TSM4806 [TSC]
20V N-Channel MOSFET;
| 型号： | TSM4806 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4806
20V N-Channel MOSFET
Key Parameter Performance
SOP-8
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
8. Drain
Parameter
Value
20
Unit
7. Drain
6. Drain
5. Drain
VDS
V
VGS = 4.5V
20
VGS = 2.5V
VGS = 1.8V
25
31
mΩ
RDS(on) (max)
Qg
12.3
nC
Features
Block Diagram
●
●
Advanced High Cell Density Trench Technology.
Low Gate Charge.
Application
●
●
Networking DC-DC Power System.
Load Switch.
Ordering Information
Part No.
Package
Packing
TSM4806CS RLG
SOP-8
2.5kpcs / 13” Reel
Note: “G” denotes Halogen Free Product.
N-Channel MOSFET
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
VDS
VGS
ID
Limit
20
Unit
V
Drain-Source Voltage
±8
Gate-Source Voltage
V
Continuous Drain Current a
Pulsed Drain Current b
A
28
70
IDM
A
Continuous Source Current (Diode Conduction)a,c
IS
28
A
Total Power Dissipation
TA=25oC
PD
2
W
oC
oC
-55 to +150
-55 to +150
Storage Temperature Range
Operating Junction Temperature Range
TSTG
TJ
Thermal Performance
Parameter
Symbol
RӨJL
Limit
40
Unit
oC/W
oC/W
Thermal Resistance Junction to Lead
Thermal Resistance Junction to Ambient
Notes:
RӨJA
62.5
a. The data tested by surface mounted on a 1 inch2 FR-4 board with 2oz copper.
b. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% surface mounted on FR4 Board, t ≤ 5s.
c. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
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Version: A14
TSM4806
20V N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±8V, VDS = 0V
VDS = 16V, VGS = 0V
VGS = 4.5V, ID = 20A
VGS = 2.5V, ID = 15A
VGS = 1.8V, ID = 10A
VDS = 5V, ID = 15A
IS = 1A, VGS = 0V
BVDSS
VGS(TH)
IGSS
20
0.3
--
--
0.6
--
--
1.0
±100
1
V
V
nA
µA
IDSS
--
--
--
16
20
25
27
--
20
Drain-Source On-State Resistance
RDS(ON)
--
25
mΩ
31
Forward Transconductance
Diode Forward Voltage
Dynamicb
gfs
--
--
--
S
V
VSD
1.2
Gate Resistance
VDS =0V, VGS =0V, f=1MHz
Rg
Qg
--
--
--
--
--
--
--
--
--
1.4
12.3
1.95
3.08
961
92.3
80.4
6
2.8
--
Ω
Total Gate Charge
VDS = 15V, ID = 15A,
VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qgs
Qgd
Ciss
Coss
Crss
trr
--
nC
--
--
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery Time
Reverse Recovery Charge
Switchingb,c
--
pF
--
--
ns
IF= 15A, dI/dt= 100A/µs,
TJ=25oC
Qrr
1.38
--
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
3.02
13.1
28
--
--
--
--
VDD = 10V, ID = 15A,
ns
VGS = 4.5V, RG = 3.3Ω
Turn-Off Fall Time
8.3
Notes:
a. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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Version: A14
TSM4806
20V N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Output Characteristics
Source-Drain Diode Forward Voltage
Normalized VGS(th) vs. TJ
On-Resistance vs. Gate-Source Voltage
Gate Charge
Normalized RDSON vs. TJ
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Version: A14
TSM4806
20V N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Capacitance
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Version: A14
TSM4806
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
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Version: A14
TSM4806
20V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: A14
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