TESDC5V0LCRRG [TSC]
Bi-directional ESD Protection Diode;型号: | TESDC5V0LCRRG |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | Bi-directional ESD Protection Diode 局域网 光电二极管 |
文件: | 总4页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TESDC5V0LC
Taiwan Semiconductor
Small Signal Product
Bi-directional ESD Protection Diode
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns)
- Protects one Bi-directional I/O line
- Working Voltage : 5V
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-323
MECHANICAL DATA
- Case: SOD-323 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 4.85 ± 0.5 mg
- Marking code: AC
APPLICATIONS
- Cell Phone Handsets and Accessories
- Notebooks, Desktops, and Servers
- Keypads, Side Keys, USB 2.0, LCD Displays
- Portable Instrumentation
- Microprocessor Based Equipment
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Peak Pulse Power (tp=8/20μs waveform)
ESD per IEC 61000-4-2 (Air)
VALUE
SYMBOL
UNIT
W
PPP
350
± 15
VESD
KV
oC
ESD per IEC 61000-4-2 (Contact)
± 8
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
PARAMETER
MIN
MAX
5
SYMBOL
VRWM
V(BR)
UNIT
V
Reverse Stand-Off Voltage
-
6
-
IR = 1 mA
VR = 5 V
Reverse Breakdown Voltage
Reverse Leakage Current
-
V
IR
5
μA
I
PP = 1 A
PP = 8 A
-
9.8
18.3
VC
CJ
Clamping Voltage
V
I
-
VR = 0 V , f = 1.0 MHz
Junction Capacitance
1.2
pF
Document Number: DS_S1501014
Version: C15
TESDC5V0LC
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Non-Repetitive Peak Pulse Power VS. Pulse Time
Fig. 2 Pulse Waveform
10
110
100
90
80
70
60
50
40
30
20
10
0
Waveform parameters:
tr = 8 μs , td = 20 μs
1
0.1
e-1
td = Ipp / 2
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
Time (us)
Pulse Duration (μs)
Fig. 3 Admissible Power Dissipation Curve
Fig. 4 Typical Junction Capacitance
120
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
f = 1.0 MHz
0
1
2
3
4
5
0
20
40
60
80
100 120 140 160 180
Ambient Temperature(oC)
Reverse Voltage (V)
Fig. 5 Clamping Voltage VS. Peak Pulse Current
25
20
15
10
5
Waveform parameters:
tr = 8 μs , td = 20 μs
0
0
5
10
15
20
25
30
Peak Pulse Current (A)
Document Number: DS_S1501014
Version: C15
TESDC5V0LC
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
TESDC5V0LC RRG
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
SOD-323
Unit (mm)
Min
Max
Unit (inch)
Min Max
B
DIM.
A
B
C
D
E
F
1.150 1.400 0.045 0.055
2.300 2.700 0.091 0.106
0.250 0.450 0.010 0.018
1.600 1.800 0.063 0.071
0.800 1.000 0.031 0.039
0.050 0.177 0.002 0.007
C
A
D
0.475 REF
0.019 REF
0.004
G
H
-
0.100
-
E
H
F
G
SUGGEST PAD LAYOUT
Unit (mm)
Min
Unit (inch)
Min
DIM.
1.52
0.060
G
X
0.59
0.023
2.70
0.106
X1
Y
0.45
0.018
Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary depending on application.
APPLICATION INFROMATION
- Designed to protect one data, I/O, or power supply line
- Designed to protect sensitive electronics from damage or latch-up due to ESD
- Designed to replace multilayer varistors (MLVs) in portable applications
- Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs
- The combination of small size and high ESD surge capability makes them ideal for use in portable applications
CIRCUIT BOARD LAYOUT RECOMMENDATIONS
- Good circuit board layout is critical for the suppression of ESD induced transients
- Place the ESD Protection Diode near the input terminals or connectors to restrict transient coupling
- Minimize the path length between the ESD Protection Diode and the protected line
- Minimize all conductive loops including power and ground loops
- The ESD transient return path to ground should be kept as short as possible
Document Number: DS_S1501014
Version: C15
TESDC5V0LC
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1501014
Version: C15
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