TSM4944DCSRLG [TSC]

30V Dual N-Channel MOSFET;
TSM4944DCSRLG
型号: TSM4944DCSRLG
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

30V Dual N-Channel MOSFET

文件: 总4页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSM4944D  
30V Dual N-Channel MOSFET  
SOP-8  
Pin Definition:  
1. Source 1  
2. Gate 1  
3. Source 2  
4. Gate 2  
PRODUCT SUMMARY  
8. Drain 1  
7. Drain 1  
6. Drain 2  
5. Drain 2  
VDS (V)  
RDS(on)(m)  
13.2 @ VGS = 10V  
25 @ VGS = 4.5V  
ID (A)  
12.2  
9.4  
30  
Block Diagram  
Features  
Advance Trench Process Technology  
High Density Cell Design for Ultra Low On-resistance  
Application  
Load Switch  
Dc-DC Conversion  
Ordering Information  
Part No.  
Package  
Packing  
TSM4944DCS RLG  
SOP-8  
2.5Kpcs / 13” Reel  
Dual N-Channel MOSFET  
Note: “G” denote for Halogen Free Product  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
VDS  
VGS  
ID  
V
V
A
A
A
±20  
12.2  
30  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current (Diode Conduction) (Note)  
1.9  
2.3  
TA = 25oC  
Maximum Power Dissipation  
TA = 75oC  
PD  
W
1.2  
oC  
oC  
+150  
Operating Junction Temperature  
TJ  
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Performance  
Parameter  
Symbol  
Limit  
1.8  
Unit  
oC/W  
oC/W  
Junction to Case Thermal Resistance  
RӨ  
JC  
Junction to Ambient Thermal Resistance (PCB mounted)  
RӨ  
40  
JA  
Notes 1: Maximum DC current limited by the package  
Notes 2: Surface Mounted on 1” x 1” FR4 Board, t 10 sec.  
1/4  
Version: A13  
TSM4944D  
30V Dual N-Channel MOSFET  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Static  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
VGS = 0V, ID = 250uA  
VDS = VGS, ID = 250uA  
VGS = ±20V, VDS = 0V  
VDS = 30V, VGS = 0V  
BVDSS  
VGS(TH)  
IGSS  
30  
1.0  
--  
--  
1.8  
--  
--  
3.0  
±100  
1.0  
--  
V
V
Gate Body Leakage  
nA  
uA  
A
Zero Gate Voltage Drain Current  
On-State Drain Current  
IDSS  
--  
--  
VDS  
5V, VGS = 10V  
ID(ON)  
30  
--  
--  
VGS = 10V, ID = 12.2A  
VGS = 4.5V, ID = 9.4A  
VDS = 15V, ID = 15A  
IS = 1.9A, VGS = 0V  
11  
19  
32  
0.85  
13.2  
25  
Drain-Source On-State Resistance  
RDS(ON)  
mΩ  
--  
Forward Transconductance  
Diode Forward Voltage  
Dynamicb  
gfs  
--  
--  
S
V
VSD  
--  
1.3  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Switchingc  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
26  
6
--  
--  
--  
--  
--  
--  
VDS = 15V, ID = 12.2A,  
VGS = 10V  
nC  
pF  
5
2134  
343  
134  
VDS = 15V, VGS = 0V,  
f = 1.0MHz  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
--  
--  
--  
--  
17  
3.5  
40  
6
VDD = 15V, RL = 15,  
ID = 1A, VGEN = 10V,  
RG = 6Ω  
nS  
Turn-Off Fall Time  
Notes:  
a. pulse test: PW  
b. For DESIGN AID ONLY, not subject to production testing.  
b. Switching time is essentially independent of operating temperature.  
300µS, duty cycle  
2%  
2/4  
Version: A13  
TSM4944D  
30V Dual N-Channel MOSFET  
SOP-8 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
Y
= Year Code  
M = Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
3/4  
Version: A13  
TSM4944D  
30V Dual N-Channel MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
4/4  
Version: A13  

相关型号:

TSM4944D_13

30V Dual N-Channel MOSFET
TSC

TSM4946D

60V Dual N-Channel MOSFET
TSC

TSM4946DCSRL

60V Dual N-Channel MOSFET
TSC

TSM4946DCSRLG

60V Dual N-Channel MOSFET
TSC

TSM4953D

30V Dual P-Channel MOSFET
TSC

TSM4953DCSRF

30V Dual P-Channel MOSFET
TSC

TSM4953DCSRL

30V Dual P-Channel MOSFET
TSC

TSM4953DCSRLG

30V Dual P-Channel MOSFET
TSC

TSM4953D_10

30V Dual P-Channel MOSFET
TSC

TSM4953D_12

30V Dual P-Channel MOSFET
TSC

TSM4N60

600V N-Channel Power MOSFET
TSC

TSM4N60CHC5

600V N-Channel Power MOSFET
TSC