TSD1858 [TSC]
Low Vcesat NPN Transistor; 低VCESAT NPN晶体管
| 型号： | TSD1858 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Low Vcesat NPN Transistor |
| 文件： | 总4页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSD1858
Low Vcesat NPN Transistor
TO-251
(IPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
180V
160V
1.5A
VCE(SAT)
0.3V @ IC = 1A, IB = 100mA
Features
Ordering Information
●
Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.)
High BVCEO
Part No.
Package
Packing
●
TSD1858CH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
Structure
●
Epitaxial Planar Type
NPN Silicon Transistor
●
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
180
160
V
5
1.5
V
DC
Collector Current
IC
A
Pulse
3 (note1)
1
Power Dissipation @ TA=25 oC
Power Dissipation @ TC=25 oC
PD
PD
W
W
15
oC/W
oC/W
oC
125
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Operating Junction Temperature
RӨ
JC
8.33
RӨ
JA
TJ
+150
- 55 to +150
Operating Junction and Storage Temperature Range
TSTG
oC
Note: 1. Single pulse, Pw≤380us, Duty≤2%
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Conditions
IC = 1mA, IE = 0
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
180
160
5
Typ
--
Max
--
Unit
V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
--
--
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 50uA, IC = 0
--
--
V
VCB = 160V, IE = 0
VEB = 4V, IC = 0
--
--
1
uA
uA
V
Emitter Cutoff Current
IEBO
--
--
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC= 1A, IB = 100mA
VCE = 5V, IC = 5mA
VCE = 5V, IC = 200mA
VCE = 5V, IC = 500mA
VCE =5V, IE=150mA,
f=100MHz
VCE(SAT)
VBE(ON)
--
0.15
--
0.3
0.8
390
--
--
V
hFE
hFE
1
2
180
30
--
DC Current Transfer Ratio
--
Transition Frequency
Output Capacitance
fT
--
--
200
13
--
--
MHz
pF
VCB = 10V, f=1MHz
Cob
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
1/4
Version: E11
TSD1858
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) vs. Collector Current
(VCE=5V, TA=25°C)
(IC/IB=10, TA=25°C)
Figure 4. Cib vs. VCE
Figure 3. VBE(SAT) vs. Collector Current
(f=1MHz, TA=25°C)
(IC/IB=10, TA=25°C)
Figure 6. Cob vs. VCB
Figure 5. Frequency vs. Emitter Current
(f=1MHz, TA=25°C)
(VCE=5V, TA=25°C)
2/4
Version: E11
TSD1858
Low Vcesat NPN Transistor
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
3/4
Version: E11
TSD1858
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: E11
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