TSM55N03CP [TSC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | TSM55N03CP |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总3页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM55N03
Preliminary
N-Channel Enhancement Mode MOSFET
VDS = 25V
Pin assignment:
1. Gate
ID = 55A
2. Drain
RDS (on), Vgs @ 10V, Ids @ 30A = 6mΩ
3. Source
RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ
Features
Advanced trench process technology
Fully Characterized Avalanche Voltage and Current
High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor
Improved Shoot-Through FOM
Drivers
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM55N03CP
Tape & Reel
TO-252
Absolute Maximum Rating (TA = 25 oC unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
25
±20
V
V
VGS
ID
55
A
IDM
350
TA = 25 oC
TA = 75 oC
70
W
W/oC
oC
Maximum Power Dissipation
PD
42
Operating Junction Temperature
TJ
+150
- 55 to +150
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
TJ, TSTG
oC
EAS
300
mJ
Thermal Performance
Parameter
Symbol
TL
Limit
10
Unit
Lead Temperature (1/8” from case)
Junction-to-case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
S
Rθjc
1.8
oC/W
Rθja
40
Note: 1. Maximum DC current limited by the package
2. 1-in2 2oz Cu PCB board
TSM55N03
1-3
2005/04 rev. B
Electrical Characteristics
TJ = 25 oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 30A
VGS = 10V, ID = 30A
VDS = VGS, ID = 250uA
VDS = 25V, VGS = 0V
VGS = ± 20V, VDS = 0V
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
30
--
--
7.5
4.5
1.6
--
--
9.0
6.0
3.0
1.0
± 100
--
V
mΩ
mΩ
V
--
1.0
--
uA
nA
IGSS
--
--
Gate Resisrance
Rg
--
--
Forward Transconductance
Dynamic
VDS =15V, ID = 15A
gfs
--
--
--
S
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
--
--
--
--
--
--
--
--
--
--
26
6.0
5.0
17
--
--
--
--
--
--
--
--
--
--
V
DS = 15V, ID = 25A,
GS = 10V
nC
Gate-Source Charge
Gate-Drain Charge
V
Turn-On Delay Time
VDD = 15V, RL = 15Ω,
Turn-On Rise Time
3.5
40
ID = 1A, VGEN = 10V,
nS
pF
Turn-Off Delay Time
td(off)
tf
RG = 6Ω
Turn-Off Fall Time
6.0
2134
343
134
Input Capacitance
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
--
--
--
20
A
V
IS = 20A, VGS = 0V
VSD
0.85
1.3
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
TSM55N03
2-3
2005/04 rev. B
TO-252 Mechanical Drawing
E
J
TO-252 DIMENSION
MILLIMETERS
A
F
INCHES
MIN
DIM
MIN
MAX
6.840
10.400
0.700
2.670
2.390
0.570
1.580
0.570
5.550
1.640
MAX
0.269
0.409
0.028
0.105
0.094
0.022
0.062
0.022
0.219
0.065
A
B
C
D
E
F
G
H
I
6.570
9.250
0.550
2.560
2.300
0.490
1.460
0.520
5.340
1.460
0.259
0.364
0.022
0.101
0.090
0.019
0.057
0.020
0.210
0.057
I
B
G
C
D
H
J
TSM55N03
3-3
2005/04 rev. B
相关型号：
©2020 ICPDF网 联系我们和版权申明