TSM040N03CPROG [TSC]
30V N-Channel Power MOSFET;
| 型号： | TSM040N03CPROG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V N-Channel Power MOSFET |
| 文件： | 总5页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM040N03CP
30V N-Channel Power MOSFET
TO-252
(DPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
Parameter
Value
Unit
3. Source
VDS
30
4
V
VGS = 10V
VGS = 4.5V
RDS(on) (max)
Qg
mΩ
6
24
nC
Block Diagram
Ordering Information
Part No.
Package
TO-252
Packing
TSM040N03CP ROG
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Parameter
Symbol
VDS
Limit
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
90
V
TC=25ºC
A
Continuous Drain Current
ID
57
TC=100ºC
A
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
Single Pulse Avalanche Current (Note 2)
IDM
EAS
IAS
360
125
A
mJ
A
50
@ TC=25oC
Derate above TC=25oC
88
W
Total Power Dissipation
PD
0.59
W/ºC
ºC
oC
Operating Junction Temperature
Storage Temperature Range
TJ
150
TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
RӨJC
Limit
1.7
Unit
oC/W
oC/W
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨJA
62
1/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 24A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
BVDSS
30
--
--
--
4
6
V
mΩ
V
3.1
4.5
Drain-Source On-State Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
--
1.2
--
1.6
--
2.5
1
VDS = 30V, VGS = 0V
VDS = 24V, TJ = 125ºC
VGS = ±20V, VDS = 0V
VDS = 10V, ID = 10A
Zero Gate Voltage Drain Current
IDSS
µA
--
--
10
Gate Body Leakage
IGSS
gfs
--
--
±100
--
nA
S
Forward Transconductance
--
15.5
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge (Note 3,4)
Gate-Drain Charge (Note 3,4)
Input Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
--
--
--
--
--
24
4.2
13
--
--
--
--
--
--
--
VDS = 15V, ID = 24A,
VGS = 4.5V
nC
2200
280
177
2
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, VDS=0V, f=1MHz
Ω
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time (Note 3,4)
Turn-Off Delay Time (Note 3,4)
Turn-Off Fall Time (Note 3,4)
td(on)
tr
td(off)
tf
--
--
--
--
12.6
19.5
42.8
13.2
--
--
--
--
VDD=15V , VGS=10V ,
RG=3.3, ID=-15A
ns
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
VG=VD=0V
IS
--
--
--
--
--
--
90
360
1
A
A
V
Force Current
Pulse Drain-Source Diode
ISM
VSD
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V, VGS=10V, L=0.1mH, IAS=50A, RG=25, Starting TJ=25oC
3. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%
4. Essentially independent of operating temperature.
2/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
Electrical Characteristics Curves
Continuous Drain Current vs. Tc
Normalized RDSON vs. TJ
TJ , Junction Temperature (oC)
TC , Case Temperature (oC)
Normalized Vth vs. TJ
Gate Charge Waveform
TJ , Junction Temperature (oC)
Qg , Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
Square Wave Pulse Duration
(s)
VDS , Drain to Source Voltage
(V)
3/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
4/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A14
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