TS13003ACKC0G [TSC]
High Voltage NPN Transistor;
| 型号： | TS13003ACKC0G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | High Voltage NPN Transistor |
| 文件： | 总5页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS13003A
High Voltage NPN Transistor
TO-126
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Collector
3. Emitter
BVCEO
450V
BVCBO
700V
IC
2A
VCE(SAT)
0.5V @ IC=1A, IB=0.25A
Features
Block Diagram
●
High Voltage
●
High Speed Switching
Structure
●
Silicon Triple Diffused Type
NPN Silicon Transistor
●
Ordering Information
Part No.
Package
Packing
TS13003ACK B0G
TS13003ACK C0G
TO-126
TO-126
1kpcs / Bulk
50pcs / Tube
Note: “G” denote for Halogen free
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
700
Collector-Emitter Voltage
Emitter-Base Voltage
450
V
9
V
Collector Current
2
50
A
Total Power Dissipation @ TC=25oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
PTOT
TJ
W
oC
oC
+150
TSTG
- 55 to +150
Thermal Performance
Parameter
Symbol
Limit
Unit
RӨJC
2.5
oC/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
96.2
oC/W
1/5
Version: B14
TS13003A
High Voltage NPN Transistor
Electrical Specifications (TA=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
BVCES
BVCEO
BVEBO
ICBO
700
700
450
9
--
--
--
--
V
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
IC = 1mA, VBE = 0V
IC = 10mA, IE = 0
IE = 10mA, IC = 0
VCB = 700V, IE = 0
VCE = 450V, IC = 0
VEB = 9V, IC = 0
--
--
V
--
--
V
--
--
100
100
100
0.5
0.6
1.2
35
--
µA
µA
µA
V
ICEO
--
--
IEBO
--
--
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A
VCE = 5V, IC = 500mA
VCE = 5V, IC = 2A
VCE(SAT)
VCE(SAT)
VBE(SAT)
1
--
0.25
0.3
0.9
--
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
DC Current Gain*
2
V
V
hFE
hFE
1
2
15
5
--
Dynamic Characteristics
Frequency
VCE = 10V, IC = 0.1A
fT
5
--
--
--
MHz
pF
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
Resistive Load Switching Time (Ratings)
Storage Time
Fall Time
VCC = 125V, IC = 0.25A,
Duty Cycle ≤1%
tSTG
tf
2
--
--
5
1
µs
µs
--
* Note: pulse test: pulse width ≤300µs, duty cycle ≤2%
2/5
Version: B14
TS13003A
High Voltage NPN Transistor
Electrical Characteristics Curves (Ta = 25oC, unless otherwise noted)
Figure 1. Safe Operation Area
Figure 3. Vce(sat) vs. IC
Figure 5. Power Derating
Figure 2. DC Current Gain
Figure 4. Vbe(sat) vs. IC
3/5
Version: B14
TS13003A
High Voltage NPN Transistor
TO-126 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: B14
TS13003A
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: B14
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