
s
8
50  
40  
G
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1
2
5
10  
20  
50  
100 200  
500  
1000  
FORWARD VOLTAGE. (V)  
REVERSE VOLTAGE. (V)  
- 251 -  

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