TSD882S [TSC]

Low Vce(sat) NPN Transistor; 低的Vce ( sat)的NPN晶体管
TSD882S
型号: TSD882S
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Low Vce(sat) NPN Transistor
低的Vce ( sat)的NPN晶体管

晶体 晶体管
文件: 总3页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSD882S  
Low Vce(sat) NPN Transistor  
Pin assignment:  
TO-92  
1. Emitter  
2. Collector  
3. Base  
BVCEO = 50V  
Ic = 3A  
VCE (SAT), = 0.3V(typ.) @Ic / Ib = 2A / 20mA  
SOT-89  
1. Base  
2. Collector  
3. Emitter  
Features  
Ordering Information  
—
Low VCE (SAT).  
Part No.  
TSD882SCT  
TSD882SCY  
Packing  
Bulk Pack  
Package  
TO-92  
SOT-89  
—
Excellent DC current gain characteristics  
Structure  
—
Tape & Reel  
Epitaxial planar type.  
—
Complimentary to TSB772S  
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
50V  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
A
50V  
5
DC  
3
Pulse  
TO-92  
SOT-89  
7 (note 1)  
0.75  
Collector Power Dissipation  
PD  
W
0.50  
Operating Junction Temperature  
TJ  
+150  
- 55 to +150  
oC  
oC  
Operating Junction and Storage Temperature Range  
Note: 1. Single pulse, Pw = 350uS, Duty <= 2%  
TSTG  
Electrical Characteristics  
Ta = 25 oC unless otherwise noted  
Parameter  
Static  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Base Voltage  
IC = 50uA, IE = 0  
IC = 1mA, IB = 0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
50  
50  
5
--  
--  
--  
--  
--  
1
V
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 50uA, IC = 0  
VCB = 40V, IE = 0  
VEB = 4V, IC = 0  
--  
V
--  
--  
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
IC / IB = 2.0A / 0.2A  
VCE = 2V, IC = 1A  
VCE = 5V, IC = 100mA,  
f = 100MHz  
VCE(SAT)  
hFE  
--  
0.3  
--  
0.5  
500  
--  
160  
--  
fT  
90  
MHz  
pF  
Output Capacitance  
VCB = 10V, f=1MHz  
Cob  
45  
--  
Note : pulse test: pulse width <=380uS, duty cycle <=2%  
TSD882S  
1-3  
2003/12 rev. A  
Electrical Characteristics Curve  
TSD882S  
2-3  
2003/12 rev. A  
SOT-89 Mechanical Drawing  
A
B
SOT-89 DIMENSION  
MILLIMETERS  
INCHES  
MIN  
I
DIM  
MIN  
4.40  
1.50  
2.30  
0.40  
1.50  
3.00  
0.89  
4.05  
1.4  
MAX  
4.60  
1.7  
MAX  
0.181  
0.070  
0.102  
0.020  
0.059  
0.118  
0.047  
0.167  
0.068  
0.017  
A
B
C
D
E
F
G
H
I
0.173  
0.059  
0.090  
0.016  
0.059  
0.118  
0.035  
0.159  
0.055  
0.014  
2.60  
0.52  
1.50  
3.00  
1.20  
4.25  
1.6  
C
H
G
E
D
J
J
0.35  
0.44  
F
TO-92 Mechanical Drawing  
A
TO-92 DIMENSION  
MILLIMETERS  
INCHES  
DIM  
MIN  
4.30  
4.30  
MAX  
4.70  
4.70  
MIN  
MAX  
0.185  
0.185  
B
A
B
C
D
E
F
0.169  
0.169  
14.30(typ)  
0.563(typ)  
0.43  
2.19  
3.30  
2.42  
0.37  
0.49  
2.81  
3.70  
2.66  
0.43  
0.017  
0.086  
0.130  
0.095  
0.015  
0.019  
0.111  
0.146  
0.105  
0.017  
G
H
E
F
C
H
G
D
TSD882S  
3-3  
2003/12 rev. A  

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