TSM2311CX [TSC]
20V P-Channel Enhancement Mode MOSFET; 20V P沟道增强型MOSFET
| 型号： | TSM2311CX |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20V P-Channel Enhancement Mode MOSFET |
| 文件： | 总3页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM2311
20V P-Channel Enhancement Mode MOSFET
Pin assignment:
VDS = - 20V
1. Gate
RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ
2. Source
3. Drain
RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ
Features
ꢀ
ꢀ
Advanced trench process technology
ꢀ
ꢀ
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
High density cell design for ultra low on-resistance
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM2311CX
Tape & Reel
SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
- 20V
± 8
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
VDS
VGS
ID
V
- 4
A
IDM
PD
- 20
A
Ta = 25 oC
Ta = 75 oC
1.25
W
0.8
Operating Junction Temperature
TJ
+150
- 55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
TL
Limit
5
Unit
S
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Rθja
100
oC/W
TSM2311
1-1
2003/12 rev. B
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA
BVDSS
- 20
--
--
--
V
Drain-Source On-State
Resistance
VGS = - 4.5V, ID = -4.0A
RDS(ON)
45
55
mΩ
Drain-Source On-State
Resistance
VGS = - 2.5V, ID = -2.5A
RDS(ON)
--
75
85
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Dynamic
VDS = VGS, ID = - 250uA
VDS = - 16V, VGS = 0V
VGS = ± 8V, VDS = 0V
VDS ≧- 10V, VGS = -4.5V
VDS = - 5V, ID = - 4.0A
VGS(TH)
IDSS
- 0.45
--
--
--
--
--
9
--
- 1.0
± 100
--
V
uA
nA
A
IGSS
--
ID(ON)
gfs
- 6
--
--
S
Total Gate Charge
VDS = - 6V, ID = - 4.0A,
VGS = - 4.5V
Qg
Qgs
Qgd
td(on)
tr
--
--
--
--
--
--
--
--
--
--
8.5
1.5
2.1
18
12
--
--
--
--
--
--
--
--
--
nC
nS
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = - 4V, RL = 4Ω,
ID = - 1A, VGEN = - 4.5V,
RG = 6Ω
45
td(off)
tf
95
65
Input Capacitance
VDS = - 6V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
Crss
970
485
160
pF
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
--
--
--
- 1.6
- 1.2
A
V
IS = - 1.6A, VGS = 0V
VSD
- 0.8
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM2311
2-2
2003/12 rev. B
SOT-23 Mechanical Drawing
A
B
F
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
2.88
0.39
1.78
0.51
1.59
1.04
0.07
MAX
2.91
0.42
2.03
0.61
1.66
1.08
0.09
MAX
0.115
0.017
0.080
0.024
0.065
0.043
0.004
A
B
C
D
E
F
0.113
0.015
0.070
0.020
0.063
0.041
0.003
E
G
G
D
C
TSM2311
3-3
2003/12 rev. B
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