DMG3420U-7 [TYSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance; N沟道增强型MOSFET的低导通电阻
| 型号： | DMG3420U-7 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance |
| 文件： | 总2页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMG3420U
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
Low On-Resistance
I
D max
Low Input Capacitance
V(BR)DSS
RDS(ON) max
TA = +25°C
Fast Switching Speed
21mΩ @ VGS = 10V
25mΩ @ VGS = 4.5V
6.5A
Low Input/Output Leakage
20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
5.2A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
Mechanical Data
)
•
•
Case: SOT23
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
•
•
Applications
e3
Solderable per MIL-STD-202, Method 208
•
•
General Purpose Interfacing Switch
Power Management Functions
•
•
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Equivalent Circuit
TOP VIEW
TOP VIEW
Ordering Information (Note 4)
Part Number
DMG3420U-7
DMG3420UQ-7
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
G31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
G31
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Product specification
DMG3420U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±12
VGSS
TA = 25°C
TA = 85°C
Steady
State
5.47
3.43
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
A
A
ID
20
IDM
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.74
Unit
W
Power Dissipation (Note 5)
167
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1.0
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
µA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
—
0.95
21
1.2
29
35
48
91
—
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
25
Static Drain-Source On-Resistance
mꢀ
RDS(ON)
34
V
V
GS = 2.5V, ID = 4A
GS = 1.8V, ID = 2A
65
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
9
S
V
|Yfs|
VSD
VDS = 5V, ID = 3.8A
VGS = 0V, IS = 1A
0.75
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
434.7
69.1
61.2
1.53
5.4
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
Gate-Source Charge
Gate-Drain Charge
0.9
Qgs
Qgd
tD(on)
tr
I
D = 6A
1.5
Turn-On Delay Time
6.5
Turn-On Rise Time
8.3
VDD = 10V, VGS = 5V,
RL = 1.7ꢀ, RG = 6ꢀ
Turn-Off Delay Time
21.6
5.3
tD(off)
tf
Turn-Off Fall Time
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
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相关型号：
DMG4406LSS
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DIODES
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