TSM9435CS [TSC]
30V P-Channel Enhancement-Mode MOSFET; 30V P沟道增强型MOSFET
| 型号： | TSM9435CS |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V P-Channel Enhancement-Mode MOSFET |
| 文件： | 总3页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM9435
-30V P-Channel Enhancement-Mode MOSFET
Pin assignment:
1. Source
2. Source
VDS = -30V
RDS (on), Vgs @ -10V, Ids @ -5.3A =60mΩ
3. Source
RDS (on), Vgs @ -4.5V, Ids @ -4.2A =90mΩ
4. Gate
5, 6, 7, 8. Drain
Features
Block Diagram
Advanced trench process technology
P-Channel MOSFET
High density cell design for ultra low on-resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Ordering Information
Part No.
Packing
Package
Tape & Reel
TSM9435CS
SOP-8
2,500/per reel
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
-30V
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,
Pulsed Drain Current,
Maximum Power Dissipation
VDS
VGS
ID
±20
V
-5.3
A
IDM
PD
-20
A
Ta = 25 oC
Ta = 70 oC
2.5
W
1.3
Operating Junction Temperature
TJ
+150
- 55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
Rθjf
Limit
30
Unit
oC/W
oC/W
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Rθja
50
TSM9435
1-3
2005/06 rev. C
Electrical Characteristics
(Ta = 25 oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
VGS = 0V, ID = 250uA
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -4.2A
VDS = VGS, ID = 250uA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = -15V, ID = -5.3A
BVDSS
RDS(ON)
RDS(ON)
VGS(TH)
IDSS
-30
--
--
50
70
-1.7
--
--
60
V
mΩ
--
90
-1.0
--
-3.0
-1.0
±100
--
V
uA
nA
S
IGSS
--
--
Forward Transconductance
Dynamic
gfs
4
7
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
--
--
--
--
--
--
--
--
--
--
9.52
3.43
--
--
--
--
--
--
--
--
--
--
VDS = -15V, ID = -5.3A,
VGS = -10V
nC
nS
pF
Gate-Source Charge
Gate-Drain Charge
1.71
Turn-On Delay Time
10.8
VDD = -15V, RL = 15Ω,
ID = -1A, VGEN = -10V,
RG = 6Ω
Turn-On Rise Time
2.33
Turn-Off Delay Time
td(off)
tf
22.53
3.87
Turn-Off Fall Time
Input Capacitance
Ciss
Coss
Crss
551.57
90.96
60.79
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
--
--
--
--
-1.9
-1.3
A
V
IS = -5.3A, VGS = 0V
VSD
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM9435
2-3
2005/06 rev. C
SOP-8 Mechanical Drawing
A
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
4.80
3.80
1.35
0.35
0.40
MAX
5.00
4.00
1.75
0.49
1.25
MAX
0.196
0.157
0.068
0.019
0.049
9
8
16
1
A
B
C
D
F
0.189
0.150
0.054
0.014
0.016
B
P
G
K
M
P
R
1.27 (typ)
0.05 (typ)
G
0.10
0o
0.25
7o
0.004
0o
0.009
7o
R
M
C
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
F
D
K
TSM9435
3-3
2005/06 rev. C
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