TSS54L [TSC]
0.2Amp Surface Mount Schottky Barrier; 0.2Amp表面贴装肖特基
| 型号： | TSS54L |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 0.2Amp Surface Mount Schottky Barrier |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSS54L
0.2Amp Surface Mount Schottky Barrier
Diode
Pb
RoHS
COMPLIANCE
1005
Features
Designed for mounting on small surface
Extremely thin/leadless package
Low capacitance
Low forward voltage drop
High temperature soldering:
260oC/10 seconds at terminals
Chip version in 1005
ITEM
L
1005
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
0.020(0.50)
Typical
Mechanical Data
W
T
Case: 1005 Standard package, molded plastic
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
C
D
Polarity: Indicated by cathode band
Mounting position: Any
Package code: RW
0.040(1.00)
Typical
Weight: 0.006 gram (approximately)
Dimensions in inches and (millimeters)
Maximum Ratings T =25 oC unless otherwise specified
A
Type Number
Symbol
1005
Units
Repetitive Peak Reverse Voltage
30
VRRM
V
Reverse Voltage
30
21
VR
VR(RMS)
IO
V
V
mA
A
RMS Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
200
0.3
IFRM
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
600
200
IFSM
Pd
mA
Power Dissipation
mW
Forward Voltage
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
0.24
0.32
0.4
0.5
1.0
VF
V
Reverse Leakage Current VR=25V
2
IR
uA
pF
Typical capacitance between terminals
VR=1V, f =1.0MHz reverse voltage
Reverse Recovery Time
(IF=IR=10mA, Irr=0.1x IR, RL=100Ώ)
Junction Temperature
10
CJ
5
Trr
nS
TJ
TSTG
oC
-65 to + 125
-65 to + 125
oC
Storage Temperature
Version: A07
RATINGS AND CHARACTERISTIC CURVES(TSS54L)
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T A = 2 5 C
1 0
8
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6 0
4 0
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0
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4
2
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5
1
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2
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3
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Version: A07
相关型号：
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