BSR202N [TYSEMI]
OptiMOS2 Small-Signal-Transistor Enhancement mode; OptiMOS2小信号三极管增强模式
| 型号： | BSR202N |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | OptiMOS2 Small-Signal-Transistor Enhancement mode |
| 文件： | 总3页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BSR202N
OptiMOS®2 Small-Signal-Transistor
Features
Product Summary
VDS
20
21
33
3.8
V
• N-channel
RDS(on),max
VGS=4.5 V
VGS=2.5 V
mΩ
• Enhancement mode
• Super Logic level (2.5V rated)
ID
A
• Avalanche rated
• Footprint compatible to SOT23
• dv /dt rated
PG-SC-59
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
1
2
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSR202N
PG-SC-59
L6327 = 3000 pcs. / reel
LAs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
3.8
3.1
15.2
30
A
I D,pulse
E AS
Pulsed drain current
I D=3.8 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=3.8 A, V DS=16 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=150 °C
V GS
Gate source voltage
±12
0.5
V
P tot
T A=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
ESD Class
-55 ... 150
0 (0V to 250V)
260 °C
JESD22-A114-HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
55/150/56
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Product specification
BSR202N
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D= 250 µA
V GS(th) V DS=VGS , I D=30 µA
Drain-source breakdown voltage
Gate threshold voltage
20
0.7
-
-
0.95
-
-
1.2
1
V
V DS=20 V, V GS=0 V,
I DSS
Drain-source leakage current
μA
T j=25 °C
V
DS=20 V, V GS=0 V,
-
-
100
T j=150 °C
I GSS
V GS=12 V, V DS=0 V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) V GS=2.5 V, I D=3 A
GS=4.5 V, I D=3.8 A
Drain-source on-state resistance
25
17
33
21
mΩ
V
|V DS|>2|I D|R DS(on)max
I D=3.8 A
,
g fs
Transconductance
17
-
S
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Product specification
BSR202N
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
863
278
40
1147 pF
370
V GS=0 V, V DS=10 V,
f =1 MHz
C oss
Crss
t d(on)
t r
60
8.8
16.7
19
-
-
-
-
ns
V
DD=10 V, V GS=4.5 V,
I D=3.8 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
3.7
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
1.66
1.1
5.8
1.9
2.21 nC
1.6
Q gd
V DD=10 V, I D=3.8 A,
V
GS=0 to 4.5 V
Q g
8.8
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.8
T A=25 °C
I S,pulse
15.2
V GS=0 V, I F=3.8 A,
T j=25 °C
V SD
Diode forward voltage
-
0.8
1.1
-
V
t rr
Reverse recovery time
-
-
14.3
7.6
ns
V R=10 V, I F=3.8 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
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