TSM3400 [TSC]
30V N-Channel Enhancement Mode MOSFET; 30V N沟道增强型MOSFET
| 型号： | TSM3400 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V N-Channel Enhancement Mode MOSFET |
| 文件： | 总5页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM3400
30V N-Channel Enhancement Mode MOSFET
Pin assignment:
VDS = 30V
1. Gate
RDS (on), Vgs @ 4.5V, Ids @ 2A =70mΩ
2. Source
RDS (on), Vgs @ 10V, Ids @ 3.5A =50mΩ
3. Drain
Features
Rugged and reliable
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM3400CX
Tape & Reel
SOT-23
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
30V
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
VDS
VGS
ID
± 20
V
3.5
A
IDM
13
A
Ta = 25 oC
Ta = 75 oC
1.25
W
PD
0.8
Operating Junction Temperature
TJ
+150
- 55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
TL
Limit
5
Unit
S
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Rθja
100
oC/W
TSM3400
1-5
2005/05 rev. A
Electrical Characteristics
Ta = 25 oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = - 250uA
VGS = 10V, ID = 3.5A
VGS = 4.5V, ID = 2A
VDS = VGS, ID = - 250uA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS =5V, VGS = 10V
VDS = 5V, ID = 3.5A
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
30
--
--
40
55
1.7
--
--
50
V
mΩ
--
70
1
2.5
1.0
±100
--
V
uA
nA
A
--
IGSS
--
--
On-State Drain Current
Forward Transconductance
Dynamic
ID(ON)
gfs
10
--
--
6
--
S
Total Gate Charge
Qg
--
6.8
--
V
DS =10V, ID = 3.5A, VGS = 4.5V
nC
nS
Gate-Source Charge
Qgs
Qgd
td(on)
tr
--
--
--
--
--
--
--
--
--
3.1
1.95
14.2
4.8
--
--
--
--
--
--
--
--
--
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 10V, RG = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
19.6
9.3
Input Capacitance
Ciss
Coss
Crss
600
125
95
VDS = 10V, VGS = 0V,
pF
V
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
f = 1.0MHz
IS = - 1.6A, VGS = 0V
VSD
--
- 0.8
- 1.2
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM3400
2-5
2005/05 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM3400
3-5
2005/05 rev. A
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM3400
4-5
2005/05 rev. A
SOT-23 Mechanical Drawing
A
B
F
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
2.88
0.39
1.78
0.51
1.59
1.04
0.07
MAX
2.91
0.42
2.03
0.61
1.66
1.08
0.09
MAX
0.115
0.017
0.080
0.024
0.065
0.043
0.004
A
B
C
D
E
F
0.113
0.015
0.070
0.020
0.063
0.041
0.003
E
G
G
D
C
TSM3400
5-5
2005/05 rev. A
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